Toshiba Semiconductor and Storage TRS10E65F,S1Q

Overview

TRS10E65F,S1Q from Toshiba Electronic Devices & Storage Corporation is a 650 V, 10 A silicon carbide Schottky barrier diode in TO-220-2L package, featuring low forward voltage (1.45 V at 10 A), ultra-low reverse leakage (0.5 µA at 650 V), and high surge capability (83 A IFSM). It serves as a high-efficiency freewheeling or output rectifier in high-frequency switching power stages.

For engineers reviewing the TRS10E65F,S1Q datasheet, TRS10E65F,S1Q pinout, TRS10E65F,S1Q application, or TRS10E65F,S1Q equivalent, key selection criteria include its SiC-based zero-recovery behavior, junction capacitance of 36 pF at 650 V, thermal resistance of 1.4 °C/W (j-c), RoHS-compliant marking, and suitability for PFC, solar inverters, UPS, and isolated DC-DC converters.

Technical Context

This second-generation SiC SBD replaces silicon fast recovery diodes in hard-switched and resonant topologies where reverse recovery loss dominates efficiency. Its unipolar conduction eliminates minority-carrier storage delay, enabling operation up to 500 kHz with minimal switching loss and EMI.

The device operates with a maximum junction temperature of 175 °C and requires derating to ≤140 °C for long-term reliability. Its TO-220-2L package supports direct heatsink mounting with 0.6 N·m torque, and its 1.4 °C/W junction-to-case thermal resistance enables high-power density designs without forced air cooling.

Key Specifications

Pinout & Package

Package: TO-220-2L (TOSHIBA designation: 2-10AE1A), single-ended through-hole, insulated tab, 1.9 g typical weight, designed for mechanical mounting with 0.6 N·m torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with TRS10E65F,S1Q, the C3D10065A offers marginally higher VF but broader automotive qualification, while the STPSC10H065D trades 0.2 °C/W higher thermal resistance for extended process stability-both require layout verification for thermal interface and mounting torque compliance.

Availability

TRS10E65F,S1Q is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for TRS10E65F,S1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs, with global manufacturing and quality systems certified to ISO 9001 and IATF 16949.

The TRS10E65F,S1Q belongs to Toshiba's second-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-reliability power conversion in industrial and renewable energy systems.

FAQ

What is the maximum junction temperature rating for TRS10E65F,S1Q?

The TRS10E65F,S1Q has a maximum junction temperature (Tj) rating of 175 °C. However, Toshiba recommends limiting steady-state operation to ≤140 °C to ensure long-term reliability and prevent accelerated parametric drift. This derating guidance applies across all operating conditions and is documented in the "Usage Considerations" section of the TRS10E65F,S1Q datasheet Rev. 2.0.A.

Is TRS10E65F,S1Q RoHS compliant?

Yes, TRS10E65F,S1Q is RoHS compliant, marked as [[G]]/RoHS COMPATIBLE on the device body. The part meets Directive 2011/65/EU requirements for restriction of hazardous substances. Full environmental compliance documentation-including Pb-free status and material declarations-is available through Toshiba's official sales channels and technical support portal for the TRS10E65F,S1Q.

Does TRS10E65F,S1Q have a built-in thermal protection feature?

No, TRS10E65F,S1Q does not include integrated thermal protection circuitry. It is a passive discrete diode with no sensing or shutdown functionality. Thermal management must be implemented externally via heatsink design, airflow, and system-level temperature monitoring. The TRS10E65F,S1Q datasheet specifies Rth(j-c) = 1.4 °C/W and provides derating curves to guide safe thermal design for the TRS10E65F,S1Q.

Can TRS10E65F,S1Q replace a silicon fast recovery diode in an existing design?

Yes, TRS10E65F,S1Q can directly replace many silicon FRDs in TO-220-2L packages, provided layout accommodates its zero Qrr behavior-such as reduced snubber sizing and adjusted gate drive timing. Its identical pinout and mechanical footprint enable drop-in substitution, but system-level validation of EMI, thermal performance, and transient response is required before finalizing the TRS10E65F,S1Q integration.

What is the typical junction capacitance of TRS10E65F,S1Q at 650 V?

The typical junction capacitance (Cj) of TRS10E65F,S1Q is 36 pF when measured at VR = 650 V and f = 1 MHz. This low value contributes to reduced capacitive turn-on loss and improved high-frequency switching performance. The Cj vs. VR curve (Fig. 9.4 in the TRS10E65F,S1Q datasheet) confirms stable capacitance down to <40 pF across the full 0–650 V reverse bias range.