Vishay General Semiconductor - Diodes Division TPSMB8.2AHE3_A/I
- Part No.:
- TPSMB8.2AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
TPSMB8.2AHE3_A/I.pdf
- Description:
- TVS DIODE 7.02VWM 12.1VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:3,597
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Product details
Overview
TPSMB8.2AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for clamping inductive-switching and lightning-induced transients on power rails and signal lines. It features 8.2 V breakdown voltage (VBR), 7.02 V stand-off voltage (VWM), 600 W peak pulse power (10/1000 µs), 49.6 V clamping voltage at 49.6 A peak surge current, and operates up to +185 °C junction temperature.
For engineers reviewing the TPSMB8.2AHE3_A/I datasheet, TPSMB8.2AHE3_A/I pinout, TPSMB8.2AHE3_A/I application, or TPSMB8.2AHE3_A/I equivalent, this device serves as a high-reliability, AEC-Q101-qualified protection element for automotive power supplies, industrial sensor interfaces, and telecom DC input stages where stable clamping and low leakage (<100 µA at VWM) are critical.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to deliver stable breakdown behavior across temperature and high surge robustness. Its unidirectional polarity and SMB (DO-214AA) package support integration into compact PCB layouts with minimal parasitic inductance.
The device meets MSL Level 1 per J-STD-020 (260 °C peak reflow), supports 75 A non-repetitive forward surge current (8.3 ms half-sine), and exhibits a low 0.056 %/°C temperature coefficient of VBR, ensuring predictable clamping over -65 °C to +185 °C operating range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 7.79 / 8.20 / 8.61 V - precise breakdown threshold ensures reliable triggering before downstream IC damage |
| VWM | 7.02 V - maximum continuous reverse voltage without significant leakage, enabling safe operation on 5 V–6 V rails |
| IR @ VWM | 100 µA - low leakage preserves battery life and avoids false triggers in low-power sensor circuits |
| VC @ IPPM | 49.6 V - clamping voltage at rated 49.6 A surge limits stress on protected MOSFETs or regulators |
| PPPM | 600 W - peak pulse power handling capability under 10/1000 µs waveform meets IEC 61000-4-5 Level 3/4 requirements |
| TJ max | +185 °C - extended junction temperature rating supports under-hood automotive and high-ambient industrial use |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, cathode indicated by molded band. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H). Matte tin-plated leads, RoHS-compliant, JESD 201 Class 2 whisker tested.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts surge current to ground when VWM exceeded |
| Anode | Reference node | Typically tied to system ground or low-impedance return path; completes clamping loop |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation | Optimized anisotropic rectifier design improves long-term stability and reduces parameter drift under thermal cycling |
| MSL Level 1 rating | Enables single-reflow assembly without moisture sensitivity concerns; compatible with standard SMT processes |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients, enhancing protection margin for sensitive gate drivers |
| 10/1000 µs waveform compliance | Validated for industrial surge immunity standards including IEC 61000-4-5 and ISO 7637-2 Pulse 1/2a/5a |
| RoHS + halogen-free option | HE3 suffix denotes RoHS-compliant construction; HM3 variant adds halogen-free molding compound for strict environmental compliance |
Applications
| Automotive Power Input Protection | Industrial Sensor Signal Line Clamp |
|---|---|
|
Use Scenario: Protecting 12 V battery-fed ECUs against load dump and alternator transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp surges above 13.5 V. Use Value: Withstands 75 A 8.3 ms surge and maintains <100 µA leakage at 7.02 V, preserving quiescent current budget in always-on modules. |
Use Scenario: Shielding analog outputs of pressure/temperature sensors from ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-capacitance TVS connected between signal line and ground to limit voltage excursion without distorting mV-level signals. Use Value: Clamps to 49.6 V at 49.6 A while adding <10 pF capacitance, avoiding bandwidth degradation in 10 kHz sensor bandwidths. |
| Telecom DC Power Entry | Consumer USB-C Port Surge Guard |
|
Use Scenario: Safeguarding PoE-powered equipment inputs against induced surges on outdoor Ethernet runs. IC Role / Device Role / Timing Role: Primary clamping device on 48 V DC input, coordinated with upstream GDT or MOV for staged protection. Use Value: 600 W peak power rating and +185 °C TJ rating ensure sustained operation in sealed outdoor enclosures with limited airflow. |
Use Scenario: Adding secondary-level surge suppression on VBUS lines of USB-C receptacles in portable devices. IC Role / Device Role / Timing Role: Fast-response TVS placed after primary fuse and before USB PD controller to absorb contact-mode ESD. Use Value: Sub-1 ns response time and 0.056 %/°C VBR TC guarantee consistent clamping across device temperature range (–20 °C to +70 °C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ8.0A | Lower VBR (7.62–8.42 V), same SMB package, 400 W PPPM, no AEC-Q101 qualification | Rated for commercial/industrial use only; not validated for automotive temperature cycling or humidity testing | Select when cost sensitivity outweighs automotive qualification and 600 W surge headroom is unnecessary |
| TPSMB8.2AHM3_A/I | Identical electrical specs; halogen-free molding compound, same AEC-Q101 qualification, identical thermal and mechanical performance | No functional difference; chosen only when halogen-free compliance is mandated by OEM or regional regulation (e.g., China RoHS II) | Prefer TPSMB8.2AHM3_A/I if halogen-free materials are required; otherwise TPSMB8.2AHE3_A/I offers full specification compliance at lower material cost |
Compared with SMAJ8.0A and TPSMB8.2AHM3_A/I, the TPSMB8.2AHE3_A/I delivers certified automotive reliability and 50 % higher peak power than SMAJ8.0A, while offering identical protection performance to TPSMB8.2AHM3_A/I except for halogen content-making it optimal for cost-sensitive AEC-Q101 applications without halogen restrictions.
Availability
TPSMB8.2AHE3_A/I is available at Aetrix Electronics and suitable for automotive body control modules, industrial PLC I/O terminals, and telecom power entry designs requiring stable component supply, AEC-Q101 validation, and high-temperature surge resilience.
Supply support for TPSMB8.2AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, rectifiers, and protection devices for demanding environments.
The TPSMB series belongs to Vishay's PAR® transient voltage suppressor product line, engineered specifically for automotive and industrial systems needing robust, temperature-stable clamping with AEC-Q101 certification and high surge endurance.
FAQ
What is the exact breakdown voltage tolerance for TPSMB8.2AHE3_A/I?
The TPSMB8.2AHE3_A/I has a guaranteed breakdown voltage range of 7.79 V (min) to 8.61 V (max) at 10 mA test current, with a typical value of 8.20 V. This ±5 % tolerance is specified per the Vishay datasheet revision 23-Jan-2024 (Document Number: 88406) and applies at TA = 25 °C. The device's 0.056 %/°C temperature coefficient allows accurate VBR prediction across its full –65 °C to +185 °C operating range.
Is TPSMB8.2AHE3_A/I suitable for bidirectional transient protection?
No, the TPSMB8.2AHE3_A/I is unidirectional only, as confirmed in the Vishay datasheet under "FEATURES" and "PRIMARY CHARACTERISTICS". It must be installed with the cathode band toward the protected line and anode to ground. For bidirectional protection, a separate device such as the SMBJ8.0CA or equivalent dual-diode configuration is required-TPSMB8.2AHE3_A/I does not provide symmetrical clamping.
Does TPSMB8.2AHE3_A/I meet automotive qualification standards?
Yes, TPSMB8.2AHE3_A/I is AEC-Q101 qualified, explicitly stated in the Vishay datasheet under "FEATURES" and "ORDERING INFORMATION". The HE3 suffix denotes RoHS-compliant construction with AEC-Q101 qualification, covering tests including HTGB, HTRB, temperature cycling, and ESD. This makes TPSMB8.2AHE3_A/I appropriate for automotive powertrain, chassis, and body electronics per industry requirements.
What is the maximum clamping voltage of TPSMB8.2AHE3_A/I at its rated surge current?
The maximum clamping voltage (VC) of TPSMB8.2AHE3_A/I is 49.6 V at its rated peak pulse current (IPPM) of 49.6 A, measured using the 10/1000 µs waveform. This value is specified in the "ELECTRICAL CHARACTERISTICS" table of the Vishay datasheet and defines the upper voltage limit imposed on the protected circuit during worst-case surge events.
How does the thermal performance of TPSMB8.2AHE3_A/I compare to standard SMB TVS diodes?
TPSMB8.2AHE3_A/I supports a maximum junction temperature of +185 °C-significantly higher than standard SMB TVS diodes rated to +150 °C or +175 °C. This extended rating stems from Vishay's optimized junction passivation and thermal design, enabling reliable operation in under-hood automotive locations and sealed industrial enclosures where ambient temperatures exceed 125 °C.
TPSMB8.2AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.02V
- Voltage - Breakdown (Min):
- 7.79V
- Voltage - Clamping (Max) @ Ipp:
- 12.1V
- Current - Peak Pulse (10/1000µs):
- 49.6A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
TPSMB8.2AHE3_A/I FAQ
1.How can I place an order for TPSMB8.2AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMB8.2AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMB8.2AHE3_A/I reliable?
The price and inventory of TPSMB8.2AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMB8.2AHE3_A/I is usually 5 days.
3.What payment methods are accepted for TPSMB8.2AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMB8.2AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMB8.2AHE3_A/I?
TPSMB8.2AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMB8.2AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMB8.2AHE3_A/I?
For technical support, including TPSMB8.2AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMB8.2AHE3_A/I requirements.
6.How does Aetrix verify that TPSMB8.2AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All TPSMB8.2AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMB8.2AHE3_A/I meets industry standards.
7.What is the process for return or replacement of TPSMB8.2AHE3_A/I?
All TPSMB8.2AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with TPSMB8.2AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMB8.2AHE3_A/I part is unused and in its original packaging.
Return procedure for TPSMB8.2AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMB8.2AHE3_A/I Tags

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onsemi

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DESD3V3E1BL-7B
Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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ESD5Z5.0T1G
onsemi

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DESD5V0U1BB-7
Diodes Incorporated

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D12V0L1B2LP-7B
Diodes Incorporated

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PESD2V0Y1BSFYL
Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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