Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division TPSMC8.2HE3_A/I

Part No.:
TPSMC8.2HE3_A/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AB, SMC
Datasheet:
AetrixTPSMC8.2HE3_A/I.pdf
Description:
TVS DIODE 6.63VWM 12.5VC DO214AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,990

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

TPSMC8.2HE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in DO-214AB (SMC) package, designed for clamping voltage transients on power and signal lines. It features 7.38 V to 9.02 V breakdown voltage (VBR), 6.63 V stand-off voltage (VWM), 1500 W peak pulse power (10/1000 µs), 120 A peak pulse current (IPPM), and 12.5 V maximum clamping voltage (VC) - used to protect MOSFETs and ICs in automotive power supplies.

For engineers reviewing the TPSMC8.2HE3_A/I datasheet, TPSMC8.2HE3_A/I pinout, TPSMC8.2HE3_A/I application, or TPSMC8.2HE3_A/I equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 185 °C junction rating, low clamping ratio (VC/VBR ≈ 1.65), and MSL Level 1 reflow compatibility at 260 °C.

Technical Context

This TVS diode employs passivated anisotropic rectifier technology with junction passivation optimized for high-reliability operation. Its unidirectional architecture provides forward conduction only during reverse overvoltage events, enabling precise clamping without interfering with normal DC bias paths.

Rated for TJ = –65 °C to +185 °C, it supports automotive under-hood applications where thermal derating is critical. The device meets JESD201 Class 2 whisker resistance and UL 94 V-0 flammability requirements, with matte tin-plated leads compliant to J-STD-002 and JESD22-B102 solderability standards.

Key Specifications

ParameterValue and Actual Design Meaning
VBR (min/max)7.38 V / 9.02 V - defines minimum voltage at which clamping initiates reliably under 10 mA test current
VWM6.63 V - maximum continuous reverse working voltage before leakage exceeds 200 μA
VC @ IPPM12.5 V - clamped voltage seen by protected circuit during 120 A 10/1000 µs surge
PPPM1500 W - peak transient energy absorption capability per single non-repetitive pulse
IFSM200 A - surge current handling for 8.3 ms half-sine waveform, critical for load dump immunity
TJ max.+185 °C - enables operation in high-temperature environments such as engine control units
AEC-Q101Qualified - confirms reliability for automotive electronic systems per stress-test standard

Pinout & Package

Package: DO-214AB (SMC), surface-mount, cathode indicated by color band. Dimensions: 7.11 mm × 6.22 mm × 2.90 mm (L × W × H). Mounting requires 8.0 mm × 8.0 mm copper pads per terminal per datasheet Fig. 2.

Pin/TerminalCircuit RoleDesign Meaning
AnodeForward conduction path during clampingConnected to lower-potential side of protected line; conducts surge current to ground when reverse-biased beyond VBR
CathodeClamping reference nodeMarked with band; tied to higher-potential rail (e.g., battery+); establishes VWM and VBR thresholds

Key Features

FeatureDesign Value
1500 W peak pulse powerEnables robust protection against ISO 7637-2 Load Dump and IEC 61000-4-5 surge events in 12 V automotive systems
12.5 V clamping voltage at 120 AProvides <13 V rail clamping for 5 V/3.3 V logic interfaces, preventing latch-up or gate oxide damage in downstream MOSFETs
AEC-Q101 qualificationValidates performance across temperature cycling, humidity, mechanical shock, and high-temperature operating life for automotive deployment
MSL Level 1, 260 °C peak reflowSupports lead-free SMT assembly without popcorn cracking or delamination risk
185 °C maximum junction temperaturePermits placement near heat sources (e.g., power inductors, regulators) in compact ECUs without thermal derating penalties

Applications

Automotive Power Rail ProtectionIndustrial Sensor Signal Line Protection

Use Scenario: Protecting 12 V supply rails in engine control modules against load dump transients up to ±120 V.

IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between battery+ and chassis ground to clamp surges before reaching MCU power inputs.

Use Value: Limits rail voltage to ≤12.5 V during 120 A transients, preserving 5 V LDO regulator input integrity and avoiding brownout resets.

Use Scenario: Shielding analog sensor outputs (e.g., pressure, temperature) from ESD and switching noise in factory automation PLCs.

IC Role / Device Role / Timing Role: TVS placed across differential signal pair (e.g., RS-485 A/B) to shunt fast transients while maintaining signal integrity.

Use Value: Sub-1 ns response time prevents >10 kV ESD pulses from propagating into ADC front-end, eliminating data corruption.

Consumer Device USB Port ProtectionTelecom Base Station DC Feed Protection

Use Scenario: Safeguarding USB VBUS lines in portable docking stations exposed to hot-plug induced transients.

IC Role / Device Role / Timing Role: Unidirectional TVS connected between VBUS and GND to absorb 10/1000 µs surges from cable coupling.

Use Value: Clamps VBUS to 12.5 V during 1500 W surges, ensuring USB PD controller remains within absolute maximum ratings.

Use Scenario: Protecting -48 V DC feed lines in 4G/5G remote radio units from lightning-induced surges on outdoor cabling.

IC Role / Device Role / Timing Role: TVS installed at DC input connector to divert common-mode transients before entering DC-DC converter stage.

Use Value: Withstands 200 A 8.3 ms half-sine surge (IFSM), preventing fuse blowout and maintaining uninterrupted base station uptime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ8.0ALower PPPM (600 W), same DO-214AA (SMB) package, VC = 12.3 V at 48.4 ANot rated for AEC-Q101; limited to consumer/industrial use; insufficient for automotive load dumpSelect only for cost-sensitive non-automotive designs with lower surge exposure
TPSMC8.2AHE3_A/I±5 % VBR tolerance (7.79–8.61 V) vs. ±10 % for TPSMC8.2HE3_A/I (7.38–9.02 V); identical package and ratingsNarrower VBR window improves clamping consistency in precision power railsChoose when tighter voltage matching is required for regulated 5 V or 3.3 V system margins

Compared with SMBJ8.0A, TPSMC8.2HE3_A/I delivers 2.5× higher surge power and automotive qualification; versus TPSMC8.2AHE3_A/I, it trades tighter VBR tolerance for broader voltage coverage and lower cost - ideal for general-purpose 12 V rail clamping.

Availability

TPSMC8.2HE3_A/I is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface hardening, and telecom DC feed surge suppression requiring stable component supply across multi-year production cycles.

Supply support for TPSMC8.2HE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and high-temperature performance.

The TPSMC series was developed specifically for AEC-Q101-compliant transient suppression in harsh-environment automotive and industrial applications, prioritizing high-temperature stability, low clamping voltage, and robust surge handling.

FAQ

What is the breakdown voltage range of the TPSMC8.2HE3_A/I?

The TPSMC8.2HE3_A/I has a specified breakdown voltage (VBR) range of 7.38 V to 9.02 V at 10 mA test current, per Vishay Document 88407. This ±10 % tolerance reflects the nominal 8.2 V designation and ensures reliable clamping initiation across manufacturing lots and temperature extremes up to +185 °C junction temperature.

Is the TPSMC8.2HE3_A/I suitable for automotive applications?

Yes, the TPSMC8.2HE3_A/I is AEC-Q101 qualified and rated for TJ = –65 °C to +185 °C, making it suitable for under-hood automotive applications including engine control units, body control modules, and ADAS power supplies. Its 1500 W peak pulse power and 200 A IFSM meet ISO 7637-2 load dump requirements.

What does the "HE3_A/I" suffix mean in TPSMC8.2HE3_A/I?

The "HE3" denotes RoHS-compliant, matte tin-plated leads meeting JESD201 Class 2 whisker resistance; "A" indicates ±10 % VBR tolerance; "I" specifies packaging in 13-inch tape-and-reel with 3500 units per reel. This full suffix identifies the exact construction, compliance, and logistics configuration of the TPSMC8.2HE3_A/I part.

What is the maximum clamping voltage of the TPSMC8.2HE3_A/I during a surge event?

The TPSMC8.2HE3_A/I exhibits a maximum clamping voltage (VC) of 12.5 V at its rated peak pulse current (IPPM) of 120 A under 10/1000 µs waveform conditions. This value is measured per ANSI/IEEE C62.35 and guarantees that protected circuits see no more than 12.5 V during worst-case transient events.

Does the TPSMC8.2HE3_A/I have bidirectional polarity?

No, the TPSMC8.2HE3_A/I is unidirectional only, as explicitly stated in the Vishay datasheet. It functions as a reverse-biased avalanche diode for clamping positive transients on lines referenced to ground. For AC or bipolar signal protection, a separate bidirectional variant (e.g., TPSMC8.2CA) would be required - not the TPSMC8.2HE3_A/I.

TPSMC8.2HE3_A/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AB, SMC
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
6.63V
Voltage - Breakdown (Min):
7.38V
Voltage - Clamping (Max) @ Ipp:
12.5V
Current - Peak Pulse (10/1000µs):
120A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 185°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AB (SMC)

TPSMC8.2HE3_A/I FAQ

1.How can I place an order for TPSMC8.2HE3_A/I through Aetrix?

Please submit a Request for Quotation (RFQ) for TPSMC8.2HE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPSMC8.2HE3_A/I reliable?

The price and inventory of TPSMC8.2HE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMC8.2HE3_A/I is usually 5 days.

3.What payment methods are accepted for TPSMC8.2HE3_A/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMC8.2HE3_A/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPSMC8.2HE3_A/I?

TPSMC8.2HE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPSMC8.2HE3_A/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPSMC8.2HE3_A/I?

For technical support, including TPSMC8.2HE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMC8.2HE3_A/I requirements.

6.How does Aetrix verify that TPSMC8.2HE3_A/I is sourced from the original manufacturer or authorized distributors?

All TPSMC8.2HE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMC8.2HE3_A/I meets industry standards.

7.What is the process for return or replacement of TPSMC8.2HE3_A/I?

All TPSMC8.2HE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with TPSMC8.2HE3_A/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPSMC8.2HE3_A/I part is unused and in its original packaging.

Return procedure for TPSMC8.2HE3_A/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TPSMC8.2HE3_A/I Tags

  • TPSMC8.2HE3_A/I
  • TPSMC8.2HE3_A/I PDF
  • TPSMC8.2HE3_A/I Datasheet
  • TPSMC8.2HE3_A/I Specifications
  • TPSMC8.2HE3_A/I Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division TPSMC8.2HE3_A/I
  • Buy TPSMC8.2HE3_A/I
  • TPSMC8.2HE3_A/I Price
  • TPSMC8.2HE3_A/I Distributor
  • TPSMC8.2HE3_A/I Supplier
  • TPSMC8.2HE3_A/I Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER