Toshiba Semiconductor and Storage TRS10V65H,LQ

Overview

TRS10V65H from Toshiba Electronic Devices & Storage Corporation is a 650 V, 10 A silicon carbide Schottky barrier diode optimized for high-frequency, high-efficiency power conversion. It delivers VF = 1.2 V (typ.) at 10 A, Qc = 27 nC (typ.), and IR = 2.0 µA (typ.) at 650 V, enabling reduced conduction and switching losses in PFC stages and solar inverters.

For engineers reviewing the TRS10V65H datasheet, TRS10V65H pinout, TRS10V65H application, or TRS10V65H equivalent, key selection criteria include its DFN8x8 package with heatsink cathode, low thermal resistance (Rth(j-c) = 1.90 °C/W), and third-generation SiC chip design validated for 175 °C junction operation.

Technical Context

This SiC SBD uses a third-generation chip architecture to minimize forward voltage and capacitive charge while maintaining ultra-low reverse leakage. Its 650 V VRRM rating and 26 A IFSM support robust surge handling in DC-DC and UPS front-end rectification.

The device features a thermally enhanced DFN8x8 package with cathode connected to the exposed metal pad for direct heatsink mounting. Electrical characteristics are specified across -55 °C to 175 °C, with guaranteed Rth(j-c) ≤ 1.90 °C/W at Tc = 25 °C.

Key Specifications

Pinout & Package

TRS10V65H is housed in a surface-mount DFN8x8 package (Toshiba designation: 2-8T1A), weighing 0.175 g (typ.). The exposed cathode pad (Pin 5) serves as both electrical terminal and thermal path to the PCB heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with STPSC10H065D and C4D10065A, TRS10V65H offers the lowest combined VF/Qc figure-of-merit in a thermally optimized DFN8x8 package, making it optimal for high-density, high-efficiency 650 V SiC rectification where board area and thermal resistance are constrained.

Availability

TRS10V65H is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for TRS10V65H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability and industrial-grade performance.

The TRS10V65H belongs to Toshiba's third-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-temperature power conversion in renewable energy and industrial UPS systems.

FAQ

What is the maximum junction temperature rating for TRS10V65H?

The TRS10V65H has a maximum rated junction temperature (Tj) of 175 °C. This allows continuous operation in high-ambient environments such as sealed UPS cabinets or rooftop solar inverters without forced cooling. Derating curves in the datasheet specify IF(DC) limits versus case temperature, with full 10 A current supported up to Tc = 145 °C. Thermal design must maintain Tj ≤ 175 °C under worst-case load and ambient conditions.

Does TRS10V65H have a pin-to-pin compatible alternative in the same DFN8x8 package?

No documented pin-to-pin compatible alternative exists for TRS10V65H in the DFN8x8 footprint. While other 650 V/10 A SiC SBDs like STPSC10H065D share similar electrical specs, they use different packages (e.g., TO-220AC or D2PAK). The TRS10V65H's unique Pin 5 cathode-heatsink configuration and Pins 1–2 NC layout require dedicated PCB layout; substitution would necessitate board revision.

How is thermal performance measured for TRS10V65H?

Thermal performance of TRS10V65H is quantified by Rth(j-c) = 1.90 °C/W (max), measured from junction to case (exposed cathode pad) at Tc = 25 °C. This value assumes ideal soldering to a 25 mm² copper pad with 2 oz copper thickness. Actual board-level Rth(j-board) depends on PCB stack-up, copper area, and thermal vias-designers should validate using IR thermography or transient dual-interface testing per JEDEC JESD51-14.

What does "third-generation chip design" mean for TRS10V65H?

The "third-generation chip design" in TRS10V65H refers to Toshiba's proprietary SiC die architecture featuring refined epitaxial layer doping, optimized Schottky contact metallization, and edge termination that collectively reduce VF and Qc while maintaining IR stability at 175 °C. This generation is validated for >10,000 hours MTTF in 150 °C ambient PFC applications per Toshiba's reliability handbook.

Can TRS10V65H be used in place of a silicon fast recovery diode?

Yes, TRS10V65H can replace silicon fast recovery diodes in high-frequency (>50 kHz) rectification, provided layout accommodates its DFN8x8 footprint and thermal interface requirements. Its zero reverse recovery charge eliminates switching spikes and EMI associated with Si diodes, but designers must verify gate drive compatibility in synchronous rectifier circuits and ensure adequate heatsinking for the cathode pad.