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Toshiba Semiconductor and Storage TRS4E65F,S1Q
- Part No.:
- TRS4E65F,S1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
TRS4E65F,S1Q.pdf
- Description:
- DIODE SIL CARB 650V 4A TO220-2L
- Quantity:
- Payment:
- Shipping:
Inventory:9,142
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Product details
Overview
TRS4E65F,S1Q from Toshiba Electronic Devices & Storage Corporation is a 650 V, 4 A silicon carbide Schottky barrier diode in TO-220-2L package, featuring low forward voltage (1.2 V @ 2 A), minimal reverse leakage (0.2 µA @ 650 V), and high surge capability (39 A IFSM). It serves as a high-efficiency freewheeling or output rectifier in high-frequency switching power stages for PFC, solar inverters, UPS, and DC-DC converters.
For engineers reviewing the TRS4E65F,S1Q datasheet, TRS4E65F,S1Q pinout, TRS4E65F,S1Q application, or TRS4E65F,S1Q equivalent, key selection criteria include its SiC-based zero-recovery behavior, junction capacitance of 16 pF at 650 V, thermal resistance of 2.7 °C/W (junction-to-case), and derating guidance for reliable operation up to 140 °C junction temperature.
Technical Context
This second-generation SiC Schottky diode eliminates reverse recovery charge and associated switching losses, enabling operation at higher frequencies than silicon counterparts. Its unipolar conduction mechanism delivers stable forward voltage across temperature and low capacitive turn-off characteristics.
The device is rated for repetitive peak reverse voltage of 650 V and continuous forward current of 4 A with a maximum junction temperature of 175 °C. Thermal design must account for Rth(j-c) = 2.7 °C/W and recommended Tj limit of 140 °C for long-term reliability under sustained load.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Withstands peak reverse voltage in high-voltage DC bus applications without breakdown. |
| IF(DC) | 4 A - Continuous forward current rating defining steady-state conduction capacity in rectifier paths. |
| VF(1) | 1.2 V @ 2 A - Low forward drop reduces conduction loss and improves system efficiency at typical operating point. |
| IR | 0.2 µA @ 650 V - Ultra-low reverse leakage minimizes standby power loss and thermal stress in high-VR conditions. |
| Cj | 16 pF @ 650 V, 1 MHz - Small junction capacitance enables fast voltage transition and reduced switching loss during turn-off. |
| IFSM | 39 A - Non-repetitive surge current capability supports short-duration fault transients without failure. |
| Rth(j-c) | 2.7 °C/W - Enables effective heat transfer to heatsink; requires mechanical mounting torque of 0.6 N·m for optimal thermal contact. |
Pinout & Package
Package: TO-220-2L (TOSHIBA designation 2-10AE1A), single-diode configuration with isolated tab (cathode-connected case).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | High-side connection point; electrically tied to metal tab-must be insulated from heatsink unless referenced to system ground. |
| 2 | Anode | Low-side terminal; connects to return path or switching node; no internal connection to package tab. |
Key Features
| Feature | Design Value |
|---|---|
| SiC Schottky architecture | Zero reverse recovery charge (Qrr = 0) eliminates switching loss and EMI from diode snap-off. |
| Second-generation chip design | Improved robustness against surge and thermal cycling versus first-gen SiC diodes. |
| Low Cj and IR | 16 pF capacitance and 0.2 µA leakage jointly reduce dynamic loss and leakage-related heating at high VR. |
| High IFSM rating | 39 A surge capability supports inrush and fault-current handling in industrial-grade power supplies. |
Applications
| Power Factor Correction | Solar Inverters |
|---|---|
Use Scenario: Boost-stage output rectification in AC-DC front-end converters operating at 50–100 kHz. IC Role / Device Role / Timing Role: Freewheeling diode conducting during MOSFET off-time; critical for maintaining continuous conduction mode. Use Value: Low VF and zero Qrr reduce conduction + switching losses, enabling >98% PFC efficiency at full load. |
Use Scenario: DC-link or MPPT-stage rectification in string or central solar inverters with 600–1000 V DC bus. IC Role / Device Role / Timing Role: High-voltage output diode in boost or buck-boost stages; operates under wide ambient temperature swings. Use Value: Stable 0.2 µA IR at 650 V minimizes leakage-induced power loss and thermal runaway risk in desert deployments. |
| Uninterruptible Power Supplies | DC-DC Converters |
Use Scenario: Battery-charging rectifier and inverter output stage in double-conversion online UPS systems. IC Role / Device Role / Timing Role: Bidirectional conduction path during battery backup mode; handles high peak currents during load transients. Use Value: 39 A IFSM withstands 10 ms surges during generator start-up or short-circuit recovery without degradation. |
Use Scenario: Synchronous rectifier replacement in isolated flyback or LLC resonant DC-DC modules for telecom and server PSUs. IC Role / Device Role / Timing Role: Secondary-side unidirectional rectifier; selected for low Cj to minimize ringing and EMI at >300 kHz switching. Use Value: 16 pF Cj at 650 V reduces capacitive turn-off energy and allows tighter gate drive timing margins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D04065E (Wolfspeed) | Same 650 V/4 A rating; VF = 1.5 V @ 4 A (higher than TRS4E65F,S1Q's 1.45 V); Rth(j-c) = 3.0 °C/W. | Slightly higher conduction loss and thermal resistance; suitable where footprint compatibility outweighs efficiency optimization. | Select when standard industry footprint alignment with Wolfspeed's TO-220AB variant is required. |
| STPSC4H065DL3 (STMicroelectronics) | 650 V/4 A; VF = 1.35 V @ 4 A; Cj = 18 pF @ 650 V; RoHS-compliant but not halogen-free per Toshiba's [[G]] marking. | Higher Cj increases turn-off loss marginally; identical thermal and surge specs support drop-in evaluation. | Prefer when leveraging ST's ecosystem tools or requiring halogen-free exemption waivers. |
Compared with C3D04065E and STPSC4H065DL3, TRS4E65F,S1Q offers the lowest VF at 2 A (1.2 V), smallest Cj (16 pF), and tightest thermal resistance (2.7 °C/W), making it optimal for thermally constrained, high-efficiency designs where minimal conduction and capacitive loss are prioritized.
Availability
TRS4E65F,S1Q is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply, long-lifecycle assurance, and traceable sourcing from authorized channels.
Supply support for TRS4E65F,S1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on industrial reliability and energy efficiency.
The TRS4E65F,S1Q belongs to Toshiba's second-generation SiC Schottky diode product line, engineered specifically for high-voltage, high-frequency power conversion systems demanding zero-recovery performance and thermal resilience.
FAQ
What is the maximum junction temperature rating for TRS4E65F,S1Q?
The absolute maximum junction temperature for TRS4E65F,S1Q is 175 °C, but Toshiba recommends limiting operating junction temperature to 140 °C for high-reliability designs. This derating ensures long-term stability of forward voltage, reverse leakage, and surge capability over the device's lifetime. TRS4E65F,S1Q thermal resistance (junction-to-case) is 2.7 °C/W, so heatsink selection must reflect this constraint.
Does TRS4E65F,S1Q have a built-in thermal protection feature?
No, TRS4E65F,S1Q is a passive discrete diode without integrated thermal sensing or shutdown circuitry. Thermal management relies entirely on external heatsinking and system-level monitoring. The device's Rth(j-c) = 2.7 °C/W and specified mounting torque (0.6 N·m) are critical for achieving safe junction temperatures. TRS4E65F,S1Q must be used within its absolute maximum ratings, including Tj ≤ 175 °C.
Is TRS4E65F,S1Q RoHS compliant?
Yes, TRS4E65F,S1Q carries the [[G]]/RoHS COMPATIBLE marking per Toshiba documentation, confirming compliance with Directive 2011/65/EU. It contains lead-free terminations and meets restrictions on cadmium, mercury, hexavalent chromium, PBB, and PBDE. TRS4E65F,S1Q is also labeled [[G]]/RoHS [[Pb]], indicating lead content is within allowable exemptions.
What is the significance of the "S1Q" suffix in TRS4E65F,S1Q?
The "S1Q" suffix denotes Toshiba's tape-and-reel packaging variant for automated surface-mount assembly, though TRS4E65F,S1Q remains a through-hole TO-220-2L device. It indicates moisture sensitivity level (MSL) 1, no bake requirement, and standard reel quantity (typically 50 pcs/reel). TRS4E65F,S1Q shares identical electrical and thermal specifications with the base TRS4E65F part.
Can TRS4E65F,S1Q replace a silicon fast recovery diode in an existing design?
Yes, TRS4E65F,S1Q can directly replace silicon FRDs in high-frequency switching applications-but only after verifying layout adaptations. Its zero Qrr eliminates snubber circuits, yet its lower VF and Cj may alter gate drive dynamics and EMI profiles. TRS4E65F,S1Q requires insulated mounting due to cathode-tab construction, unlike many silicon diodes with isolated tabs. System-level validation is essential.
TRS4E65F,S1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 4A
- Voltage - Forward (Vf) (Max) @ If:
- 1.6 V @ 4 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 20 µA @ 650 V
- Capacitance @ Vr, F:
- 16pF @ 650V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-2L
- Operating Temperature - Junction:
- 175°C (Max)
TRS4E65F,S1Q FAQ
1.How can I place an order for TRS4E65F,S1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TRS4E65F,S1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TRS4E65F,S1Q reliable?
The price and inventory of TRS4E65F,S1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TRS4E65F,S1Q is usually 5 days.
3.What payment methods are accepted for TRS4E65F,S1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TRS4E65F,S1Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TRS4E65F,S1Q?
TRS4E65F,S1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TRS4E65F,S1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TRS4E65F,S1Q?
For technical support, including TRS4E65F,S1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TRS4E65F,S1Q requirements.
6.How does Aetrix verify that TRS4E65F,S1Q is sourced from the original manufacturer or authorized distributors?
All TRS4E65F,S1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TRS4E65F,S1Q meets industry standards.
7.What is the process for return or replacement of TRS4E65F,S1Q?
All TRS4E65F,S1Q units undergo pre-shipment inspection (PSI). If there is an issue with TRS4E65F,S1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TRS4E65F,S1Q part is unused and in its original packaging.
Return procedure for TRS4E65F,S1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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