Vishay General Semiconductor - Diodes Division TPSMB43AHE3_A/I
- Part No.:
- TPSMB43AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
TPSMB43AHE3_A/I.pdf
- Description:
- TVS DIODE 36.8VWM 59.3VC DO214AA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
TPSMB43AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) diode designed for clamping inductive and lightning-induced transients on power rails and signal lines. It features a 43 V breakdown voltage (VBR), 36.8 V stand-off voltage (VWM), 600 W peak pulse power (10/1000 µs), 10.1 A peak pulse current (IPPM), and 59.3 V clamping voltage (VC) - used in automotive power supply protection, industrial sensor interfaces, and telecom DC input stages.
For engineers reviewing the TPSMB43AHE3_A/I datasheet, TPSMB43AHE3_A/I pinout, TPSMB43AHE3_A/I application, or TPSMB43AHE3_A/I equivalent, this page delivers verified electrical parameters, SMB (DO-214AA) package mapping, cathode/anode terminal roles, AEC-Q101 qualification status, and design-meaningful clamping performance data for ESD/surge co-design.
Technical Context
The TPSMB43AHE3_A/I operates as a unidirectional avalanche diode with passivated anisotropic rectifier technology, enabling stable clamping under repetitive surge conditions up to 0.01% duty cycle. Its 185 °C maximum junction temperature and MSL Level 1 rating support high-reliability automotive and industrial PCB assembly environments.
It delivers low incremental surge resistance and fast response time (<1 ns) to limit transient overvoltage before downstream ICs or MOSFETs are damaged. The device is not bidirectional and requires correct polarity placement - cathode marked by band - with no internal series impedance or integrated filtering.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 40.9 / 43.0 / 45.2 V - defines minimum voltage at which avalanche conduction begins reliably at 1 mA test current |
| VWM | 36.8 V - maximum continuous reverse operating voltage before leakage exceeds 1 µA at 25 °C |
| VC @ IPPM | 59.3 V - clamped voltage during 10.1 A 10/1000 µs surge, limiting stress on protected circuitry |
| PPPM | 600 W - peak transient power dissipation capability under standardized waveform, derated above 25 °C |
| IFSM | 75 A - maximum non-repetitive forward surge current (8.3 ms half-sine), relevant for inrush or fault-current events |
| TJ max. | +185 °C - enables operation in under-hood automotive or high-ambient industrial enclosures without thermal shutdown |
| αT | 0.092 %/°C - temperature coefficient of VBR, used to calculate breakdown shift across operating range |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, matte tin-plated leads, RoHS-compliant and AEC-Q101 qualified (HE3 suffix). Cathode identified by molded band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink node | Connected to protected line; conducts surge current to ground when VWM exceeded |
| Anode | Reference/return path | Typically tied to system ground or low-impedance return plane; completes clamping loop |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation optimized design | Enables stable 185 °C operation and long-term reliability under thermal cycling in automotive ECUs |
| 600 W peak pulse power (10/1000 µs) | Supports IEC 61000-4-5 Level 4 (4 kV) surge immunity when properly laid out with low-inductance grounding |
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive-grade production use including temperature cycling, HTRB, and AC-H3TRB stress tests |
| MSL Level 1, peak reflow 260 °C | Permits single-pass lead-free reflow without moisture-related popcorn failure or delamination |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients, improving protection margin for 3.3 V or 5 V logic |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Clamping |
|---|---|
Use Scenario: Protecting 12 V battery-fed microcontroller power inputs against load-dump transients (ISO 7637-2 Pulse 5a) and alternator ripple. IC Role / Device Role: Unidirectional TVS placed between VIN and GND, upstream of LDO or DC/DC converter. Use Value: Clamps to ≤59.3 V during 10.1 A surges, preventing damage to 40 V-rated input stages while maintaining AEC-Q101 compliance. | Use Scenario: Safeguarding analog outputs (e.g., 4–20 mA transmitter lines) from ESD and field-wiring induced transients in factory automation. IC Role / Device Role: Low-capacitance TVS on signal path, grounded at controller side to shunt energy away from ADC or op-amp inputs. Use Value: 36.8 V stand-off ensures no interference during normal 24 V loop operation; 59.3 V clamping protects 36 V absolute-maximum-rated receivers. |
| Telecom DC Input Surge Suppression | Consumer Device USB Power Port Protection |
Use Scenario: Front-end protection of PoE-powered equipment (e.g., IP cameras) against lightning-induced surges on 48 V DC input. IC Role / Device Role: Primary clamping device in series with fuse and common-mode choke on DC input rail. Use Value: 600 W rating handles IEC 61000-4-5 combination wave (1.2/50 µs + 8/20 µs) surges; SMB footprint allows compact layout near connector. | Use Scenario: Secondary-level overvoltage protection on USB-C VBUS lines in portable speakers or docking stations exposed to adapter faults. IC Role / Device Role: Standoff-clamp TVS between VBUS and GND, placed after EMI filter but before USB PD controller. Use Value: 36.8 V VWM avoids false triggering during 20 V PD negotiation; 59.3 V VC limits stress on 28 V-rated port switches. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ43AHE3_A/I | Same SMB package, identical VBR/VC specs, but lower 400 W PPPM rating | Not suitable for IEC 61000-4-5 Level 4; limited to Level 3 or lower-energy transients | Select only if system-level surge testing requirements are ≤400 W |
| TPSMB43AHM3_A/I | Halogen-free variant with identical electrical specs and AEC-Q101 qualification | Required for RoHS + halogen-free compliance mandates (e.g., EU automotive Tier 1 programs) | Choose HM3 when material compliance exceeds standard RoHS requirements |
Compared with SMBJ43AHE3_A/I, the TPSMB43AHE3_A/I provides 50% higher surge power handling for robust front-end protection; versus TPSMB43AHM3_A/I, it offers identical performance with standard RoHS compliance - making it optimal for cost-sensitive automotive and industrial designs where halogen-free is not mandated.
Availability
TPSMB43AHE3_A/I is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface hardening, and telecom DC input surge suppression requiring stable component supply, AEC-Q101 qualification, and high-temperature reliability.
Supply support for TPSMB43AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and high-temperature performance.
The TPSMB series belongs to Vishay's PAR® (Protected Avalanche Rectifier) transient suppressor product line, engineered specifically for high-energy surge immunity in automotive, industrial, and telecom infrastructure where sustained 185 °C operation and AEC-Q101 validation are mandatory.
FAQ
What is the maximum clamping voltage of the TPSMB43AHE3_A/I under a 10/1000 µs surge?
The TPSMB43AHE3_A/I has a maximum clamping voltage (VC) of 59.3 V when subjected to its rated peak pulse current of 10.1 A using the 10/1000 µs waveform. This value is measured per JEDEC standards and reflects worst-case voltage seen by downstream components during surge events. The TPSMB43AHE3_A/I maintains this clamping performance across its full operating temperature range, with minor variation compensated via its 0.092 %/°C VBR temperature coefficient.
Is the TPSMB43AHE3_A/I AEC-Q101 qualified?
Yes, the TPSMB43AHE3_A/I is AEC-Q101 qualified. The "HE3" suffix explicitly denotes Vishay's AEC-Q101-compliant version, validated for automotive applications including temperature cycling, high-temperature reverse bias, and accelerated life testing. This qualification applies to the full TPSMB43AHE3_A/I device - not just the base TPSMB43A - and covers both the SMB package construction and silicon die process.
What does the "_A/I" suffix mean in TPSMB43AHE3_A/I?
The "_A/I" suffix in TPSMB43AHE3_A/I indicates two attributes: "A" denotes the revision level (Revision A per Vishay document 88406), and "I" specifies the packaging format - 13-inch diameter plastic tape and reel, with a base quantity of 3200 units. This differs from the "H" variant (7-inch reel, 750 units). Both "H" and "I" variants share identical electrical and thermal specifications for the TPSMB43AHE3_A/I device.
Can the TPSMB43AHE3_A/I be used in bidirectional applications?
No, the TPSMB43AHE3_A/I is unidirectional only. Its electrical characteristics - including breakdown voltage, clamping behavior, and leakage profile - are specified exclusively for reverse-biased operation (cathode positive relative to anode). For bidirectional transient suppression, Vishay offers separate part numbers such as the TPSMB43CAHE3_A/I. Using the TPSMB43AHE3_A/I in bidirectional configurations risks incomplete clamping and potential device failure during positive-going transients.
What is the thermal derating behavior of the TPSMB43AHE3_A/I above 25 °C ambient?
The TPSMB43AHE3_A/I follows Vishay's standard derating curve (Fig. 2 in document 88406): peak pulse power decreases linearly from 100% at 25 °C to ~50% at 125 °C, reaching zero at 185 °C junction temperature. Derating is based on initial junction temperature, not ambient alone; board layout (copper pad area, thermal vias) directly impacts achievable power handling. The TPSMB43AHE3_A/I's 185 °C TJmax enables operation in high-ambient environments when thermally anchored per recommended 0.2" × 0.2" copper pads.
TPSMB43AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 36.8V
- Voltage - Breakdown (Min):
- 40.9V
- Voltage - Clamping (Max) @ Ipp:
- 59.3V
- Current - Peak Pulse (10/1000µs):
- 10.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
TPSMB43AHE3_A/I FAQ
1.How can I place an order for TPSMB43AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMB43AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMB43AHE3_A/I reliable?
The price and inventory of TPSMB43AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMB43AHE3_A/I is usually 5 days.
3.What payment methods are accepted for TPSMB43AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMB43AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMB43AHE3_A/I?
TPSMB43AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMB43AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMB43AHE3_A/I?
For technical support, including TPSMB43AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMB43AHE3_A/I requirements.
6.How does Aetrix verify that TPSMB43AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All TPSMB43AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMB43AHE3_A/I meets industry standards.
7.What is the process for return or replacement of TPSMB43AHE3_A/I?
All TPSMB43AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with TPSMB43AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMB43AHE3_A/I part is unused and in its original packaging.
Return procedure for TPSMB43AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMB43AHE3_A/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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onsemi

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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