Toshiba Semiconductor and Storage TRS2E65H,S1Q

Overview

TRS2E65H,S1Q from Toshiba Electronic Devices & Storage Corporation is a 650 V, 2 A silicon carbide Schottky barrier diode in TO-220-2L package, featuring VF = 1.2 V (typ.) at IF = 2 A, Qc = 6.5 nC (typ.) at VR = 400 V, and IR = 0.2 µA (typ.) at VR = 650 V, deployed in high-efficiency PFC stages of server power supplies.

For engineers reviewing the TRS2E65H,S1Q datasheet, TRS2E65H,S1Q pinout, TRS2E65H,S1Q application, or TRS2E65H,S1Q equivalent, key selection criteria include repetitive peak reverse voltage (650 V), thermal resistance (Rth(j-c) = 3.10 °C/W), low capacitive charge for hard-switching efficiency, and RoHS-compliant TO-220-2L mounting compatibility.

Technical Context

This SiC SBD uses third-generation chip design to achieve stable unipolar conduction with zero reverse recovery charge, enabling operation at higher frequencies than silicon diodes. Its low Qc and minimal IR support reduced switching losses and leakage-sensitive topologies like boost PFC.

The device operates with junction temperature up to 175 °C and requires heatsink mounting per TO-220-2L mechanical interface (Tc = 164 °C rating for IF(DC)). Thermal resistance from junction-to-case is 3.10 °C/W, confirming direct thermal path suitability for conduction-limited designs.

Key Specifications

Pinout & Package

Package: TO-220-2L (TOSHIBA designation 2-10AE1A), 1.9 g typical weight, isolated metal tab, screw-mount compatible with 0.6 N·m torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with STPSC2M065D and IXYS DSSK28-06AS, TRS2E65H,S1Q offers the lowest Qc and tightest VF distribution in TO-220-2L form factor, making it optimal for compact, high-frequency PFC where layout area and switching loss dominate trade-offs.

Availability

TRS2E65H,S1Q is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply, long-term lifecycle visibility, and RoHS-compliant sourcing.

Supply support for TRS2E65H,S1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with focus on reliability, efficiency, and industrial-grade robustness.

The TRS2E65H,S1Q belongs to Toshiba's third-generation SiC Schottky diode product line, engineered specifically for high-frequency, high-efficiency AC-DC and DC-DC conversion in enterprise and renewable energy infrastructure.

FAQ

What is the maximum junction temperature rating for TRS2E65H,S1Q?

The TRS2E65H,S1Q has a maximum junction temperature (Tj) rating of 175 °C, validated under continuous operation with case temperature (Tc) maintained at 164 °C. This rating enables deployment in thermally constrained environments such as sealed server PSUs or outdoor solar inverters. Derating curves in the official Toshiba datasheet (Rev.1.0.A) define safe operating area limits above 125 °C ambient.

Is TRS2E65H,S1Q pin-compatible with standard TO-220-2L silicon diodes?

Yes, TRS2E65H,S1Q uses the industry-standard TO-220-2L footprint and pinout: Pin 1 (tab) is cathode, Pin 2 is anode. It can directly replace legacy Si fast recovery diodes in existing layouts, provided thermal design accounts for lower VF and absence of reverse recovery, which may reduce heatsink requirements for the same power level.

Does TRS2E65H,S1Q require a gate driver or external control circuitry?

No, TRS2E65H,S1Q is a passive two-terminal device with no gate or control terminals. As a Schottky barrier diode, it conducts automatically when forward-biased and blocks when reverse-biased-no driver, biasing, or timing signals are needed. Its operation is fully defined by applied voltage polarity and magnitude relative to its VRRM and VF characteristics.

What is the thermal resistance from junction to case (Rth(j-c)) for TRS2E65H,S1Q?

The junction-to-case thermal resistance (Rth(j-c)) of TRS2E65H,S1Q is 3.10 °C/W, measured under Tc = 25 °C conditions. This value reflects the intrinsic thermal path through the SiC die, solder, and copper slug to the TO-220 tab. Actual system Rth(j-a) depends on heatsink interface quality and airflow, with max Rth(j-a) specified as 50 °C/W at Ta = 25 °C.

How does the total capacitive charge (Qc) of TRS2E65H,S1Q impact converter efficiency?

The TRS2E65H,S1Q exhibits Qc = 6.5 nC (typ.) at VR = 400 V, directly determining turn-off energy loss (E = ∫V × i dt ≈ VR × Qc). At 100 kHz switching, this yields ~0.26 mW of additional loss per cycle-significantly lower than Si FRDs (>20 nC). Lower Qc enables higher frequency operation without efficiency penalty, reducing magnetic size and improving dynamic response in PFC and DC-DC stages.