Vishay General Semiconductor - Diodes Division TPSMB18HE3/5BT
- Part No.:
- TPSMB18HE3/5BT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
TPSMB18HE3/5BT.pdf
- Description:
- TVS DIODE 14.5VWM 26.5VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
TPSMB18HE3/5BT from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for clamping inductive switching surges and lightning-induced transients on power rails and signal lines. It features a 18.0 V nominal breakdown voltage (VBR), 15.3 V stand-off voltage (VWM), 600 W peak pulse power (10/1000 µs), 23.8 A peak pulse current (IPPM), and 25.2 V maximum clamping voltage (VC) at IPPM, enabling robust protection of MOSFETs, ICs, and sensor interfaces in automotive and industrial control systems.
For engineers reviewing the TPSMB18HE3/5BT datasheet, TPSMB18HE3/5BT pinout, TPSMB18HE3/5BT application, or TPSMB18HE3/5BT equivalent, this page delivers verified electrical parameters, SMB (DO-214AA) package mapping, cathode/anode terminal roles, AEC-Q101 qualification status, and real-world use cases in 12 V automotive power distribution, industrial PLC I/O protection, and high-reliability sensor front-ends.
Technical Context
The TPSMB18HE3/5BT employs passivated anisotropic rectifier technology to achieve stable junction behavior up to 185 °C operating temperature, supporting under-hood automotive environments. Its unidirectional polarity and low incremental surge resistance ensure fast response (<1 ns) and minimal voltage overshoot during transient events.
Rated for 600 W peak pulse power with 10/1000 µs waveform and 75 A non-repetitive forward surge current (IFSM), it operates within -65 °C to +185 °C junction range and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 17.1 / 18.0 / 18.9 V - Ensures reliable turn-on above 15.3 V system operating rail while avoiding false triggering |
| VWM | 15.3 V - Maximum continuous reverse voltage before leakage exceeds 1 µA, compatible with 12 V nominal systems |
| VC @ IPPM | 25.2 V - Clamped voltage during 23.8 A transient, limiting stress on downstream 30 V-rated MOSFETs or logic inputs |
| PPPM | 600 W - Sustains high-energy transients (e.g., ISO 7637-2 Pulse 1/2a) without degradation |
| TJ max. | +185 °C - Enables placement near heat sources in engine control units and power converters |
| Polarity | Unidirectional - Protects DC rails only; requires correct orientation relative to cathode band marking |
| Package | SMB (DO-214AA) - Standardized surface-mount footprint with 0.205" × 0.220" pad layout and RoHS-compliant matte tin plating |
Pinout & Package
TPSMB18HE3/5BT uses the SMB (DO-214AA) package: a two-terminal, surface-mount plastic case with cathode identified by a color band. Terminals are matte tin-plated, solderable per J-STD-002 and JESD 22-B102, and qualified to JESD 201 Class 2 whisker test.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink node | Connected to protected line; conducts surge current to ground when VLINE exceeds VBR |
| Anode | Reference/return path | Typically tied to system ground or low-impedance return plane; completes clamping path during overvoltage event |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock per AEC standard |
| 185 °C junction rating | Supports operation in high-temperature zones such as powertrain ECUs and motor drive inverters without derating |
| 600 W peak pulse power | Withstands repetitive ISO 7637-2 Pulse 5a (load dump) events in 12 V vehicle electrical systems |
| Low clamping ratio (VC/VBR = 1.40) | Minimizes voltage overshoot during fast transients, reducing risk of latch-up or gate oxide damage in protected FETs |
| MSL Level 1 moisture sensitivity | Enables standard SMT reflow without dry-bag storage or baking, simplifying manufacturing logistics |
Applications
| Automotive Power Distribution | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Suppressing load-dump transients (ISO 7637-2 Pulse 5a) on 12 V battery-fed circuits in body control modules and lighting drivers. IC Role / Device Role / Timing Role: Primary clamping device placed between battery rail and point-of-load regulator input. Use Value: Limits voltage excursion to ≤25.2 V during 100 V/100 ms load dump, protecting 30 V-input DC/DC converters and microcontrollers. | Use Scenario: Guarding analog sensor outputs (e.g., pressure, temperature) against ESD and cable discharge events in factory automation I/O modules. IC Role / Device Role / Timing Role: Signal-line TVS placed directly at connector entry point, shunting transients before conditioning amplifiers. Use Value: Clamps 8 kV contact ESD (IEC 61000-4-2) to <30 V within <1 ns, preserving ADC reference integrity and preventing op-amp saturation. |
| Motor Drive Gate Protection | Telecom Power Supply Input |
Use Scenario: Shielding high-side N-channel MOSFET gates from inductive kickback during PWM switching in BLDC motor controllers. IC Role / Device Role / Timing Role: Unidirectional TVS connected between gate and source, referenced to local driver ground. Use Value: Clamps gate-source voltage to ≤25.2 V during 100 V/100 ns ringing, preventing gate oxide rupture in 20 V-rated logic-level FETs. | Use Scenario: Front-end surge suppression on 48 V telecom rectifier outputs exposed to lightning-induced surges per IEC 61000-4-5. IC Role / Device Role / Timing Role: Secondary-stage TVS after bulk MOV, providing precise clamping for downstream DC/DC stages. Use Value: Delivers 600 W pulse handling at 48 V system level with 25.2 V clamping, ensuring compliance with GR-1089-CORE Level 3 surge immunity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ18A | Same SMB package, identical VBR (17.1–18.9 V), but rated for 600 W with lower IPPM (23.3 A) and higher VC (29.2 V) | Higher clamping voltage reduces margin for 30 V-rated devices; less suitable for tight-voltage-margin designs | Select TPSMB18HE3/5BT when lower VC (25.2 V vs. 29.2 V) is critical for protecting low-voltage logic or gate drivers |
| SMCJ18A | Larger SMC (DO-214AB) package, same VBR range, higher PPPM (1500 W), but longer lead time and higher cost | Requires PCB redesign due to larger footprint and thermal pad requirements; over-specified for 600 W needs | Choose TPSMB18HE3/5BT for space-constrained layouts where SMB footprint and 600 W capability are optimal balance |
Compared with SMBJ18A and SMCJ18A, the TPSMB18HE3/5BT offers superior clamping performance in the same SMB footprint while avoiding unnecessary cost and board area overhead-making it ideal for automotive and industrial designs demanding precision voltage limiting without package compromise.
Availability
TPSMB18HE3/5BT is available at Aetrix Electronics and suitable for automotive power distribution, industrial sensor interface protection, motor drive gate protection, and telecom power supply input applications requiring stable component supply across production lifecycles.
Supply support for TPSMB18HE3/5BT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, high-temperature operation, and automotive qualification.
The TPSMB series belongs to Vishay's PAR® family of high-temperature-stable TVS diodes, engineered specifically for harsh-environment transient suppression in automotive, industrial, and telecom infrastructure where junction temperatures exceed 150 °C.
FAQ
What is the breakdown voltage tolerance of the TPSMB18HE3/5BT?
The TPSMB18HE3/5BT has a specified breakdown voltage (VBR) range of 17.1 V (minimum) to 18.9 V (maximum) at 1 mA test current, with 18.0 V as the nominal value. This ±5.6% tolerance ensures consistent clamping behavior across production lots while maintaining compatibility with 12 V system margins. The TPSMB18HE3/5BT datasheet confirms this range under "ELECTRICAL CHARACTERISTICS" table for device marking code LEP.
Is the TPSMB18HE3/5BT AEC-Q101 qualified?
Yes, the TPSMB18HE3/5BT is AEC-Q101 qualified. The HE3 suffix explicitly denotes RoHS-compliant and AEC-Q101 qualified construction, as stated in the Vishay document 88406 under "MECHANICAL DATA" and "ORDERING INFORMATION." This qualification covers stress tests including temperature cycling, high-temperature operating life, and ESD, confirming suitability for automotive powertrain and chassis applications.
What is the maximum clamping voltage of the TPSMB18HE3/5BT at its rated peak pulse current?
The maximum clamping voltage (VC) of the TPSMB18HE3/5BT is 25.2 V at its rated peak pulse current (IPPM) of 23.8 A, measured using the 10/1000 µs waveform. This value is confirmed in the "ELECTRICAL CHARACTERISTICS" table for device type TPSMB18A (LEP marking) and defines the upper voltage limit imposed on protected circuitry during worst-case transient events.
Does the TPSMB18HE3/5BT have bidirectional polarity?
No, the TPSMB18HE3/5BT is unidirectional only. The Vishay datasheet explicitly states "Available in unidirectional polarity only" under FEATURES, and the device marking code LEP corresponds to the unidirectional TPSMB18A variant. Bidirectional versions (e.g., TPSMB18CA) use different marking codes and are not represented by the TPSMB18HE3/5BT part number.
What is the thermal resistance (RθJA) of the TPSMB18HE3/5BT in standard mounting conditions?
The datasheet does not specify RθJA for the TPSMB18HE3/5BT. Vishay provides derating curves (Fig. 2) showing pulse power vs. junction temperature but omits absolute thermal resistance values. For thermal design, engineers should rely on the 185 °C maximum junction temperature rating and apply standard SMB (DO-214AA) layout guidelines-0.2" × 0.2" copper pads per terminal-as referenced in the "MAXIMUM RATINGS" notes.
TPSMB18HE3/5BT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 14.5V
- Voltage - Breakdown (Min):
- 16.2V
- Voltage - Clamping (Max) @ Ipp:
- 26.5V
- Current - Peak Pulse (10/1000µs):
- 22.6A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
TPSMB18HE3/5BT FAQ
1.How can I place an order for TPSMB18HE3/5BT through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMB18HE3/5BT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMB18HE3/5BT reliable?
The price and inventory of TPSMB18HE3/5BT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMB18HE3/5BT is usually 5 days.
3.What payment methods are accepted for TPSMB18HE3/5BT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMB18HE3/5BT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMB18HE3/5BT?
TPSMB18HE3/5BT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMB18HE3/5BT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMB18HE3/5BT?
For technical support, including TPSMB18HE3/5BT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMB18HE3/5BT requirements.
6.How does Aetrix verify that TPSMB18HE3/5BT is sourced from the original manufacturer or authorized distributors?
All TPSMB18HE3/5BT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMB18HE3/5BT meets industry standards.
7.What is the process for return or replacement of TPSMB18HE3/5BT?
All TPSMB18HE3/5BT units undergo pre-shipment inspection (PSI). If there is an issue with TPSMB18HE3/5BT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMB18HE3/5BT part is unused and in its original packaging.
Return procedure for TPSMB18HE3/5BT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMB18HE3/5BT Tags

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ESD9B5.0ST5G
onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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onsemi

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Diodes Incorporated

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D5V0P1B2LP-7B
Diodes Incorporated

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DESD5V0U1BA-7
Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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PESD2V0Y1BSFYL
Nexperia USA Inc.

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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

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D5V0L1B2WS-7
Diodes Incorporated
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