Vishay General Semiconductor - Diodes Division TPSMB36AHE3/5BT
- Part No.:
- TPSMB36AHE3/5BT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
TPSMB36AHE3/5BT.pdf
- Description:
- TVS DIODE 30.8VWM 49.9VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
TPSMB36AHE3/5BT from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) diode designed for clamping inductive switching transients and lightning-induced surges on power rails and signal lines. It features a 36 V breakdown voltage (VBR = 34.2–37.8 V at IT = 1 mA), 30.8 V stand-off voltage (VWM), 49.9 V maximum clamping voltage (VC) at 12 A peak pulse current, 600 W peak pulse power (10/1000 µs), and operates up to +185 °C junction temperature.
For engineers reviewing the TPSMB36AHE3/5BT datasheet, TPSMB36AHE3/5BT pinout, TPSMB36AHE3/5BT application, or TPSMB36AHE3/5BT equivalent, this page delivers verified electrical specs, SMB (DO-214AA) package details, AEC-Q101 qualification status, thermal derating curves, and direct alternatives for automotive power rail protection, industrial sensor interface hardening, and telecom surge suppression.
Technical Context
The TPSMB36AHE3/5BT employs passivated anisotropic rectifier technology optimized for high-reliability transient suppression. Its unidirectional polarity enables forward-biased conduction during overvoltage events while maintaining low leakage (<1 µA at VWM) under normal operation, with a typical VBR temperature coefficient of +0.090 %/°C.
It is rated for 75 A non-repetitive forward surge current (8.3 ms half-sine), exhibits very fast response time (<1 ns), and achieves low incremental surge resistance - critical for limiting let-through energy during ESD and load-dump events in 12 V and 24 V systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 34.2 / 36.0 / 37.8 V at 1 mA - defines precise clamping onset threshold for 30–36 V nominal systems |
| VWM | 30.8 V - maximum continuous reverse operating voltage before leakage exceeds 1 µA |
| VC @ IPPM | 49.9 V at 12 A - limits peak let-through voltage during 600 W transient, protecting downstream 50 V-rated components |
| PPPM | 600 W (10/1000 µs) - sustains high-energy transients common in automotive load-dump and industrial relay switching |
| TJ max. | +185 °C - supports under-hood and high-temperature industrial environments without derating loss |
| Polarity | Unidirectional - provides robust forward conduction path for negative-going transients on positive rails |
| MSL Level | Level 1 (J-STD-020) - allows unlimited floor life and reflow up to 260 °C peak, simplifying SMT assembly |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, cathode indicated by molded band. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); terminals are matte tin-plated, solderable per J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink node | Connected to protected line (e.g., 12 V rail); conducts surge current to ground when VLINE exceeds VBR |
| Anode | Reference/ground return | Typically tied to system ground plane; completes clamping path with minimal inductance for sub-ns response |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation optimized design | Enables stable VBR and low leakage over 1000+ hours at 150 °C, critical for automotive long-life requirements |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock per AEC standard |
| 600 W peak pulse power (10/1000 µs) | Withstands ISO 7637-2 Pulse 5a (load dump) and IEC 61000-4-5 Level 3 surges without degradation |
| Low incremental surge resistance | Minimizes VC overshoot and improves clamping precision under high di/dt conditions |
| MSL Level 1, 260 °C peak reflow | Eliminates moisture sensitivity concerns and enables single-pass lead-free reflow without baking |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Hardening |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs against load-dump transients (ISO 7637-2 Pulse 5a) and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between power input and chassis ground to clamp overvoltage spikes before they reach LDOs or microcontrollers. Use Value: Limits peak voltage to ≤49.9 V, ensuring survival of 50 V-rated input capacitors and PMICs under 120 V/100 ms load-dump stress. | Use Scenario: Shielding analog sensor outputs (e.g., pressure, temperature) in factory automation PLC modules from EFT and surge coupling. IC Role / Device Role / Timing Role: Low-leakage TVS placed across differential signal pair (e.g., RS-485 bus lines) to shunt fast transients without distorting DC bias. Use Value: Sub-1 µA leakage at 30.8 V preserves signal integrity; 12 A IPPM handles 4 kV EFT bursts per IEC 61000-4-4. |
| Telecom Line Surge Suppression | Consumer Power Adapter Input Protection |
Use Scenario: Safeguarding PoE-powered equipment front-end circuitry from lightning-induced surges on Ethernet cables (IEC 61000-4-5). IC Role / Device Role / Timing Role: Primary clamping device on DC input side of isolated DC/DC converter, coordinated with gas discharge tube (GDT) for staged protection. Use Value: Fast <1 ns response captures initial surge edge; 49.9 V clamping prevents breakdown of 60 V-rated MOSFETs and optocouplers in isolation barrier. | Use Scenario: Preventing failure of AC-DC adapter primary-side rectifiers and controllers due to mains-borne surges (IEC 61000-4-5 Level 2). IC Role / Device Role / Timing Role: Secondary-level TVS on DC output rail (e.g., 36 V output) to absorb residual transients escaping primary MOV suppression. Use Value: Matches 36 V nominal output with 30.8 V VWM, enabling reliable hold-off during brownout; RoHS-compliant HE3 suffix meets global regulatory requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ36A (ON Semiconductor) | Same SMB package, 36 V VBR, but lower PPPM = 600 W (same rating), higher VC = 58.1 V at 10.3 A; not AEC-Q101 qualified | Lacks automotive qualification; suitable for industrial/commercial only where AEC-Q101 is not mandated | Select if cost-sensitive and automotive qualification is unnecessary; verify VC margin against downstream component ratings. |
| SMCJ36A (Littelfuse) | Higher-power SMC (DO-214AB) package, same VBR/VWM, PPPM = 1500 W, VC = 58.1 V at 25.8 A; AEC-Q101 available (SMCJ36AQ) | Requires larger PCB footprint; used where higher surge energy handling is required beyond 600 W | Choose when system-level testing reveals 600 W insufficient; confirm layout space and thermal management for SMC package. |
Compared with SMBJ36A and SMCJ36A, the TPSMB36AHE3/5BT offers AEC-Q101 qualification in the compact SMB footprint with the lowest clamping voltage (49.9 V) among 36 V-class devices, making it optimal for space-constrained automotive modules requiring tight voltage margins.
Availability
TPSMB36AHE3/5BT is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, and telecom power supply designs requiring stable component supply, AEC-Q101 compliance, and high-temperature operational reliability.
Supply support for TPSMB36AHE3/5BT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS, MOSFETs, and optoelectronics with emphasis on reliability, power efficiency, and rugged packaging.
The TPSMB series belongs to Vishay's PAR® (Protected Anisotropic Rectifier) transient suppressor product line, engineered specifically for high-temperature stability and automotive-grade surge immunity in harsh-environment power and signal line protection.
FAQ
What is the maximum clamping voltage of the TPSMB36AHE3/5BT and under what test condition?
The TPSMB36AHE3/5BT has a maximum clamping voltage (VC) of 49.9 V, measured at a peak pulse current (IPPM) of 12 A using the standardized 10/1000 µs double-exponential waveform. This value ensures downstream 50 V-rated components remain within safe operating limits during transient events, and is confirmed in Vishay's datasheet Document Number 88406, page 2.
Is the TPSMB36AHE3/5BT qualified for automotive applications?
Yes, the TPSMB36AHE3/5BT is AEC-Q101 qualified, as indicated by the "HE3" suffix in its ordering code. It meets the full stress-test requirements for automotive use-including temperature cycling, high-temperature operating life, and mechanical shock-making it suitable for engine control, body electronics, and ADAS power rail protection per Vishay's qualification report referenced in datasheet 88406.
What does the "HE3" suffix signify in TPSMB36AHE3/5BT?
"HE3" denotes a RoHS-compliant, AEC-Q101 qualified variant in Vishay's TPSMB series, with matte tin-plated leads, JESD 201 Class 2 whisker resistance, and MSL Level 1 moisture sensitivity rating. The "5BT" portion indicates tape-and-reel packaging in 7" diameter reels with 750 units per reel, per Vishay's ordering information table on page 3 of document 88406.
How does the TPSMB36AHE3/5BT compare to bidirectional TVS diodes in surge protection?
The TPSMB36AHE3/5BT is unidirectional and optimized for clamping positive transients on DC power lines (e.g., 12 V or 24 V rails), offering lower leakage (<1 µA at VWM) and tighter VBR tolerance than equivalent bidirectional parts. Bidirectional variants would be needed only for AC-coupled or floating signal lines; for fixed-polarity rails, the TPSMB36AHE3/5BT delivers superior DC performance and thermal stability.
What is the thermal derating behavior of the TPSMB36AHE3/5BT above 25 °C ambient?
The TPSMB36AHE3/5BT follows linear derating above TA = 25 °C, with peak pulse power (PPPM) reduced per Figure 2 in Vishay's datasheet 88406: at 100 °C ambient, PPPM drops to ~50 % of rated 600 W; at 150 °C, it falls to ~25 %. This reflects its 185 °C maximum junction temperature rating and enables accurate system-level thermal margining in under-hood or enclosed industrial environments.
TPSMB36AHE3/5BT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30.8V
- Voltage - Breakdown (Min):
- 34.2V
- Voltage - Clamping (Max) @ Ipp:
- 49.9V
- Current - Peak Pulse (10/1000µs):
- 12A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
TPSMB36AHE3/5BT FAQ
1.How can I place an order for TPSMB36AHE3/5BT through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMB36AHE3/5BT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMB36AHE3/5BT reliable?
The price and inventory of TPSMB36AHE3/5BT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMB36AHE3/5BT is usually 5 days.
3.What payment methods are accepted for TPSMB36AHE3/5BT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMB36AHE3/5BT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMB36AHE3/5BT?
TPSMB36AHE3/5BT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMB36AHE3/5BT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMB36AHE3/5BT?
For technical support, including TPSMB36AHE3/5BT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMB36AHE3/5BT requirements.
6.How does Aetrix verify that TPSMB36AHE3/5BT is sourced from the original manufacturer or authorized distributors?
All TPSMB36AHE3/5BT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMB36AHE3/5BT meets industry standards.
7.What is the process for return or replacement of TPSMB36AHE3/5BT?
All TPSMB36AHE3/5BT units undergo pre-shipment inspection (PSI). If there is an issue with TPSMB36AHE3/5BT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMB36AHE3/5BT part is unused and in its original packaging.
Return procedure for TPSMB36AHE3/5BT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMB36AHE3/5BT Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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