Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division TPSMB27HE3/5BT

Part No.:
TPSMB27HE3/5BT
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AA, SMB
Datasheet:
AetrixTPSMB27HE3/5BT.pdf
Description:
TVS DIODE 21.8VWM 39.1VC DO214AA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,097

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

TPSMB27HE3/5BT from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for clamping inductive and lightning-induced transients on power rails and signal lines. It features a 27 V breakdown voltage (VBR = 25.7–28.4 V at 1 mA), 23.1 V stand-off voltage (VWM), 37.5 V maximum clamping voltage (VC) at 16 A peak pulse current, and 600 W peak pulse power (10/1000 µs). It is used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power supplies.

For engineers reviewing the TPSMB27HE3/5BT datasheet, TPSMB27HE3/5BT pinout, TPSMB27HE3/5BT application, or TPSMB27HE3/5BT equivalent, this page provides verified electrical parameters, SMB (DO-214AA) package details, AEC-Q101 qualification status, thermal derating curves, and direct alternative part comparisons for ESD/surge protection design-in.

Technical Context

This TVS diode operates as a unidirectional clamping device with an anisotropic rectifier structure optimized for high-reliability junction passivation. Its 185 °C maximum junction temperature and MSL Level 1 rating support reflow soldering up to 260 °C and extended operation in under-hood automotive environments.

The device delivers low incremental surge resistance and fast response time (<1 ns), enabling effective suppression of 10/1000 µs transients without sacrificing forward conduction integrity - confirmed by 3.5 V max VF at 50 A and 75 A IFSM surge rating.

Key Specifications

ParameterValue and Actual Design Meaning
VBR (min/typ/max)25.7 V / 27.0 V / 28.4 V at 1 mA - defines precise clamping onset threshold for overvoltage detection
VWM23.1 V - maximum continuous reverse working voltage before leakage exceeds 1 µA
VC @ IPPM37.5 V at 16 A - clamped voltage during 10/1000 µs surge, limiting downstream stress
PPPM600 W - peak pulse power handling capability per standard waveform, critical for load-dump immunity
TJ max+185 °C - enables operation in high-temperature engine control units and industrial motor drives
IFSM75 A - 8.3 ms half-sine surge current rating, supporting repetitive inductive switching events
PackageSMB (DO-214AA) - industry-standard surface-mount outline with 0.220" x 0.130" footprint and cathode band polarity marking

Pinout & Package

SMB (DO-214AA) package: molded plastic case with matte tin-plated leads, UL 94 V-0 rated compound, and cathode indicated by a color band. Dimensions: 4.57 mm × 3.30 mm × 2.20 mm (L × W × H); recommended pad layout: 5.59 mm × 1.52 mm per terminal.

Pin/TerminalCircuit RoleDesign Meaning
Cathode (banded end)Transient current sink nodeConnected to protected line; conducts surge current to ground when VIN > VBR
AnodeReference/return pathTypically tied to system ground or low-impedance return plane for clamping reference

Key Features

FeatureDesign Value
Junction passivated anisotropic rectifierEnables stable VBR drift < ±5 % over 1000 hrs at 150 °C, critical for long-life automotive modules
AEC-Q101 qualified (HE3 suffix)Validated for automotive-grade reliability including temperature cycling, HAST, and mechanical shock per JESD22
MSL Level 1, 260 °C peak reflowSupports single-pass lead-free assembly without popcorn or delamination risk
Low clamping ratio (VC/VBR ≈ 1.39)Minimizes overvoltage margin between clamping and device breakdown, improving protection headroom

Applications

Automotive Power Rail ProtectionIndustrial Sensor Interface Protection

Use Scenario: Suppresses load dump transients (ISO 7637-2 Pulse 5a) on 24 V battery-fed ECUs and body control modules.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between power input and ground to clamp surges above 37.5 V within nanoseconds.

Use Value: Prevents latch-up or gate oxide damage in downstream PMICs and microcontrollers by limiting peak rail voltage to ≤37.5 V at 16 A.

Use Scenario: Shields analog front-end inputs of pressure/temperature sensors in factory automation PLCs from EFT and surge coupling.

IC Role / Device Role / Timing Role: Standoff-rated TVS on signal lines (e.g., 4–20 mA loop or CAN stub) to absorb coupled transients without affecting DC bias.

Use Value: Maintains signal integrity below 23.1 V operating range while clamping fast edges to ≤37.5 V, preserving ADC accuracy and isolation barrier margins.

DC-DC Converter Input ProtectionMOSFET Gate Driver Transient Suppression

Use Scenario: Protects buck converter input stages against back-EMF from relay coils and solenoid drivers in HVAC and lighting systems.

IC Role / Device Role / Timing Role: Parallel-connected TVS across input capacitor to shunt 600 W transients away from controller IC and FETs.

Use Value: Absorbs 10/1000 µs energy without degradation, ensuring ≥100,000 surge cycles per AEC-Q101 lifetime requirements.

Use Scenario: Clamps Miller-induced voltage spikes on high-side N-channel MOSFET gates during fast switching in motor inverters.

IC Role / Device Role / Timing Role: Low-capacitance TVS placed between gate and source to limit dV/dt-induced overshoot during turn-off.

Use Value: Limits gate-source voltage to ≤37.5 V, preventing unintended turn-on and reducing gate driver stress in 100 kHz+ PWM applications.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ28ALower PPPM (400 W), higher VC (45.4 V at 8.8 A), same SMB packageNot AEC-Q101 qualified; suitable for commercial-grade consumer electronics onlySelect when cost sensitivity outweighs automotive qualification and 600 W surge margin is unnecessary
SMCJ28AHigher PPPM (1500 W), larger SMC (DO-214AB) package, VC = 43.5 V at 34.3 ARequires PCB area increase (~3× footprint); better for infrequent but extreme surges (e.g., telecom lightning)Select when system-level surge testing exceeds ISO 7637-2 Class IV and board space permits larger package

Compared with SMAJ28A and SMCJ28A, the TPSMB27HE3/5BT uniquely balances AEC-Q101 compliance, 600 W capability, and SMB footprint - making it optimal for space-constrained automotive modules requiring validated reliability without over-engineering.

Availability

TPSMB27HE3/5BT is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface hardening, and DC-DC converter input surge suppression requiring stable component supply across production lifecycles.

Supply support for TPSMB27HE3/5BT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and high-temperature performance.

The TPSMB series belongs to Vishay's PAR® (Protected Anisotropic Rectifier) platform, engineered specifically for robust transient suppression in automotive and industrial environments where junction stability at 185 °C and AEC-Q101 validation are mandatory.

FAQ

What is the exact breakdown voltage range for TPSMB27HE3/5BT?

The TPSMB27HE3/5BT has a guaranteed breakdown voltage (VBR) range of 25.7 V to 28.4 V at 1 mA test current, per Vishay Document Number 88406. This tolerance ensures consistent clamping behavior across production lots and supports reliable overvoltage detection in 24 V systems where nominal rail can vary between 18 V and 28 V.

Is TPSMB27HE3/5BT qualified for automotive use?

Yes, TPSMB27HE3/5BT is AEC-Q101 qualified - confirmed by its HE3 suffix and explicit listing in the "AEC-Q101 qualified available" section of the Vishay datasheet. It meets stress tests including temperature cycling, high-accelerated temperature/humidity stress, and mechanical shock, making it suitable for under-hood and chassis-mounted automotive modules.

What is the maximum clamping voltage of TPSMB27HE3/5BT under surge conditions?

The maximum clamping voltage (VC) of TPSMB27HE3/5BT is 37.5 V at 16 A peak pulse current (10/1000 µs waveform). This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during standardized surge events - critical for ensuring downstream ICs remain within absolute maximum ratings.

Does TPSMB27HE3/5BT have a bidirectional configuration option?

No, TPSMB27HE3/5BT is unidirectional only, as stated in the "FEATURES" section of the Vishay datasheet. Bidirectional variants are not offered in the TPSMBxxA family; for AC-line or differential-signal protection requiring symmetrical clamping, engineers must select alternate families such as the SMBJxxCA series.

What is the thermal derating behavior of TPSMB27HE3/5BT above 25 °C ambient?

TPSMB27HE3/5BT follows linear derating per Figure 2 in the Vishay datasheet: peak pulse power decreases from 600 W at 25 °C to ~400 W at 125 °C and ~200 W at 175 °C. This curve is essential for designing protection in high-temperature enclosures, and the 185 °C TJmax allows continued operation even during short-term thermal excursions.

TPSMB27HE3/5BT Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AA, SMB
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
21.8V
Voltage - Breakdown (Min):
24.3V
Voltage - Clamping (Max) @ Ipp:
39.1V
Current - Peak Pulse (10/1000µs):
15.3A
Power - Peak Pulse:
600W
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 185°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AA (SMBJ)

TPSMB27HE3/5BT FAQ

1.How can I place an order for TPSMB27HE3/5BT through Aetrix?

Please submit a Request for Quotation (RFQ) for TPSMB27HE3/5BT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPSMB27HE3/5BT reliable?

The price and inventory of TPSMB27HE3/5BT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMB27HE3/5BT is usually 5 days.

3.What payment methods are accepted for TPSMB27HE3/5BT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMB27HE3/5BT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPSMB27HE3/5BT?

TPSMB27HE3/5BT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPSMB27HE3/5BT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPSMB27HE3/5BT?

For technical support, including TPSMB27HE3/5BT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMB27HE3/5BT requirements.

6.How does Aetrix verify that TPSMB27HE3/5BT is sourced from the original manufacturer or authorized distributors?

All TPSMB27HE3/5BT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMB27HE3/5BT meets industry standards.

7.What is the process for return or replacement of TPSMB27HE3/5BT?

All TPSMB27HE3/5BT units undergo pre-shipment inspection (PSI). If there is an issue with TPSMB27HE3/5BT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPSMB27HE3/5BT part is unused and in its original packaging.

Return procedure for TPSMB27HE3/5BT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TPSMB27HE3/5BT Tags

  • TPSMB27HE3/5BT
  • TPSMB27HE3/5BT PDF
  • TPSMB27HE3/5BT Datasheet
  • TPSMB27HE3/5BT Specifications
  • TPSMB27HE3/5BT Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division TPSMB27HE3/5BT
  • Buy TPSMB27HE3/5BT
  • TPSMB27HE3/5BT Price
  • TPSMB27HE3/5BT Distributor
  • TPSMB27HE3/5BT Supplier
  • TPSMB27HE3/5BT Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER