Vishay General Semiconductor - Diodes Division TPSMC33AHE3/57T
- Part No.:
- TPSMC33AHE3/57T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
TPSMC33AHE3/57T.pdf
- Description:
- TVS DIODE 28.2VWM 45.7VC DO214AB
- Quantity:
- Payment:

- Shipping:

Inventory:8,339
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TPSMC33AHE3/57T from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, designed for clamping voltage transients on power and signal lines. It features a 33 V nominal breakdown voltage (VBR = 31.4–34.7 V at 1 mA), 28.2 V stand-off voltage (VWM), 45.7 V maximum clamping voltage (VC) at 32.8 A peak pulse current, 1500 W peak pulse power (10/1000 µs), and operates up to +185 °C junction temperature - used in automotive power rail protection and industrial sensor interface circuits.
For engineers reviewing the TPSMC33AHE3/57T datasheet, TPSMC33AHE3/57T pinout, TPSMC33AHE3/57T application, or TPSMC33AHE3/57T equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, MSL Level 1 rating, 185 °C thermal capability, and compatibility with high-reliability automotive and industrial PCB layouts requiring robust surge immunity without polarity reversal risk.
Technical Context
This TVS diode employs passivated anisotropic rectifier technology to deliver stable clamping under repetitive surge stress and elevated ambient temperatures. Its junction passivation enables reliable operation at TJ = 185 °C and meets AEC-Q101 stress testing requirements for automotive electronics.
The device responds within nanoseconds to transient overvoltages and maintains low incremental surge resistance during 10/1000 µs waveform events. Its unidirectional configuration ensures forward conduction only during reverse-biased overvoltage conditions, making it suitable for DC power line and single-polarity signal line protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 31.4 / 33.0 / 34.7 V at 1 mA - defines precise voltage threshold where avalanche conduction begins, critical for accurate overvoltage trip point alignment |
| VWM | 28.2 V - maximum continuous reverse operating voltage before leakage exceeds 1 µA, sets safe DC bias margin |
| VC @ IPPM | 45.7 V at 32.8 A - clamped voltage during 1500 W surge, determines protected circuit's maximum stress level |
| PPPM | 1500 W (10/1000 µs) - peak transient energy absorption capacity, defines survivability against lightning or inductive switch-off spikes |
| TJ max. | +185 °C - enables use in under-hood automotive modules and high-temperature industrial enclosures without derating |
| Polarity | Unidirectional - blocks forward current; conducts only during reverse overvoltage, eliminating need for series blocking diodes |
| MSL Level | Level 1 (J-STD-020) - supports standard reflow soldering up to 260 °C peak, no moisture sensitivity handling required |
Pinout & Package
Package: SMC (DO-214AB), surface-mount, matte tin-plated leads, cathode indicated by color band. Dimensions: 7.11 × 6.60 × 2.90 mm (L × W × H). Compliant with UL 94 V-0.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry terminal | Connected to lower-potential side of protected line (e.g., GND or return path); defines conduction direction during clamping |
| Cathode | Reverse-biased voltage sensing terminal | Connected to higher-potential side (e.g., VIN, signal line); avalanche initiates here when VAK > VBR |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivated anisotropic rectifier structure | Enables stable VBR drift < ±5 % over 1000 hrs at 150 °C, supporting long-term reliability in harsh environments |
| AEC-Q101 qualification (HE3 suffix) | Validated for automotive-grade stress including HTGB, HTRB, and temperature cycling - required for engine control, ADAS, and body electronics |
| 1500 W peak pulse power (10/1000 µs) | Withstands ISO 7637-2 Pulse 1/2a/5a surges and IEC 61000-4-5 Combination Wave (1.2/50 µs + 8/20 µs) without degradation |
| Low clamping ratio (VC/VBR ≈ 1.39) | Minimizes overvoltage overshoot during fast transients, protecting downstream MOSFET gates and MCU I/O pins |
| MSL Level 1, 260 °C reflow compatible | Eliminates baking preconditioning; supports high-throughput SMT assembly in automotive Tier-1 manufacturing lines |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 24 V battery-fed ECUs from load dump and alternator ripple transients per ISO 16750-2. IC Role / Device Role / Timing Role: Primary clamping element placed between VBAT and GND, absorbing >100 J cumulative surge energy over lifetime. Use Value: Maintains system uptime by preventing latch-up or gate oxide rupture in PMICs and CAN transceivers during cold-crank and jump-start events. |
Use Scenario: Shielding 4–20 mA analog sensor outputs in factory automation PLC modules from ESD and field wiring faults. IC Role / Device Role / Timing Role: Fast-response shunt clamp on signal line, triggered within <1 ns to limit voltage excursion below 50 V. Use Value: Preserves ADC input integrity and eliminates false triggers in safety-critical loop diagnostics without adding series resistance. |
| Telecom DC Power Input Protection | Consumer Device USB Port Surge Suppression |
Use Scenario: Safeguarding PoE-powered switches and base station RF front-end supplies against induced lightning surges. IC Role / Device Role / Timing Role: Secondary-level TVS after primary MOV/GDT stage, providing precise clamping and low capacitance (<100 pF). Use Value: Enables compliance with IEC 61000-4-5 Level 4 (4 kV line-earth) while maintaining signal integrity on high-speed data links. |
Use Scenario: Adding robustness to USB-C power delivery paths in portable medical monitors and smart home hubs. IC Role / Device Role / Timing Role: Unidirectional shunt protector on VBUS line, rated for repeated ±8 kV contact ESD (IEC 61000-4-2). Use Value: Prevents port disablement and firmware lockup during hospital-grade ESD events without affecting USB 2.0 signal rise time. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ33A | Same VBR range (31.4–34.7 V), but lower PPPM = 400 W; SOD-123FL package (smaller footprint, lower thermal mass) | Limited to low-energy transients (e.g., board-level ESD); unsuitable for ISO 7637-2 Pulse 5a or lightning-induced surges | Select SMAJ33A only for space-constrained consumer PCBs where surge threat level is Class 2 or lower. |
| SMCJ33A | Identical SMC package and 1500 W rating, but not AEC-Q101 qualified; VC = 46.9 V (slightly higher than TPSMC33AHE3/57T's 45.7 V) | Acceptable for industrial controls but excluded from automotive OEM BOMs requiring AEC-Q101 documentation traceability | Choose SMCJ33A for cost-sensitive non-automotive designs where full AEC-Q101 audit trail is unnecessary. |
Compared with SMAJ33A and SMCJ33A, the TPSMC33AHE3/57T delivers automotive-grade reliability via AEC-Q101 qualification, tighter clamping (45.7 V vs. 46.9 V), and guaranteed 185 °C operation - making it the sole option for under-hood power management and safety-critical sensor interfaces.
Availability
TPSMC33AHE3/57T is available at Aetrix Electronics and suitable for automotive electronic control units, industrial programmable logic controllers, and telecom infrastructure equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for TPSMC33AHE3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for demanding industrial and automotive applications.
The TPSMC33AHE3/57T belongs to Vishay's PAR® family of high-power TVS diodes, engineered specifically for AEC-Q101-compliant transient suppression in harsh-environment power systems where thermal stability and surge repeatability are mission-critical.
FAQ
What is the exact breakdown voltage tolerance for TPSMC33AHE3/57T?
The TPSMC33AHE3/57T has a specified breakdown voltage range of 31.4 V (minimum) to 34.7 V (maximum) at 1 mA test current, with 33.0 V as the nominal value. This ±5% tolerance is measured per ANSI/IEEE C62.35 standards and remains stable across temperature due to its 0.089 %/°C temperature coefficient - critical for consistent clamping behavior in automotive under-hood applications.
Is TPSMC33AHE3/57T RoHS-compliant and halogen-free?
Yes, the TPSMC33AHE3/57T carries the HE3 suffix, indicating it is RoHS-compliant and AEC-Q101 qualified. However, it is not halogen-free; for halogen-free compliance, the HM3 suffix variant (e.g., TPSMC33AHM3/57T) must be selected - both meet JESD201 Class 2 whisker resistance and J-STD-020 MSL Level 1 reflow requirements.
Can TPSMC33AHE3/57T replace SMAJ33A in an existing design?
No, TPSMC33AHE3/57T cannot serve as a direct drop-in replacement for SMAJ33A due to different package (SMC vs. SOD-123FL), higher thermal mass, and larger PCB footprint. While both share similar VBR, the TPSMC33AHE3/57T's 1500 W rating and AEC-Q101 qualification require layout review for thermal relief and mechanical clearance - redesign is needed for migration.
What is the maximum clamping voltage of TPSMC33AHE3/57T under surge conditions?
The TPSMC33AHE3/57T exhibits a maximum clamping voltage (VC) of 45.7 V at 32.8 A peak pulse current (IPPM) under the standardized 10/1000 µs waveform. This value is guaranteed across the full operating temperature range (-65 °C to +185 °C) and ensures protected ICs experience less than 46 V stress during worst-case transients.
Does TPSMC33AHE3/57T support bidirectional transient suppression?
No, TPSMC33AHE3/57T is strictly unidirectional and functions only as a reverse-biased avalanche clamp. It does not suppress positive-going transients on grounded lines or AC signals. For bidirectional protection, a separate part such as TPSMC33CA (center-tapped, bidirectional variant) must be used - the HE3 suffix confirms unidirectional polarity per Vishay's ordering nomenclature.
TPSMC33AHE3/57T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 28.2V
- Voltage - Breakdown (Min):
- 31.4V
- Voltage - Clamping (Max) @ Ipp:
- 45.7V
- Current - Peak Pulse (10/1000µs):
- 32.8A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
TPSMC33AHE3/57T FAQ
1.How can I place an order for TPSMC33AHE3/57T through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMC33AHE3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMC33AHE3/57T reliable?
The price and inventory of TPSMC33AHE3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMC33AHE3/57T is usually 5 days.
3.What payment methods are accepted for TPSMC33AHE3/57T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMC33AHE3/57T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMC33AHE3/57T?
TPSMC33AHE3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMC33AHE3/57T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMC33AHE3/57T?
For technical support, including TPSMC33AHE3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMC33AHE3/57T requirements.
6.How does Aetrix verify that TPSMC33AHE3/57T is sourced from the original manufacturer or authorized distributors?
All TPSMC33AHE3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMC33AHE3/57T meets industry standards.
7.What is the process for return or replacement of TPSMC33AHE3/57T?
All TPSMC33AHE3/57T units undergo pre-shipment inspection (PSI). If there is an issue with TPSMC33AHE3/57T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMC33AHE3/57T part is unused and in its original packaging.
Return procedure for TPSMC33AHE3/57T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMC33AHE3/57T Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

