Toshiba Semiconductor and Storage TRS20N65FB,S1Q

Overview

TRS20N65FB from Toshiba Electronic Devices & Storage Corporation is a 650 V, 10 A per-leg silicon carbide Schottky barrier diode in TO-247 package, featuring low forward voltage (1.45 V typ. at 10 A), ultra-low reverse current (0.5 µA typ. at 650 V), and low junction capacitance (38 pF typ.), optimized for high-efficiency PFC and solar inverter boost stages.

For engineers reviewing the TRS20N65FB datasheet, TRS20N65FB pinout, TRS20N65FB application, or TRS20N65FB equivalent, key selection criteria include its dual-anode TO-247 configuration, 158 A non-repetitive surge rating (both legs), thermal resistance of 0.7 °C/W (junction-to-case, both legs), and SiC-specific zero reverse recovery charge.

Technical Context

This SiC SBD implements a second-generation chip design with dual anode terminals sharing a common cathode heatsink terminal, enabling interleaved or parallel operation without external current-sharing resistors. Its unipolar conduction eliminates reverse recovery losses and associated EMI.

Rated for 650 V repetitive peak reverse voltage and 107 °C maximum junction temperature, the device sustains 20 A forward pulse current per leg under specified conditions and delivers 100 W power dissipation capability when mounted to a heatsink at Tc = 25 °C.

Key Specifications

Pinout & Package

Package: TO-247 (Toshiba designation 2-16L1A), 3-terminal, isolated mounting flange (cathode), weight 6.15 g (typ.). Cathode (Pin 2) serves as mechanical and thermal interface to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with STPSC20H065D and IXYS DSSK2x15-06A, TRS20N65FB uniquely combines dual-anode topology, sub-1.5 V VF, and true zero-Qrr behavior-enabling simpler thermal management, higher switching frequency, and elimination of snubbers in critical PFC and solar applications.

Availability

TRS20N65FB is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant sourcing.

Supply support for TRS20N65FB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, thermal performance, and industrial-grade longevity.

The TRS20N65FB belongs to Toshiba's second-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-voltage AC-DC and DC-DC conversion in renewable energy and industrial power systems.

FAQ

What is the maximum junction temperature rating for TRS20N65FB?

The TRS20N65FB has a maximum junction temperature (Tj) rating of 175 °C. This allows operation in high-ambient environments such as enclosed solar inverter cabinets or industrial UPS enclosures. Derating curves in the official Toshiba datasheet (Rev. 1.0.A) specify safe operating area limits based on case temperature and forward current. The TRS20N65FB maintains stable electrical characteristics up to this limit when thermal resistance constraints are observed.

Does TRS20N65FB have zero reverse recovery charge (Qrr)?

Yes, TRS20N65FB is a silicon carbide Schottky barrier diode and exhibits no minority-carrier storage; therefore, its reverse recovery charge (Qrr) is effectively zero. This eliminates switching losses and EMI associated with recovery tails seen in silicon PN diodes. Measured junction charge (Qcj) is 24 nC (typ.), representing only capacitive displacement current-not stored charge-confirming true unipolar operation in the TRS20N65FB.

How is thermal management implemented for TRS20N65FB in TO-247 package?

Thermal management for TRS20N65FB relies on direct mounting of Pin 2 (cathode/heatsink) to an external heatsink using recommended torque (0.8 N·m). With Rth(j-c) = 0.7 °C/W (both legs), the device transfers heat efficiently without thermal interface material if surface flatness and finish meet Toshiba's specification. PCB copper area alone is insufficient; forced-air or conductive cooling via the cathode terminal is mandatory for full 20 A operation in the TRS20N65FB.

Can TRS20N65FB replace conventional silicon diodes in existing PFC designs?

TRS20N65FB can replace silicon fast recovery diodes in PFC boost stages, but layout and gate drive timing must be reviewed. Its lower VF reduces conduction loss, while zero Qrr eliminates snubber networks and lowers MOSFET voltage stress. However, higher dV/dt immunity and reduced EMI filtering requirements mean board-level redesign may improve performance-but no PCB layer changes are needed solely for TRS20N65FB footprint compatibility.

Is TRS20N65FB RoHS compliant and lead-free?

Yes, TRS20N65FB is RoHS compliant and lead-free, marked as [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] per Toshiba documentation. It meets Directive 2011/65/EU requirements for restriction of hazardous substances. Full environmental compliance data-including substance declarations and test reports-is available through Toshiba's sales representatives and authorized distributors for the TRS20N65FB.