Toshiba Semiconductor and Storage TRS10A65F,S1Q

Overview

TRS10A65F,S1Q from Toshiba Electronic Devices & Storage Corporation is a 650 V, 10 A silicon carbide Schottky barrier diode in TO-220F-2L package, featuring low forward voltage (1.45 V at 10 A), ultra-low reverse current (0.5 µA at 650 V), and high surge capability (79 A IFSM). It serves as a high-efficiency freewheeling or output rectifier in high-frequency switching power stages.

For engineers reviewing the TRS10A65F,S1Q datasheet, TRS10A65F,S1Q pinout, TRS10A65F,S1Q application, or TRS10A65F,S1Q equivalent, key selection criteria include SiC-specific thermal robustness (Tj = 175 °C), junction capacitance (36 pF), isolation rating (2000 V), and derating guidance for PFC and solar inverter designs.

Technical Context

This second-generation SiC SBD replaces silicon fast recovery diodes in hard-switched and high-frequency resonant topologies. Its zero reverse recovery charge (Qrr ≈ 0) eliminates switching losses associated with minority-carrier devices and enables higher frequency operation without snubbers.

The device operates with minimal temperature-dependent Vf drift and exhibits stable IR up to 150 °C. Its TO-220F-2L package provides reinforced electrical isolation (2000 V) and low thermal resistance (Rth(j-c) = 3.78 °C/W), supporting direct heatsink mounting in industrial-grade power converters.

Key Specifications

Pinout & Package

Package: TO-220F-2L (TOSHIBA 1-10B1A), isolated case, 1.83 g typical weight, 2000 V isolation rating, screw-mount compatible.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with STPSC10H065D and C4D10065A, TRS10A65F,S1Q delivers superior isolation integration, lower capacitance, and tighter VF consistency-making it optimal for compact, safety-certified industrial power supplies where heatsink grounding and EMI control are critical.

Availability

TRS10A65F,S1Q is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for TRS10A65F,S1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power ICs, and storage solutions with emphasis on reliability, efficiency, and industrial-grade performance.

The TRS10A65F,S1Q belongs to Toshiba's second-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in renewable energy and industrial power systems.

FAQ

What is the maximum junction temperature rating for TRS10A65F,S1Q?

The TRS10A65F,S1Q has a maximum junction temperature (Tj) rating of 175 °C. This allows operation in high-ambient environments such as enclosed solar inverters or UPS units. Toshiba recommends limiting steady-state Tj to ≤140 °C for enhanced long-term reliability, per derating guidelines in the official datasheet Rev.6.0.A.

Does TRS10A65F,S1Q have electrical isolation between the case and terminals?

Yes, TRS10A65F,S1Q uses the TO-220F-2L package with reinforced isolation rated at 2000 V (t = 1.0 s). The metal tab (Pin 1/Cathode) is electrically isolated from the internal die structure, enabling direct mounting to grounded heatsinks without additional insulation-critical for safety-compliant industrial power designs.

What is the typical reverse leakage current of TRS10A65F,S1Q at rated voltage?

The TRS10A65F,S1Q exhibits a typical reverse leakage current (IR) of 0.5 µA at VR = 650 V and Ta = 25 °C. This ultra-low leakage remains stable up to 150 °C, making TRS10A65F,S1Q suitable for precision voltage-clamping and high-impedance sensing applications where leakage-induced error must be minimized.

How does the forward voltage of TRS10A65F,S1Q compare at 5 A versus 10 A?

At IF = 5 A (pulse), TRS10A65F,S1Q has a typical forward voltage (VF) of 1.2 V; at IF = 10 A (pulse), VF rises to 1.45 V. This low and predictable VF slope reflects the SiC Schottky barrier's near-ideal conduction behavior, resulting in lower conduction losses than silicon alternatives across its rated current range.

Is TRS10A65F,S1Q RoHS compliant and lead-free?

Yes, TRS10A65F,S1Q is RoHS compliant and lead-free, marked as [[G]]/RoHS COMPATIBLE per Toshiba's documentation. It meets Directive 2011/65/EU requirements. Full environmental compliance details-including halogen content and REACH status-are available through Toshiba's sales representatives and official product labeling.