Toshiba Semiconductor and Storage TRS6E65H,S1Q

Overview

TRS6E65H from Toshiba Electronic Devices & Storage Corporation is a 650 V, 6 A silicon carbide Schottky barrier diode in TO-220-2L package, featuring VF = 1.2 V (typ.) at IF = 6 A, Qc = 17 nC (typ.) at VR = 400 V, and IR = 1.1 µA (typ.) at VR = 650 V, deployed in high-efficiency PFC stages of industrial power supplies.

For engineers reviewing the TRS6E65H datasheet, TRS6E65H pinout, TRS6E65H application, or TRS6E65H equivalent, key selection criteria include its 650 V VRRM rating, low Qc for reduced switching loss in hard-switched topologies, thermal resistance Rth(j-c) = 2.20 °C/W, and RoHS-compliant TO-220-2L mechanical interface.

Technical Context

This SiC SBD uses third-generation chip design to achieve stable unipolar conduction with near-zero reverse recovery charge, eliminating tail current and enabling operation at higher frequencies than silicon diodes. Its low VF and low Qc directly reduce conduction and capacitive switching losses in continuous conduction mode (CCM) PFC boost converters.

The device is rated for junction temperature up to 175 °C and features guaranteed Rth(j-c) ≤ 2.20 °C/W under Tc = 25 °C, supporting high-power-density thermal management when mounted on heatsinks with controlled torque (0.6 N·m). It is not rated for avalanche energy or repetitive surge beyond IFSM = 18 A (10 ms half-sine).

Key Specifications

Pinout & Package

TRS6E65H is housed in a TO-220-2L package (Toshiba designation: 2-10AE1A), with metal tab electrically connected to cathode. Mounting torque must be controlled at 0.6 N·m to ensure mechanical integrity and thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with STPSC6H065D and IXYS DSSK60-06A, TRS6E65H delivers the lowest combined VF/Qc product in TO-220-2L form factor, making it optimal for space-constrained 3–5 kW PFC and solar inverter designs where thermal resistance and switching loss are critical.

Availability

TRS6E65H is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TRS6E65H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with focus on reliability, efficiency, and industrial-grade robustness.

The TRS6E65H belongs to Toshiba's third-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-temperature power conversion in industrial and renewable energy systems.

FAQ

What is the maximum junction temperature rating for TRS6E65H?

The TRS6E65H has a maximum junction temperature (Tj) rating of 175 °C, verified per Toshiba's Absolute Maximum Ratings table. This enables operation in high-ambient environments such as enclosed solar inverter cabinets or industrial UPS enclosures. Derating curves in the datasheet confirm sustained 6 A DC current capability at Tc = 153 °C, and thermal resistance Rth(j-c) is specified at 2.20 °C/W. The TRS6E65H must be mounted with 0.6 N·m torque to maintain this thermal performance.

Is TRS6E65H pin-compatible with standard TO-220-2L diodes?

Yes, TRS6E65H uses the industry-standard TO-220-2L footprint and pinout: Pin 1 is the cathode-connected metal tab, and Pin 2 is the anode lead. It shares identical mechanical dimensions and mounting hole pattern with legacy silicon diodes in the same package, allowing direct PCB layout reuse. However, due to its SiC-specific electrical behavior-especially zero reverse recovery-the TRS6E65H may require gate drive timing adjustments in synchronous rectifier circuits originally designed for silicon diodes.

What is the typical reverse leakage current of TRS6E65H at full rated voltage?

The typical reverse leakage current (IR) of TRS6E65H is 1.1 µA at VR = 650 V and Ta = 25 °C, as measured per the Electrical Characteristics table. At elevated temperature (Ta = 150 °C), IR rises to 70 µA (max), remaining well below silicon diode levels. This low IR supports high-efficiency operation in standby and light-load conditions common in UPS and solar inverter hold-up circuits, where TRS6E65H helps minimize no-load power loss.

Does TRS6E65H meet RoHS requirements?

Yes, TRS6E65H is RoHS-compliant per Directive 2011/65/EU, as confirmed in the Marking section of the datasheet. Each unit is marked with [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]], indicating lead-free termination and restricted substance compliance. Toshiba provides full material declarations upon request, and the TRS6E65H is suitable for use in consumer, industrial, and renewable energy equipment sold in EU markets requiring RoHS certification.

What is the thermal resistance from junction to case for TRS6E65H?

The maximum thermal resistance from junction to case (Rth(j-c)) for TRS6E65H is 2.20 °C/W, measured under Tc = 25 °C per the Thermal Characteristics table. This value reflects direct conduction path efficiency from die to metal tab and is critical for heatsink sizing. When mounted with proper 0.6 N·m torque and clean thermal interface, the TRS6E65H achieves predictable thermal performance in high-power-density designs such as compact PFC modules where the TRS6E65H operates continuously at 6 A.