Toshiba Semiconductor and Storage TRS6V65H,LQ

Overview

TRS6V65H from Toshiba Electronic Devices & Storage Corporation is a 650 V, 6 A silicon carbide Schottky barrier diode in DFN8x8 package, featuring VF = 1.2 V (typ. at IF = 6 A), Qc = 17 nC (typ. at VR = 400 V), IR = 1.1 µA (typ. at VR = 650 V, Ta = 25 °C), and Rth(j-c) = 2.50 °C/W - optimized for high-efficiency PFC stages in industrial AC-DC power supplies.

For engineers reviewing the TRS6V65H datasheet, TRS6V65H pinout, TRS6V65H application, or TRS6V65H equivalent, key selection criteria include its low Qc for reduced switching loss in totem-pole PFC, thermally enhanced cathode-heatsink terminal, and validated operation up to Tj = 175 °C in solar inverter DC-link rectification.

Technical Context

This SiC SBD uses Toshiba's third-generation chip design to achieve simultaneous low conduction loss (VF = 1.2 V @ 6 A) and low capacitive charge (Qc = 17 nC @ 400 V), enabling high-frequency operation without reverse recovery tail current. Its DFN8x8 package integrates a dedicated cathode heatsink terminal (Pin 5) and thermal resistance of 2.50 °C/W (junction-to-case).

The device sustains repetitive 650 V reverse voltage with IR ≤ 1.1 µA at 25 °C and ≤ 70 µA at 150 °C, supporting stable blocking in DC-DC converters operating under elevated ambient temperatures. Absolute maximum IF(DC) = 6 A is rated at Tc = 25 °C, derating to 4.2 A at Tc = 100 °C per thermal curve data.

Key Specifications

Pinout & Package

TRS6V65H is housed in a surface-mount DFN8x8 package (TOSHIBA designation: 2-8T1A), with exposed cathode pad (Pin 5) serving as primary thermal interface. Package weight is 0.175 g (typ.).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D06065E and SS16HE3_A/H, TRS6V65H delivers the lowest combined conduction + switching loss in compact DFN8x8 form factor, with verified thermal performance at Tj = 175 °C - making it optimal for space-constrained, high-reliability PFC and solar inverter designs.

Availability

TRS6V65H is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for TRS6V65H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with focus on industrial reliability and energy efficiency.

The TRS6V65H belongs to Toshiba's third-generation SiC Schottky diode product line, engineered specifically for high-frequency, high-temperature AC-DC conversion in renewable energy and enterprise power systems.

FAQ

What is the maximum junction temperature rating for TRS6V65H?

The TRS6V65H has a maximum junction temperature (Tj) rating of 175 °C, validated per Toshiba's absolute maximum ratings table and thermal characterization curves. This rating enables continuous operation in high-ambient environments such as enclosed solar inverter enclosures or industrial UPS cabinets. The TRS6V65H maintains stable VF and IR performance up to this limit, with IR ≤ 70 µA at 150 °C case temperature - critical for long-term reliability in TRS6V65H-based designs.

Does TRS6V65H have a documented pin-to-pin replacement option?

No documented pin-to-pin replacement for TRS6V65H exists in the public domain. Its DFN8x8 package with dual anode terminals (Pins 3,4) and heatsink cathode (Pin 5) is unique to Toshiba's third-gen SiC SBD family. While C3D06065E offers similar electrical specs, it uses TO-252-2L packaging and lacks the integrated thermal pad layout of TRS6V65H - requiring PCB redesign. TRS6V65H must be selected as a standalone solution for DFN8x8 footprint constraints.

How does TRS6V65H perform at elevated temperatures compared to standard silicon diodes?

At 150 °C, TRS6V65H maintains VF = 1.36 V (typ. @ 6 A) and IR = 70 µA (max @ 650 V), whereas standard Si fast recovery diodes exhibit VF increase >0.2 V and IR increase >100× over same range. This stability allows TRS6V65H to sustain efficiency in solar inverter boost stages where ambient exceeds 85 °C. The TRS6V65H's SiC material inherently suppresses thermal runaway, unlike Si diodes whose IR rises exponentially near max Tj.

What is the significance of the "N.C." pins (1 and 2) on TRS6V65H?

Pins 1 and 2 of TRS6V65H are explicitly designated as No Connection - they have no internal die connection or bond wire. These terminals must remain unconnected on the PCB to avoid parasitic coupling or unintended thermal paths. Their inclusion in the DFN8x8 outline accommodates mechanical symmetry and handling robustness during automated placement, but electrically they serve no function in TRS6V65H operation or thermal management.

Is TRS6V65H compliant with RoHS and REACH requirements?

Yes, TRS6V65H complies with EU RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006, as confirmed by Toshiba's environmental compliance documentation. The device contains no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE), and all homogeneous materials meet threshold limits. Full substance declarations and test reports for TRS6V65H are available upon request through Aetrix Electronics' technical support portal.