Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division TPSMC33HE3_A/I

Part No.:
TPSMC33HE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AB, SMC
Datasheet:
AetrixTPSMC33HE3_A/I.pdf
Description:
TVS DIODE 26.8VWM 47.7VC DO214AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,669

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

TPSMC33HE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, rated for 33 V breakdown voltage (VBR = 31.4–34.7 V), 1500 W peak pulse power (10/1000 µs), and 185 °C maximum junction temperature. It protects MOSFETs, ICs, and sensor signal lines in automotive and industrial power electronics against inductive switching transients.

For engineers reviewing the TPSMC33HE3_A/I datasheet, TPSMC33HE3_A/I pinout, TPSMC33HE3_A/I application, or TPSMC33HE3_A/I equivalent, key selection criteria include clamping voltage (VC = 45.7 V at IPPM), unidirectional polarity, AEC-Q101 qualification, and MSL Level 1 moisture sensitivity rating.

Technical Context

This TVS diode uses passivated anisotropic rectifier technology to deliver stable clamping under repetitive surge stress. Its 185 °C junction rating enables operation in high-temperature engine bay and powertrain environments without derating penalties.

The device exhibits low incremental surge resistance and fast response time (<1 ns), enabling effective suppression of ESD and lightning-induced transients on 12 V and 24 V DC bus lines. Clamping occurs at 45.7 V when subjected to its rated 32.8 A peak pulse current (IPPM).

Key Specifications

ParameterValue and Actual Design Meaning
VBR (min/typ/max)31.4 / 33.0 / 34.7 V - ensures reliable conduction onset above 28.2 V stand-off voltage while accommodating ±5% process variation
VC @ IPPM45.7 V - limits downstream voltage stress to safe levels during 32.8 A transient events
PPPM1500 W - sustains high-energy surges per ISO 7637-2 Pulse 1/2a/5a and IEC 61000-4-5 requirements
IFSM200 A - withstands 8.3 ms half-sine surge without bond wire failure
TJ max.+185 °C - supports under-hood automotive placement without thermal derating
PolarityUnidirectional - blocks reverse leakage below VWM = 28.2 V, ideal for DC rail protection
MSL LevelLevel 1 (260 °C peak reflow) - compatible with standard lead-free SMT assembly processes

Pinout & Package

Package: SMC (DO-214AB), molded case with matte tin-plated leads, cathode indicated by color band. Dimensions: 7.11 mm × 6.22 mm × 2.90 mm (L × W × H).

Pin/TerminalCircuit RoleDesign Meaning
AnodeCurrent entry point during forward conductionConnected to protected circuit ground or low-side return path
CathodeCurrent exit point during clampingConnected to protected line (e.g., 12 V rail or signal trace); color band identifies this terminal

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD47
Junction passivationReduces surface leakage and improves long-term stability under humid/high-bias conditions
Low VF (3.5 V @ 100 A)Minimizes power dissipation during high-current clamping, reducing thermal stress on PCB traces
UL 94 V-0 molding compoundEnsures flame retardancy in safety-critical automotive and industrial enclosures
10/1000 µs waveform ratingMatches industry-standard surge test profiles used in ISO 16750-2 and IEC 61000-4-5 compliance testing

Applications

Automotive Power Rail ProtectionIndustrial Sensor Signal Line Protection

Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator transients per ISO 7637-2.

IC Role / Device Role / Timing Role: TVS diode placed between power rail and chassis ground to clamp voltage spikes before they reach downstream regulators and microcontrollers.

Use Value: Limits peak rail voltage to ≤45.7 V during 32.8 A surges, preventing latch-up or gate oxide damage in 3.3 V/5 V logic.

Use Scenario: Shielding analog output lines of pressure/temperature sensors in factory automation systems from EFT and surge coupling.

IC Role / Device Role / Timing Role: Unidirectional TVS connected across differential signal pair (e.g., 4–20 mA loop) to shunt induced common-mode transients.

Use Value: Maintains signal integrity with <1 μA leakage at 28.2 V, avoiding offset errors in precision measurement circuits.

DC-DC Converter Input StageMOSFET Gate Driver Protection

Use Scenario: Safeguarding buck converter input capacitors and high-side FETs against back-EMF from relay coils or solenoid drivers.

IC Role / Device Role / Timing Role: TVS mounted directly at converter input terminals to absorb energy before it propagates into switching stage.

Use Value: 1500 W pulse rating handles repeated 100–200 mJ transients without degradation over >100,000 cycles.

Use Scenario: Preventing gate oxide rupture in N-channel power MOSFETs due to Miller-induced voltage spikes during fast switching.

IC Role / Device Role / Timing Role: TVS placed between gate and source to clamp overshoot exceeding VGS(max), especially in high-dV/dt motor drive inverters.

Use Value: Sub-nanosecond response ensures clamping initiates before 20 V gate threshold is exceeded, preserving FET reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ33ALower PPPM (400 W), SMA package (smaller footprint, lower thermal mass)Not AEC-Q101 qualified; limited to commercial/industrial ambient (TJ max = 150 °C)Select when cost and board space are critical and automotive qualification is not required.
TPSMC33AHM3_A/IHalogen-free version; identical electrical specs and AEC-Q101 qualificationNo functional difference; differs only in material composition (RoHS + halogen-free)Choose for compliance with strict environmental mandates (e.g., EU automotive OEMs requiring halogen-free BOMs).

Compared with SMAJ33A and TPSMC33AHM3_A/I, the TPSMC33HE3_A/I offers higher surge robustness (1500 W vs. 400 W) and automotive-grade thermal capability (185 °C), making it suitable for under-hood deployment where sustained high-temperature reliability is mandatory.

Availability

TPSMC33HE3_A/I is available at Aetrix Electronics and suitable for automotive power management, industrial sensor interfaces, and DC-DC converter input protection requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for TPSMC33HE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor designs and manufactures discrete semiconductors including diodes, rectifiers, and TVS devices, with emphasis on high-reliability performance in harsh environments.

The TPSMC series targets automotive and industrial transient suppression, engineered specifically to meet AEC-Q101 stress testing and operate continuously up to +185 °C junction temperature.

FAQ

What is the clamping voltage of the TPSMC33HE3_A/I under peak surge conditions?

The TPSMC33HE3_A/I has a maximum clamping voltage (VC) of 45.7 V when subjected to its rated 32.8 A peak pulse current (IPPM) using a 10/1000 µs waveform. This value is measured at TA = 25 °C and defines the upper voltage limit imposed on protected circuitry during transient events. The TPSMC33HE3_A/I maintains this clamping performance across its full operating temperature range due to its optimized junction passivation and thermal design.

Is the TPSMC33HE3_A/I qualified for automotive applications?

Yes, the TPSMC33HE3_A/I is AEC-Q101 qualified and carries the HE3 suffix indicating RoHS-compliance and automotive-grade reliability validation. It meets stress tests including high-temperature reverse bias (HTRB), temperature cycling, and ESD per JESD22 standards. The TPSMC33HE3_A/I is rated for continuous operation up to +185 °C junction temperature, making it suitable for under-hood and powertrain applications.

What does the "HE3" suffix mean in TPSMC33HE3_A/I?

The "HE3" suffix in TPSMC33HE3_A/I denotes a RoHS-compliant, AEC-Q101 qualified variant with matte tin-plated leads and JESD201 Class 2 whisker resistance. The "A" in the middle indicates the revision code, and "I" specifies packaging in 13-inch tape-and-reel format (3500 units per reel). The TPSMC33HE3_A/I is distinct from HM3 versions, which add halogen-free material compliance.

How does the TPSMC33HE3_A/I compare to bidirectional TVS diodes?

The TPSMC33HE3_A/I is unidirectional only, meaning it conducts in reverse bias (cathode-to-anode) during overvoltage events but blocks forward current up to 3.5 V at 100 A. Unlike bidirectional TVS diodes, it cannot suppress negative-going transients on AC or bipolar signal lines. Its unidirectional architecture yields lower leakage (<1 µA at 28.2 V) and tighter VBR tolerance, making the TPSMC33HE3_A/I optimal for DC rail protection where polarity is fixed.

What is the recommended PCB layout for optimal performance of the TPSMC33HE3_A/I?

For best transient suppression, mount the TPSMC33HE3_A/I with minimal trace length between its cathode and the protected line, and between its anode and the nearest low-inductance ground plane. Use 8.0 mm × 8.0 mm copper pads per terminal as specified in the datasheet to ensure adequate thermal dissipation and surge current handling. Avoid routing sensitive traces near the TVS body, and maintain ≥0.3 mm clearance to adjacent components to prevent arcing during clamping events. The TPSMC33HE3_A/I's SMC package requires the exact pad dimensions shown in Figure 4 of document 88407.

TPSMC33HE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AB, SMC
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
26.8V
Voltage - Breakdown (Min):
29.7V
Voltage - Clamping (Max) @ Ipp:
47.7V
Current - Peak Pulse (10/1000µs):
31.4A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 185°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AB (SMCJ)

TPSMC33HE3_A/I FAQ

1.How can I place an order for TPSMC33HE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for TPSMC33HE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPSMC33HE3_A/I reliable?

The price and inventory of TPSMC33HE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMC33HE3_A/I is usually 5 days.

3.What payment methods are accepted for TPSMC33HE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMC33HE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPSMC33HE3_A/I?

TPSMC33HE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPSMC33HE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPSMC33HE3_A/I?

For technical support, including TPSMC33HE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMC33HE3_A/I requirements.

6.How does Aetrix verify that TPSMC33HE3_A/I is sourced from the original manufacturer or authorized distributors?

All TPSMC33HE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMC33HE3_A/I meets industry standards.

7.What is the process for return or replacement of TPSMC33HE3_A/I?

All TPSMC33HE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with TPSMC33HE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPSMC33HE3_A/I part is unused and in its original packaging.

Return procedure for TPSMC33HE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TPSMC33HE3_A/I Tags

  • TPSMC33HE3_A/I
  • TPSMC33HE3_A/I PDF
  • TPSMC33HE3_A/I Datasheet
  • TPSMC33HE3_A/I Specifications
  • TPSMC33HE3_A/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division TPSMC33HE3_A/I
  • Buy TPSMC33HE3_A/I
  • TPSMC33HE3_A/I Price
  • TPSMC33HE3_A/I Distributor
  • TPSMC33HE3_A/I Supplier
  • TPSMC33HE3_A/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER