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Vishay General Semiconductor - Diodes Division TPSMC9.1AHE3/57T

Part No.:
TPSMC9.1AHE3/57T
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AB, SMC
Datasheet:
AetrixTPSMC9.1AHE3/57T.pdf
Description:
TVS DIODE 7.78VWM 13.4VC DO214AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,120

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Product details

Overview

TPSMC9.1AHE3/57T from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, rated for 9.1 V breakdown voltage (VBR), 7.78 V stand-off voltage (VWM), and 1500 W peak pulse power (10/1000 μs). It delivers 112 V clamping voltage at 112 A peak surge current and operates up to +185 °C junction temperature, designed for robust overvoltage protection on MOSFET gates, IC power rails, and sensor signal lines in automotive and industrial systems.

For engineers reviewing the TPSMC9.1AHE3/57T datasheet, TPSMC9.1AHE3/57T pinout, TPSMC9.1AHE3/57T application, or TPSMC9.1AHE3/57T equivalent, key selection criteria include its AEC-Q101 qualification, 0.060 %/°C VBR temperature coefficient, 50 μA max reverse leakage at VWM, unidirectional polarity with cathode band marking, and compatibility with lead-free reflow per J-STD-020 (MSL level 1, 260 °C peak).

Technical Context

This TVS diode uses passivated anisotropic rectifier technology to achieve stable clamping under repetitive transients while maintaining low incremental surge resistance. Its 185 °C maximum junction temperature and AEC-Q101 qualification confirm suitability for under-hood automotive environments and high-reliability industrial control modules.

The device responds in sub-nanosecond time to voltage spikes induced by inductive load switching or ESD events, clamping at 13.4 V (typ.) above VWM during 10/1000 μs surges. Its DO-214AB package supports 200 A non-repetitive forward surge current (8.3 ms half-sine), enabling protection of downstream power switches without thermal runaway.

Key Specifications

ParameterValue and Actual Design Meaning
VBR (min/typ/max)8.65 / 9.10 / 9.55 V - Ensures reliable triggering above system nominal voltage while avoiding false trips during normal operation.
VWM7.78 V - Maximum continuous reverse voltage before leakage exceeds 50 μA; sets safe operating margin for 9 V rail protection.
VC @ IPPM112 V - Clamped voltage during 1500 W transient; limits stress on protected 12 V logic or power ICs.
IPPM112 A - Peak surge current capability with 10/1000 μs waveform; withstands automotive load-dump energy.
TJ max.+185 °C - Enables placement near heat sources (e.g., motor drivers) without derating loss.
αT0.060 %/°C - Predictable VBR drift across temperature; simplifies design margining in wide-temperature applications.
PolarityUnidirectional - Protects against positive transients only; requires correct orientation relative to DC bias.

Pinout & Package

Package: SMC (DO-214AB), molded case meeting UL 94 V-0, matte tin-plated leads solderable per J-STD-002, MSL level 1 (260 °C peak), cathode indicated by color band.

Pin/TerminalCircuit RoleDesign Meaning
AnodeLow-side reference terminalConnected to ground or lowest potential node; defines current path during clamping.
CathodeHigh-side transient inputConnected to protected line (e.g., 12 V supply); absorbs surge energy into ground via anode.

Key Features

FeatureDesign Value
Junction passivationOptimized anisotropic rectifier structure ensures stable VBR and low leakage over 1000+ thermal cycles.
AEC-Q101 qualificationValidated for automotive use including temperature cycling, HTRB, and ESD testing per AEC standard.
1500 W peak pulse powerHandles ISO 7637-2 Pulse 5a (load dump) without degradation when mounted on 8 mm × 8 mm copper pads.
Fast response timeClamps within <1 ns - faster than typical MOVs or polymer-based protectors, preserving signal integrity.
Low incremental surge resistanceMinimizes voltage overshoot during high-di/dt events, critical for protecting fast-switching MOSFETs.

Applications

Automotive Power Rail ProtectionIndustrial Sensor Signal Line Protection

Use Scenario: Suppressing load-dump transients on 12 V battery-fed ECUs in engine control units and body electronics.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and LDO input to clamp spikes up to 120 V.

Use Value: Prevents latch-up or permanent damage to 3.3 V/5 V microcontrollers and CAN transceivers during cold-crank or alternator failure events.

Use Scenario: Shielding analog output lines (e.g., 4–20 mA current loops) from ESD and inductive kickback in factory automation sensors.

IC Role / Device Role / Timing Role: TVS connected across signal and return paths to shunt transients before reaching op-amp or ADC inputs.

Use Value: Maintains measurement accuracy by limiting voltage excursion to ≤112 V, well below input stage breakdown thresholds.

Consumer Power Adapter Input ProtectionMOSFET Gate Driver Protection

Use Scenario: Safeguarding primary-side controllers in AC/DC adapters against lightning-induced surges on mains input.

IC Role / Device Role / Timing Role: TVS installed across bridge rectifier output to clamp differential-mode transients before bulk capacitor.

Use Value: Eliminates need for larger X/Y capacitors or varistors, reducing BOM cost and PCB footprint while meeting IEC 61000-4-5 Level 3.

Use Scenario: Protecting high-side N-channel MOSFET gate drivers in half-bridge motor controllers from shoot-through-inducing voltage spikes.

IC Role / Device Role / Timing Role: TVS placed between gate and source to clamp Miller-induced ringing exceeding ±20 V.

Use Value: Prevents unintended turn-on by limiting gate-source voltage to safe levels, improving reliability in 48 V BLDC drives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMBJ9.0ALower peak power (600 W), same VBR range (8.55–9.45 V), SMB package (smaller thermal mass)Not suitable for automotive load-dump; limited to consumer-grade surge immunity (IEC 61000-4-5 Level 2)Select when space-constrained and surge energy is ≤600 W; verify thermal derating on 25 mm² pads.
TPSMC9.0AHE3Identical package and qualification; VBR min/typ/max = 8.55/9.0/9.45 V - 0.1 V lower nominal ratingNo functional difference in most 12 V systems; may trigger slightly earlier under marginal overvoltageAcceptable substitute if design tolerates 0.1 V lower VBR; verify clamping margin against protected IC absolute maximum ratings.

Compared with SMBJ9.0A and TPSMC9.0AHE3, the TPSMC9.1AHE3/57T provides higher surge robustness (1500 W vs. 600 W) and tighter VBR tolerance (±5% vs. ±5.6%), making it preferred for AEC-Q101-compliant automotive modules where thermal stability and repeatable clamping are critical.

Availability

TPSMC9.1AHE3/57T is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface circuits, and consumer power adapter input stages requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for TPSMC9.1AHE3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability, high-temperature operation, and automotive qualification.

The TPSMC series belongs to Vishay's PAR® (Protected Anisotropic Rectifier) transient voltage suppressor product line, engineered specifically for high-energy surge immunity in harsh environments including automotive under-hood, industrial motor controls, and telecom infrastructure.

FAQ

What is the maximum clamping voltage of the TPSMC9.1AHE3/57T during a 10/1000 μs surge?

The TPSMC9.1AHE3/57T has a maximum clamping voltage (VC) of 112 V at its rated peak pulse current (IPPM) of 112 A under a 10/1000 μs waveform. This value is measured per JEDEC standards and reflects worst-case voltage seen by protected circuitry during standardized surge testing. The TPSMC9.1AHE3/57T maintains this clamping performance across its full operating temperature range when properly mounted on recommended 8.0 mm × 8.0 mm copper pads.

Is the TPSMC9.1AHE3/57T qualified for automotive applications?

Yes, the TPSMC9.1AHE3/57T is AEC-Q101 qualified, as confirmed by Vishay's documentation and ordering code suffix "HE3", which denotes RoHS-compliant and AEC-Q101-qualified variants. It undergoes rigorous stress testing including temperature cycling, high-temperature reverse bias, and ESD per AEC-Q101 requirements. The TPSMC9.1AHE3/57T is explicitly intended for automotive power rail and signal line protection where reliability under extreme thermal and electrical stress is mandatory.

What does the "HE3" suffix indicate in TPSMC9.1AHE3/57T?

The "HE3" suffix in TPSMC9.1AHE3/57T identifies a RoHS-compliant, AEC-Q101-qualified version with matte tin-plated leads that meet JESD 22-B102 solderability and JESD 201 Class 2 whisker resistance requirements. The "57T" denotes tape-and-reel packaging in 13-inch reels (3500 units per reel), per Vishay's ordering convention. The TPSMC9.1AHE3/57T is not a generic variant - it is the production-grade automotive-qualified part with full traceability and compliance documentation.

How does the temperature coefficient affect the TPSMC9.1AHE3/57T's breakdown voltage?

The TPSMC9.1AHE3/57T has a typical temperature coefficient (αT) of +0.060 %/°C, meaning its breakdown voltage increases linearly with junction temperature. At 150 °C, VBR rises approximately 7.5% above its 25 °C value (9.10 V → ~9.78 V). This predictable drift allows designers to set accurate margins for overvoltage detection circuits. The TPSMC9.1AHE3/57T's specification sheet provides the exact formula for calculating VBR at any TJ, ensuring robust performance across its full -65 °C to +185 °C operating range.

Can the TPSMC9.1AHE3/57T be used in bidirectional protection configurations?

No, the TPSMC9.1AHE3/57T is unidirectional only, as explicitly stated in Vishay's datasheet. It conducts and clamps only for positive transients applied to its cathode relative to anode. For bidirectional protection (e.g., AC lines or data buses), two TPSMC9.1AHE3/57T devices must be connected in series opposition, or a dedicated bidirectional TVS such as the SMBJ9.0CA should be selected. Using a single TPSMC9.1AHE3/57T in reverse-biased configuration will not provide clamping and may fail catastrophically under negative surges.

TPSMC9.1AHE3/57T Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AB, SMC
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
7.78V
Voltage - Breakdown (Min):
8.65V
Voltage - Clamping (Max) @ Ipp:
13.4V
Current - Peak Pulse (10/1000µs):
112A
Power - Peak Pulse:
1500W (1.5kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 185°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AB (SMCJ)

TPSMC9.1AHE3/57T FAQ

1.How can I place an order for TPSMC9.1AHE3/57T through Aetrix?

Please submit a Request for Quotation (RFQ) for TPSMC9.1AHE3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TPSMC9.1AHE3/57T reliable?

The price and inventory of TPSMC9.1AHE3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TPSMC9.1AHE3/57T is usually 5 days.

3.What payment methods are accepted for TPSMC9.1AHE3/57T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TPSMC9.1AHE3/57T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TPSMC9.1AHE3/57T?

TPSMC9.1AHE3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TPSMC9.1AHE3/57T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TPSMC9.1AHE3/57T?

For technical support, including TPSMC9.1AHE3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TPSMC9.1AHE3/57T requirements.

6.How does Aetrix verify that TPSMC9.1AHE3/57T is sourced from the original manufacturer or authorized distributors?

All TPSMC9.1AHE3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TPSMC9.1AHE3/57T meets industry standards.

7.What is the process for return or replacement of TPSMC9.1AHE3/57T?

All TPSMC9.1AHE3/57T units undergo pre-shipment inspection (PSI). If there is an issue with TPSMC9.1AHE3/57T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TPSMC9.1AHE3/57T part is unused and in its original packaging.

Return procedure for TPSMC9.1AHE3/57T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

TPSMC9.1AHE3/57T Tags

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