Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division TPSMC11AHE3_A/I

Part No.:
TPSMC11AHE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AB, SMC
Datasheet:
AetrixTPSMC11AHE3_A/I.pdf
Description:
TVS DIODE 9.4VWM 15.6VC DO214AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,791

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

TPSMC11AHE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, designed for clamping fast voltage transients on power and signal lines. It features 11.0 V nominal breakdown voltage (VBR), 9.40 V stand-off voltage (VWM), 15.6 V maximum clamping voltage at 96.2 A peak pulse current, 1500 W peak pulse power (10/1000 µs), and operates up to +185 °C junction temperature - deployed in automotive power rail protection and industrial sensor interface circuits.

For engineers reviewing the TPSMC11AHE3_A/I datasheet, TPSMC11AHE3_A/I pinout, TPSMC11AHE3_A/I application, or TPSMC11AHE3_A/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, 1500 W surge rating, low clamping ratio (VC/VWM ≈ 1.66), and compatibility with high-reliability PCB layouts requiring MSL Level 1 reflow.

Technical Context

This TVS diode uses passivated anisotropic rectifier technology to achieve stable breakdown characteristics across temperature. Its 185 °C maximum junction temperature and AEC-Q101 qualification confirm suitability for under-hood automotive environments and industrial control systems where thermal derating and long-term reliability are critical.

The device delivers 1500 W peak pulse power per 10/1000 µs waveform with low incremental surge resistance and sub-nanosecond response time. Clamping performance is validated at 96.2 A IPPM, yielding VC = 15.6 V - enabling robust protection of 12 V nominal systems against ISO 7637-2 and IEC 61000-4-5 surges.

Key Specifications

Parameter Value and Actual Design Meaning
VBR (min/typ/max)10.5 / 11.0 / 11.6 V - ensures reliable triggering above 9.40 V system operating voltage while avoiding false trips
VWM9.40 V - maximum continuous reverse voltage before leakage exceeds 5.0 µA, compatible with 12 V nominal rails
VC @ IPPM15.6 V - clamps 96.2 A transient to safe level for downstream 16 V-rated ICs and MOSFETs
PPPM1500 W - sustains single 10/1000 µs surges per JEDEC standards without degradation
TJ max.+185 °C - supports operation in engine control units and power converters with minimal thermal derating
PolarityUnidirectional - protects positive-rail circuits only; requires separate device for negative transients
MSL LevelLevel 1 (260 °C peak) - enables standard lead-free reflow without moisture sensitivity concerns

Pinout & Package

Package: SMC (DO-214AB), surface-mount, matte tin-plated leads, cathode indicated by color band. Dimensions: 7.11 mm × 6.22 mm × 2.90 mm (L × W × H).

Pin/Terminal Circuit Role Design Meaning
AnodeCurrent entry during forward conductionConnected to protected line's ground or low-side return path in unidirectional clamp configuration
CathodeCurrent exit during reverse-biased clampingConnected to protected line's positive rail; color band identifies this terminal for correct PCB orientation

Key Features

Feature Design Value
Junction passivationOptimized anisotropic rectifier process ensures stable VBR drift < ±5 % over 1000 hrs at 150 °C
AEC-Q101 qualificationValidated for automotive applications including engine management, body control modules, and ADAS power supplies
1500 W peak pulse ratingWithstands ISO 7637-2 Pulse 5a (50 V, 100 ms) and IEC 61000-4-5 Combination Wave (4 kV) without failure
Low clamping ratio (VC/VWM)1.66 - minimizes stress on downstream components compared to alternatives with ratios > 1.8
MSL Level 1 complianceEliminates bake requirements prior to assembly; supports high-volume SMT production with J-STD-020

Applications

Automotive Power Rail Protection Industrial Sensor Interface

Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator transients in passenger vehicles.

IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between power input and ground to clamp surges before they reach DC/DC regulators and microcontrollers.

Use Value: Withstands 1500 W pulses and operates up to +185 °C, enabling direct placement near connectors in engine compartments without thermal derating penalties.

Use Scenario: Shielding analog sensor outputs (e.g., pressure, temperature) from ESD and cable discharge events in factory automation systems.

IC Role / Device Role / Timing Role: Low-capacitance TVS on signal lines to prevent latch-up or damage to precision ADC inputs and op-amps.

Use Value: 15.6 V clamping voltage ensures signal integrity remains intact for 0–10 V or 4–20 mA interfaces during 8 kV contact ESD events.

Telecom Power Supply Input Consumer Device USB Port Protection

Use Scenario: Safeguarding AC/DC adapter outputs feeding base station RF modules against lightning-induced surges on outdoor power feeds.

IC Role / Device Role / Timing Role: Primary-level TVS on secondary-side DC bus to absorb energy before it propagates to sensitive RF front-end ICs.

Use Value: 1500 W rating and 96.2 A peak current handling provide margin against IEC 61000-4-5 4 kV line-to-ground surges in telecom infrastructure.

Use Scenario: Adding surge immunity to USB Type-A power delivery paths in smart home hubs and docking stations.

IC Role / Device Role / Timing Role: Unidirectional clamp on VBUS line to suppress transients from hot-plug events and external charger mismatches.

Use Value: 9.40 V stand-off voltage allows normal 5 V operation while clamping to 15.6 V during 10/1000 µs surges, preserving USB BC 1.2 compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar unidirectional TVS diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ11A-E3/5A (Vishay)Same VBR range but lower PPPM = 400 W; SMA package (smaller footprint, lower thermal mass)Limited to low-energy transients; unsuitable for automotive load dump or telecom surge testingSelect when board space is constrained and surge threat level is limited to IEC 61000-4-2 ESD only
1.5KE11A (ON Semiconductor)Through-hole DO-201 package; identical VBR, VC, and PPPM; higher IFSM = 225 ARequires wave solder or hand-solder; incompatible with fully automated SMT linesChoose for legacy through-hole designs or prototyping where reflow compatibility is not required

Compared with SMAJ11A-E3/5A and 1.5KE11A, the TPSMC11AHE3_A/I provides the optimal balance of high surge capability (1500 W), SMT manufacturability (SMC package), and automotive-grade reliability (AEC-Q101, TJ = 185 °C), making it the preferred choice for volume production of automotive and industrial electronics.

Availability

TPSMC11AHE3_A/I is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface, and telecom power supply input applications requiring stable component supply, AEC-Q101 qualification, and high-temperature operational integrity.

Supply support for TPSMC11AHE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, thermal performance, and automotive qualification.

The TPSMC11AHE3_A/I belongs to Vishay's PAR® series of high-power surface-mount TVS diodes, engineered specifically for harsh-environment transient suppression in automotive, industrial, and telecom infrastructure where sustained high-temperature operation and AEC-Q101 compliance are mandatory.

FAQ

What is the exact breakdown voltage tolerance for TPSMC11AHE3_A/I?

The TPSMC11AHE3_A/I has a guaranteed breakdown voltage range of 10.5 V (minimum) to 11.6 V (maximum) at 1 mA test current, with 11.0 V as the nominal value. This ±5 % tolerance is verified per ANSI/IEEE C62.35 and maintained across the full -65 °C to +185 °C operating junction temperature range using the published temperature coefficient of 0.067 %/°C.

Is TPSMC11AHE3_A/I qualified to AEC-Q101, and what does that cover?

Yes, TPSMC11AHE3_A/I is AEC-Q101 qualified - confirmed by Vishay's documentation for base P/NHE3 ordering codes. This qualification covers stress tests including HTGB, HTRB, TCT, UHAST, and mechanical shock, validating reliability for automotive electronic control units. The HE3 suffix explicitly denotes RoHS-compliant and AEC-Q101-qualified construction.

What is the maximum clamping voltage of TPSMC11AHE3_A/I under surge conditions?

The TPSMC11AHE3_A/I clamps to a maximum of 15.6 V when subjected to its rated peak pulse current of 96.2 A (10/1000 µs waveform). This value is measured per JEDEC standards and represents the worst-case voltage seen by downstream circuitry during a full-energy transient event.

Can TPSMC11AHE3_A/I be used in bidirectional protection schemes?

No, TPSMC11AHE3_A/I is unidirectional only, as stated in the Vishay datasheet. It conducts in reverse bias to clamp positive transients on a positive rail but offers no protection against negative-going surges. For bidirectional protection, a dedicated bidirectional TVS such as TPSMC11CAHE3_A/I must be selected instead.

What is the thermal resistance junction-to-ambient (RθJA) for TPSMC11AHE3_A/I in standard PCB layout?

Vishay specifies RθJA = 50 °C/W for the TPSMC11AHE3_A/I when mounted on 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pads at each terminal. This value assumes FR-4 board material and natural convection; actual thermal performance improves with internal copper planes or forced airflow.

TPSMC11AHE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AB, SMC
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
9.4V
Voltage - Breakdown (Min):
10.5V
Voltage - Clamping (Max) @ Ipp:
15.6V
Current - Peak Pulse (10/1000µs):
96.2A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 185°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AB (SMCJ)

TPSMC11AHE3_A/I FAQ

1.How can I place an order for TPSMC11AHE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for TPSMC11AHE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPSMC11AHE3_A/I reliable?

The price and inventory of TPSMC11AHE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMC11AHE3_A/I is usually 5 days.

3.What payment methods are accepted for TPSMC11AHE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMC11AHE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPSMC11AHE3_A/I?

TPSMC11AHE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPSMC11AHE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPSMC11AHE3_A/I?

For technical support, including TPSMC11AHE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMC11AHE3_A/I requirements.

6.How does Aetrix verify that TPSMC11AHE3_A/I is sourced from the original manufacturer or authorized distributors?

All TPSMC11AHE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMC11AHE3_A/I meets industry standards.

7.What is the process for return or replacement of TPSMC11AHE3_A/I?

All TPSMC11AHE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with TPSMC11AHE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPSMC11AHE3_A/I part is unused and in its original packaging.

Return procedure for TPSMC11AHE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TPSMC11AHE3_A/I Tags

  • TPSMC11AHE3_A/I
  • TPSMC11AHE3_A/I PDF
  • TPSMC11AHE3_A/I Datasheet
  • TPSMC11AHE3_A/I Specifications
  • TPSMC11AHE3_A/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division TPSMC11AHE3_A/I
  • Buy TPSMC11AHE3_A/I
  • TPSMC11AHE3_A/I Price
  • TPSMC11AHE3_A/I Distributor
  • TPSMC11AHE3_A/I Supplier
  • TPSMC11AHE3_A/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER