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Toshiba Semiconductor and Storage TRS3E65H,S1Q
- Part No.:
- TRS3E65H,S1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
TRS3E65H,S1Q.pdf
- Description:
- G3 SIC-SBD 650V 3A TO-220-2L
- Quantity:
- Payment:
- Shipping:
Inventory:388
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Product details
Overview
TRS3E65H from Toshiba Electronic Devices & Storage Corporation is a 650 V, 3 A silicon carbide Schottky barrier diode in TO-220-2L package, featuring VF = 1.2 V (typ.), Qc = 9 nC (typ.), and IR = 0.4 µA (typ.) at 650 V. It serves as a high-efficiency freewheeling or output rectifier in high-frequency switching power stages such as PFC boost converters and solar inverter DC-link circuits.
For engineers reviewing the TRS3E65H datasheet, TRS3E65H pinout, TRS3E65H application, or TRS3E65H equivalent, key selection criteria include its low capacitive charge for reduced switching loss, stable reverse leakage under high temperature, and thermal resistance of 2.70 °C/W (junction-to-case) enabling compact heatsink design in industrial-grade 1–3 kW power systems.
Technical Context
The TRS3E65H implements third-generation SiC chip design optimized for hard-switched topologies, delivering low forward voltage with minimal temperature coefficient and negligible reverse recovery charge. Its unipolar conduction mechanism eliminates minority-carrier storage delay, enabling operation up to 1 MHz without tail current.
Rated for repetitive peak reverse voltage of 650 V and continuous forward current of 3 A at case temperature Tc = 161 °C, the device supports junction temperatures up to 175 °C and exhibits guaranteed thermal resistance Rth(j-c) ≤ 2.70 °C/W - critical for thermally constrained board layouts in enclosed UPS or DC-DC converter enclosures.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - supports DC-link voltages up to 600 V nominal in single-phase PFC and 800 V bus designs with margin |
| IF(DC) | 3 A - rated continuous forward current at Tc = 161 °C, enabling use in 1–2 kW power stages without forced air |
| VF (typ.) | 1.2 V @ IF = 1.5 A - reduces conduction loss by ~30% vs. comparable Si fast recovery diodes |
| Qc (typ.) | 9 nC @ VR = 400 V - minimizes turn-off energy loss in high-frequency synchronous rectification |
| IR (typ.) | 0.4 µA @ VR = 650 V, Ta = 25 °C - ensures low standby loss and stable blocking in high-impedance gate drive circuits |
| Rth(j-c) | 2.70 °C/W - allows direct mounting to aluminum heatsinks with predictable thermal rise under 3 A load |
| PD | 28 W @ Tc = 25 °C - defines maximum steady-state power dissipation before thermal derating applies |
Pinout & Package
Package: TO-220-2L (Toshiba designation: 2-10AE1A), single-sided metal tab, isolated mounting hole, weight 1.9 g (typ.). Mounting torque: 0.6 N·m.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Tab side marking) | Cathode | Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits |
| 2 | Anode | Leads to internal SiC die anode; connects to switching node (e.g., MOSFET drain in boost PFC) |
Key Features
| Feature | Design Value |
|---|---|
| Third-generation SiC chip design | Enables lower VF drift over temperature and improved dynamic robustness versus earlier SiC SBDs |
| Low total capacitive charge (Qc) | 9 nC @ 400 V enables <10 ns turn-off transition in 500 kHz–1 MHz hard-switched converters |
| Low reverse leakage (IR) | 0.4 µA @ 650 V, 25 °C ensures minimal standby loss and stable voltage hold in high-impedance sensing paths |
| Junction temperature rating | 175 °C max allows operation in sealed industrial enclosures without active cooling |
| TO-220-2L mechanical standardization | Enables drop-in replacement of legacy Si diodes using same PCB footprint and heatsink interface |
Applications
| Power Factor Correction | Solar Inverters |
|---|---|
Use Scenario: Boost PFC stage in 1.5–2.5 kW AC-DC front-end for industrial SMPS. IC Role / Device Role / Timing Role: Output rectifier handling 3 A average current at 650 V DC-link, switching at 65–100 kHz. Use Value: Low Qc and VF reduce total losses by ≥1.2 W vs. Si FRD, improving system efficiency from 95.1% to 95.8% at full load. | Use Scenario: DC-link freewheeling path in string inverters with 600–800 V PV input. IC Role / Device Role / Timing Role: Anti-parallel diode for SiC MOSFETs in H-bridge output stage, conducting during dead-time intervals. Use Value: Near-zero reverse recovery eliminates shoot-through risk and EMI spikes, simplifying gate drive timing margins. |
| Uninterruptible Power Supplies | DC-DC Converters |
Use Scenario: Bidirectional DC-DC isolation stage in online UPS with 400 V battery bank and 380 V DC bus. IC Role / Device Role / Timing Role: Synchronous rectifier in LLC resonant converter secondary side, operating at 200–300 kHz. Use Value: Stable IR < 5 µA at 150 °C prevents thermal runaway during extended battery backup mode at elevated ambient. | Use Scenario: Isolated 48 V–12 V step-down converter in telecom server power supply. IC Role / Device Role / Timing Role: Secondary-side output rectifier in active clamp forward topology, conducting 3 A DC with 10 A surge peaks. Use Value: Rth(j-c) = 2.70 °C/W allows direct mounting to chassis without thermal pad, reducing BOM count and assembly cost. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky barrier diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPSC3065DL | 650 V / 3 A, VF = 1.35 V (typ.) @ 3 A, Qc = 11.5 nC @ 400 V, TO-220AC package | Higher VF increases conduction loss by ~0.45 W at 3 A; identical thermal resistance and pinout | Preferred where higher surge rating (IFSM = 100 A) is required over minimal VF advantage |
| IXYS DSSK30-06A | 600 V / 3 A dual common-cathode SiC SBD, VF = 1.45 V (typ.) @ 3 A, Qc = 13 nC @ 400 V, TO-247AD | Lower VRRM limits use to ≤540 V DC-link; dual configuration requires PCB redesign | Selected when dual-diode functionality or TO-247 mechanical robustness outweighs single-diode optimization |
Compared with STPSC3065DL and IXYS DSSK30-06A, the TRS3E65H delivers the lowest combined VF/Qc product in TO-220-2L format, making it optimal for space-constrained, high-frequency PFC and inverter designs where thermal interface simplicity and conduction loss minimization are prioritized.
Availability
TRS3E65H is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply across industrial production cycles.
Supply support for TRS3E65H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global distribution and automotive-qualified manufacturing lines.
The TRS3E65H belongs to Toshiba's third-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial and renewable energy systems.
FAQ
What is the maximum junction temperature rating for the TRS3E65H?
The TRS3E65H has a maximum junction temperature (Tj) rating of 175 °C, verified per Toshiba's Absolute Maximum Ratings table. This allows sustained operation in enclosed environments such as UPS cabinets or solar inverter enclosures where ambient temperatures exceed 70 °C. The TRS3E65H maintains stable electrical characteristics up to this limit, provided thermal design respects Rth(j-c) ≤ 2.70 °C/W and case temperature does not exceed 161 °C at full 3 A DC current.
Does the TRS3E65H have a documented pin-to-pin replacement for legacy silicon diodes?
Yes - the TRS3E65H uses the industry-standard TO-220-2L package with identical mechanical footprint and terminal layout as common Si fast recovery diodes like MUR460 or BYV26E. Its cathode-connected metal tab and anode lead match conventional mounting practices, enabling direct PCB replacement without layout changes, though thermal and electrical validation is required due to differing VF and Qc behavior.
What is the typical reverse leakage current of the TRS3E65H at elevated temperature?
The TRS3E65H exhibits IR = 0.4 µA (typ.) at VR = 650 V and Ta = 25 °C, rising to 45 µA (max) at VR = 650 V and Ta = 150 °C per Electrical Characteristics table. This controlled leakage profile ensures reliable blocking in high-temperature PFC and UPS applications, where excessive IR could cause thermal runaway in parallel configurations - a risk mitigated by the TRS3E65H's specified upper bound.
How does the TRS3E65H's total capacitive charge affect EMI in high-frequency converters?
The TRS3E65H's Qc = 9 nC (typ.) at VR = 400 V directly determines turn-off di/dt and associated high-frequency ringing amplitude. In 500 kHz boost PFC stages, this low Qc reduces dv/dt-induced common-mode noise by ~12 dB compared to Si FRDs with Qc > 30 nC, easing EMI filter sizing and compliance testing. The TRS3E65H's consistent Qc across temperature further stabilizes noise profile across operating conditions.
Is the TRS3E65H RoHS compliant and halogen-free?
Yes - the TRS3E65H carries [[G]]/RoHS COMPATIBLE marking per Toshiba's Marking section and complies with Directive 2011/65/EU. It is also halogen-free per JESD201A Class 1 requirements, confirmed in Toshiba's environmental documentation. The TRS3E65H meets lead-free reflow profiles (J-STD-020) and is suitable for automated SMT assembly when mounted via through-hole TO-220-2L process with appropriate thermal relief.
TRS3E65H,S1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 1.35 V @ 3 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 45 µA @ 650 V
- Capacitance @ Vr, F:
- 199pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-2L
- Operating Temperature - Junction:
- 175°C
TRS3E65H,S1Q FAQ
1.How can I place an order for TRS3E65H,S1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TRS3E65H,S1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TRS3E65H,S1Q reliable?
The price and inventory of TRS3E65H,S1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TRS3E65H,S1Q is usually 5 days.
3.What payment methods are accepted for TRS3E65H,S1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TRS3E65H,S1Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TRS3E65H,S1Q?
TRS3E65H,S1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TRS3E65H,S1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TRS3E65H,S1Q?
For technical support, including TRS3E65H,S1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TRS3E65H,S1Q requirements.
6.How does Aetrix verify that TRS3E65H,S1Q is sourced from the original manufacturer or authorized distributors?
All TRS3E65H,S1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TRS3E65H,S1Q meets industry standards.
7.What is the process for return or replacement of TRS3E65H,S1Q?
All TRS3E65H,S1Q units undergo pre-shipment inspection (PSI). If there is an issue with TRS3E65H,S1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TRS3E65H,S1Q part is unused and in its original packaging.
Return procedure for TRS3E65H,S1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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