Vishay General Semiconductor - Diodes Division TPSMB33AHE3/52T
- Part No.:
- TPSMB33AHE3/52T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
TPSMB33AHE3/52T.pdf
- Description:
- TVS DIODE 28.2VWM 45.7VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
TPSMB33AHE3/52T from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for clamping inductive switching surges and lightning-induced transients on power rails and signal lines. It features a 33 V breakdown voltage (VBR = 31.4–34.7 V at IT = 1 mA), 28.2 V stand-off voltage (VWM), 45.7 V maximum clamping voltage (VC) at 13.1 A peak pulse current, 600 W peak pulse power (10/1000 μs), and operates up to +185 °C junction temperature - deployed in automotive power supply protection and industrial sensor interface circuits.
For engineers reviewing the TPSMB33AHE3/52T datasheet, TPSMB33AHE3/52T pinout, TPSMB33AHE3/52T application, or TPSMB33AHE3/52T equivalent, key selection criteria include unidirectional polarity, SMB (DO-214AA) package compatibility, AEC-Q101 qualification status, TJ = 185 °C thermal rating, and clamping performance under repetitive 10/1000 μs surge conditions.
Technical Context
The TPSMB33AHE3/52T employs passivated anisotropic rectifier technology optimized for high-temperature stability and low incremental surge resistance. Its unidirectional architecture provides asymmetric conduction: low forward voltage (VF = 3.5 V at 50 A) during surge conduction and sub-1 μA reverse leakage at VWM = 28.2 V.
It is rated for 75 A non-repetitive forward surge current (IFSM, 8.3 ms half-sine), derated above 25 °C per Fig. 2, and meets MSL Level 1 per J-STD-020 with 260 °C reflow peak. The device's temperature coefficient of VBR is +0.089 %/°C, enabling predictable clamping shift across its -65 °C to +185 °C operating range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 31.4 V / 33.0 V / 34.7 V at IT = 1 mA - defines precise avalanche initiation threshold for reliable overvoltage triggering |
| VWM | 28.2 V - maximum continuous reverse working voltage before leakage exceeds 1 μA; sets safe DC bias margin |
| VC @ IPPM | 45.7 V at 13.1 A (10/1000 μs) - clamping voltage limiting downstream IC stress during surge events |
| PPPM | 600 W - peak pulse power handling capability under standardized surge waveform; determines energy absorption capacity |
| TJ max. | +185 °C - enables operation in under-hood automotive and high-ambient industrial environments without derating |
| Polarity | Unidirectional - blocks reverse voltage only; requires correct cathode orientation relative to protected rail |
| Package | SMB (DO-214AA) - industry-standard surface-mount outline with 0.220" × 0.130" footprint and matte tin-plated leads |
Pinout & Package
TPSMB33AHE3/52T uses the SMB (DO-214AA) surface-mount package: cathode indicated by a color band; terminals are anode and cathode only. Molding compound meets UL 94 V-0; leads are matte tin-plated and solderable per J-STD-002/JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Surge return path | Connected to system ground or lower-potential rail; conducts avalanche current during overvoltage |
| Anode | Protected line input | Connected to power rail or signal line being safeguarded; reverse-biased during normal operation |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD per AEC standard |
| Junction passivation design | Reduces surface leakage and improves long-term stability under high-humidity and high-TJ conditions |
| 600 W peak pulse power (10/1000 μs) | Withstands repeated transient energy bursts typical of ISO 7637-2 Load Dump and IEC 61000-4-5 surges |
| Low clamping ratio (VC/VBR ≈ 1.39) | Minimizes overvoltage overshoot during fast transients, protecting 3.3 V/5 V/12 V logic and power stages |
| MSL Level 1, 260 °C peak reflow | Enables single-pass lead-free assembly without moisture-related popcorning or delamination |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs against load dump and alternator transients per ISO 7637-2. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power input and ground to clamp surges before they reach LDOs or microcontrollers. Use Value: Withstands 600 W pulses and operates up to +185 °C, ensuring robustness in engine compartment mounting locations. |
Use Scenario: Safeguarding analog outputs (e.g., 4–20 mA, 0–10 V) of pressure/temperature sensors in factory automation. IC Role / Device Role / Timing Role: Low-capacitance TVS connected across signal and return lines to suppress ESD and inductive kickback. Use Value: Sub-1 μA leakage at 28.2 V ensures minimal impact on precision sensor accuracy and offset drift. |
| Consumer Power Adapter Input Stage | Telecom DC Power Feed Protection |
Use Scenario: Secondary-side overvoltage suppression in AC/DC adapters powering USB-C PD devices. IC Role / Device Role / Timing Role: Standoff-rated TVS on +5 V/+9 V/+15 V output rails to absorb coupling noise from primary-side switching. Use Value: 45.7 V clamping voltage prevents latch-up in downstream USB controllers while maintaining 28.2 V operational margin. |
Use Scenario: Protecting PoE-powered equipment (e.g., IP cameras, access points) from induced surges on 48 V DC feed lines. IC Role / Device Role / Timing Role: Unidirectional TVS installed at DC input connector to shunt common-mode transients to chassis ground. Use Value: AEC-Q101 qualification and 185 °C rating support extended field life in outdoor telecom enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar unidirectional TVS applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ33A (ON Semiconductor) | VBR = 35.6–39.4 V; VC = 53.3 V @ 11.2 A; same SMB package; not AEC-Q101 qualified | Lacks automotive qualification; higher clamping voltage reduces margin for 3.3 V logic protection | Preferred for cost-sensitive industrial designs where AEC-Q101 is not required |
| SMCJ33A (Littelfuse) | VBR = 36.7–40.6 V; VC = 53.3 V @ 11.3 A; larger SMC (DO-214AB) package; AEC-Q101 qualified | Requires PCB layout change due to larger footprint; higher power rating (1500 W) exceeds TPSMB33AHE3/52T's 600 W | Select when higher surge energy handling is needed and board space permits SMC package |
Compared with SMBJ33A and SMCJ33A, the TPSMB33AHE3/52T delivers tighter VBR tolerance (±5 % vs. ±10 %), lower clamping voltage (45.7 V vs. ≥53.3 V), and AEC-Q101 qualification in the compact SMB outline - making it optimal for space-constrained automotive and high-reliability industrial nodes.
Availability
TPSMB33AHE3/52T is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, and telecom power feed protection requiring stable component supply, AEC-Q101 compliance, and high-temperature operational integrity.
Supply support for TPSMB33AHE3/52T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS, MOSFETs, and optoelectronics with emphasis on reliability, thermal performance, and automotive qualification.
The TPSMB series belongs to Vishay's PAR® (Passivated Anisotropic Rectifier) TVS family, engineered specifically for high-temperature, high-reliability transient suppression in automotive and industrial power systems.
FAQ
What is the exact breakdown voltage range for TPSMB33AHE3/52T?
The TPSMB33AHE3/52T has a guaranteed breakdown voltage (VBR) range of 31.4 V to 34.7 V at test current IT = 1 mA, with nominal value 33.0 V. This specification is measured per ANSI/IEEE C62.35 and confirmed in Vishay's official datasheet revision 23-Jan-2024 (Doc. #88406). The TPSMB33AHE3/52T maintains this tolerance across its full operating temperature range.
Is TPSMB33AHE3/52T AEC-Q101 qualified?
Yes, the TPSMB33AHE3/52T is AEC-Q101 qualified. The "HE3" suffix explicitly denotes RoHS-compliant, AEC-Q101-qualified construction, validated per stress tests including HTGB, HTRB, temperature cycling, and ESD. This qualification is documented in Vishay's ordering information and mechanical data sections for the TPSMB33AHE3/52T.
What is the maximum clamping voltage of TPSMB33AHE3/52T under surge conditions?
The TPSMB33AHE3/52T exhibits a maximum clamping voltage (VC) of 45.7 V when subjected to a 10/1000 μs surge waveform at peak pulse current IPPM = 13.1 A. This value is measured per standard test conditions and defines the upper voltage limit imposed on protected circuitry during transient events - critical for ensuring downstream IC survival.
Does TPSMB33AHE3/52T support lead-free reflow assembly?
Yes, the TPSMB33AHE3/52T meets MSL Level 1 per J-STD-020 and supports lead-free reflow with a maximum peak temperature of 260 °C. Its matte tin-plated leads are solderable per J-STD-002 and JESD 22-B102, and the molding compound complies with UL 94 V-0 flammability rating - fully compatible with modern SMT processes.
What is the polarity configuration of TPSMB33AHE3/52T?
The TPSMB33AHE3/52T is unidirectional only, with cathode identified by a color band. It functions as a reverse-biased avalanche diode during normal operation and conducts surge current from anode to cathode when VWM is exceeded. This polarity must be observed in PCB layout to ensure proper protection function - the TPSMB33AHE3/52T does not support bidirectional operation.
TPSMB33AHE3/52T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 28.2V
- Voltage - Breakdown (Min):
- 31.4V
- Voltage - Clamping (Max) @ Ipp:
- 45.7V
- Current - Peak Pulse (10/1000µs):
- 13.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
TPSMB33AHE3/52T FAQ
1.How can I place an order for TPSMB33AHE3/52T through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMB33AHE3/52T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMB33AHE3/52T reliable?
The price and inventory of TPSMB33AHE3/52T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMB33AHE3/52T is usually 5 days.
3.What payment methods are accepted for TPSMB33AHE3/52T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMB33AHE3/52T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMB33AHE3/52T?
TPSMB33AHE3/52T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMB33AHE3/52T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMB33AHE3/52T?
For technical support, including TPSMB33AHE3/52T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMB33AHE3/52T requirements.
6.How does Aetrix verify that TPSMB33AHE3/52T is sourced from the original manufacturer or authorized distributors?
All TPSMB33AHE3/52T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMB33AHE3/52T meets industry standards.
7.What is the process for return or replacement of TPSMB33AHE3/52T?
All TPSMB33AHE3/52T units undergo pre-shipment inspection (PSI). If there is an issue with TPSMB33AHE3/52T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMB33AHE3/52T part is unused and in its original packaging.
Return procedure for TPSMB33AHE3/52T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMB33AHE3/52T Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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