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Toshiba Semiconductor and Storage TRS12E65H,S1Q
- Part No.:
- TRS12E65H,S1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
TRS12E65H,S1Q.pdf
- Description:
- G3 SIC-SBD 650V 12A TO-220-2L
- Quantity:
- Payment:
- Shipping:
Inventory:370
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Product details
Overview
TRS12E65H,S1Q from Toshiba Electronic Devices & Storage Corporation is a 650 V, 12 A silicon carbide Schottky barrier diode in TO-220-2L package, featuring VF = 1.2 V (typ.) at 12 A, Qc = 33 nC (typ.), and IR = 2.4 µA (typ.) at 650 V and 25 °C. It is engineered for high-efficiency PFC stages and solar inverter DC-link rectification where low conduction loss and fast switching are critical.
For engineers reviewing the TRS12E65H,S1Q datasheet, TRS12E65H,S1Q pinout, TRS12E65H,S1Q application, or TRS12E65H,S1Q equivalent, key selection considerations include its 650 V repetitive peak reverse voltage, 1.40 °C/W junction-to-case thermal resistance, third-generation SiC chip design, RoHS-compliant TO-220-2L mechanical form factor, and suitability for thermally demanding 150 °C junction operation.
Technical Context
This SiC Schottky diode replaces conventional silicon fast recovery diodes in high-frequency, high-voltage power conversion topologies. Its zero reverse recovery charge eliminates switching losses associated with minority-carrier devices, enabling >100 kHz operation in totem-pole PFC and two-level solar inverters.
The device uses Toshiba's third-generation SiC epitaxial process and optimized anode metallization to achieve stable forward voltage and ultra-low capacitive charge across temperature. Thermal performance is defined with Tc = 25 °C and Tc = 148 °C reference points, supporting direct heatsink mounting without isolation pads under rated conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Withstands DC-link voltages up to 650 V in solar inverters and industrial UPS systems without avalanche breakdown. |
| IF(DC) | 12 A - Sustains continuous forward current at 12 A with Tc = 148 °C, enabling compact heatsink designs in 3–5 kW PFC modules. |
| VF (typ.) | 1.2 V @ 12 A - Reduces conduction loss by ~40% vs. comparable Si FRD, directly improving system efficiency at full load. |
| Qc (typ.) | 33 nC @ 400 V - Minimizes turn-off energy in hard-switched DC-DC converters, lowering EMI and snubber stress. |
| Rth(j-c) | 1.40 °C/W - Enables direct thermal coupling to heatsinks, supporting >70 W power dissipation at ΔT = 100 °C. |
| IR (typ.) | 2.4 µA @ 650 V, 25 °C - Ensures negligible leakage in high-impedance bus monitoring circuits and standby modes. |
Pinout & Package
Package: TO-220-2L (TOSHIBA designation 2-10AE1A), single-sided metal tab, isolated case, weight 1.9 g (typ.). Mounting torque: 0.6 N·m.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Tab side marking) | Cathode | Connected to heatsink and negative DC rail; electrically active terminal requiring insulation if heatsink is grounded. |
| 2 | Anode | Connects to AC input or switching node; carries full forward current and must be routed with low-inductance layout. |
Key Features
| Feature | Design Value |
|---|---|
| Third-generation SiC chip design | Improved crystal defect control and interface passivation yield higher reliability and tighter VF distribution across production lots. |
| Low total capacitive charge (Qc) | 33 nC enables faster voltage transitions and reduced gate driver loading in synchronous rectifier configurations. |
| Low reverse leakage (IR) | 2.4 µA at 650 V ensures minimal power loss during off-state in high-voltage string applications like PV module-level converters. |
| High junction temperature rating | 175 °C max Tj allows operation in confined enclosures without derating when heatsink temperature remains ≤148 °C. |
Applications
| Power Factor Correction | Solar Inverters |
|---|---|
Use Scenario: Totem-pole PFC stage in 3.3–5 kW server PSUs operating at 70–100 kHz switching frequency. IC Role / Device Role / Timing Role: Unidirectional high-frequency rectifier replacing Si FRD to eliminate reverse recovery loss and reduce MOSFET voltage overshoot. Use Value: Enables >98.5% efficiency at full load by reducing conduction and switching losses simultaneously. | Use Scenario: DC-link freewheeling path in string inverters handling 600–1000 V DC input from photovoltaic arrays. IC Role / Device Role / Timing Role: High-voltage, low-Qc output rectifier in two-level inverter topology with 16 kHz PWM. Use Value: Low IR minimizes idle power loss during night-time anti-islanding detection cycles. |
| Uninterruptible Power Supplies | DC-DC Converters |
Use Scenario: Bidirectional DC-DC stage in online UPS systems with 400 V DC bus and 50 kHz phase-shifted full-bridge topology. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier diode in isolated LLC resonant converter. Use Value: 1.2 V VF reduces secondary conduction loss by 35% vs. Si Schottky, improving battery backup runtime. | Use Scenario: Input rectification in 48 V–12 V isolated flyback converters for telecom base station power supplies. IC Role / Device Role / Timing Role: Primary-side clamp diode absorbing transformer leakage energy during MOSFET turn-off. Use Value: 33 nC Qc limits clamp capacitor voltage rise, allowing smaller snubber components and tighter voltage regulation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPSC12H065D | Same 650 V/12 A rating; VF = 1.35 V (max) at 12 A; Qc = 38 nC (typ.) at 400 V; TO-220AC package with non-isolated tab. | Higher VF increases conduction loss in high-duty-cycle PFC; non-isolated tab requires insulating washer for grounded heatsinks. | Prefer TRS12E65H,S1Q when thermal interface simplicity and lower VF are prioritized over cost-sensitive volume procurement. |
| IXYS DSSK12-06A | 650 V/12 A dual-diode module in TO-247AD; VF = 1.45 V (max); Qc = 42 nC (typ.); includes integrated thermal pad. | Designed for dual-phase PFC or interleaved topologies; larger footprint and higher parasitic inductance limit <80 kHz use. | Choose TRS12E65H,S1Q for single-diode, space-constrained designs requiring lowest possible Qc and proven 100+ kHz capability. |
Compared with STPSC12H065D and IXYS DSSK12-06A, TRS12E65H,S1Q delivers the lowest typ. VF and Qc in TO-220-2L form factor, making it optimal for thermally constrained, high-frequency PFC and solar inverter applications where conduction and switching loss trade-offs are tightly balanced.
Availability
TRS12E65H,S1Q is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.
Supply support for TRS12E65H,S1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency, reliability, and automotive-grade quality.
The TRS12E65H,S1Q belongs to Toshiba's third-generation SiC Schottky diode product line, developed specifically for high-efficiency, high-voltage AC-DC and DC-DC conversion in renewable energy and industrial power systems.
FAQ
What is the maximum junction temperature rating for TRS12E65H,S1Q?
The TRS12E65H,S1Q has a maximum junction temperature (Tj) rating of 175 °C. This allows operation in high-ambient environments such as enclosed solar inverter cabinets or industrial UPS systems. The device maintains specified electrical characteristics up to this temperature, provided thermal design ensures Tc ≤ 148 °C per datasheet note 1. Derating guidelines are detailed in the Toshiba Semiconductor Reliability Handbook.
Is TRS12E65H,S1Q RoHS compliant?
Yes, TRS12E65H,S1Q is RoHS compliant, marked as [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] per Toshiba's labeling standard. Compliance aligns with EU Directive 2011/65/EU. Full environmental documentation, including substance declarations and test reports, is available through Toshiba's official sales channels and authorized distributors.
What is the thermal resistance from junction to case (Rth(j-c)) for TRS12E65H,S1Q?
The junction-to-case thermal resistance (Rth(j-c)) for TRS12E65H,S1Q is 1.40 °C/W, measured with Tc = 25 °C. This value reflects direct thermal conduction from the SiC die to the TO-220-2L metal tab. For thermal design, this enables calculation of junction temperature rise above heatsink temperature, supporting accurate lifetime estimation in continuous high-power operation.
Does TRS12E65H,S1Q have a specified reverse recovery time (trr)?
No-TRS12E65H,S1Q is a majority-carrier SiC Schottky diode and exhibits no reverse recovery time (trr). Unlike silicon PN junction diodes, it has zero reverse recovery charge (Qrr = 0), eliminating associated switching losses and EMI. The datasheet specifies total capacitive charge (Qc = 33 nC typ.) instead, which governs voltage-dependent turn-off behavior in hard-switched circuits.
What is the mounting torque specification for TRS12E65H,S1Q?
The recommended mounting torque for TRS12E65H,S1Q is 0.6 N·m, applied to the TO-220-2L package screw hole. This ensures optimal thermal contact between the metal tab and heatsink while avoiding mechanical stress that could damage the internal die attach or leadframe. Exceeding this torque may deform the package or compromise long-term thermal interface integrity.
TRS12E65H,S1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 12A
- Voltage - Forward (Vf) (Max) @ If:
- 1.35 V @ 12 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 120 µA @ 650 V
- Capacitance @ Vr, F:
- 778pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-2L
- Operating Temperature - Junction:
- 175°C
TRS12E65H,S1Q FAQ
1.How can I place an order for TRS12E65H,S1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TRS12E65H,S1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TRS12E65H,S1Q reliable?
The price and inventory of TRS12E65H,S1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TRS12E65H,S1Q is usually 5 days.
3.What payment methods are accepted for TRS12E65H,S1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TRS12E65H,S1Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TRS12E65H,S1Q?
TRS12E65H,S1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TRS12E65H,S1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TRS12E65H,S1Q?
For technical support, including TRS12E65H,S1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TRS12E65H,S1Q requirements.
6.How does Aetrix verify that TRS12E65H,S1Q is sourced from the original manufacturer or authorized distributors?
All TRS12E65H,S1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TRS12E65H,S1Q meets industry standards.
7.What is the process for return or replacement of TRS12E65H,S1Q?
All TRS12E65H,S1Q units undergo pre-shipment inspection (PSI). If there is an issue with TRS12E65H,S1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TRS12E65H,S1Q part is unused and in its original packaging.
Return procedure for TRS12E65H,S1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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