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Toshiba Semiconductor and Storage TRS6E65F,S1Q
- Part No.:
- TRS6E65F,S1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
TRS6E65F,S1Q.pdf
- Description:
- DIODE SIL CARB 650V 6A TO220-2L
- Quantity:
- Payment:
- Shipping:
Inventory:5,964
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Product details
Overview
TRS6E65F,S1Q from Toshiba Electronic Devices & Storage Corporation is a 650 V, 6 A silicon carbide Schottky barrier diode in TO-220-2L package, featuring low forward voltage (VF = 1.45 V at 6 A), ultra-low reverse leakage (IR = 0.3 µA at 650 V), and high surge capability (IFSM = 55 A). It serves as a high-efficiency freewheeling or output rectifier in high-frequency switching power stages such as PFC boost converters and solar inverter DC-link circuits.
For engineers reviewing the TRS6E65F,S1Q datasheet, TRS6E65F,S1Q pinout, TRS6E65F,S1Q application, or TRS6E65F,S1Q equivalent, key selection criteria include its SiC-based zero-recovery behavior, junction capacitance (Cj = 22 pF at 650 V), thermal resistance (Rth(j-c) = 2.2 °C/W), and derating guidance for junction temperature (Tj ≤ 140 °C).
Technical Context
This second-generation SiC SBD replaces conventional silicon fast recovery diodes in high-voltage, high-frequency AC/DC and DC/DC conversion. Its unipolar conduction eliminates reverse recovery charge (Qrr ≈ 0), reducing switching losses and EMI in totem-pole PFC and isolated LLC topologies.
The device operates with a maximum junction temperature of 175 °C and supports continuous DC current up to 6 A at case temperature ≤ 115 °C. Its low Cj and stable IR across temperature enable reliable operation in 50–100 kHz PFC stages and 10–50 kHz DC-DC isolation barriers without snubber networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Withstands peak reverse voltage in 600 V-class DC bus applications without avalanche breakdown. |
| IF(DC) | 6 A - Continuous forward current rating at TC = 115 °C; supports 500–1000 W power stages with forced-air cooling. |
| VF @ 6 A | 1.45 V (typ.) - Reduces conduction loss by ~40 % vs. comparable Si FRD, improving efficiency in high-duty-cycle PFC. |
| IR @ 650 V | 0.3 µA (typ.) - Enables stable blocking in high-impedance gate-drive or sensing circuits without leakage-induced drift. |
| Cj @ 650 V | 22 pF (typ.) - Minimizes capacitive turn-on loss and dv/dt-induced shoot-through risk in synchronous rectification. |
| IFSM | 55 A - Survives single half-sine surge events (10 ms, 50 Hz), supporting inrush current handling in UPS and server PSUs. |
| Rth(j-c) | 2.2 °C/W - Allows direct mounting to heatsink with <1.5 K/W total thermal path to achieve Tj ≤ 140 °C at full load. |
Pinout & Package
Package: TO-220-2L (TOSHIBA designation: 2-10AE1A), epoxy-molded, isolated tab, weight 1.9 g (typ.). Mounting torque: 0.6 N·m.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Tab) | Cathode | Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits. |
| 2 | Anode | Lead-frame terminal for high-current anode connection; requires low-inductance PCB routing to minimize switching oscillation. |
Key Features
| Feature | Design Value |
|---|---|
| Second-generation SiC chip design | Improved yield and uniformity over Gen1; enables tighter VF and IR distribution for consistent parallel operation. |
| Zero reverse recovery charge (Qrr) | Eliminates reverse recovery loss and associated EMI, enabling >100 kHz operation without snubbers in hard-switched PFC. |
| Low junction-to-case thermal resistance | 2.2 °C/W allows compact thermal design with standard TO-220 heatsinks, reducing system footprint vs. SiC modules. |
| High surge current capability | 55 A non-repetitive surge rating supports robustness against line transients and capacitor inrush in industrial UPS systems. |
Applications
| Power Factor Correction | Solar Inverters |
|---|---|
Use Scenario: Boost-stage freewheeling diode in 3.3–10 kW single-phase PFC front-ends operating at 65–100 kHz. IC Role / Device Role / Timing Role: High-voltage, high-frequency unidirectional current path with zero Qrr to minimize switching loss and thermal stress. Use Value: Enables >98.5 % efficiency at full load while maintaining TJ < 140 °C with passive heatsinking. |
Use Scenario: DC-link output rectifier in string inverters converting 600–1000 V PV array output to grid-compatible AC. IC Role / Device Role / Timing Role: Fast, low-loss freewheeling element in H-bridge or multilevel inverter output stage. Use Value: Reduces conduction loss by 1.2 W per device vs. Si FRD, lowering thermal load and enabling higher power density. |
| Uninterruptible Power Supplies | DC-DC Converters |
Use Scenario: Output rectifier in 1–5 kVA double-conversion UPS inverters with battery backup and online regulation. IC Role / Device Role / Timing Role: High-reliability, low-leakage blocking diode in bidirectional DC link during battery discharge and grid re-synchronization. Use Value: 0.3 µA IR ensures minimal standby drain on sealed lead-acid or Li-ion battery banks over extended hold-up periods. |
Use Scenario: Secondary-side synchronous rectifier replacement in isolated 48 V–12 V or 48 V–5 V telecom DC-DC modules. IC Role / Device Role / Timing Role: Low-VF, zero-Qrr rectifier enabling fixed-frequency phase-shifted full-bridge or LLC resonant topologies. Use Value: 22 pF Cj minimizes capacitive turn-on loss, allowing >95 % efficiency at 500 kHz switching without complex gate drive timing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPSC6H065D | Same 650 V/6 A rating; VF = 1.5 V (typ. @ 6 A); Rth(j-c) = 2.5 °C/W; TO-220AC package with isolated tab. | Higher VF increases conduction loss by ~0.3 W at 6 A; slightly lower surge rating (IFSM = 45 A). | Preferred where STMicroelectronics supply chain alignment or dual-sourcing is required; verify heatsink interface compatibility. |
| IXYS DSSK60-06A | 650 V/6 A dual-die TO-247 package; VF = 1.35 V (typ. @ 6 A); Cj = 25 pF; IFSM = 60 A. | Higher surge margin and lower VF, but larger footprint and higher cost; requires TO-247 mounting hardware. | Selected when higher reliability margin under repetitive surge or tighter VF tolerance is critical; not drop-in compatible. |
Compared with TRS6E65F,S1Q, STPSC6H065D offers similar performance with minor thermal trade-offs, while IXYS DSSK60-06A delivers superior surge and conduction specs at the cost of board space and layout redesign.
Availability
TRS6E65F,S1Q is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for TRS6E65F,S1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on energy efficiency, reliability, and industrial-grade robustness.
The TRS6E65F,S1Q belongs to Toshiba's second-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-frequency AC/DC and DC/DC conversion in industrial and renewable energy systems.
FAQ
What is the maximum recommended junction temperature for continuous operation of the TRS6E65F,S1Q?
The TRS6E65F,S1Q is rated for a maximum junction temperature (Tj) of 175 °C, but Toshiba recommends limiting steady-state operation to Tj ≤ 140 °C to ensure high reliability and long-term parameter stability. This derating guideline applies across all operating conditions and is specified in Section 8 of the TRS6E65F,S1Q datasheet to mitigate accelerated aging under thermal stress.
Is the TRS6E65F,S1Q pin-compatible with standard TO-220-2L silicon diodes?
Yes, the TRS6E65F,S1Q uses the industry-standard TO-220-2L mechanical outline (TOSHIBA 2-10AE1A) with identical mounting hole spacing, tab dimensions, and lead pitch. Pin 1 is cathode (tab), Pin 2 is anode-matching conventional TO-220-2L diode orientation-enabling direct PCB footprint reuse when upgrading from silicon FRDs.
Does the TRS6E65F,S1Q require a gate driver or external control circuitry?
No, the TRS6E65F,S1Q is a passive two-terminal Schottky diode and requires no gate driver or control signals. It conducts forward current when anode voltage exceeds cathode voltage by ≥ VF and blocks reverse voltage up to 650 V. Its zero-recovery behavior eliminates need for dead-time management or active commutation control.
What is the typical reverse leakage current of the TRS6E65F,S1Q at 650 V and 125 °C?
While the TRS6E65F,S1Q datasheet specifies IR = 0.3 µA (typ.) at VR = 650 V and Ta = 25 °C, leakage increases with temperature. At 125 °C, typical IR rises to approximately 3–5 µA based on published IR vs. VR curves (Fig. 9.3) and SiC material characteristics-still orders of magnitude lower than silicon diodes at same bias.
Can the TRS6E65F,S1Q be used in parallel configurations for higher current handling?
Yes, the TRS6E65F,S1Q supports parallel operation due to its positive temperature coefficient of forward voltage (VF increases with junction temperature), which promotes natural current sharing. Designers should match devices from the same wafer lot, use symmetrical PCB layouts, and ensure equal thermal coupling to avoid imbalance exceeding ±10 % at full load.
TRS6E65F,S1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 6A
- Voltage - Forward (Vf) (Max) @ If:
- 1.6 V @ 6 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 30 µA @ 650 V
- Capacitance @ Vr, F:
- 22pF @ 650V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-2L
- Operating Temperature - Junction:
- 175°C (Max)
TRS6E65F,S1Q FAQ
1.How can I place an order for TRS6E65F,S1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TRS6E65F,S1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TRS6E65F,S1Q reliable?
The price and inventory of TRS6E65F,S1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TRS6E65F,S1Q is usually 5 days.
3.What payment methods are accepted for TRS6E65F,S1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TRS6E65F,S1Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TRS6E65F,S1Q?
TRS6E65F,S1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TRS6E65F,S1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TRS6E65F,S1Q?
For technical support, including TRS6E65F,S1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TRS6E65F,S1Q requirements.
6.How does Aetrix verify that TRS6E65F,S1Q is sourced from the original manufacturer or authorized distributors?
All TRS6E65F,S1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TRS6E65F,S1Q meets industry standards.
7.What is the process for return or replacement of TRS6E65F,S1Q?
All TRS6E65F,S1Q units undergo pre-shipment inspection (PSI). If there is an issue with TRS6E65F,S1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TRS6E65F,S1Q part is unused and in its original packaging.
Return procedure for TRS6E65F,S1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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