Taiwan Semiconductor Corporation TS25P07G C2G

Overview

TS25P07G from Taiwan Semiconductor is a 25A, 1000V standard quad bridge rectifier in TS-6P package, featuring glass passivated junctions, <0.1μA typical reverse leakage at 25°C, 350A peak surge current, and AEC-Q101 qualification option (TS25P07GH). It serves as the primary AC/DC conversion stage in high-reliability industrial SMPS.

For engineers reviewing the TS25P07G datasheet, TS25P07G pinout, TS25P07G application, or TS25P07G equivalent, key selection criteria include its 1000V V_RRM, 0.6°C/W R_θJC, TS-6P mechanical footprint, quad configuration for full-wave bridge integration, and compliance with UL 94V-0 and JESD201 Class 2 whisker requirements.

Technical Context

This device integrates four silicon diodes in a single TS-6P molded package to form a complete single-phase bridge rectifier. Its glass passivated junction ensures stable reverse characteristics across -55°C to +150°C operating range, while the matte tin-plated leads support reliable soldering per J-STD-002.

The TS25P07G delivers 25A average forward current with 1.1V max forward voltage at 25A/25°C and withstands 350A non-repetitive surge (8.3ms half-sine), making it suitable for high-transient environments such as LED drivers and industrial adapters where thermal management and surge resilience are critical.

Key Specifications

Pinout & Package

Package: TS-6P - Molded plastic case with 6 leads, UL 94V-0 rated, matte tin-plated terminals, 7.15g weight, polarity marked on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bridge rectifier applications.

Compared with VS-25B10 and GBPC2510, TS25P07G offers superior thermal performance (0.6°C/W), TS-6P mechanical ruggedness with 0.92 N·m mounting torque, and optional AEC-Q101 qualification-making it optimal for space-constrained, high-reliability, or automotive-adjacent power systems.

Availability

TS25P07G is available at Aetrix Electronics and suitable for industrial SMPS, LED lighting drivers, medical power adapters, and EV charging auxiliary supplies requiring stable component supply, long lifecycle assurance, and consistent parametric performance across production batches.

Supply support for TS25P07G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power devices, rectifiers, TVS diodes, and MOSFETs since 1979.

The TS25P series is designed specifically for high-current, high-voltage AC/DC front-end applications demanding reliability, thermal efficiency, and regulatory compliance in industrial, medical, and transportation power systems.

FAQ

What is the maximum junction temperature rating for TS25P07G?

The TS25P07G has a maximum junction temperature (T_J) of +150°C, verified per absolute maximum ratings table in the official datasheet. This rating applies across the full operating ambient range and enables use in high-temperature industrial enclosures when mounted to an adequately sized heatsink. Thermal derating curves confirm 25A I_F is sustainable up to 75°C case temperature. TS25P07G must be operated within this limit to ensure long-term reliability and prevent parametric shift.

Does TS25P07G have AEC-Q101 qualification?

The base TS25P07G is not AEC-Q101 qualified; however, the variant TS25P07GH is explicitly qualified per AEC-Q101 Rev D. The "H" suffix denotes automotive-grade screening including HTOL, TC, UHAST, and bond wire pull tests. TS25P07G itself meets industrial reliability standards but lacks the extended test matrix required for automotive deployment. Customers requiring AEC-Q101 must specify TS25P07GH.

What is the forward voltage drop of TS25P07G at rated current?

At 25A and 25°C junction temperature, the TS25P07G exhibits a maximum forward voltage drop of 1.1V per diode, as specified in the electrical characteristics table. Since it is a full-bridge configuration, total conduction loss is dominated by two diodes conducting simultaneously, resulting in ~2.2V total drop at full load. This value is measured under pulse conditions (PW = 0.3ms) to minimize self-heating effects during test.

How does the TS-6P package of TS25P07G differ from standard GBPC packages?

The TS-6P package used by TS25P07G features six leads (including two NC pins), UL 94V-0 molding compound, and a 0.92 N·m maximum mounting torque specification-unlike GBPC-4's four-lead, lower-torque design. TS-6P provides enhanced mechanical stability, better creepage/clearance for high-voltage isolation, and improved thermal interface via larger copper slug area. These differences make TS25P07G more suitable for high-vibration or high-safety-margin applications than GBPC-packaged alternatives.

What is the reverse leakage current of TS25P07G at elevated temperature?

At 125°C junction temperature and rated reverse voltage (1000V), the TS25P07G exhibits a maximum reverse leakage current of 500μA per diode, as confirmed in the electrical specifications table. This value is significantly higher than the <0.1μA typical at 25°C, reflecting expected thermal behavior of silicon PN junctions. Designers must account for this increase when calculating standby losses or DC bus hold-up time in high-ambient environments.