Taiwan Semiconductor Corporation TS35P06GH

Overview

TS35P06GH from Taiwan Semiconductor is a 35A, 800V AEC-Q101-qualified standard bridge rectifier in TS-6P package with quad configuration, glass passivated junction, <0.1μA typical reverse leakage at 25°C, and 350A peak surge current capability-used in automotive-grade SMPS and lighting power supplies.

For engineers reviewing the TS35P06GH datasheet, TS35P06GH pinout, TS35P06GH application, or TS35P06GH equivalent, key selection criteria include VRRM = 800 V, IF = 35 A, IFSM = 350 A, RθJC = 0.6 °C/W, and AEC-Q101 qualification for under-hood automotive power conversion.

Technical Context

This device integrates four diodes in a single-phase full-wave bridge configuration, enabling AC-to-DC conversion without external interconnection. Its glass passivated chip junction ensures stable reverse blocking and low IR drift over temperature.

The TS-6P package supports high thermal dissipation (RθJC = 0.6 °C/W) and mechanical robustness with matte tin-plated leads compliant to J-STD-002 and JESD 201 Class 2 whisker testing-critical for automotive vibration and thermal cycling reliability.

Key Specifications

Pinout & Package

Package: TS-6P - 6-pin molded plastic case with isolated metal baseplate, UL 94V-0 rated compound, and polarity marking per device top-side silkscreen.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bridge rectifier applications.

Compared with VS-35B80 and GBPC3508, TS35P06GH uniquely combines AEC-Q101 qualification, superior thermal performance (RθJC = 0.6 °C/W), and TS-6P compactness-making it the only option qualified for automotive under-hood rectification without thermal or reliability compromise.

Availability

TS35P06GH is available at Aetrix Electronics and suitable for automotive LED lighting, industrial SMPS front-ends, and universal-input AC-DC adapters requiring stable component supply and long-term lifecycle support.

Supply support for TS35P06GH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving automotive, industrial, and consumer markets since 1979.

The TS35PxxG series is part of TSC's AEC-Q101-qualified bridge rectifier product line, engineered specifically for high-reliability AC/DC conversion in automotive power systems and harsh-environment industrial equipment.

FAQ

What is the maximum junction temperature rating for TS35P06GH?

The TS35P06GH has a maximum junction temperature (TJ) rating of +150°C, verified per AEC-Q101 stress testing. This allows operation in high-ambient environments such as automotive engine compartments or enclosed industrial enclosures. The device maintains electrical specifications within limits up to this temperature, provided thermal design respects the 0.6 °C/W RθJC and appropriate heatsinking is applied. Derating curves in the TS35P06GH datasheet confirm usable current capacity down to 25 A at TJ = 125°C.

Does TS35P06GH have AEC-Q101 qualification, and what does that cover?

Yes, TS35P06GH is AEC-Q101 qualified-confirmed by Taiwan Semiconductor's official documentation and UL Recognition File #E-326243. This qualification covers temperature cycling, high-temperature reverse bias (HTRB), highly accelerated stress test (HAST), and mechanical shock testing per AEC-Q101-001 Rev D. It validates suitability for automotive power electronics, including lighting, body control, and infotainment subsystems-not just automotive-grade packaging.

What is the forward voltage drop of TS35P06GH at rated current?

The TS35P06GH specifies a maximum forward voltage (VF) of 1.1 V per diode at IF = 17.5 A and TJ = 25°C (pulse test, PW = 0.3 ms). As a full-bridge device, total conduction loss is approximately 2.2 V across the conducting path. At elevated temperatures or higher duty cycles, VF increases slightly-typical data shows ~1.25 V per diode at TJ = 125°C. This value directly impacts conduction loss and thermal design in high-efficiency SMPS.

How does the TS-6P package of TS35P06GH differ from standard GBPC or KBPC packages?

The TS-6P package used by TS35P06GH features a compact 22.5 × 18.5 mm outline with an isolated metal baseplate optimized for low RθJC (0.6 °C/W). Unlike larger GBPC or KBPC packages, TS-6P offers higher power density and better thermal transfer to heatsinks. It also uses matte tin-plated leads compliant to J-STD-002 and passes JESD 201 Class 2 whisker testing-key for automotive solder joint reliability. Mechanical drawings confirm pin pitch and mounting torque (0.92 N·m max).

What is the reverse leakage current specification for TS35P06GH at high temperature?

TS35P06GH specifies a maximum reverse leakage current (IR) of 500 µA per diode at TJ = 125°C and rated VRRM = 800 V (pulse test, PW = 30 ms). At TJ = 25°C, IR is ≤10 µA. This elevated leakage at high temperature is typical for silicon bridge rectifiers and must be accounted for in standby power budgeting-especially in energy-efficient lighting and adapter designs targeting Level VI compliance.