Toshiba Semiconductor and Storage TRS24N65FB,S1Q

Overview

TRS24N65FB from Toshiba Electronic Devices & Storage Corporation is a 650 V, 24 A dual-leg SiC Schottky barrier diode in TO-247 package, featuring low forward voltage (1.45 V typ. at 12 A), ultra-low reverse current (0.6 µA typ. at 650 V), and high surge capability (184 A peak for both legs). It is engineered for high-efficiency PFC stages and DC-DC converters in industrial power supplies.

For engineers reviewing the TRS24N65FB datasheet, TRS24N65FB pinout, TRS24N65FB application, or TRS24N65FB equivalent, key selection criteria include its dual-anode configuration, junction-to-case thermal resistance (0.65 °C/W for both legs), 46 pF typical junction capacitance per leg, and suitability for hard-switched 650 V systems requiring zero reverse recovery loss.

Technical Context

This device implements a second-generation SiC chip design with two independent anode terminals (Pin 1 and Pin 3) sharing a common cathode heatsink terminal (Pin 2). Its unipolar conduction eliminates reverse recovery charge, enabling operation at higher frequencies than silicon diodes without associated switching losses.

The dual-leg topology supports interleaved or parallel configurations in high-current PFC and isolated DC-DC topologies. Thermal performance is optimized via direct-mount cathode heatsinking (R_th(j-c) = 0.65 °C/W for both legs), and electrical robustness is ensured by 650 V repetitive blocking rating and 184 A non-repetitive surge current capability.

Key Specifications

Pinout & Package

Package: TO-247 (Toshiba designation 2-16L1A), 3-terminal through-hole, cathode tab electrically connected to Pin 2 and thermally optimized for heatsink mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with STPSC2065DL and C4D20065A, the TRS24N65FB uniquely integrates dual anodes and a common heatsink cathode in one package-reducing PCB copper area by 35%, eliminating external current-sharing resistors, and providing matched thermal impedance across both legs for balanced conduction.

Availability

TRS24N65FB is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for TRS24N65FB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with core expertise in SiC and advanced packaging.

The TRS24N65FB belongs to Toshiba's second-generation SiC Schottky diode product line, designed specifically for high-efficiency, high-reliability industrial power conversion where zero reverse recovery and thermal stability are mandatory.

FAQ

What is the maximum continuous junction temperature for the TRS24N65FB?

The TRS24N65FB has a maximum rated junction temperature (T_j) of 175 °C, validated under steady-state conditions with proper heatsinking. This rating enables operation in harsh ambient environments such as enclosed UPS cabinets or outdoor solar inverters, provided the thermal design maintains T_j ≤ 175 °C using the specified R_th(j-c) = 0.65 °C/W for both legs. Derating curves in the official Toshiba datasheet must be applied above 125 °C ambient.

Can the TRS24N65FB be used in parallel with another TRS24N65FB for higher current capacity?

No-TRS24N65FB is not intended for external paralleling because it already integrates two matched SiC dies in a single package with shared cathode thermal path. Attempting to parallel two TRS24N65FB units introduces imbalance risks due to parametric spread and unequal thermal coupling. For >24 A requirements, use the TRS24N65FB as designed: both anodes (Pins 1 and 3) can be driven independently or tied together with minimal trace length mismatch to ensure current sharing within ±5%.

Is the cathode terminal (Pin 2) electrically isolated from the package tab?

No-the cathode terminal (Pin 2) is directly bonded to the metal tab of the TO-247 package and is therefore electrically and thermally identical to the heatsink mounting surface. This design ensures minimal thermal resistance (R_th(j-c) = 0.65 °C/W for both legs) but requires electrical isolation of the heatsink from other circuit potentials unless system grounding architecture permits common-cathode referencing. Insulating pads or shoulder washers must be used if the heatsink is at a different potential.

Does the TRS24N65FB meet RoHS compliance requirements?

Yes-the TRS24N65FB is RoHS compliant, marked as [[G]]/RoHS COMPATIBLE per Toshiba's documentation. It conforms to Directive 2011/65/EU and contains lead-free terminations. The "[[G]]" marking on the device body indicates compliance, and full material declarations are available upon request from Toshiba's environmental compliance portal. No exemptions apply; Pb content is below 0.1 wt%.

What is the significance of the "FB" suffix in TRS24N65FB?

The "FB" suffix in TRS24N65FB denotes Toshiba's "Flat Base" variant of the TO-247 package, indicating a flat, non-ribbed metal tab optimized for uniform thermal contact with heatsinks and compatibility with standard TO-247 mounting hardware. This differs from legacy "AB" or "BB" variants with contoured tabs. The FB version ensures consistent mechanical interface and thermal performance across production lots, critical for automated assembly and thermal validation in high-volume power supply manufacturing.