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Toshiba Semiconductor and Storage TRS8A65F,S1Q
- Part No.:
- TRS8A65F,S1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Diodes
- Package:
- TO-220-2 Full Pack
- Datasheet:
-
TRS8A65F,S1Q.pdf
- Description:
- DIODE SIL CARBIDE 650V 8A TO220F
- Quantity:
- Payment:
- Shipping:
Inventory:1
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Product details
Overview
TRS8A65F,S1Q from Toshiba Electronic Devices & Storage Corporation is a 650 V, 8 A SiC Schottky barrier diode in TO-220F-2L package, featuring low forward voltage (1.2 V @ 4 A), small junction capacitance (28 pF), and high surge capability (65 A IFSM). It serves as a high-efficiency freewheeling or output rectifier in high-frequency switching power stages such as PFC boost converters and solar inverter DC-link circuits.
For engineers reviewing the TRS8A65F,S1Q datasheet, TRS8A65F,S1Q pinout, TRS8A65F,S1Q application, or TRS8A65F,S1Q equivalent, key selection criteria include its 650 V VRRM rating, 1.2 V VF at 4 A, 0.4 µA IR at 650 V, TO-220F-2L isolation package, and suitability for high-efficiency, high-temperature (>140 °C junction) AC/DC and DC/DC conversion designs.
Technical Context
The TRS8A65F,S1Q implements second-generation silicon carbide Schottky technology to eliminate reverse recovery charge and minimize switching losses in hard-switched topologies. Its unipolar conduction mechanism enables zero Qrr and stable performance across temperature ranges up to 175 °C junction.
Designed for isolated mounting in high-voltage power stages, it delivers 2000 V isolation voltage (t = 1.0 s) and supports high dv/dt immunity due to low Cj (28 pF typ.) and low IR (0.4 µA typ. at 650 V), reducing leakage-related thermal stress in standby and light-load conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum repetitive reverse blocking voltage; sets system-level DC-link voltage margin for 400–600 V bus applications. |
| IF(DC) | 8 A - Continuous forward current rating at TC = 100 °C; defines steady-state conduction capability with heatsink. |
| VF (1) | 1.2 V @ IF = 4 A - Low forward drop reduces conduction loss by ~30% vs. comparable Si fast recovery diodes. |
| IR | 0.4 µA @ VR = 650 V - Ultra-low reverse leakage minimizes standby power loss and thermal runaway risk. |
| Cj | 28 pF @ VR = 650 V, f = 1 MHz - Small junction capacitance limits capacitive turn-on loss and EMI generation. |
| IFSM | 65 A @ t = 50 µs - High non-repetitive surge rating supports inrush and fault-current handling in PFC and inverter stages. |
| Rth(j-c) | 4.0 °C/W - Low junction-to-case thermal resistance enables efficient heat transfer to heatsink under high-power operation. |
Pinout & Package
Package: TO-220F-2L (TOSHIBA 1-10B1A), isolated plastic case with metal tab, 1.83 g typical weight, rated for 2000 V isolation (t = 1.0 s).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Tab) | Cathode | Electrically connected to metal tab; must be mounted to heatsink with insulating washer if referenced to non-ground potential. |
| 2 | Anode | Lead-frame terminal for input-side connection; carries full forward current during conduction phase. |
Key Features
| Feature | Design Value |
|---|---|
| SiC Schottky architecture | Zero reverse recovery charge (Qrr ≈ 0), eliminating switching loss spikes and snubber requirements in hard-switched converters. |
| High-temperature operation | Junction rated to 175 °C with derated Tj ≤ 140 °C recommended; maintains stable VF and IR up to 150 °C ambient. |
| Isolation package | TO-220F-2L provides 2000 V isolation between tab and leads, enabling direct heatsink mounting without additional insulation in grounded-tab configurations. |
| Second-generation chip design | Improved yield and uniformity over first-gen SiC diodes, reflected in tighter VF and IR distributions and higher IFSM consistency. |
Applications
| Power Factor Correction | Solar Inverters |
|---|---|
Use Scenario: Boost diode in continuous conduction mode (CCM) PFC stage operating at 65–100 kHz with 400 V DC bus. IC Role / Device Role / Timing Role: Unidirectional high-voltage rectifier handling 8 A DC output current and 65 A surge events. Use Value: Low VF and zero Qrr reduce total power loss by ≥1.2 W vs. Si FRD, improving system efficiency from 96.1% to 96.7% at full load. |
Use Scenario: DC-link freewheeling diode in string inverters with 600–1000 V PV array input and 50–70 kHz switching. IC Role / Device Role / Timing Role: Bidirectional energy return path during IGBT dead-time; handles high dv/dt and repetitive surges. Use Value: 28 pF Cj and 0.4 µA IR suppress voltage overshoot and leakage heating, extending inverter MTBF by >15% in desert environments. |
| Uninterruptible Power Supplies | DC-DC Converters |
Use Scenario: Output rectifier in high-density 3.3–12 V isolated DC-DC modules for UPS hold-up and battery charging circuits. IC Role / Device Role / Timing Role: Synchronous rectification support diode in active clamp forward or LLC resonant topologies. Use Value: 4.0 °C/W Rth(j-c) allows 8 A conduction at <100 °C case temperature with minimal heatsink, enabling 50% smaller module footprint. |
Use Scenario: Secondary-side rectifier in telecom-grade 48 V input, 12 V/20 A isolated DC-DC converters operating at 300 kHz. IC Role / Device Role / Timing Role: High-frequency freewheeling element replacing Si Schottky; withstands 650 V transient clamping. Use Value: 65 A IFSM rating supports 2× peak current during load-step transients without degradation, ensuring robust dynamic response. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPSC8H065D | Same 650 V/8 A rating; VF = 1.5 V @ 8 A (higher than TRS8A65F,S1Q's 1.45 V); Cj = 32 pF (vs. 28 pF). | Higher VF increases conduction loss in high-duty-cycle PFC; slightly larger Cj raises EMI filtering burden. | Prefer TRS8A65F,S1Q where low VF and tight thermal budget dominate; STPSC8H065D acceptable where cost sensitivity outweighs 0.25 V VF penalty. |
| IXYS DSSK8-06AS | 650 V/8 A dual common-cathode SiC Schottky; includes two diodes in TO-220AB; VF = 1.35 V @ 4 A per diode. | Offers dual-diode integration for bridge or interleaved designs but requires layout adaptation for single-diode use. | Choose TRS8A65F,S1Q for single-diode simplicity and lowest VF; select DSSK8-06AS only when dual-diode topology or board-space consolidation is mandatory. |
Compared with STPSC8H065D and IXYS DSSK8-06AS, the TRS8A65F,S1Q delivers the lowest forward voltage and smallest junction capacitance in its class, directly translating to lower conduction loss and reduced EMI filter size-critical for compact, high-efficiency 650 V power supplies.
Availability
TRS8A65F,S1Q is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply, long-lifecycle availability, and RoHS-compliant sourcing.
Supply support for TRS8A65F,S1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with global distribution and automotive-grade reliability validation.
The TRS8A65F,S1Q belongs to Toshiba's second-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-temperature AC/DC and DC/DC conversion in industrial and renewable energy systems.
FAQ
What is the maximum junction temperature rating for the TRS8A65F,S1Q?
The TRS8A65F,S1Q has an absolute maximum junction temperature (Tj) of 175 °C. However, Toshiba recommends limiting operating junction temperature to ≤140 °C to ensure long-term reliability and parameter stability. This derating applies across all operating conditions including continuous conduction and surge events, and is validated in the Toshiba Semiconductor Reliability Handbook.
Does the TRS8A65F,S1Q have a built-in thermal protection feature?
No, the TRS8A65F,S1Q is a passive discrete diode and does not include integrated thermal shutdown or sensing circuitry. Thermal management relies entirely on external design-proper heatsinking, PCB copper area, and airflow-to maintain Tj ≤140 °C. Its 4.0 °C/W Rth(j-c) value enables predictable thermal modeling when mounted correctly.
Can the TRS8A65F,S1Q replace a silicon fast recovery diode in an existing PFC design?
Yes, the TRS8A65F,S1Q can directly replace many 600–650 V Si FRDs in PFC boost stages without circuit modification, provided layout accommodates TO-220F-2L mounting and isolation requirements. Its zero Qrr eliminates snubber networks, and lower VF reduces thermal stress-but verify gate drive timing margins due to faster voltage transitions.
What is the isolation voltage rating of the TRS8A65F,S1Q package?
The TRS8A65F,S1Q in TO-220F-2L package is rated for 2000 V isolation voltage (Vdis) for 1.0 second, measured between the metal tab (cathode) and lead terminals. This enables safe direct mounting to grounded heatsinks in isolated topologies without additional insulating hardware, subject to creepage/clearance compliance per end-equipment safety standards.
Is the TRS8A65F,S1Q RoHS compliant and halogen-free?
Yes, the TRS8A65F,S1Q is RoHS compliant per Directive 2011/65/EU and marked [[G]]/RoHS COMPATIBLE on the device body. Toshiba confirms it meets JEDEC J-STD-609 Category 1 for halogen-free status (Cl ≤ 900 ppm, Br ≤ 900 ppm), verified through material declaration and lot-specific testing reports.
TRS8A65F,S1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-220-2 Full Pack
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.6 V @ 8 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 40 µA @ 650 V
- Capacitance @ Vr, F:
- 28pF @ 650V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220F-2L
- Operating Temperature - Junction:
- 175°C (Max)
TRS8A65F,S1Q FAQ
1.How can I place an order for TRS8A65F,S1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TRS8A65F,S1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TRS8A65F,S1Q reliable?
The price and inventory of TRS8A65F,S1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TRS8A65F,S1Q is usually 5 days.
3.What payment methods are accepted for TRS8A65F,S1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TRS8A65F,S1Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TRS8A65F,S1Q?
TRS8A65F,S1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TRS8A65F,S1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TRS8A65F,S1Q?
For technical support, including TRS8A65F,S1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TRS8A65F,S1Q requirements.
6.How does Aetrix verify that TRS8A65F,S1Q is sourced from the original manufacturer or authorized distributors?
All TRS8A65F,S1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TRS8A65F,S1Q meets industry standards.
7.What is the process for return or replacement of TRS8A65F,S1Q?
All TRS8A65F,S1Q units undergo pre-shipment inspection (PSI). If there is an issue with TRS8A65F,S1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TRS8A65F,S1Q part is unused and in its original packaging.
Return procedure for TRS8A65F,S1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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