My Inquiry
My Account
Vishay General Semiconductor - Diodes Division TPSMC6.8AHE3_B/H
- Part No.:
- TPSMC6.8AHE3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
TPSMC6.8AHE3_B/H.pdf
- Description:
- TVS DIODE 5.8VWM 10.5VC DO214AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,181
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TPSMC6.8AHE3_B/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, designed for clamping voltage transients on power and signal lines. It features 6.8 V breakdown voltage (VBR = 6.45–7.14 V at 10 mA), 5.8 V stand-off voltage (VWM), 1500 W peak pulse power (10/1000 µs), 10.5 V clamping voltage at 143 A, and operates up to +185 °C junction temperature - ideal for automotive power rail protection.
For engineers reviewing the TPSMC6.8AHE3_B/H datasheet, TPSMC6.8AHE3_B/H pinout, TPSMC6.8AHE3_B/H application, or TPSMC6.8AHE3_B/H equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, 1500 W surge capability, low clamping ratio (VC/VBR ≈ 1.55), and SMC package thermal performance under high-reliability automotive conditions.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology with optimized junction passivation for stable operation at TJ = 185 °C. Its unidirectional configuration provides forward conduction only during reverse overvoltage events, enabling precise clamping without DC path interruption.
The device delivers 143 A peak pulse current (IPPM) at 10.5 V clamping voltage under 10/1000 µs waveform, with <1 ns response time and low incremental surge resistance. It meets MSL Level 1 per J-STD-020 and is qualified to AEC-Q101 for automotive use.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBR (min/typ/max) | 6.45 / 6.80 / 7.14 V at 10 mA - defines reliable turn-on threshold for transient suppression |
| VWM | 5.8 V - maximum continuous reverse voltage before leakage exceeds 1000 µA |
| VC @ IPPM | 10.5 V at 143 A - clamping voltage limiting downstream component stress during surge |
| PPPM | 1500 W (10/1000 µs) - peak power handling capacity for industrial and automotive load-dump events |
| TJ max. | +185 °C - enables placement near hot components (e.g., power MOSFETs, engine control units) |
| Polarity | Unidirectional - blocks reverse voltage only; conducts forward during clamping |
| Package | SMC (DO-214AB) - industry-standard surface-mount outline with 8.0 mm × 8.0 mm copper pad thermal relief |
Pinout & Package
TPSMC6.8AHE3_B/H is housed in an SMC (DO-214AB) plastic package with matte tin-plated leads. The cathode is marked by a color band on the body. Mounting requires 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pads per terminal for rated power dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry during clamping | Connected to protected circuit's ground or low-side return path |
| Cathode | Reverse-biased terminal during normal operation | Connected to protected line (e.g., 5 V rail, CAN bus, sensor supply); color band identifies this end |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD robustness |
| 185 °C junction rating | Enables use in under-hood ECUs and motor control modules without derating |
| 1500 W peak pulse power | Withstands ISO 7637-2 Pulse 5a (load dump) and IEC 61000-4-5 surge events |
| Low clamping ratio (VC/VBR ≈ 1.55) | Minimizes overvoltage exposure to downstream ICs while maintaining margin above VWM |
| MSL Level 1 (260 °C reflow) | Compatible with standard lead-free SMT assembly without moisture sensitivity concerns |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 5 V and 12 V power rails in engine control units (ECUs) against load dump and inductive switching transients. IC Role / Device Role / Timing Role: Unidirectional TVS diode providing fast clamping of >100 V transients to safe levels within nanoseconds. Use Value: Prevents latch-up or permanent damage to microcontrollers and power management ICs exposed to ISO 7637-2 Pulse 5a events. |
Use Scenario: Safeguarding analog and digital sensor signal lines (e.g., temperature, pressure, position sensors) in factory automation systems. IC Role / Device Role / Timing Role: Transient suppressor placed at connector interface to shunt ESD and cable discharge events. Use Value: Maintains signal integrity and prevents false triggering or reset of ADCs and interface ICs during 8 kV contact ESD per IEC 61000-4-2. |
| Telecom DC Power Input Protection | Computer Peripheral Port Protection |
Use Scenario: Clamping surges on -48 V DC telecom power inputs subjected to lightning-induced coupling and AC line faults. IC Role / Device Role / Timing Role: High-power unidirectional TVS absorbing up to 1500 W pulses without degradation. Use Value: Ensures uninterrupted operation of PoE injectors and base station power supplies during IEC 61000-4-5 Level 4 surges. |
Use Scenario: Protecting USB, HDMI, and SATA data lines in desktop PCs and docking stations from ESD and hot-swap transients. IC Role / Device Role / Timing Role: Low-capacitance TVS suppressing sub-100 ns transients while preserving signal rise/fall times. Use Value: Enables compliance with USB-IF ESD requirements without adding series impedance or degrading eye diagram margins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ6.8A | Lower PPPM (400 W), SMA package (smaller thermal mass), VC = 11.5 V at 33.3 A | Suitable for lower-energy transients (e.g., IEC 61000-4-2 ESD only); not rated for load dump | Select when space-constrained and surge energy ≤ 400 W; verify thermal design for repeated events |
| TPSMC6.8AHE3_T/R | Same electrical specs and AEC-Q101 qualification; differs only in tape-and-reel packaging (3500 pcs vs. 850 pcs) | No functional difference; identical in circuit role, layout, and reliability testing | Choose based on production volume and SMT line feeder compatibility - no redesign required |
Compared with SMAJ6.8A and TPSMC6.8AHE3_T/R, the TPSMC6.8AHE3_B/H offers higher surge endurance (1500 W vs. 400 W) and automotive-grade thermal margin (185 °C), while sharing identical clamping behavior and unidirectional architecture - making it optimal for high-reliability power rail protection where energy and temperature demands exceed SMA-class devices.
Availability
TPSMC6.8AHE3_B/H is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, and telecom power input stages requiring stable component supply, AEC-Q101 compliance, and 1500 W transient immunity.
Supply support for TPSMC6.8AHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for automotive, industrial, and computing markets.
The TPSMC6.8AHE3_B/H belongs to Vishay's PAR® family of high-power TVS diodes, engineered specifically for robust transient suppression in harsh environments where temperature stability and AEC-Q101 validation are mandatory.
FAQ
What is the clamping voltage of TPSMC6.8AHE3_B/H at its rated peak pulse current?
The TPSMC6.8AHE3_B/H has a maximum clamping voltage (VC) of 10.5 V when subjected to its peak pulse current (IPPM) of 143 A under the standardized 10/1000 µs waveform. This value is measured per Figure 1 in the Vishay datasheet 88407 and ensures downstream components see limited overvoltage during surge events. The low VC relative to VBR reflects efficient silicon design and supports tight voltage margining in 5 V and 12 V systems.
Is TPSMC6.8AHE3_B/H qualified for automotive applications?
Yes, TPSMC6.8AHE3_B/H is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in datasheet 88407. It undergoes rigorous stress testing including temperature cycling, high-temperature reverse bias (HTRB), and ESD verification. The device is rated for operation up to +185 °C junction temperature and meets MSL Level 1 - making it suitable for under-hood and transmission-control module deployments.
What does the "_B/H" suffix mean in TPSMC6.8AHE3_B/H?
The "_B/H" suffix in TPSMC6.8AHE3_B/H indicates revision level "B" and packaging format "H", which corresponds to 7-inch diameter plastic tape-and-reel with 850 units per reel. This is defined in the Ordering Information table of Vishay datasheet 88407. The "HE3" portion confirms RoHS compliance and AEC-Q101 qualification, while "B" denotes the specific wafer fabrication and test revision.
How does TPSMC6.8AHE3_B/H compare to bidirectional TVS diodes in circuit design?
TPSMC6.8AHE3_B/H is unidirectional and must be oriented with cathode toward the protected line - unlike bidirectional variants that clamp both polarities. This allows tighter VWM (5.8 V) and lower leakage at operating voltage, improving efficiency in DC-powered systems. It cannot protect against positive-going transients on grounded lines, so circuit topology must ensure fault paths align with its polarity - verified in schematics using the cathode band marking.
What is the maximum leakage current of TPSMC6.8AHE3_B/H at its stand-off voltage?
At VWM = 5.8 V and TA = 25 °C, the TPSMC6.8AHE3_B/H exhibits a maximum reverse leakage current (IR) of 1000 µA. At elevated temperature (TJ = 150 °C), leakage increases to 10,000 µA - a known characteristic of silicon TVS devices. Designers must verify that this leakage remains within acceptable limits for low-power sensor bias networks or high-impedance monitoring circuits.
TPSMC6.8AHE3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5.8V
- Voltage - Breakdown (Min):
- 6.45V
- Voltage - Clamping (Max) @ Ipp:
- 10.5V
- Current - Peak Pulse (10/1000µs):
- 143A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMC)
TPSMC6.8AHE3_B/H FAQ
1.How can I place an order for TPSMC6.8AHE3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for TPSMC6.8AHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TPSMC6.8AHE3_B/H reliable?
The price and inventory of TPSMC6.8AHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMC6.8AHE3_B/H is usually 5 days.
3.What payment methods are accepted for TPSMC6.8AHE3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMC6.8AHE3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TPSMC6.8AHE3_B/H?
TPSMC6.8AHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TPSMC6.8AHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TPSMC6.8AHE3_B/H?
For technical support, including TPSMC6.8AHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMC6.8AHE3_B/H requirements.
6.How does Aetrix verify that TPSMC6.8AHE3_B/H is sourced from the original manufacturer or authorized distributors?
All TPSMC6.8AHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMC6.8AHE3_B/H meets industry standards.
7.What is the process for return or replacement of TPSMC6.8AHE3_B/H?
All TPSMC6.8AHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with TPSMC6.8AHE3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TPSMC6.8AHE3_B/H part is unused and in its original packaging.
Return procedure for TPSMC6.8AHE3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TPSMC6.8AHE3_B/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
