My Inquiry
My Account
Toshiba Semiconductor and Storage TRS4E65H,S1Q
- Part No.:
- TRS4E65H,S1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
TRS4E65H,S1Q.pdf
- Description:
- G3 SIC-SBD 650V 4A TO-220-2L
- Quantity:
- Payment:
- Shipping:
Inventory:341
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
TRS4E65H from Toshiba Electronic Devices & Storage Corporation is a 650 V, 4 A silicon carbide Schottky barrier diode in TO-220-2L package, featuring VF = 1.2 V (typ.), Qc = 12 nC (typ.), and IR = 0.6 µA (typ.). It serves as a high-efficiency freewheeling or output rectifier in high-frequency switching power stages such as PFC boost converters and solar inverter DC-link circuits.
For engineers reviewing the TRS4E65H datasheet, TRS4E65H pinout, TRS4E65H application, or TRS4E65H equivalent, key selection criteria include its low forward voltage at 4 A, minimal capacitive charge for reduced switching loss, robust 650 V reverse blocking capability, and thermal resistance of 2.50 °C/W (junction-to-case) under rated conditions.
Technical Context
The TRS4E65H implements a third-generation SiC Schottky die architecture optimized for high-voltage, medium-current power conversion. Its unipolar conduction mechanism eliminates minority-carrier storage delay, enabling zero reverse recovery charge (Qrr ≈ 0) and stable switching behavior across temperature.
Designed for hard-switched topologies operating up to 100 kHz, it maintains low IR (< 0.6 µA typ. at VR = 650 V, Ta = 25 °C) and predictable Ct (263 pF typ. at VR = 1 V, f = 1 MHz), supporting consistent EMI performance and snubber design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Sustains full DC-link voltage in 400–600 V bus applications without avalanche stress |
| IF(DC) | 4 A - Continuous conduction rating at TC = 158 °C, suitable for compact heatsink designs |
| VF @ 4 A | 1.2 V (typ.) - Reduces forward conduction loss by ~30% vs. comparable Si fast recovery diodes |
| Qc @ 400 V | 12 nC (typ.) - Limits turn-off energy loss in high-frequency DC-DC and inverter stages |
| IR @ 650 V | 0.6 µA (typ.) - Enables stable operation at elevated temperatures with negligible leakage impact |
| Rth(j-c) | 2.50 °C/W - Allows direct mounting to heatsink with predictable junction temperature rise under load |
Pinout & Package
Package: TO-220-2L (Toshiba designation: 2-10AE1A), single-ended through-hole, isolated tab, weight 1.9 g (typ.). Mounting torque: 0.6 N·m.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Tab) | Cathode | Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits |
| 2 | Anode | Lead-frame terminal for anode connection; requires PCB trace routing compatible with 4 A continuous current |
Key Features
| Feature | Design Value |
|---|---|
| Third-generation SiC Schottky die | Improved uniformity and edge termination for higher reliability under repetitive surge stress (IFSM = 14 A) |
| Low VF at rated current | 1.2 V typ. at IF = 4 A reduces conduction loss by >1.5 W vs. Si FRD equivalents in 100 kHz PFC stages |
| Negligible Qrr | Zero reverse recovery charge eliminates switching loss spikes and associated EMI in hard-switched converters |
| High Tj rating | 175 °C maximum junction temperature supports operation in sealed industrial enclosures without derating |
Applications
| Power Factor Correction | Solar Inverters |
|---|---|
Use Scenario: Boost PFC stage in 1–3 kW AC-DC front-end for server PSUs or industrial drives. IC Role / Device Role / Timing Role: Output rectifier handling high-frequency (50–100 kHz), discontinuous/continuous conduction mode currents. Use Value: Low Qc (12 nC) and zero Qrr reduce total switching loss by ~40% versus Si alternatives, improving efficiency above 98% at full load. | Use Scenario: DC-link freewheeling path in string inverters with 600 V nominal bus voltage. IC Role / Device Role / Timing Role: Anti-parallel diode for SiC MOSFET half-bridge legs, conducting during dead-time and reactive power flow. Use Value: Stable IR < 0.6 µA at 650 V and 150 °C ensures minimal leakage contribution to thermal runaway risk in unventilated outdoor enclosures. |
| Uninterruptible Power Supplies | DC-DC Converters |
Use Scenario: Bidirectional DC-DC isolation stage in online UPS systems with battery backup and grid synchronization. IC Role / Device Role / Timing Role: High-side synchronous rectifier in dual-active-bridge topology operating at 100–200 kHz. Use Value: VF = 1.2 V (typ.) at 4 A enables >97% peak efficiency while maintaining thermal margin on small heatsinks due to Rth(j-c) = 2.50 °C/W. | Use Scenario: Secondary-side output rectifier in isolated 48 V–12 V telecom DC-DC modules. IC Role / Device Role / Timing Role: Fast-recovery replacement for Si Schottky diodes in high-density, forced-air-cooled modules. Use Value: 650 V VRRM provides 2× voltage margin over 400 V transients, eliminating need for TVS clamping in cost-sensitive designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPSC406D | Same VRRM (650 V), IF(DC) = 4 A, VF = 1.35 V (max), Qc = 14 nC (typ.), TO-220AC package | Higher VF max and Qc reduce efficiency margin in high-frequency PFC; identical thermal interface but different pinout orientation | Prefer TRS4E65H where VF consistency and lower Qc are critical; STPSC406D acceptable if layout accommodates alternate lead spacing |
| IXYS DSSK40-06A | Dual-die TO-247 package, 650 V/4 A per diode, VF = 1.45 V (max), Qc = 18 nC (typ.), includes integrated thermal pad | Higher footprint and cost; intended for dual-phase or interleaved designs requiring matched pairs | TRS4E65H offers better cost-per-watt and simpler thermal management for single-channel use; DSSK40-06A only when dual-diode integration is required |
Compared with STPSC406D and DSSK40-06A, the TRS4E65H delivers superior conduction efficiency (lower VF typ.) and lower switching loss (reduced Qc), making it optimal for space-constrained, thermally limited 1–3 kW PFC and inverter applications where single-diode simplicity is prioritized.
Availability
TRS4E65H is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply, long-term industrial lifecycle support, and RoHS-compliant sourcing.
Supply support for TRS4E65H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and industrial-grade qualification.
The TRS4E65H belongs to Toshiba's third-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-frequency AC-DC and DC-DC conversion in renewable energy and industrial power systems.
FAQ
What is the maximum junction temperature rating for the TRS4E65H?
The TRS4E65H has a maximum junction temperature (Tj) rating of 175 °C, verified per Toshiba's absolute maximum ratings table. This allows sustained operation in high-ambient environments such as enclosed UPS cabinets or rooftop solar inverters. Derating is required above Tc = 158 °C per the datasheet's thermal curves, and the device must be mounted with proper thermal interface material to maintain safe Tj under full IF(DC) load.
Does the TRS4E65H have a specified reverse recovery charge (Qrr)?
No - the TRS4E65H is a unipolar SiC Schottky diode and exhibits no minority-carrier storage; therefore, its reverse recovery charge (Qrr) is effectively zero. The datasheet specifies total capacitive charge (Qc = 12 nC typ. at VR = 400 V), which governs turn-off energy loss. This absence of Qrr eliminates switching spikes and EMI associated with Si fast recovery diodes in hard-switched topologies.
What is the thermal resistance from junction to case (Rth(j-c)) for the TRS4E65H?
The TRS4E65H has a maximum thermal resistance of 2.50 °C/W from junction to case (Rth(j-c)), measured under standard mounting conditions (Note 1, Tc = 25 °C). This value enables accurate junction temperature estimation when the case temperature is monitored, supporting thermal design validation for convection- or forced-air-cooled power supplies without requiring complex simulation.
Is the TRS4E65H RoHS compliant?
Yes - the TRS4E65H is marked [[G]]/RoHS COMPATIBLE per Toshiba's documentation, confirming compliance with Directive 2011/65/EU. Lead-free soldering is supported, and the device meets JEDEC J-STD-020 moisture sensitivity level (MSL) requirements for standard reflow profiles. Full environmental compliance data, including substance declarations, is available via Toshiba's official product page or authorized distributor portals.
What is the recommended mounting torque for the TRS4E65H TO-220-2L package?
The recommended mounting torque for the TRS4E65H TO-220-2L package is 0.6 N·m, as specified in the Absolute Maximum Ratings table. Exceeding this torque risks mechanical damage to the lead frame or internal die attach, while insufficient torque degrades thermal transfer from the cathode tab to the heatsink. Use a calibrated torque screwdriver and follow Toshiba's mechanical installation guidelines to ensure reliable long-term thermal performance.
TRS4E65H,S1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 4A
- Voltage - Forward (Vf) (Max) @ If:
- 1.35 V @ 4 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 55 µA @ 650 V
- Capacitance @ Vr, F:
- 263pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-2L
- Operating Temperature - Junction:
- 175°C
TRS4E65H,S1Q FAQ
1.How can I place an order for TRS4E65H,S1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TRS4E65H,S1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TRS4E65H,S1Q reliable?
The price and inventory of TRS4E65H,S1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TRS4E65H,S1Q is usually 5 days.
3.What payment methods are accepted for TRS4E65H,S1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TRS4E65H,S1Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TRS4E65H,S1Q?
TRS4E65H,S1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TRS4E65H,S1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TRS4E65H,S1Q?
For technical support, including TRS4E65H,S1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TRS4E65H,S1Q requirements.
6.How does Aetrix verify that TRS4E65H,S1Q is sourced from the original manufacturer or authorized distributors?
All TRS4E65H,S1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TRS4E65H,S1Q meets industry standards.
7.What is the process for return or replacement of TRS4E65H,S1Q?
All TRS4E65H,S1Q units undergo pre-shipment inspection (PSI). If there is an issue with TRS4E65H,S1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TRS4E65H,S1Q part is unused and in its original packaging.
Return procedure for TRS4E65H,S1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
TRS4E65H,S1Q Tags
-
1N4448X-TP
Micro Commercial Co
-
1N4148WX-TP
Micro Commercial Co
-
1N4148TR
onsemi
-
MMSD4148T1G
onsemi
-
MMBD914LT3G
onsemi
-
BAS16HT1G
onsemi
-
1N914BWT
onsemi
-
BAS21LT1G
onsemi
-
LL4148
onsemi
-
BAS16LT1G
onsemi
-
MMSD914T1G
onsemi
-
BAV21W-7-F
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
