Toshiba Semiconductor and Storage TRS24N65FB,S1F(S

Overview

TRS24N65FB from Toshiba Electronic Devices & Storage Corporation is a 650 V, 24 A dual-leg SiC Schottky barrier diode in TO-247 package, featuring low forward voltage (1.45 V at 12 A), ultra-low reverse current (0.6 µA at 650 V), and high surge capability (184 A peak for both legs). It serves as a high-efficiency freewheeling or output rectifier in high-frequency switching power stages.

For engineers reviewing the TRS24N65FB datasheet, TRS24N65FB pinout, TRS24N65FB application, or TRS24N65FB equivalent, key selection criteria include its dual-anode configuration, junction-to-case thermal resistance of 0.65 °C/W (both legs), 46 pF typical junction capacitance, and suitability for PFC, solar inverters, UPS, and isolated DC-DC converters operating above 100 kHz.

Technical Context

This second-generation SiC SBD integrates two independent 650 V/12 A diode legs in a single TO-247 package with shared heatsink cathode (Pin 2). Its design targets high-voltage, high-frequency AC-DC and DC-DC conversion where low conduction loss and negligible reverse recovery are critical.

The device operates with zero reverse recovery charge, enabling hard-switched topologies without snubbers. Thermal performance is optimized via low R_th(j-c) (0.65 °C/W) under dual-leg conduction and robust surge rating (184 A IFSM), supporting transient-heavy applications like motor drives and renewable energy interfaces.

Key Specifications

Pinout & Package

Package: TO-247 (TOSHIBA 2-16L1A), through-hole, isolated heatsink tab (cathode-connected metal flange). Weight: 6.15 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with STPSC2006D and IXYS DSSK28-06A, TRS24N65FB delivers superior thermal integration (0.65 °C/W dual-leg R_th(j-c)), lowest leakage (0.6 µA), and true monolithic dual-anode architecture-enabling higher power density and efficiency in next-gen PFC and solar inverters.

Availability

TRS24N65FB is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply, long-lifecycle support, and RoHS-compliant sourcing.

Supply support for TRS24N65FB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures high-reliability power semiconductors, including SiC diodes, MOSFETs, and IGBTs, with focus on industrial, automotive, and energy infrastructure markets.

The TRS24N65FB belongs to Toshiba's second-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-frequency power conversion systems demanding low loss, high surge tolerance, and thermal robustness.

FAQ

What is the maximum continuous forward current rating for TRS24N65FB?

The TRS24N65FB is rated for 24 A DC total forward current when both legs conduct simultaneously with proper heatsinking (T_c = 25 °C). Each leg supports 12 A continuously, and the dual-leg configuration allows current sharing without external balancing components. This rating assumes mounting torque of 0.8 N·m and thermal interface material with ≤0.5 °C·in²/W resistance.

Does TRS24N65FB have reverse recovery charge (Q_rr)?

No, TRS24N65FB is a silicon carbide Schottky barrier diode and exhibits zero reverse recovery charge (Q_rr = 0). Unlike silicon PN diodes, it has no minority carrier storage, eliminating reverse recovery losses and associated EMI. This characteristic is intrinsic to the TRS24N65FB's material and structure, confirmed in Toshiba's electrical characteristics table and curve Fig. 8.3.

How is the cathode terminal configured on TRS24N65FB?

The cathode of TRS24N65FB is internally connected to Pin 2 and the metal heatsink flange. This common cathode serves both diode legs, requiring electrical isolation of the flange from PCB ground unless the system design explicitly references the cathode as the circuit ground. The TO-247 package's insulated flange enables flexible mechanical mounting while maintaining electrical separation.

What is the junction-to-case thermal resistance for TRS24N65FB under dual-leg operation?

Under dual-leg conduction, the TRS24N65FB has a maximum junction-to-case thermal resistance (R_th(j-c)) of 0.65 °C/W, measured at T_c = 25 °C. This value reflects the combined thermal path from both dies to the shared heatsink flange and is critical for calculating junction temperature rise in high-power applications such as solar inverters and UPS systems using TRS24N65FB.

Is TRS24N65FB RoHS compliant?

Yes, TRS24N65FB is RoHS compliant, marked as [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] per Toshiba's marking specification in Rev. 1.0.A datasheet. Compliance aligns with Directive 2011/65/EU, and environmental details-including lead-free status and substance declarations-are available through Toshiba sales representatives or official product documentation for TRS24N65FB.