My Inquiry
My Account
Vishay General Semiconductor - Diodes Division TPSMB9.1AHE3/52T
;;2.jpg)
- Part No.:
- TPSMB9.1AHE3/52T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
TPSMB9.1AHE3/52T.pdf
- Description:
- TVS DIODE 7.78VWM 13.4VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:4,749
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TPSMB9.1AHE3/52T from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for clamping inductive switching surges and lightning-induced transients on power rails and signal lines. It features a 9.1 V breakdown voltage (VBR), 7.78 V stand-off voltage (VWM), 600 W peak pulse power (10/1000 µs), 44.8 V clamping voltage at 13.4 A peak current, and operates up to +185 °C junction temperature - deployed in automotive power supply protection and industrial sensor interface circuits.
For engineers reviewing the TPSMB9.1AHE3/52T datasheet, TPSMB9.1AHE3/52T pinout, TPSMB9.1AHE3/52T application, or TPSMB9.1AHE3/52T equivalent, this page delivers verified electrical parameters, SMB (DO-214AA) package mapping, cathode/anode terminal roles, AEC-Q101 qualification status, and real-world design implications for surge immunity validation and layout-aware PCB placement.
Technical Context
The TPSMB9.1AHE3/52T uses passivated anisotropic rectifier technology to achieve low incremental surge resistance and excellent clamping linearity under repetitive 10/1000 µs transients. Its unidirectional polarity and 0.060 %/°C VBR temperature coefficient enable stable overvoltage protection across -65 °C to +185 °C operating range.
Designed for high-reliability environments, it meets MSL Level 1 per J-STD-020 with 260 °C reflow peak, supports 75 A non-repetitive forward surge (8.3 ms half-sine), and delivers <3.5 V forward voltage at 50 A - critical for minimizing conduction loss during fault conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 8.65 / 9.10 / 9.55 V - defines precise clamping initiation threshold at 1 mA test current; ensures reliable turn-on before downstream IC damage. |
| VWM | 7.78 V - maximum continuous reverse working voltage; sets safe DC operating margin below breakdown. |
| VC @ IPPM | 44.8 V at 13.4 A - peak clamped voltage during 600 W transient; determines protected circuit's maximum stress level. |
| PPPM | 600 W (10/1000 µs) - standardized surge energy handling capacity; validates compliance with IEC 61000-4-5 Level 3/4. |
| TJ max. | +185 °C - enables operation in under-hood automotive and high-temperature industrial enclosures without derating. |
| IR @ VWM | 25 µA - low leakage at stand-off voltage; preserves battery life in always-on systems and avoids false triggering. |
| αT | 0.060 %/°C - quantifies VBR drift with temperature; allows accurate clamping prediction across thermal extremes. |
Pinout & Package
Package: SMB (DO-214AA) - surface-mount plastic case with matte tin-plated leads, UL 94 V-0 rated molding compound, and cathode band marking. Dimensions: 3.94 mm × 2.20 mm × 1.52 mm (L × W × H); mounted on 5.0 mm × 5.0 mm copper pads per terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink node | Connected to protected line; conducts surge current to ground when VIN exceeds VBR. |
| Anode | Reference/return path | Typically tied to system ground or low-impedance return; completes clamping loop during overvoltage events. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock - required for engine control, ADAS, and body electronics. |
| 185 °C junction rating | Enables direct placement near heat sources (e.g., power MOSFETs, DC-DC converters) without thermal derating or heatsinking. |
| 600 W peak pulse power | Withstands IEC 61000-4-5 combination wave surges (e.g., 2 Ω source impedance, 40 A) without degradation over lifetime. |
| Low clamping ratio (VC/VBR ≈ 4.9) | Minimizes voltage overshoot during fast transients - critical for protecting 5 V and 3.3 V logic interfaces and analog front-ends. |
| MSL Level 1 moisture sensitivity | Allows unlimited floor life and standard reflow profile (260 °C peak) without baking - simplifies SMT manufacturing and reduces yield risk. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Clamping |
|---|---|
Use Scenario: Suppressing load-dump transients (up to 35 V, 100 ms) and alternator ripple spikes on 12 V battery-fed ECUs. IC Role / Device Role / Timing Role: Primary overvoltage clamp placed between battery input and DC-DC converter input stage. Use Value: Limits voltage seen by downstream LDOs and microcontrollers to ≤44.8 V, preventing latch-up and gate oxide rupture. | Use Scenario: Protecting 4–20 mA current-loop transmitters and RS-485 nodes from ESD and cable discharge events. IC Role / Device Role / Timing Role: Unidirectional TVS shunting surge energy away from precision op-amps and communication ICs. Use Value: Maintains signal integrity with <25 µA leakage at 7.78 V, avoiding offset errors in µA-level analog circuits. |
| Consumer Device USB Port Surge Suppression | Telecom Equipment AC/DC Input Stage Protection |
Use Scenario: Guarding USB VBUS lines against hot-plug inrush and nearby ESD events in portable chargers and docking stations. IC Role / Device Role / Timing Role: Fast-response (sub-nanosecond) clamping device placed immediately after connector. Use Value: Responds within <1 ns to clamp 8 kV contact ESD (IEC 61000-4-2) to <45 V, preserving USB PHY functionality. | Use Scenario: Absorbing induced surges on telecom AC mains inputs subjected to lightning-induced ring waves (IEC 61000-4-5). IC Role / Device Role / Timing Role: Secondary surge suppression stage following MOVs, handling residual fast-rising edges. Use Value: Provides low-clamp, low-capacitance (<100 pF) protection that avoids interfering with 50/60 Hz rectification and filtering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ9.0A | VBR = 9.0 V min, VC = 14.4 V @ 41.7 A; same SMB package but lower clamping voltage and higher IPPM. | Better suited for tighter clamping margins where peak current exceeds 13.4 A; not AEC-Q101 qualified. | Select SMBJ9.0A only if automotive qualification is unnecessary and lower VC is prioritized over temperature rating. |
| TPSMB9.1AHM3/52T | Identical electrical specs; halogen-free construction and enhanced whisker resistance (JESD 201 Class 2), same AEC-Q101 qualification. | Required for RoHS+halogen-free compliance mandates in EU automotive Tier 1 supply chains. | Choose TPSMB9.1AHM3/52T when halogen-free material compliance is contractually mandated. |
Compared with SMBJ9.0A and TPSMB9.1AHM3/52T, the TPSMB9.1AHE3/52T offers the optimal balance of AEC-Q101 qualification, 185 °C operation, and cost-effective RoHS compliance - making it preferred for mainstream automotive and industrial designs where halogen content is unrestricted.
Availability
TPSMB9.1AHE3/52T is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface clamping, and consumer USB port surge suppression requiring stable component supply, full traceability, and long-term lifecycle support.
Supply support for TPSMB9.1AHE3/52T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, thermal performance, and application-specific qualification.
The TPSMB series is engineered for high-temperature, high-reliability transient suppression - targeting automotive, industrial, and telecom systems where sustained operation above 150 °C and AEC-Q101 compliance are mandatory.
FAQ
What is the breakdown voltage tolerance of the TPSMB9.1AHE3/52T?
The TPSMB9.1AHE3/52T has a breakdown voltage (VBR) specified at 8.65 V (minimum), 9.10 V (typical), and 9.55 V (maximum) when tested at 1 mA. This ±5.5% tolerance ensures consistent clamping behavior across production lots while allowing margin for thermal drift and aging effects in long-life applications.
Is the TPSMB9.1AHE3/52T suitable for automotive applications?
Yes, the TPSMB9.1AHE3/52T is AEC-Q101 qualified and rated for operation up to +185 °C junction temperature - meeting critical requirements for under-hood and powertrain electronics. Its RoHS-compliant HE3 suffix and MSL Level 1 rating further support automated automotive manufacturing processes.
What is the clamping voltage of the TPSMB9.1AHE3/52T under surge conditions?
The TPSMB9.1AHE3/52T clamps to a maximum of 44.8 V when subjected to its rated peak pulse current of 13.4 A (10/1000 µs waveform). This value is measured per ANSI/IEEE C62.35 standards and defines the upper voltage limit imposed on protected circuits during transient events.
Does the TPSMB9.1AHE3/52T have polarity markings?
Yes, the TPSMB9.1AHE3/52T uses a cathode band marking on the SMB (DO-214AA) package to identify the cathode terminal. This band must be oriented toward the higher-potential side of the protected line - correct polarity is essential for unidirectional clamping functionality.
What is the maximum leakage current of the TPSMB9.1AHE3/52T at its stand-off voltage?
The TPSMB9.1AHE3/52T exhibits a maximum reverse leakage current (IR) of 25 µA at its 7.78 V stand-off voltage (VWM) and 25 °C ambient temperature. At elevated temperatures (e.g., 150 °C), leakage increases to 50 µA - still well within acceptable limits for low-power sensor and battery-backed systems.
TPSMB9.1AHE3/52T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.78V
- Voltage - Breakdown (Min):
- 8.65V
- Voltage - Clamping (Max) @ Ipp:
- 13.4V
- Current - Peak Pulse (10/1000µs):
- 44.8A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMBJ)
TPSMB9.1AHE3/52T FAQ
1.How can I place an order for TPSMB9.1AHE3/52T through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMB9.1AHE3/52T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMB9.1AHE3/52T reliable?
The price and inventory of TPSMB9.1AHE3/52T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMB9.1AHE3/52T is usually 5 days.
3.What payment methods are accepted for TPSMB9.1AHE3/52T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMB9.1AHE3/52T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMB9.1AHE3/52T?
TPSMB9.1AHE3/52T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMB9.1AHE3/52T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMB9.1AHE3/52T?
For technical support, including TPSMB9.1AHE3/52T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMB9.1AHE3/52T requirements.
6.How does Aetrix verify that TPSMB9.1AHE3/52T is sourced from the original manufacturer or authorized distributors?
All TPSMB9.1AHE3/52T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMB9.1AHE3/52T meets industry standards.
7.What is the process for return or replacement of TPSMB9.1AHE3/52T?
All TPSMB9.1AHE3/52T units undergo pre-shipment inspection (PSI). If there is an issue with TPSMB9.1AHE3/52T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMB9.1AHE3/52T part is unused and in its original packaging.
Return procedure for TPSMB9.1AHE3/52T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMB9.1AHE3/52T Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
