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Toshiba Semiconductor and Storage TRS8E65F,S1Q
- Part No.:
- TRS8E65F,S1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
TRS8E65F,S1Q.pdf
- Description:
- DIODE SIL CARB 650V 8A TO220-2L
- Quantity:
- Payment:
- Shipping:
Inventory:8,401
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Product details
Overview
TRS8E65F,S1Q from Toshiba Electronic Devices & Storage Corporation is a 650 V, 8 A silicon carbide Schottky barrier diode in TO-220-2L package, featuring low forward voltage (1.2 V @ 4 A), minimal reverse leakage (0.4 µA @ 650 V), and high surge capability (69 A IFSM). It serves as a high-efficiency freewheeling or output rectifier in high-frequency switching power stages.
For engineers reviewing the TRS8E65F,S1Q datasheet, TRS8E65F,S1Q pinout, TRS8E65F,S1Q application, or TRS8E65F,S1Q equivalent, key selection criteria include its SiC-based zero-recovery behavior, junction capacitance of 28 pF at 650 V, thermal resistance of 1.8 °C/W (j-c), RoHS-compliant marking, and suitability for PFC, solar inverters, UPS, and DC-DC converters operating up to 175 °C junction temperature.
Technical Context
The TRS8E65F,S1Q implements a second-generation SiC chip design optimized for reduced conduction loss and fast switching with no reverse recovery charge. Its unipolar structure eliminates minority-carrier storage, enabling operation at frequencies exceeding 100 kHz without snubber circuits.
Rated for 650 V repetitive peak reverse voltage and 8 A DC forward current, it delivers stable performance under continuous thermal stress up to 175 °C junction temperature, supported by a low 1.8 °C/W junction-to-case thermal resistance and TO-220-2L mechanical mounting compatibility.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum blocking voltage in reverse bias; enables use in 400–600 V DC bus systems without derating. |
| IF(DC) | 8 A - Continuous forward current rating; supports compact heatsink designs in 300–500 W power stages. |
| VF (1) | 1.2 V @ 4 A - Low conduction loss reduces power dissipation and improves system efficiency above 95%. |
| IR | 0.4 µA @ 650 V - Ultra-low reverse leakage minimizes standby loss and enhances reliability in high-voltage hold-off. |
| Cj | 28 pF @ 650 V, 1 MHz - Small junction capacitance enables fast turn-off and low EMI in hard-switched topologies. |
| Rth(j-c) | 1.8 °C/W - Enables direct mounting to heatsinks with predictable thermal performance and simplified thermal modeling. |
| IFSM | 69 A @ 50 µs - High non-repetitive surge rating withstands inrush and fault currents in AC/DC front-ends. |
Pinout & Package
Package: TO-220-2L (TOSHIBA designation 2-10AE1A), single-die, isolated tab, weight 1.9 g (typ.), mounting torque 0.6 N·m.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Main high-side terminal; connects to positive rail or switch node; electrically bonded to metal tab for thermal conduction. |
| 2 | Anode | Main low-side terminal; connects to ground or negative rail; requires insulated mounting if tab is not grounded. |
Key Features
| Feature | Design Value |
|---|---|
| SiC Schottky architecture | Zero reverse recovery charge (Qrr = 0) eliminates switching losses and ringing in high-dV/dt environments. |
| Second-generation chip design | Improved yield and uniformity over first-gen SiC diodes, reflected in tighter VF and IR distribution across production lots. |
| Low Cj and high IFSM | Enables robust operation in both high-frequency soft-switched and high-current hard-switched converter stages. |
| 175 °C maximum junction temperature | Supports operation in sealed or high-ambient enclosures without forced air cooling in industrial UPS and solar applications. |
| RoHS-compliant marking | [[G]]/RoHS COMPATIBLE label confirms compliance with Directive 2011/65/EU; no lead, mercury, cadmium, or hexavalent chromium. |
Applications
| Power Factor Correction | Solar Inverters |
|---|---|
Use Scenario: Boost PFC stage in 1–3 kW server PSUs and industrial AC/DC supplies. IC Role / Device Role / Timing Role: Output rectifier replacing Si fast recovery diodes to reduce conduction loss and eliminate Qrr-related losses. Use Value: Enables >98% PFC efficiency at full load and reduces heatsink size by 35% versus 600 V Si FRD alternatives. | Use Scenario: DC-link and MPPT-stage rectification in string and microinverters. IC Role / Device Role / Timing Role: Freewheeling diode in synchronous boost and H-bridge output stages handling 600–1000 V DC input. Use Value: Maintains stable reverse blocking at elevated ambient temperatures (up to 85 °C) while minimizing thermal runaway risk. |
| Uninterruptible Power Supplies | DC-DC Converters |
Use Scenario: Bidirectional rectification in online double-conversion UPS battery charging and inverter output stages. IC Role / Device Role / Timing Role: High-reliability output diode in 48–120 V battery interface and 380–400 V DC-link circuits. Use Value: Withstands repeated 69 A surge events during battery reconnection transients without degradation. | Use Scenario: Isolated flyback or LLC secondary-side rectification in telecom and datacom power modules. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in 12–48 V output stages operating at 200–500 kHz. Use Value: Reduces output ripple and EMI due to absence of reverse recovery edge, easing filter design and certification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPSC8H065D | Same 650 V/8 A rating but higher VF (1.5 V @ 8 A); Rth(j-c) = 2.5 °C/W; TO-220AC package. | Higher conduction loss limits use in ultra-high-efficiency PFC; less suitable for thermally constrained UPS designs. | Select when STMicroelectronics supply chain alignment or qualification history is required. |
| IXYS DSSK8-06A | Dual-die TO-220AB package (2×4 A); VF = 1.35 V @ 4 A per die; Cj = 35 pF; IFSM = 60 A per diode. | Offers dual configuration for interleaved PFC but lacks single-diode simplicity and lower Cj of TRS8E65F,S1Q. | Select when board space allows dual layout or redundancy is needed in critical DC-DC outputs. |
Compared with STPSC8H065D and IXYS DSSK8-06A, the TRS8E65F,S1Q provides the lowest junction capacitance (28 pF) and best thermal resistance (1.8 °C/W), making it optimal for high-frequency, thermally dense applications where EMI control and heatsink minimization are prioritized.
Availability
TRS8E65F,S1Q is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.
Supply support for TRS8E65F,S1Q includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, energy efficiency, and industrial-grade performance.
The TRS8E65F,S1Q belongs to Toshiba's second-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-voltage switching power supplies in renewable energy, industrial automation, and datacenter infrastructure.
FAQ
What is the maximum junction temperature rating for the TRS8E65F,S1Q?
The TRS8E65F,S1Q has a maximum junction temperature (Tj) rating of 175 °C. This allows operation in high-ambient environments such as enclosed UPS cabinets or rooftop solar inverters. Toshiba recommends limiting steady-state Tj to ≤140 °C for enhanced long-term reliability, as specified in the derating guidelines of the TRS8E65F,S1Q datasheet Rev. 2.0.A.
Does the TRS8E65F,S1Q have reverse recovery charge (Qrr)?
No, the TRS8E65F,S1Q is a silicon carbide Schottky barrier diode with a unipolar conduction mechanism, resulting in zero reverse recovery charge (Qrr = 0). This eliminates switching losses and associated voltage spikes during turn-off, distinguishing it from silicon fast recovery diodes and enabling cleaner waveforms in high-frequency PFC and DC-DC converters using the TRS8E65F,S1Q.
What is the thermal resistance from junction to case (Rth(j-c)) for TRS8E65F,S1Q?
The TRS8E65F,S1Q has a guaranteed maximum junction-to-case thermal resistance (Rth(j-c)) of 1.8 °C/W. This value is measured under standard mounting conditions (0.6 N·m torque, bare copper heatsink, thermal interface material applied), and supports accurate thermal modeling for heatsink sizing in applications like solar inverters and industrial UPS where the TRS8E65F,S1Q operates continuously near its 8 A DC rating.
Is TRS8E65F,S1Q RoHS compliant?
Yes, the TRS8E65F,S1Q is RoHS compliant, marked with [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] on the device body per Toshiba's documentation. It meets Directive 2011/65/EU requirements, containing no lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls (PBB), or polybrominated diphenyl ethers (PBDE). Full compliance details are available through Toshiba's environmental reports referenced in the TRS8E65F,S1Q datasheet.
What is the typical junction capacitance (Cj) of TRS8E65F,S1Q at 650 V?
The typical junction capacitance (Cj) of the TRS8E65F,S1Q is 28 pF when measured at VR = 650 V and f = 1 MHz. This low capacitance contributes to reduced displacement current and faster switching transitions, directly supporting EMI reduction and improved efficiency in high-frequency DC-DC converters and PFC stages where the TRS8E65F,S1Q is deployed.
TRS8E65F,S1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.6 V @ 8 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 40 µA @ 650 V
- Capacitance @ Vr, F:
- 28pF @ 650V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-2L
- Operating Temperature - Junction:
- 175°C (Max)
TRS8E65F,S1Q FAQ
1.How can I place an order for TRS8E65F,S1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TRS8E65F,S1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TRS8E65F,S1Q reliable?
The price and inventory of TRS8E65F,S1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TRS8E65F,S1Q is usually 5 days.
3.What payment methods are accepted for TRS8E65F,S1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TRS8E65F,S1Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TRS8E65F,S1Q?
TRS8E65F,S1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TRS8E65F,S1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TRS8E65F,S1Q?
For technical support, including TRS8E65F,S1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TRS8E65F,S1Q requirements.
6.How does Aetrix verify that TRS8E65F,S1Q is sourced from the original manufacturer or authorized distributors?
All TRS8E65F,S1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TRS8E65F,S1Q meets industry standards.
7.What is the process for return or replacement of TRS8E65F,S1Q?
All TRS8E65F,S1Q units undergo pre-shipment inspection (PSI). If there is an issue with TRS8E65F,S1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TRS8E65F,S1Q part is unused and in its original packaging.
Return procedure for TRS8E65F,S1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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