Vishay General Semiconductor - Diodes Division TPSMB12HE3/52T
- Part No.:
- TPSMB12HE3/52T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
TPSMB12HE3/52T.pdf
- Description:
- TVS DIODE 9.72VWM 17.3VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:5,835
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Product details
Overview
TPSMB12HE3/52T from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping inductive switching surges and lightning-induced transients on power rails and signal lines. It features 12 V nominal breakdown voltage (VBR = 11.4–12.6 V at 1 mA), 10.2 V maximum stand-off voltage (VWM), 16.7 V clamping voltage at 35.9 A peak pulse current (IPPM), and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power supplies.
For engineers reviewing the TPSMB12HE3/52T datasheet, TPSMB12HE3/52T pinout, TPSMB12HE3/52T application, or TPSMB12HE3/52T equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 185 °C junction temperature rating, low incremental surge resistance, and compatibility with high-reliability PCB layouts requiring MSL Level 1 moisture sensitivity handling.
Technical Context
The TPSMB12HE3/52T employs passivated anisotropic rectifier technology optimized for stable clamping under repetitive surge conditions. Its junction design supports operation up to 185 °C and meets JESD201 Class 2 whisker resistance requirements, making it suitable for under-hood automotive environments where thermal cycling and long-term reliability are critical.
It delivers consistent clamping performance across temperature due to its +0.070 %/°C VBR temperature coefficient and maintains low leakage (<2 µA at VWM) even at elevated junction temperatures (≤150 °C). The device is rated for 75 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine) and exhibits fast response time typical of silicon avalanche TVS diodes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 11.4 / 12.0 / 12.6 V at 1 mA - defines precise avalanche initiation threshold for predictable overvoltage protection |
| VWM | 10.2 V - maximum continuous reverse operating voltage before leakage exceeds 2 µA |
| VC @ IPPM | 16.7 V at 35.9 A - clamped voltage during 600 W transient, limiting downstream component stress |
| PPPM | 600 W (10/1000 µs) - peak surge energy absorption capability without failure |
| TJ max. | +185 °C - enables use in high-temperature automotive and industrial control modules |
| Polarity | Unidirectional - protects against positive-going transients only; cathode band denotes polarity |
| MSL Level | Level 1 (J-STD-020) - no floor life limitation; compatible with standard SMT reflow up to 260 °C peak |
Pinout & Package
TPSMB12HE3/52T uses the SMB (DO-214AA) surface-mount package: 2-terminal, gull-wing leads, matte tin-plated, RoHS-compliant, halogen-free option available (HM3 suffix). Cathode identified by molded band; terminals solderable per J-STD-002 and JESD22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during forward conduction or surge clamping | Connected to protected circuit ground or low-side return path; determines unidirectional clamping direction |
| Cathode | Current exit point during avalanche breakdown | Connected to protected line (e.g., 12 V rail); color band marks this terminal for correct PCB orientation |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing - required for engine control, body electronics, and ADAS power rails |
| 185 °C junction rating | Enables deployment in high-ambient environments (e.g., near power converters or under hood) without derating or thermal shutdown |
| 600 W peak pulse power | Withstands ISO 7637-2 Pulse 1/2a/5a transients and IEC 61000-4-5 surge events in industrial power inputs |
| Low clamping ratio (VC/VBR ≈ 1.39) | Minimizes overvoltage overshoot during surge, reducing risk of latch-up or gate oxide damage in protected MOSFETs and ICs |
| MSL Level 1 | Eliminates bake-out requirement prior to reflow; supports high-yield automated assembly in volume production |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 12 V supply lines in engine control units (ECUs) and body control modules (BCMs) against load dump and inductive kickback. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between battery rail and local regulator input to clamp transients before they reach LDOs or microcontrollers. Use Value: Clamps to 16.7 V at 35.9 A, limiting voltage stress on downstream 16 V-rated regulators and ensuring system reset immunity during ISO 7637-2 Pulse 5a events. |
Use Scenario: Safeguarding analog front-end inputs of pressure, temperature, or position sensors in factory automation systems exposed to relay switching noise. IC Role / Device Role / Timing Role: Low-leakage (≤2 µA) TVS placed at sensor connector interface to absorb fast-rising EFT bursts without loading the signal path. Use Value: Maintains <2 µA leakage at 10.2 V VWM, preserving sensor accuracy while suppressing 4 kV EFT pulses per IEC 61000-4-4. |
| Telecom DC Power Input Protection | Consumer Device USB Power Path Protection |
Use Scenario: Securing 48 V DC input of PoE-powered network switches and base station radios against lightning-induced surges on outdoor cabling. IC Role / Device Role / Timing Role: Primary clamping device in multi-stage protection scheme, coordinated with GDTs and series impedance to meet IEC 61000-4-5 Level 4. Use Value: Delivers 600 W surge handling with 16.7 V clamping, enabling compact layout without external heat sinking in space-constrained telecom modules. |
Use Scenario: Adding robust overvoltage protection to USB-C power delivery (PD) input stages in portable monitors and docking stations. IC Role / Device Role / Timing Role: Secondary TVS after primary fuse and common-mode choke, guarding against hot-plug transients and adapter fault conditions. Use Value: Fast response and low VC prevent USB PD controller latch-up during 100 V/1 µs transients, supporting USB-IF compliance testing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ12A | Same SMB package, 12 V VBR, but rated for 600 W with 10/1000 µs waveform and 35.9 A IPPM; not AEC-Q101 qualified | Lacks automotive qualification; suitable for commercial/industrial use only | Select SMBJ12A when AEC-Q101 is not required and cost optimization is prioritized |
| TPSMB12AHM3 | Identical electrical specs and AEC-Q101 qualification; differs only in halogen-free molding compound and HM3 suffix | Required for RoHS+halogen-free compliance programs (e.g., EU automotive Tier 1s) | Choose TPSMB12AHM3 when halogen-free material compliance is mandated by OEM specifications |
Compared with SMBJ12A and TPSMB12AHM3, the TPSMB12HE3/52T provides identical surge performance and automotive qualification but uses standard RoHS-compliant (non-halogen-free) epoxy - offering optimal balance of qualification, thermal margin, and procurement flexibility for Tier 2 suppliers.
Availability
TPSMB12HE3/52T is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface hardening, and telecom DC input surge suppression requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for TPSMB12HE3/52T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on high-reliability, high-temperature, and automotive-qualified components.
The TPSMB series was developed specifically for demanding transient suppression in automotive and industrial power systems, combining AEC-Q101 qualification, 185 °C operation, and robust 600 W surge capability in compact SMB packages.
FAQ
What is the exact breakdown voltage range for TPSMB12HE3/52T?
The TPSMB12HE3/52T has a guaranteed breakdown voltage (VBR) range of 11.4 V to 12.6 V at 1 mA test current, measured per ANSI/IEEE C62.35. This tight tolerance ensures consistent clamping behavior across production lots and supports reliable overvoltage protection design in 12 V systems where margin above nominal rail is critical. The nominal value is 12.0 V.
Is TPSMB12HE3/52T qualified for automotive applications?
Yes, TPSMB12HE3/52T is AEC-Q101 qualified - verified through temperature cycling, high-temperature reverse bias (HTRB), and ESD testing per automotive reliability standards. Its 185 °C maximum junction temperature and MSL Level 1 rating further confirm suitability for under-hood and chassis-mounted automotive modules. The HE3 suffix explicitly denotes AEC-Q101 compliance.
What is the clamping voltage of TPSMB12HE3/52T at its rated peak pulse current?
The TPSMB12HE3/52T clamps to a maximum of 16.7 V at its rated peak pulse current of 35.9 A (10/1000 µs waveform). This clamping voltage is measured under standardized surge conditions and defines the upper voltage limit imposed on protected circuits during transient events - critical for ensuring downstream components remain within safe operating area.
Does TPSMB12HE3/52T have unidirectional or bidirectional polarity?
TPSMB12HE3/52T is unidirectional only. Its cathode is marked by a visible band on the SMB package body, and it conducts avalanche current only when the cathode is at higher potential than the anode. This configuration protects against positive-going transients on DC rails and is incompatible with AC or bipolar signal line protection without additional circuitry.
What is the maximum operating temperature and thermal derating behavior of TPSMB12HE3/52T?
The TPSMB12HE3/52T supports a maximum junction temperature (TJ) of +185 °C and operates from -65 °C to +185 °C. Its peak pulse power and current ratings are derated linearly above 25 °C ambient, per Figure 2 in the Vishay datasheet (Document Number: 88406); at 125 °C ambient, PPPM drops to ~400 W, maintaining functional integrity in high-temperature enclosures.
TPSMB12HE3/52T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 9.72V
- Voltage - Breakdown (Min):
- 10.8V
- Voltage - Clamping (Max) @ Ipp:
- 17.3V
- Current - Peak Pulse (10/1000µs):
- 34.7A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
TPSMB12HE3/52T FAQ
1.How can I place an order for TPSMB12HE3/52T through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMB12HE3/52T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMB12HE3/52T reliable?
The price and inventory of TPSMB12HE3/52T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMB12HE3/52T is usually 5 days.
3.What payment methods are accepted for TPSMB12HE3/52T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMB12HE3/52T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMB12HE3/52T?
TPSMB12HE3/52T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMB12HE3/52T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMB12HE3/52T?
For technical support, including TPSMB12HE3/52T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMB12HE3/52T requirements.
6.How does Aetrix verify that TPSMB12HE3/52T is sourced from the original manufacturer or authorized distributors?
All TPSMB12HE3/52T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMB12HE3/52T meets industry standards.
7.What is the process for return or replacement of TPSMB12HE3/52T?
All TPSMB12HE3/52T units undergo pre-shipment inspection (PSI). If there is an issue with TPSMB12HE3/52T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMB12HE3/52T part is unused and in its original packaging.
Return procedure for TPSMB12HE3/52T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMB12HE3/52T Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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