Vishay General Semiconductor - Diodes Division TPSMC33HE3_A/I
- Part No.:
- TPSMC33HE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
TPSMC33HE3_A/I.pdf
- Description:
- TVS DIODE 26.8VWM 47.7VC DO214AB
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
TPSMC33HE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, rated for 33 V breakdown voltage (VBR = 31.4–34.7 V), 1500 W peak pulse power (10/1000 µs), and 185 °C maximum junction temperature. It protects MOSFETs, ICs, and sensor signal lines in automotive and industrial power electronics against inductive switching transients.
For engineers reviewing the TPSMC33HE3_A/I datasheet, TPSMC33HE3_A/I pinout, TPSMC33HE3_A/I application, or TPSMC33HE3_A/I equivalent, key selection criteria include clamping voltage (VC = 45.7 V at IPPM), unidirectional polarity, AEC-Q101 qualification, and MSL Level 1 moisture sensitivity rating.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to deliver stable clamping under repetitive surge stress. Its 185 °C junction rating enables operation in high-temperature engine bay and powertrain environments without derating penalties.
The device exhibits low incremental surge resistance and fast response time (<1 ns), enabling effective suppression of ESD and lightning-induced transients on 12 V and 24 V DC bus lines. Clamping occurs at 45.7 V when subjected to its rated 32.8 A peak pulse current (IPPM).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 31.4 / 33.0 / 34.7 V - ensures reliable conduction onset above 28.2 V stand-off voltage while accommodating ±5% process variation |
| VC @ IPPM | 45.7 V - limits downstream voltage stress to safe levels during 32.8 A transient events |
| PPPM | 1500 W - sustains high-energy surges per ISO 7637-2 Pulse 1/2a/5a and IEC 61000-4-5 requirements |
| IFSM | 200 A - withstands 8.3 ms half-sine surge without bond wire failure |
| TJ max. | +185 °C - supports under-hood automotive placement without thermal derating |
| Polarity | Unidirectional - blocks reverse leakage below VWM = 28.2 V, ideal for DC rail protection |
| MSL Level | Level 1 (260 °C peak reflow) - compatible with standard lead-free SMT assembly processes |
Pinout & Package
Package: SMC (DO-214AB), molded case with matte tin-plated leads, cathode indicated by color band. Dimensions: 7.11 mm × 6.22 mm × 2.90 mm (L × W × H).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during forward conduction | Connected to protected circuit ground or low-side return path |
| Cathode | Current exit point during clamping | Connected to protected line (e.g., 12 V rail or signal trace); color band identifies this terminal |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD47 |
| Junction passivation | Reduces surface leakage and improves long-term stability under humid/high-bias conditions |
| Low VF (3.5 V @ 100 A) | Minimizes power dissipation during high-current clamping, reducing thermal stress on PCB traces |
| UL 94 V-0 molding compound | Ensures flame retardancy in safety-critical automotive and industrial enclosures |
| 10/1000 µs waveform rating | Matches industry-standard surge test profiles used in ISO 16750-2 and IEC 61000-4-5 compliance testing |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator transients per ISO 7637-2. IC Role / Device Role / Timing Role: TVS diode placed between power rail and chassis ground to clamp voltage spikes before they reach downstream regulators and microcontrollers. Use Value: Limits peak rail voltage to ≤45.7 V during 32.8 A surges, preventing latch-up or gate oxide damage in 3.3 V/5 V logic. | Use Scenario: Shielding analog output lines of pressure/temperature sensors in factory automation systems from EFT and surge coupling. IC Role / Device Role / Timing Role: Unidirectional TVS connected across differential signal pair (e.g., 4–20 mA loop) to shunt induced common-mode transients. Use Value: Maintains signal integrity with <1 μA leakage at 28.2 V, avoiding offset errors in precision measurement circuits. |
| DC-DC Converter Input Stage | MOSFET Gate Driver Protection |
Use Scenario: Safeguarding buck converter input capacitors and high-side FETs against back-EMF from relay coils or solenoid drivers. IC Role / Device Role / Timing Role: TVS mounted directly at converter input terminals to absorb energy before it propagates into switching stage. Use Value: 1500 W pulse rating handles repeated 100–200 mJ transients without degradation over >100,000 cycles. | Use Scenario: Preventing gate oxide rupture in N-channel power MOSFETs due to Miller-induced voltage spikes during fast switching. IC Role / Device Role / Timing Role: TVS placed between gate and source to clamp overshoot exceeding VGS(max), especially in high-dV/dt motor drive inverters. Use Value: Sub-nanosecond response ensures clamping initiates before 20 V gate threshold is exceeded, preserving FET reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ33A | Lower PPPM (400 W), SMA package (smaller footprint, lower thermal mass) | Not AEC-Q101 qualified; limited to commercial/industrial ambient (TJ max = 150 °C) | Select when cost and board space are critical and automotive qualification is not required. |
| TPSMC33AHM3_A/I | Halogen-free version; identical electrical specs and AEC-Q101 qualification | No functional difference; differs only in material composition (RoHS + halogen-free) | Choose for compliance with strict environmental mandates (e.g., EU automotive OEMs requiring halogen-free BOMs). |
Compared with SMAJ33A and TPSMC33AHM3_A/I, the TPSMC33HE3_A/I offers higher surge robustness (1500 W vs. 400 W) and automotive-grade thermal capability (185 °C), making it suitable for under-hood deployment where sustained high-temperature reliability is mandatory.
Availability
TPSMC33HE3_A/I is available at Aetrix Electronics and suitable for automotive power management, industrial sensor interfaces, and DC-DC converter input protection requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for TPSMC33HE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, rectifiers, and TVS devices, with emphasis on high-reliability performance in harsh environments.
The TPSMC series targets automotive and industrial transient suppression, engineered specifically to meet AEC-Q101 stress testing and operate continuously up to +185 °C junction temperature.
FAQ
What is the clamping voltage of the TPSMC33HE3_A/I under peak surge conditions?
The TPSMC33HE3_A/I has a maximum clamping voltage (VC) of 45.7 V when subjected to its rated 32.8 A peak pulse current (IPPM) using a 10/1000 µs waveform. This value is measured at TA = 25 °C and defines the upper voltage limit imposed on protected circuitry during transient events. The TPSMC33HE3_A/I maintains this clamping performance across its full operating temperature range due to its optimized junction passivation and thermal design.
Is the TPSMC33HE3_A/I qualified for automotive applications?
Yes, the TPSMC33HE3_A/I is AEC-Q101 qualified and carries the HE3 suffix indicating RoHS-compliance and automotive-grade reliability validation. It meets stress tests including high-temperature reverse bias (HTRB), temperature cycling, and ESD per JESD22 standards. The TPSMC33HE3_A/I is rated for continuous operation up to +185 °C junction temperature, making it suitable for under-hood and powertrain applications.
What does the "HE3" suffix mean in TPSMC33HE3_A/I?
The "HE3" suffix in TPSMC33HE3_A/I denotes a RoHS-compliant, AEC-Q101 qualified variant with matte tin-plated leads and JESD201 Class 2 whisker resistance. The "A" in the middle indicates the revision code, and "I" specifies packaging in 13-inch tape-and-reel format (3500 units per reel). The TPSMC33HE3_A/I is distinct from HM3 versions, which add halogen-free material compliance.
How does the TPSMC33HE3_A/I compare to bidirectional TVS diodes?
The TPSMC33HE3_A/I is unidirectional only, meaning it conducts in reverse bias (cathode-to-anode) during overvoltage events but blocks forward current up to 3.5 V at 100 A. Unlike bidirectional TVS diodes, it cannot suppress negative-going transients on AC or bipolar signal lines. Its unidirectional architecture yields lower leakage (<1 µA at 28.2 V) and tighter VBR tolerance, making the TPSMC33HE3_A/I optimal for DC rail protection where polarity is fixed.
What is the recommended PCB layout for optimal performance of the TPSMC33HE3_A/I?
For best transient suppression, mount the TPSMC33HE3_A/I with minimal trace length between its cathode and the protected line, and between its anode and the nearest low-inductance ground plane. Use 8.0 mm × 8.0 mm copper pads per terminal as specified in the datasheet to ensure adequate thermal dissipation and surge current handling. Avoid routing sensitive traces near the TVS body, and maintain ≥0.3 mm clearance to adjacent components to prevent arcing during clamping events. The TPSMC33HE3_A/I's SMC package requires the exact pad dimensions shown in Figure 4 of document 88407.
TPSMC33HE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 26.8V
- Voltage - Breakdown (Min):
- 29.7V
- Voltage - Clamping (Max) @ Ipp:
- 47.7V
- Current - Peak Pulse (10/1000µs):
- 31.4A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
TPSMC33HE3_A/I FAQ
1.How can I place an order for TPSMC33HE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMC33HE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMC33HE3_A/I reliable?
The price and inventory of TPSMC33HE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMC33HE3_A/I is usually 5 days.
3.What payment methods are accepted for TPSMC33HE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMC33HE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMC33HE3_A/I?
TPSMC33HE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMC33HE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMC33HE3_A/I?
For technical support, including TPSMC33HE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMC33HE3_A/I requirements.
6.How does Aetrix verify that TPSMC33HE3_A/I is sourced from the original manufacturer or authorized distributors?
All TPSMC33HE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMC33HE3_A/I meets industry standards.
7.What is the process for return or replacement of TPSMC33HE3_A/I?
All TPSMC33HE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with TPSMC33HE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMC33HE3_A/I part is unused and in its original packaging.
Return procedure for TPSMC33HE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMC33HE3_A/I Tags

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Diodes Incorporated

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Nexperia USA Inc.

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Toshiba Semiconductor and Storage

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Diodes Incorporated
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