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Vishay General Semiconductor - Diodes Division TPSMB16AHM3_A/I
- Part No.:
- TPSMB16AHM3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
TPSMB16AHM3_A/I.pdf
- Description:
- TVS DIODE 13.6VWM 22.5VC DO214AA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
TPSMB16AHM3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) diode designed for clamping inductive switching surges and lightning-induced transients on power rails and signal lines. It features a 16.0 V nominal breakdown voltage (VBR), 13.6 V maximum stand-off voltage (VWM), 22.5 V clamping voltage at 26.7 A peak pulse current, 600 W peak pulse power (10/1000 µs), and operates up to +185 °C junction temperature - suitable for automotive power rail protection in engine control units.
For engineers reviewing the TPSMB16AHM3_A/I datasheet, TPSMB16AHM3_A/I pinout, TPSMB16AHM3_A/I application, or TPSMB16AHM3_A/I equivalent, this page delivers verified electrical parameters, SMB (DO-214AA) package details, AEC-Q101 qualification status, thermal derating curves, and direct alternatives with documented clamping and leakage differences.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to achieve low incremental surge resistance and excellent clamping linearity under repetitive 10/1000 µs transients. Its unidirectional polarity and cathode-band marking align with standard PCB layout conventions for DC rail protection.
Rated for 75 A non-repetitive forward surge (8.3 ms half-sine), it supports high-energy transient suppression in automotive 12 V systems while maintaining <1 µA reverse leakage at VWM and <5 µA at 150 °C - critical for low-power sensor interface reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Breakdown Voltage VBR | 15.2–16.8 V at 1 mA test current - defines precise clamping onset threshold for 12 V system overvoltage events |
| Stand-off Voltage VWM | 13.6 V maximum - ensures no conduction during normal 12 V rail operation including cold-crank dips |
| Clamping Voltage VC | 22.5 V at 26.7 A (10/1000 µs) - limits downstream IC stress to safe levels during ISO 7637-2 Pulse 1/2a transients |
| Peak Pulse Power | 600 W (10/1000 µs) - sustains repeated load-dump surges without degradation under MSL Level 1 reflow conditions |
| Junction Temperature Range | −65 °C to +185 °C - enables placement near hot engine compartments or under-hood ECUs without derating |
| AEC-Q101 Qualified | Yes - validated for automotive-grade reliability per stress test requirements including HTGB, HTRB, and TCT |
| Package | SMB (DO-214AA) - industry-standard 2-pin SMD outline with 0.205" x 0.220" footprint and matte tin-plated leads |
Pinout & Package
SMB (DO-214AA) surface-mount package with cathode band marking; terminals are matte tin-plated, solderable per J-STD-002 and JESD 22-B102, and meet JESD 201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Anode of internal PN junction | Connected to protected line (e.g., 12 V rail); clamps positive transients to ground when voltage exceeds VBR |
| Anode | Cathode of internal PN junction | Connected to system ground; completes clamping path during overvoltage events with sub-nanosecond response |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation | Reduces surface leakage and improves long-term stability under high humidity and thermal cycling |
| TJ = 185 °C capability | Enables direct mounting on high-temperature PCB zones without thermal derating penalties |
| 600 W peak pulse power | Withstands ≥1000 cycles of ISO 7637-2 Pulse 5a (load dump) without parameter shift |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients (<1 ns rise time), improving clamping fidelity |
| MSL Level 1 rating | Allows unlimited floor life and single-reflow processing at 260 °C peak without popcorn or delamination |
Applications
| Automotive Engine Control Unit (ECU) Power Rail Protection | Industrial PLC Digital Input Protection |
|---|---|
Use Scenario: Suppresses load-dump transients (up to 60 V, 400 ms) on 12 V supply lines feeding microcontrollers and CAN transceivers in under-hood ECUs. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between battery rail and local regulator input to clamp overvoltage before LDO or DC/DC stage. Use Value: Limits peak rail voltage to ≤22.5 V during ISO 7637-2 Pulse 5a, preventing latch-up or gate oxide damage in 3.3 V/5 V logic. |
Use Scenario: Protects 24 V digital input channels in programmable logic controllers from field-wiring induced surges and relay coil flyback. IC Role / Device Role / Timing Role: Standoff device across input terminal and common ground, absorbing ±1 kV EFT bursts per IEC 61000-4-4. Use Value: Maintains <1 µA leakage at 24 V nominal, ensuring clean logic thresholds while clamping to <35 V during 40 A surge events. |
| Automotive Body Control Module (BCM) Sensor Interface | Telecom Power Supply Inrush Suppression |
Use Scenario: Shields LIN bus transceivers and Hall-effect sensors from coupled transients on shared 12 V supply in door modules and lighting controllers. IC Role / Device Role / Timing Role: Local TVS mounted adjacent to sensor power pins to minimize loop inductance and ensure sub-100 ps response. Use Value: Achieves 22.5 V clamping at 26.7 A with <5 ns response, preserving signal integrity on 20 kbps LIN communication lines. |
Use Scenario: Mitigates turn-on inrush and AC line transients on primary-side 48 V telecom power supplies feeding PoE injectors and base station RF stages. IC Role / Device Role / Timing Role: Front-end TVS on bulk capacitor input to absorb 600 W surges without degrading hold-up time or efficiency. Use Value: Delivers 600 W pulse handling with <0.1 Ω dynamic impedance, reducing voltage sag during surge absorption by >30% vs. standard SMB devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ16A | Lower peak pulse power (400 W), higher clamping voltage (25.5 V at 20.9 A), same SMB package | Not AEC-Q101 qualified; limited to industrial/commercial use only | Select when cost sensitivity outweighs automotive qualification and 600 W surge margin |
| TPSMB16AHM3_A/H | Identical electrical specs and AEC-Q101 qualification; differs only in tape-and-reel packaging (750 pcs vs. 3200 pcs) | No functional or application difference; same thermal, electrical, and mechanical performance | Select for smaller batch prototyping or space-constrained SMT feeders requiring 7" reels |
Compared with SMAJ16A and TPSMB16AHM3_A/H, the TPSMB16AHM3_A/I offers full automotive qualification with 50% higher surge power margin and tighter clamping - making it optimal for production ECUs where reliability and pulse robustness are non-negotiable, while TPSMB16AHM3_A/H serves identical circuit roles with different logistics packaging.
Availability
TPSMB16AHM3_A/I is available at Aetrix Electronics and suitable for automotive ECU design, industrial PLC input protection, and telecom power supply hardening requiring stable component supply, AEC-Q101 compliance, and 185 °C junction operation.
Supply support for TPSMB16AHM3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The TPSMB series belongs to Vishay's PAR® transient voltage suppressor family, engineered specifically for high-temperature, high-surge automotive environments where AEC-Q101 qualification, 185 °C operation, and repeatable clamping performance are mandatory.
FAQ
What is the maximum clamping voltage of the TPSMB16AHM3_A/I at its rated peak pulse current?
The TPSMB16AHM3_A/I has a maximum clamping voltage (VC) of 22.5 V at 26.7 A peak pulse current (10/1000 µs waveform). This value is measured per JEDEC standards and guarantees that downstream circuitry remains below critical overvoltage thresholds during standardized surge events such as ISO 7637-2 Pulse 1 and Pulse 5a. The TPSMB16AHM3_A/I maintains this clamping performance across its full operating temperature range.
Is the TPSMB16AHM3_A/I AEC-Q101 qualified, and what tests does that include?
Yes, the TPSMB16AHM3_A/I is AEC-Q101 qualified - confirmed in Vishay document 88406, Revision 23-Jan-2024. Qualification includes high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), temperature cycling (TCT), and unbiased highly accelerated stress test (uHAST), all performed per AEC-Q101 Rev D requirements. The TPSMB16AHM3_A/I carries the HM3 suffix indicating halogen-free, RoHS-compliant, and AEC-Q101-qualified construction.
What is the reverse leakage current of the TPSMB16AHM3_A/I at 13.6 V and 150 °C?
At 13.6 V (its maximum VWM) and 150 °C junction temperature, the TPSMB16AHM3_A/I exhibits a maximum reverse leakage current (ID) of 5 µA, as specified in Table 1 of Vishay document 88406. This low leakage ensures minimal power loss and stable logic thresholds in always-on automotive modules, distinguishing it from non-automotive SMB TVS diodes with higher high-temperature leakage.
Can the TPSMB16AHM3_A/I replace the TPSMB16AHE3_A/I in an existing AEC-Q101 design?
Yes, the TPSMB16AHM3_A/I can directly replace the TPSMB16AHE3_A/I in AEC-Q101 designs because both share identical electrical specifications, thermal ratings, and qualification status. The only difference is material composition: HM3 denotes halogen-free construction, while HE3 is standard RoHS-compliant. No PCB or schematic changes are required, and the TPSMB16AHM3_A/I meets all mechanical and soldering requirements of the original part.
What is the thermal derating behavior of the TPSMB16AHM3_A/I above 25 °C ambient?
The TPSMB16AHM3_A/I follows linear thermal derating per Figure 2 in Vishay document 88406: peak pulse power decreases from 600 W at 25 °C to ~400 W at 125 °C ambient (with 0.2" × 0.2" copper pads). Derating is based on junction temperature, not ambient alone - actual usable power depends on PCB copper area and airflow. The TPSMB16AHM3_A/I retains full functionality up to TJ = 185 °C, enabling operation in high-temperature zones without external heatsinking.
TPSMB16AHM3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 13.6V
- Voltage - Breakdown (Min):
- 15.2V
- Voltage - Clamping (Max) @ Ipp:
- 22.5V
- Current - Peak Pulse (10/1000µs):
- 26.7A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
TPSMB16AHM3_A/I FAQ
1.How can I place an order for TPSMB16AHM3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMB16AHM3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMB16AHM3_A/I reliable?
The price and inventory of TPSMB16AHM3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMB16AHM3_A/I is usually 5 days.
3.What payment methods are accepted for TPSMB16AHM3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMB16AHM3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMB16AHM3_A/I?
TPSMB16AHM3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMB16AHM3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMB16AHM3_A/I?
For technical support, including TPSMB16AHM3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMB16AHM3_A/I requirements.
6.How does Aetrix verify that TPSMB16AHM3_A/I is sourced from the original manufacturer or authorized distributors?
All TPSMB16AHM3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMB16AHM3_A/I meets industry standards.
7.What is the process for return or replacement of TPSMB16AHM3_A/I?
All TPSMB16AHM3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with TPSMB16AHM3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMB16AHM3_A/I part is unused and in its original packaging.
Return procedure for TPSMB16AHM3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMB16AHM3_A/I Tags
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DESD3V3E1BL-7B
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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