Toshiba Semiconductor and Storage TRS4A65F,S1Q

Overview

TRS4A65F,S1Q from Toshiba Electronic Devices & Storage Corporation is a 650 V, 4 A silicon carbide Schottky barrier diode in TO-220F-2L package, featuring low forward voltage (1.45 V at 4 A), ultra-low reverse leakage (0.2 µA at 650 V), and high surge capability (37 A IFSM). It serves as a high-efficiency freewheeling or output rectifier in high-frequency switching power stages.

For engineers reviewing the TRS4A65F,S1Q datasheet, TRS4A65F,S1Q pinout, TRS4A65F,S1Q application, or TRS4A65F,S1Q equivalent, key selection criteria include junction capacitance (16 pF), thermal resistance (4.47 °C/W j-c), isolation rating (2000 V), and SiC-specific advantages for PFC and solar inverter designs requiring reduced conduction and switching losses.

Technical Context

This second-generation SiC SBD operates with zero reverse recovery charge (Qrr ≈ 0) and exhibits minimal temperature dependence of VF and IR-enabling stable performance across -55 °C to 175 °C junction range. Its low Cj (16 pF typ.) and fast turn-off support >100 kHz switching in hard-switched topologies.

The device uses an isolated TO-220F-2L package with metal tab tied to cathode, enabling direct heatsink mounting while maintaining 2000 V isolation between case and terminals. Thermal design must respect derated IF(DC) ≤ 3.2 A (80% of 4 A) for long-term reliability at Tj ≤ 140 °C.

Key Specifications

Pinout & Package

Package: TO-220F-2L (TOSHIBA 1-10B1A), isolated plastic housing with metal tab (cathode-connected), 1.83 g typical weight, 2000 V isolation rating, 0.6 N·m mounting torque.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with STPSC406D and C3D04065E, TRS4A65F,S1Q uniquely delivers certified 2000 V isolation in a standard TO-220 footprint-reducing BOM count and assembly steps in safety-critical 48–600 V power systems where creepage/clearance compliance is mandatory.

Availability

TRS4A65F,S1Q is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply, long-lifecycle assurance, and traceable sourcing from original manufacturer channels.

Supply support for TRS4A65F,S1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global distribution and automotive-grade quality systems.

The TRS4A65F,S1Q belongs to Toshiba's second-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in industrial and renewable energy systems.

FAQ

What is the maximum junction temperature rating for TRS4A65F,S1Q?

The absolute maximum junction temperature (Tj) for TRS4A65F,S1Q is 175 °C. However, Toshiba recommends limiting steady-state operation to ≤140 °C to ensure long-term reliability and prevent accelerated parameter drift. Derating curves in the datasheet show that IF(DC) must be reduced linearly above 25 °C ambient, and TRS4A65F,S1Q thermal resistance (Rth(j-c) = 4.47 °C/W) enables effective heatsinking to maintain this limit.

Does TRS4A65F,S1Q have a built-in isolation barrier, and what is its rating?

Yes, TRS4A65F,S1Q uses the TO-220F-2L package with reinforced isolation between the metal tab (cathode) and leads, rated at 2000 V for 1 second per IEC 60747-5-2. This eliminates the need for external insulating pads when mounting to grounded heatsinks-a key differentiator versus non-isolated TO-220AC variants. The isolation integrity is validated in production and documented in Toshiba's reliability reports for TRS4A65F,S1Q.

What is the typical forward voltage of TRS4A65F,S1Q at rated current?

The typical forward voltage (VF) of TRS4A65F,S1Q is 1.45 V at 4 A DC pulse test condition (Ta = 25 °C). At 2 A, VF drops to 1.2 V (typ.). This low VF-combined with near-zero Qrr-directly reduces conduction loss in high-frequency switching applications. Real-world measurements confirm TRS4A65F,S1Q maintains <1.6 V VF across its full operating temperature range.

Can TRS4A65F,S1Q replace silicon diodes in existing PFC designs without layout changes?

TRS4A65F,S1Q shares the same TO-220F-2L footprint and pinout as legacy silicon rectifiers, enabling drop-in replacement in many cases-but thermal and electrical validation is required. Due to its lower VF and zero Qrr, TRS4A65F,S1Q reduces heat generation and EMI, potentially allowing downsizing of heatsinks or filter components. Always verify gate drive timing, snubber requirements, and thermal margin when substituting TRS4A65F,S1Q into legacy silicon-based PFC circuits.

What is the reverse leakage current specification for TRS4A65F,S1Q at maximum rated voltage?

The typical reverse leakage current (IR) of TRS4A65F,S1Q is 0.2 µA at VR = 650 V and Ta = 25 °C. Maximum IR is 20 µA under the same conditions. Unlike silicon diodes, TRS4A65F,S1Q exhibits minimal temperature coefficient for IR-remaining below 1 µA even at 150 °C junction temperature-making it highly stable in high-voltage hold-off applications like solar string inverters and UPS DC links.