My Inquiry
My Account
Vishay General Semiconductor - Diodes Division TPSMB12AHE3/52T
;;2.jpg)
- Part No.:
- TPSMB12AHE3/52T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
TPSMB12AHE3/52T.pdf
- Description:
- TVS DIODE 10.2VWM 16.7VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:3,038
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TPSMB12AHE3/52T from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features 12 V nominal breakdown voltage (VBR = 11.4–12.6 V at 1 mA), 10.2 V stand-off voltage (VWM), 16.7 V maximum clamping voltage at 35.9 A peak pulse current, 600 W peak pulse power (10/1000 µs), and 185 °C maximum junction temperature - deployed in automotive sensor protection and industrial power rail surge suppression.
For engineers reviewing the TPSMB12AHE3/52T datasheet, TPSMB12AHE3/52T pinout, TPSMB12AHE3/52T application, or TPSMB12AHE3/52T equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, TJ = 185 °C capability, low clamping ratio (VC/VWM ≈ 1.64), and SMB package compatibility with high-reliability PCB layouts requiring MSL Level 1 reflow.
Technical Context
The TPSMB12AHE3/52T employs passivated anisotropic rectifier technology to deliver stable clamping under repetitive surge conditions. Its junction passivation enables operation up to 185 °C and supports AEC-Q101 qualification for automotive use.
It is rated for 600 W peak pulse power (10/1000 µs waveform, 0.01% duty cycle), exhibits fast response time (<1 ns), and maintains low incremental surge resistance - critical for protecting downstream MOSFETs and ICs from inductive switching spikes and ESD events in DC power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 11.4 / 12.0 / 12.6 V at 1 mA - defines precise voltage threshold where avalanche conduction begins |
| VWM | 10.2 V - maximum continuous reverse working voltage before leakage exceeds 2 µA |
| VC @ IPPM | 16.7 V at 35.9 A - clamped voltage during worst-case 600 W transient, limiting stress on protected circuitry |
| PPPM | 600 W (10/1000 µs) - surge energy handling capacity compatible with IEC 61000-4-5 Level 3/4 requirements |
| TJ max. | +185 °C - enables placement near hot components (e.g., power converters) without derating |
| Polarity | Unidirectional - cathode-banded configuration protects against positive-going transients only |
| Package | SMB (DO-214AA) - industry-standard SMD outline with 0.205" × 0.220" footprint and MSL Level 1 rating |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, RoHS-compliant and AEC-Q101 qualified (HE3 suffix). Cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Anode of internal avalanche diode structure | Connected to protected line; conducts during overvoltage to shunt current to ground |
| Anode | Cathode of internal avalanche diode structure | Typically tied to system ground or low-impedance return path for effective clamping |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance per JESD47 |
| 185 °C junction rating | Enables direct placement adjacent to power MOSFETs or DC-DC converters without thermal derating |
| Low clamping ratio (VC/VWM = 1.64) | Minimizes overvoltage overshoot during surge, reducing risk of latch-up or gate oxide damage in protected ICs |
| MSL Level 1 moisture sensitivity | Allows unlimited floor life and standard reflow profile (peak 260 °C) without baking preconditioning |
| 600 W peak pulse power | Withstands repeated 10/1000 µs surges up to 35.9 A - sufficient for ISO 7637-2 Pulse 1/2a/5a compliance |
Applications
| Automotive Sensor Protection | Industrial Power Rail Clamping |
|---|---|
Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor front-ends (e.g., pressure, temperature) from load-dump and inductive kickback in 12 V vehicle systems. IC Role / Device Role / Timing Role: Unidirectional TVS placed between signal line and chassis ground to clamp positive transients before they reach sensitive input pins. Use Value: Prevents permanent damage to sensor ASICs and communication ICs while maintaining signal integrity under ISO 16750-2 load-dump conditions. | Use Scenario: Safeguarding 12 V/24 V DC input rails of PLC modules, motor drives, and programmable logic controllers against switching surges and lightning-induced transients. IC Role / Device Role / Timing Role: Primary overvoltage clamp on main supply input, coordinated with upstream fuses and downstream LDOs to define robust fault boundary. Use Value: Limits rail collapse and prevents brownout resets during 600 W transients, ensuring uninterrupted operation in harsh factory environments. |
| Consumer Power Adapter Input | Telecom DC Feeding Protection |
Use Scenario: Secondary-side surge suppression in AC/DC adapters and USB-C PD power bricks exposed to mains-borne transients and hot-plug events. IC Role / Device Role / Timing Role: Final-stage TVS on regulated 5 V/9 V/12 V output rails to protect connected devices from adapter-level faults. Use Value: Meets UL 62368-1 transient immunity requirements while avoiding false triggering during normal ripple or startup overshoot. | Use Scenario: Protecting PoE-powered equipment (e.g., IP cameras, wireless APs) from voltage surges induced on 48 V DC feeding lines during cable coupling or lightning proximity. IC Role / Device Role / Timing Role: Bidirectional-capable design not applicable; TPSMB12AHE3/52T used in unidirectional configurations on return path or auxiliary bias rails. Use Value: Provides cost-effective clamping margin for 48 V systems when paired with higher-VBR TVS on live line, meeting IEEE 802.3bt surge test profiles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ12A | Same VBR range (11.4–12.6 V), but 400 W PPPM, lower IPPM (24.7 A), SMA package (smaller thermal mass) | Limited to lower-energy transients; unsuitable for ISO 7637-2 Pulse 5a or sustained load-dump events | Select when board space is constrained and surge energy is ≤400 W |
| SMCJ12A | Same VBR, 1500 W PPPM, 109 A IPPM, larger SMC (DO-214AB) package | Higher thermal inertia and surge margin; requires larger PCB pad area and layout revision | Select when system-level testing demands >600 W immunity or extended surge repetition |
Compared with SMAJ12A and SMCJ12A, the TPSMB12AHE3/52T delivers optimal balance of 600 W surge capacity, AEC-Q101 qualification, and SMB footprint - making it preferred for space-constrained automotive and industrial designs requiring validated reliability without over-engineering.
Availability
TPSMB12AHE3/52T is available at Aetrix Electronics and suitable for automotive sensor modules, industrial PLC power inputs, and telecom DC feeding circuits requiring stable component supply, long-term lifecycle support, and traceable AEC-Q101 qualified parts.
Supply support for TPSMB12AHE3/52T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS, MOSFETs, and optoelectronics with emphasis on high-reliability, high-temperature, and automotive-qualified solutions.
The TPSMB series was engineered specifically for surface-mount transient suppression in demanding environments - targeting automotive ECUs, industrial controls, and consumer power systems where AEC-Q101 compliance and 185 °C operation are mandatory.
FAQ
What is the exact breakdown voltage tolerance for TPSMB12AHE3/52T?
The TPSMB12AHE3/52T has a guaranteed breakdown voltage range of 11.4 V to 12.6 V at 1 mA test current, per Vishay Document Number 88406. This ±5% tolerance ensures consistent clamping behavior across production lots and supports reliable design margining for 12 V systems. The TPSMB12AHE3/52T's tight VBR distribution minimizes variation in surge response timing and clamping level.
Is TPSMB12AHE3/52T qualified to AEC-Q101?
Yes, TPSMB12AHE3/52T is AEC-Q101 qualified - confirmed by its HE3 suffix and explicit listing in Vishay's AEC-Q101 documentation (Document 88406, Revision 23-Jan-2024). The TPSMB12AHE3/52T undergoes full stress testing including HTGB, HTRB, and temperature cycling to meet automotive reliability standards. This qualification applies directly to the TPSMB12AHE3/52T device, not just the family.
What is the maximum clamping voltage of TPSMB12AHE3/52T under surge conditions?
The maximum clamping voltage (VC) of TPSMB12AHE3/52T is 16.7 V at 35.9 A peak pulse current (10/1000 µs waveform), per the Electrical Characteristics table in Vishay Document 88406. This value represents worst-case clamping performance across temperature and process variation. The TPSMB12AHE3/52T maintains this specification under all operating conditions within its rated junction temperature range.
Does TPSMB12AHE3/52T support bidirectional transient suppression?
No, TPSMB12AHE3/52T is unidirectional only - explicitly stated in the Features section of Vishay Document 88406. It protects against positive-going transients on the cathode side relative to anode. For bidirectional protection, two TPSMB12AHE3/52T devices must be connected in series opposition, or a dedicated bidirectional TVS (e.g., TPSMB12CA) should be selected. The TPSMB12AHE3/52T's polarity is marked by a cathode band.
What is the moisture sensitivity level (MSL) rating for TPSMB12AHE3/52T?
TPSMB12AHE3/52T meets MSL Level 1 per J-STD-020, with a maximum reflow peak temperature of 260 °C. This allows indefinite floor life and standard lead-free reflow without baking. The MSL Level 1 rating is verified in the Mechanical Data section of Vishay Document 88406 and applies specifically to the TPSMB12AHE3/52T due to its HE3 suffix and molding compound formulation.
TPSMB12AHE3/52T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 10.2V
- Voltage - Breakdown (Min):
- 11.4V
- Voltage - Clamping (Max) @ Ipp:
- 16.7V
- Current - Peak Pulse (10/1000µs):
- 35.9A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
TPSMB12AHE3/52T FAQ
1.How can I place an order for TPSMB12AHE3/52T through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMB12AHE3/52T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMB12AHE3/52T reliable?
The price and inventory of TPSMB12AHE3/52T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMB12AHE3/52T is usually 5 days.
3.What payment methods are accepted for TPSMB12AHE3/52T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMB12AHE3/52T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMB12AHE3/52T?
TPSMB12AHE3/52T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMB12AHE3/52T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMB12AHE3/52T?
For technical support, including TPSMB12AHE3/52T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMB12AHE3/52T requirements.
6.How does Aetrix verify that TPSMB12AHE3/52T is sourced from the original manufacturer or authorized distributors?
All TPSMB12AHE3/52T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMB12AHE3/52T meets industry standards.
7.What is the process for return or replacement of TPSMB12AHE3/52T?
All TPSMB12AHE3/52T units undergo pre-shipment inspection (PSI). If there is an issue with TPSMB12AHE3/52T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMB12AHE3/52T part is unused and in its original packaging.
Return procedure for TPSMB12AHE3/52T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMB12AHE3/52T Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
