Vishay General Semiconductor - Diodes Division TPSMB9.1AHE3_A/H

Overview

TPSMB9.1AHE3_A/H from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for clamping inductive switching surges and lightning-induced transients on power rails and signal lines. It features a 9.1 V breakdown voltage (V_BR), 7.78 V stand-off voltage (V_WM), 600 W peak pulse power (10/1000 µs), 44.8 V clamping voltage at 13.4 A peak surge current, and operates up to +185 °C junction temperature - deployed in automotive sensor protection and industrial power supply input stages.

For engineers reviewing the TPSMB9.1AHE3_A/H datasheet, TPSMB9.1AHE3_A/H pinout, TPSMB9.1AHE3_A/H application, or TPSMB9.1AHE3_A/H equivalent, key selection criteria include unidirectional polarity, SMB (DO-214AA) package compatibility, AEC-Q101 qualification status, TJ = 185 °C thermal rating, and verified clamping performance under 10/1000 µs surge conditions.

Technical Context

This TVS diode uses passivated anisotropic rectifier technology to deliver stable breakdown characteristics across temperature. Its 0.060 %/°C V_BR temperature coefficient ensures predictable clamping behavior from –65 °C to +185 °C, critical for under-hood automotive environments.

The device is rated for 75 A non-repetitive forward surge current (8.3 ms half-sine) and exhibits low incremental surge resistance, enabling effective energy absorption without thermal runaway during repetitive transient events in DC power distribution networks.

Key Specifications

Pinout & Package

TPSMB9.1AHE3_A/H is housed in an SMB (DO-214AA) plastic package with matte tin-plated leads. The cathode is marked by a color band on the body; terminals are solderable per J-STD-002 and JESD 22-B102, and meet JESD 201 Class 2 whisker resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Compared with SMBJ9.0A and SMCJ9.0A, the TPSMB9.1AHE3_A/H offers AEC-Q101 qualification and tighter V_BR tolerance (±5 %) in the compact SMB footprint, making it optimal for space-constrained automotive modules requiring certified reliability - whereas alternatives trade qualification for higher surge current or power rating.

Availability

TPSMB9.1AHE3_A/H is available at Aetrix Electronics and suitable for automotive sensor protection, industrial power input stages, consumer power adapter outputs, and telecom line interface designs requiring stable component supply and long-term lifecycle support.

Supply support for TPSMB9.1AHE3_A/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on high-reliability and automotive-grade solutions.

The TPSMB9.1AHE3_A/H belongs to Vishay's PAR® family of surface-mount TVS diodes engineered specifically for high-temperature stability and AEC-Q101-compliant transient suppression in harsh automotive and industrial environments.

FAQ

What is the breakdown voltage tolerance of the TPSMB9.1AHE3_A/H?

The TPSMB9.1AHE3_A/H has a breakdown voltage (V_BR) range of 8.65 V to 9.55 V at 1 mA test current, representing a ±5 % tolerance around the nominal 9.1 V value. This tight tolerance ensures consistent clamping behavior across production lots and supports reliable design margining in automotive and industrial applications where precise overvoltage thresholds are critical. The TPSMB9.1AHE3_A/H maintains this specification across its full operating temperature range.

Is the TPSMB9.1AHE3_A/H RoHS-compliant and halogen-free?

Yes, the TPSMB9.1AHE3_A/H is RoHS-compliant and halogen-free, as indicated by the "HE3" suffix in its part number. Per Vishay documentation, base P/NHE3_X parts meet RoHS requirements and are qualified to AEC-Q101, while HM3 suffix denotes additional halogen-free compliance. The TPSMB9.1AHE3_A/H satisfies both criteria and carries material compliance per Vishay document 99912.

What is the maximum clamping voltage of the TPSMB9.1AHE3_A/H under surge conditions?

The maximum clamping voltage (V_C) of the TPSMB9.1AHE3_A/H is 44.8 V at a peak pulse current (I_PPM) of 13.4 A, measured using the standard 10/1000 µs waveform. This value defines the upper voltage limit imposed on protected circuitry during transient events and is critical for ensuring downstream components remain within their absolute maximum ratings. The TPSMB9.1AHE3_A/H achieves this clamping performance while sustaining 600 W peak pulse power.

Does the TPSMB9.1AHE3_A/H require derating at elevated ambient temperatures?

Yes, the TPSMB9.1AHE3_A/H must be derated above 25 °C ambient temperature, as specified in Figure 2 of its datasheet. Peak pulse power decreases linearly with increasing junction temperature, reaching ~50 % of rated 600 W at ~125 °C ambient (with appropriate PCB copper area). Designers must apply thermal derating curves and verify junction temperature rise using the device's thermal resistance and actual PCB layout to ensure reliable operation. The TPSMB9.1AHE3_A/H remains functional up to +185 °C junction temperature.

How is polarity identified on the TPSMB9.1AHE3_A/H package?

The polarity of the TPSMB9.1AHE3_A/H is identified by a color band on the cathode end of the SMB (DO-214AA) package. This marking aligns with industry-standard diode polarity convention: the banded end is the cathode, which must be connected toward the side of the circuit requiring transient voltage clamping (e.g., to the protected signal line), while the anode connects to ground or reference potential. Correct orientation is essential for proper unidirectional TVS operation. The TPSMB9.1AHE3_A/H does not support bidirectional operation.