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Vishay General Semiconductor - Diodes Division TPSMB9.1AHE3_A/I
- Part No.:
- TPSMB9.1AHE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
TPSMB9.1AHE3_A/I.pdf
- Description:
- TVS DIODE 7.78VWM 13.4VC DO214AA
- Quantity:
- Payment:
- Shipping:
Inventory:5,092
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Product details
Overview
TPSMB9.1AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for clamping inductive switching surges and lightning-induced transients on power rails and signal lines. It features a 9.1 V breakdown voltage (VBR), 7.78 V stand-off voltage (VWM), 600 W peak pulse power (10/1000 µs), 44.8 V clamping voltage at 13.4 A peak current, and operates up to +185 °C junction temperature - deployed in automotive sensor protection and industrial power supply input stages.
For engineers reviewing the TPSMB9.1AHE3_A/I datasheet, TPSMB9.1AHE3_A/I pinout, TPSMB9.1AHE3_A/I application, or TPSMB9.1AHE3_A/I equivalent, key selection criteria include unidirectional polarity, SMB (DO-214AA) package compatibility, AEC-Q101 qualification status, TJ = 185 °C thermal rating, and clamping performance under 10/1000 µs surge conditions.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to deliver stable breakdown behavior across temperature and high reliability under repetitive surge stress. Its 10/1000 µs waveform response supports IEC 61000-4-5 Level 3/4 surge immunity in automotive and industrial designs.
The device is rated for 75 A non-repetitive forward surge current (8.3 ms half-sine), exhibits low incremental surge resistance, and maintains clamping integrity with <0.060 %/°C temperature coefficient of VBR, enabling predictable overvoltage protection across -65 °C to +185 °C operating range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 8.65 / 9.10 / 9.55 V at 1 mA - defines precise voltage threshold where avalanche conduction begins |
| VWM | 7.78 V - maximum continuous reverse working voltage before leakage exceeds 25 µA |
| VC @ IPPM | 44.8 V at 13.4 A - clamped voltage during 600 W surge, limiting downstream IC stress |
| PPPM | 600 W (10/1000 µs) - peak transient energy absorption capability per pulse |
| TJ max. | +185 °C - enables operation in under-hood automotive and high-temp industrial environments |
| Polarity | Unidirectional - protects against positive-going transients only; cathode band denotes terminal orientation |
| MSL Level | Level 1 (J-STD-020) - no floor life limitation; compatible with standard SMT reflow up to 260 °C peak |
Pinout & Package
Package: SMB (DO-214AA), surface-mount plastic case with matte tin-plated leads, UL 94 V-0 rated molding compound, cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Anode of internal avalanche diode structure | Connected to protected line; conducts when transient exceeds VWM, shunting current to ground |
| Anode (non-banded end) | Cathode of internal avalanche diode structure | Typically tied to system ground or low-impedance return path for effective clamping |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified (HE3 suffix) | Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance |
| 185 °C junction rating | Supports placement near heat sources (e.g., power MOSFETs, DC/DC converters) without derating |
| Low clamping ratio (VC/VBR ≈ 4.9) | Minimizes overvoltage overshoot during fast transients, improving system-level ESD/surge margin |
| Fast response time (<1 ns) | Activates before sensitive downstream components (e.g., MCU I/O, CAN transceivers) experience damage |
| RoHS-compliant & halogen-free option (HM3) | Meets global environmental compliance requirements without compromising electrical performance |
Applications
| Automotive Sensor Protection | Industrial Power Input Stage |
|---|---|
Use Scenario: Protecting LIN/CAN bus nodes and analog sensor outputs (e.g., pressure, temperature) from load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional TVS placed between signal line and chassis ground to clamp positive transients. Use Value: Prevents latch-up or gate oxide damage in microcontrollers and transceivers by limiting voltage to ≤44.8 V during 13.4 A surge events. | Use Scenario: Safeguarding 12 V/24 V DC input rails of PLC modules and motor drives against inductive kickback and lightning surges. IC Role / Device Role / Timing Role: Primary overvoltage clamp at board-level power entry, upstream of DC/DC converters and LDOs. Use Value: Absorbs 600 W transient energy without degradation, maintaining system uptime in harsh factory environments. |
| Consumer Power Adapter Interface | Telecom Line Card Surge Protection |
Use Scenario: Shielding USB-C PD port and AC/DC adapter secondary-side outputs from ESD and conducted surges. IC Role / Device Role / Timing Role: Secondary-side TVS on 5–20 V output rails to meet IEC 61000-4-2/4-5 compliance. Use Value: Enables compact layout with SMB footprint while delivering 75 A surge current handling and low-leakage (<25 µA at 7.78 V). | Use Scenario: Front-end protection for Ethernet PHY interfaces and DSL line drivers exposed to induced surges on outdoor cabling. IC Role / Device Role / Timing Role: Standoff-rated TVS on differential pairs or single-ended bias lines to suppress common-mode transients. Use Value: Maintains signal integrity with <1 pF junction capacitance at zero bias, avoiding data rate degradation in 10/100/1000BASE-T systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ9.0A | VBR = 9.0–9.9 V (min/typ/max); same SMB package, 600 W rating, but not AEC-Q101 qualified | Lacks automotive qualification; suitable for commercial/industrial use only | Select when AEC-Q101 is not required and cost sensitivity outweighs qualification needs |
| SMCJ9.0A | Same VBR range but in larger SMC (DO-214AB) package; 1500 W PPPM; higher IPPM (22.5 A) | Requires PCB area increase (~3× footprint); used where higher surge margin is mandatory | Choose when system-level surge testing exceeds 600 W or layout allows larger package |
Compared with SMBJ9.0A and SMCJ9.0A, the TPSMB9.1AHE3_A/I delivers automotive-grade reliability in the smallest qualified SMB footprint, with tighter VBR tolerance (±5.3%) and lower clamping voltage - making it optimal for space-constrained, thermally demanding automotive and industrial edge nodes.
Availability
TPSMB9.1AHE3_A/I is available at Aetrix Electronics and suitable for automotive sensor modules, industrial power supplies, consumer adapter interfaces, and telecom line cards requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for TPSMB9.1AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on high-reliability, high-temperature, and automotive-qualified solutions.
The TPSMB9.1AHE3_A/I belongs to Vishay's PAR® family of surface-mount TVS diodes, engineered specifically for robust transient suppression in automotive powertrain, body electronics, and industrial control systems where AEC-Q101 compliance and 185 °C operation are mandatory.
FAQ
What is the breakdown voltage tolerance of the TPSMB9.1AHE3_A/I?
The TPSMB9.1AHE3_A/I has a breakdown voltage (VBR) range of 8.65 V (min) to 9.55 V (max) at 1 mA test current, corresponding to ±5.3% tolerance around the nominal 9.10 V value. This tight distribution ensures consistent clamping onset across production lots and supports reliable design margining in safety-critical automotive applications where the TPSMB9.1AHE3_A/I is commonly deployed.
Is the TPSMB9.1AHE3_A/I RoHS-compliant and halogen-free?
Yes, the TPSMB9.1AHE3_A/I is RoHS-compliant and meets JESD201 Class 2 whisker resistance requirements. However, it is not halogen-free - that specification applies only to the HM3 suffix variant (e.g., TPSMB9.1AHM3_A/I). The HE3 suffix indicates RoHS compliance with standard brominated flame retardants in the molding compound, fully documented in Vishay's material declaration for the TPSMB9.1AHE3_A/I.
Does the TPSMB9.1AHE3_A/I require derating at elevated ambient temperatures?
Yes, the TPSMB9.1AHE3_A/I must be derated above TA = 25 °C per Figure 2 in the datasheet. At 125 °C ambient, its peak pulse power drops to ~40% of the rated 600 W, and at 150 °C, it falls to ~25%. This thermal derating is critical for under-hood automotive placements, and the TPSMB9.1AHE3_A/I's 185 °C TJ rating ensures operational headroom even with significant junction-to-ambient delta.
What is the maximum leakage current of the TPSMB9.1AHE3_A/I at its stand-off voltage?
The TPSMB9.1AHE3_A/I exhibits a maximum reverse leakage current (IR) of 25 µA at its 7.78 V stand-off voltage (VWM) and 25 °C ambient. At elevated temperature (TJ = 150 °C), leakage increases to 50 µA - still well within safe limits for low-power sensor and communication circuits where the TPSMB9.1AHE3_A/I is routinely applied.
Can the TPSMB9.1AHE3_A/I be used in bidirectional configurations?
No, the TPSMB9.1AHE3_A/I is unidirectional only, as explicitly stated in the Vishay datasheet. It protects against positive transients only (anode grounded, cathode to protected line). For bidirectional protection, two TPSMB9.1AHE3_A/I devices in series opposition or a dedicated bidirectional TVS (e.g., TPSMB9.1CA) would be required - the TPSMB9.1AHE3_A/I itself does not support symmetrical clamping.
TPSMB9.1AHE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.78V
- Voltage - Breakdown (Min):
- 8.65V
- Voltage - Clamping (Max) @ Ipp:
- 13.4V
- Current - Peak Pulse (10/1000µs):
- 44.8A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
TPSMB9.1AHE3_A/I FAQ
1.How can I place an order for TPSMB9.1AHE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMB9.1AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMB9.1AHE3_A/I reliable?
The price and inventory of TPSMB9.1AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMB9.1AHE3_A/I is usually 5 days.
3.What payment methods are accepted for TPSMB9.1AHE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMB9.1AHE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMB9.1AHE3_A/I?
TPSMB9.1AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMB9.1AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMB9.1AHE3_A/I?
For technical support, including TPSMB9.1AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMB9.1AHE3_A/I requirements.
6.How does Aetrix verify that TPSMB9.1AHE3_A/I is sourced from the original manufacturer or authorized distributors?
All TPSMB9.1AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMB9.1AHE3_A/I meets industry standards.
7.What is the process for return or replacement of TPSMB9.1AHE3_A/I?
All TPSMB9.1AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with TPSMB9.1AHE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMB9.1AHE3_A/I part is unused and in its original packaging.
Return procedure for TPSMB9.1AHE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMB9.1AHE3_A/I Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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