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Toshiba Semiconductor and Storage TRS8E65H,S1Q
- Part No.:
- TRS8E65H,S1Q
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Diodes
- Package:
- TO-220-2
- Datasheet:
-
TRS8E65H,S1Q.pdf
- Description:
- G3 SIC-SBD 650V 8A TO-220-2L
- Quantity:
- Payment:
- Shipping:
Inventory:338
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Product details
Overview
TRS8E65H from Toshiba Electronic Devices & Storage Corporation is a 650 V, 8 A silicon carbide Schottky barrier diode in TO-220-2L package, featuring VF = 1.2 V (typ.) at 4 A, Qc = 22 nC (typ.) at 400 V, and IR = 1.5 µA (typ.) at 650 V. It serves as a high-efficiency freewheeling or output rectifier in high-frequency PFC stages and solar inverter DC-link circuits.
For engineers reviewing the TRS8E65H datasheet, TRS8E65H pinout, TRS8E65H application, or TRS8E65H equivalent, key selection criteria include its low Qc for reduced switching loss, low IR for minimal leakage in high-temperature operation, and validated thermal resistance of 2.00 °C/W (junction-to-case) under Tc = 25 °C conditions.
Technical Context
This SiC SBD employs third-generation chip design optimized for high-voltage, high-frequency power conversion. Its unipolar conduction mechanism eliminates reverse recovery charge, enabling zero Qrr and supporting hard-switched topologies up to 100 kHz without snubbers.
Rated for 650 V repetitive peak reverse voltage and 23 A non-repetitive surge current (10 ms half-sine), it operates with junction temperatures up to 175 °C and delivers stable performance across -55 °C to 175 °C storage range. Thermal resistance Rth(j-c) = 2.00 °C/W ensures effective heat transfer to heatsinks in TO-220-2L mounting configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - supports DC-link voltages up to 600 V nominal in solar inverters and UPS systems |
| IF(DC) | 8 A - continuous forward current rating at Tc = 149 °C, suitable for 500–1000 W PFC stages |
| VF (typ.) | 1.2 V @ 4 A - reduces conduction loss vs. Si diodes by ~30% at same current, improving system efficiency |
| Qc (typ.) | 22 nC @ 400 V - enables faster turn-off and lower EMI in high-frequency DC-DC converters |
| IR (typ.) | 1.5 µA @ 650 V, 25 °C - maintains low leakage even at full rated voltage, critical for standby power budgets |
| Rth(j-c) | 2.00 °C/W - allows direct thermal interface to heatsink without thermal pad compromise in TO-220-2L layout |
| Tj max | 175 °C - extends operational margin in enclosed industrial power supplies and solar enclosures |
Pinout & Package
Package: TO-220-2L (TOSHIBA designation 2-10AE1A), single-ended through-hole mount, 1.9 g typical weight, isolated tab (anode-connected).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Tab) | Cathode | Electrically connected to metal tab; requires insulated mounting when cathode is not at chassis ground |
| 2 | Anode | Lead-frame terminal for anode connection; PCB trace must handle 8 A DC with <10 mΩ resistance |
Key Features
| Feature | Design Value |
|---|---|
| Third-generation SiC chip design | Optimized epitaxial layer and termination structure reduce edge leakage and improve yield at 650 V blocking |
| Low forward voltage | VF = 1.2 V (typ.) at 4 A lowers conduction loss by 0.48 W vs. comparable Si diode in 8 A PFC stage |
| Low total capacitive charge | Qc = 22 nC (typ.) at 400 V cuts switching energy loss by >60% versus 650 V Si FRD in 100 kHz DC-DC |
| Low reverse current | IR = 1.5 µA (typ.) at 650 V ensures <1.2 mW leakage dissipation at full voltage, critical for high-temp UPS hold-up |
| High junction temperature rating | Tj(max) = 175 °C enables operation in sealed solar inverter enclosures without forced air cooling |
Applications
| Power Factor Correction | Solar Inverters |
|---|---|
Use Scenario: Boost PFC stage in 1 kW AC-DC front-end for industrial motor drives. IC Role / Device Role / Timing Role: Output rectifier handling 8 A DC at 400 V bus, switching at 65–100 kHz. Use Value: Low Qc minimizes turn-off loss and EMI generation; low VF improves full-load efficiency by 0.8% over Si alternatives. | Use Scenario: DC-link freewheeling path in string inverters with 600 V nominal PV input. IC Role / Device Role / Timing Role: Anti-parallel diode for IGBTs in H-bridge, conducting during dead-time intervals. Use Value: Zero Qrr eliminates shoot-through risk; 175 °C Tj rating sustains reliability in rooftop ambient up to 70 °C. |
| Uninterruptible Power Supplies | DC-DC Converters |
Use Scenario: Output rectification in 3 kW double-conversion UPS with 380 V DC bus. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in phase-shifted full-bridge secondary side. Use Value: Low IR (<2 µA at 650 V) prevents battery drain during long-term standby; TO-220-2L simplifies heatsink integration. | Use Scenario: Isolated flyback or LLC resonant converter in telecom power supply (48 V output, 300–400 V input). IC Role / Device Role / Timing Role: Secondary-side rectifier operating at 200–500 kHz with 8 A peak current. Use Value: 22 nC Qc enables clean voltage transitions and reduces snubber losses; 2.00 °C/W Rth(j-c) supports 100% load at 70 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STPSC8H065D | Same 650 V/8 A rating; VF = 1.35 V (typ.) at 8 A; Qc = 25 nC (typ.) at 400 V; TO-220AC package with isolated tab | Higher VF increases conduction loss by ~0.12 W at 4 A; slightly higher Qc affects EMI filtering requirements | Preferred where ST's ecosystem support and qualification for automotive-grade PFC is required |
| IXYS DSSK8-06AS | 650 V/8 A dual common-cathode SiC SBD in TO-247AC; VF = 1.3 V (typ.) at 4 A; Qc = 24 nC (typ.) at 400 V | Dual configuration enables interleaved PFC; TO-247AC offers lower Rth(j-c) but larger footprint | Selected when dual-diode topology or superior thermal performance (>1.5 °C/W) justifies board space increase |
Compared with STPSC8H065D and IXYS DSSK8-06AS, the TRS8E65H delivers the lowest VF (1.2 V) and Qc (22 nC) among these three 650 V/8 A SiC SBDs, making it optimal for efficiency-critical, thermally constrained PFC and solar inverter designs where TO-220-2L footprint is mandated.
Availability
TRS8E65H is available at Aetrix Electronics and suitable for Power Factor Correction, Solar Inverters, and Uninterruptible Power Supplies requiring stable component supply and qualified SiC diode performance at 650 V/8 A.
Supply support for TRS8E65H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with focus on industrial, automotive, and consumer applications.
The TRS8E65H belongs to Toshiba's third-generation SiC Schottky barrier diode product line, engineered specifically for high-efficiency, high-reliability AC-DC and DC-DC conversion in renewable energy and industrial power systems.
FAQ
What is the maximum junction temperature rating for the TRS8E65H?
The TRS8E65H has a maximum junction temperature (Tj) rating of 175 °C, verified per Toshiba's Absolute Maximum Ratings table. This allows sustained operation in high-ambient environments such as sealed solar inverter enclosures or industrial UPS units. Derating curves in the datasheet confirm safe operation up to this limit when Rth(j-c) = 2.00 °C/W is maintained via proper heatsinking. The TRS8E65H must not exceed this temperature under any steady-state or transient condition.
Is the TRS8E65H RoHS compliant?
Yes, the TRS8E65H is RoHS compliant, marked as [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] per Toshiba's marking specification. Compliance aligns with EU Directive 2011/65/EU. Full environmental documentation, including substance declarations and test reports, is available through Toshiba's official sales channels. The TRS8E65H meets lead-free soldering requirements and contains no restricted substances above threshold limits.
What is the thermal resistance from junction to case for the TRS8E65H?
The TRS8E65H has a maximum thermal resistance of Rth(j-c) = 2.00 °C/W, measured under Tc = 25 °C per Toshiba's Thermal Characteristics table. This value assumes direct metal-to-metal contact between the isolated tab (cathode) and a flat, smooth heatsink surface with appropriate thermal interface material. The TRS8E65H's TO-220-2L package enables this low Rth(j-c) without requiring additional thermal vias or copper pours beyond standard PCB layout practices.
Does the TRS8E65H have reverse recovery charge (Qrr)?
No, the TRS8E65H is a silicon carbide Schottky barrier diode and exhibits no reverse recovery charge (Qrr). As a majority-carrier device, it switches off with only capacitive discharge (Qc = 22 nC typ. at 400 V), eliminating reverse recovery losses and associated EMI. This behavior is confirmed in Toshiba's Electrical Characteristics and Characteristics Curves sections. The TRS8E65H's zero Qrr makes it suitable for hard-switched topologies where Si FRDs would require snubbers or gate drive adjustments.
What are the mounting torque specifications for the TRS8E65H?
The TRS8E65H specifies a mounting torque (TOR) of 0.6 N·m for the TO-220-2L package screw, as stated in the Absolute Maximum Ratings table. Exceeding this torque risks mechanical damage to the lead frame or internal die attach. Proper torque control ensures reliable thermal contact between the cathode tab and heatsink while preserving package integrity. The TRS8E65H's mechanical robustness under this torque is validated per Toshiba's qualification standards for industrial power applications.
TRS8E65H,S1Q Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- TO-220-2
- Packaging:
- Tube
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 8A
- Voltage - Forward (Vf) (Max) @ If:
- 1.35 V @ 8 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 90 µA @ 650 V
- Capacitance @ Vr, F:
- 520pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220-2L
- Operating Temperature - Junction:
- 175°C
TRS8E65H,S1Q FAQ
1.How can I place an order for TRS8E65H,S1Q through Aetrix?
Please submit a Request for Quotation (RFQ) for TRS8E65H,S1Q on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for TRS8E65H,S1Q reliable?
The price and inventory of TRS8E65H,S1Q are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TRS8E65H,S1Q is usually 5 days.
3.What payment methods are accepted for TRS8E65H,S1Q?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TRS8E65H,S1Q transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for TRS8E65H,S1Q?
TRS8E65H,S1Q orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your TRS8E65H,S1Q order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for TRS8E65H,S1Q?
For technical support, including TRS8E65H,S1Q datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TRS8E65H,S1Q requirements.
6.How does Aetrix verify that TRS8E65H,S1Q is sourced from the original manufacturer or authorized distributors?
All TRS8E65H,S1Q products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TRS8E65H,S1Q meets industry standards.
7.What is the process for return or replacement of TRS8E65H,S1Q?
All TRS8E65H,S1Q units undergo pre-shipment inspection (PSI). If there is an issue with TRS8E65H,S1Q, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The TRS8E65H,S1Q part is unused and in its original packaging.
Return procedure for TRS8E65H,S1Q:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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