Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division TPSMB13AHE3/52T

Part No.:
TPSMB13AHE3/52T
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixTPSMB13AHE3/52T.pdf
Description:
TVS DIODE 11.1VWM 18.2VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,972

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

TPSMB13AHE3/52T from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode designed for clamping inductive switching surges and lightning-induced transients on power rails and signal lines. It features a 13.0 V nominal breakdown voltage (VBR), 11.1 V maximum stand-off voltage (VWM), 600 W peak pulse power (10/1000 µs), 33 A peak pulse current (IPPM), and 18.2 V maximum clamping voltage (VC) at IPPM, enabling robust protection of MOSFETs, ICs, and sensor interfaces in automotive and industrial power supplies.

For engineers reviewing the TPSMB13AHE3/52T datasheet, TPSMB13AHE3/52T pinout, TPSMB13AHE3/52T application, or TPSMB13AHE3/52T equivalent, key selection criteria include its AEC-Q101 qualification, TJ = 185 °C operation, SMB (DO-214AA) package compatibility, unidirectional polarity, and verified clamping performance under repetitive 0.01% duty-cycle surge conditions.

Technical Context

This TVS diode operates as a voltage-clamping device in parallel with protected circuitry, entering avalanche conduction when reverse voltage exceeds VBR = 12.4–13.7 V (min–max at IT = 1 mA). Its low incremental surge resistance and fast response time ensure effective suppression of sub-microsecond transients without latch-up or thermal runaway.

Designed for high-reliability environments, it supports continuous operation from –65 °C to +185 °C junction temperature, meets MSL Level 1 per J-STD-020 (260 °C reflow peak), and uses passivated anisotropic rectifier technology to maintain stable VBR drift (αT = 0.072 %/°C) across temperature.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min–max) 12.4 V – 13.7 V at IT = 1 mA: defines precise avalanche onset window for predictable clamping threshold
VWM 11.1 V max: ensures no conduction during normal 12 V rail operation, minimizing leakage (<2 µA)
VC @ IPPM 18.2 V max at 33 A: limits worst-case voltage seen by downstream ICs during 600 W transient events
PPPM 600 W (10/1000 µs): sustains standardized surge energy without degradation under 0.01% duty cycle
IFSM 75 A (8.3 ms half-sine): withstands non-repetitive inrush or fault currents in power supply inputs
TJ max +185 °C: enables placement near hot components (e.g., power MOSFETs, DC-DC inductors) without derating
AEC-Q101 Qualified: validated for automotive-grade reliability including temperature cycling, HTRB, and ESD

Pinout & Package

Package: SMB (DO-214AA) - surface-mount, molded plastic case with matte tin-plated leads, UL 94 V-0 rated, 0.220" × 0.130" footprint, cathode indicated by color band.

Pin/Terminal Circuit Role Design Meaning
Cathode (banded end) Transient current sink node Connected to protected line (e.g., 12 V rail); conducts avalanche current to ground during overvoltage
Anode Reference/return path Connected to system ground; completes clamping path with minimal inductance for fast response

Key Features

Feature Design Value
Junction passivation Optimized anisotropic rectifier process ensures stable VBR and low leakage over lifetime and temperature
High-temperature capability TJ = 185 °C rating allows direct placement on engine-control PCBs or near high-power converters
Clamping efficiency VC/VBR ratio ≤ 1.40 confirms low dynamic impedance for tight voltage limiting during fast transients
Reflow compatibility MSL Level 1 (260 °C peak) supports standard SMT assembly without preconditioning or special handling
AEC-Q101 qualification Validated for automotive applications including powertrain, body electronics, and ADAS sensor interfaces

Applications

Automotive Power Rail Protection Industrial Sensor Interface Clamping

Use Scenario: Protecting 12 V battery-fed ECUs against load-dump spikes (ISO 7637-2 Pulse 5a) and alternator transients.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between power input and ground to clamp surges before they reach LDOs or microcontrollers.

Use Value: Limits voltage to ≤18.2 V during 33 A transients, preventing damage to 20 V-rated input stages while maintaining AEC-Q101 compliance.

Use Scenario: Safeguarding analog sensor outputs (e.g., pressure, temperature) from ESD and cable discharge events in factory automation.

IC Role / Device Role / Timing Role: Low-capacitance TVS connected across differential signal pair to shunt fast transients without distorting mV-level signals.

Use Value: Achieves <2 µA leakage at 11.1 V, preserving signal integrity; clamps 8 kV contact ESD (IEC 61000-4-2) within nanoseconds.

DC-DC Converter Input Protection Telecom Line Surge Suppression

Use Scenario: Shielding buck converter inputs from inductive kickback caused by relay or solenoid switching in HVAC control modules.

IC Role / Device Role / Timing Role: Parallel-connected TVS absorbing 600 W pulses to prevent overvoltage shutdown or MOSFET avalanche failure.

Use Value: Withstands 75 A surge (8.3 ms) and maintains clamping below 18.2 V, ensuring uninterrupted converter operation during repeated switching events.

Use Scenario: Front-end protection for PoE-powered network equipment exposed to lightning-induced surges on Ethernet cables.

IC Role / Device Role / Timing Role: Primary clamping device on 48 V DC feed line, coordinated with gas discharge tubes for multi-stage protection.

Use Value: Provides fast-response, low-VC clamping (18.2 V) to protect IEEE 802.3af/at PD controllers without compromising power delivery stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ13A Same VBR range (12.4–13.7 V), but lower PPPM = 400 W and higher VC = 21.2 V; SMA package (smaller thermal mass) Limited to lower-energy transients; unsuitable for automotive load-dump where 600 W is required Select TPSMB13AHE3/52T when 600 W surge handling and AEC-Q101 qualification are mandatory
SMCJ13A Higher PPPM = 1500 W, same VBR, but larger SMC (DO-214AB) package; VC = 21.2 V Better for extreme surges but requires more PCB area and has slower thermal response than SMB Choose TPSMB13AHE3/52T for space-constrained automotive modules needing optimal power density and proven AEC-Q101 validation

Compared with SMAJ13A and SMCJ13A, the TPSMB13AHE3/52T delivers superior power density (600 W in SMB), tighter clamping (18.2 V vs. ≥21.2 V), and automotive-qualified reliability-making it the preferred choice for compact, high-temperature, and safety-critical 12 V system protection.

Availability

TPSMB13AHE3/52T is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, and telecom power supply designs requiring stable component supply, AEC-Q101 traceability, and consistent 600 W surge performance.

Supply support for TPSMB13AHE3/52T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for demanding industrial and automotive applications.

The TPSMB series is engineered specifically for surface-mount transient suppression in harsh environments, emphasizing high-temperature stability (TJ = 185 °C), AEC-Q101 qualification, and repeatable clamping performance under repetitive surge stress.

FAQ

What is the exact breakdown voltage range for TPSMB13AHE3/52T?

The TPSMB13AHE3/52T has a guaranteed breakdown voltage (VBR) range of 12.4 V to 13.7 V at test current IT = 1 mA, measured per ANSI/IEEE C62.35. This range ensures reliable avalanche initiation across manufacturing lots and temperature extremes, and is explicitly confirmed in the Vishay datasheet revision 23-Jan-2024 (Document Number: 88406).

Is TPSMB13AHE3/52T qualified for automotive use?

Yes, TPSMB13AHE3/52T is AEC-Q101 qualified, as confirmed by the "HE3" suffix and documentation in the Vishay datasheet. It undergoes full stress testing-including temperature cycling, high-temperature reverse bias (HTRB), and ESD-to meet automotive reliability requirements for powertrain, body, and ADAS systems.

What is the maximum clamping voltage of TPSMB13AHE3/52T during a surge event?

The TPSMB13AHE3/52T exhibits a maximum clamping voltage (VC) of 18.2 V at its rated peak pulse current (IPPM) of 33 A, tested with a 10/1000 µs waveform. This value is measured and guaranteed per the datasheet, ensuring downstream components see no more than 18.2 V during standardized surge events.

Does TPSMB13AHE3/52T have unidirectional or bidirectional polarity?

TPSMB13AHE3/52T is unidirectional only, as stated in the Vishay datasheet under FEATURES. Its cathode is marked by a color band, and it conducts only during reverse-biased overvoltage events-making it suitable for DC rail protection where polarity is fixed and forward conduction must be avoided.

What package type does TPSMB13AHE3/52T use, and what are its mounting requirements?

TPSMB13AHE3/52T uses the SMB (DO-214AA) package, with dimensions of 0.220" × 0.130", matte tin-plated leads, and MSL Level 1 rating. It requires 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal for optimal thermal dissipation and surge current handling, per Figure 2 in the Vishay datasheet.

TPSMB13AHE3/52T Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
11.1V
Voltage - Breakdown (Min):
12.4V
Voltage - Clamping (Max) @ Ipp:
18.2V
Current - Peak Pulse (10/1000µs):
33A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 185°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

TPSMB13AHE3/52T FAQ

1.How can I place an order for TPSMB13AHE3/52T through Aetrix?

Please submit a Request for Quotation (RFQ) for TPSMB13AHE3/52T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPSMB13AHE3/52T reliable?

The price and inventory of TPSMB13AHE3/52T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMB13AHE3/52T is usually 5 days.

3.What payment methods are accepted for TPSMB13AHE3/52T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMB13AHE3/52T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPSMB13AHE3/52T?

TPSMB13AHE3/52T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPSMB13AHE3/52T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPSMB13AHE3/52T?

For technical support, including TPSMB13AHE3/52T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMB13AHE3/52T requirements.

6.How does Aetrix verify that TPSMB13AHE3/52T is sourced from the original manufacturer or authorized distributors?

All TPSMB13AHE3/52T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMB13AHE3/52T meets industry standards.

7.What is the process for return or replacement of TPSMB13AHE3/52T?

All TPSMB13AHE3/52T units undergo pre-shipment inspection (PSI). If there is an issue with TPSMB13AHE3/52T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPSMB13AHE3/52T part is unused and in its original packaging.

Return procedure for TPSMB13AHE3/52T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TPSMB13AHE3/52T Tags

  • TPSMB13AHE3/52T
  • TPSMB13AHE3/52T PDF
  • TPSMB13AHE3/52T Datasheet
  • TPSMB13AHE3/52T Specifications
  • TPSMB13AHE3/52T Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division TPSMB13AHE3/52T
  • Buy TPSMB13AHE3/52T
  • TPSMB13AHE3/52T Price
  • TPSMB13AHE3/52T Distributor
  • TPSMB13AHE3/52T Supplier
  • TPSMB13AHE3/52T Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER