Taiwan Semiconductor Corporation TS6K80-T

Overview

TS6K80-T from Taiwan Semiconductor is a 6A, 800V repetitive peak reverse voltage (V_RRM) standard quad bridge rectifier in TS4K package, featuring glass-passivated junctions, 150A surge capability (I_FSM), and UL Recognized File #E-326243 - used in high-reliability AC/DC front-end stages of industrial SMPS.

For engineers reviewing the TS6K80-T datasheet, TS6K80-T pinout, TS6K80-T application, or TS6K80-T equivalent, key selection criteria include V_RRM = 800V, I_F = 6A, thermal resistance R_θJL = 6°C/W, and TS4K mechanical compatibility with PCB-mounting torque ≤0.92 N·m.

Technical Context

The TS6K80-T integrates four silicon diodes in a single-phase full-wave bridge configuration with common-cathode/common-anode topology. Its glass-passivated junction ensures stable reverse leakage (<500 µA at 125°C) and robust surge handling (I_FSM = 150A, 8.3 ms sine wave).

Thermal performance is defined for mounting on a 2" × 3" × 0.25" aluminum heatsink: R_θJC = 5°C/W, R_θJL = 6°C/W, and R_θJA = 17°C/W. Forward voltage is rated ≤1.0 V per diode at 3A/25°C and ≤0.9 V at 3A/125°C.

Key Specifications

Pinout & Package

Package: TS4K - molded plastic case with matte tin-plated leads, UL 94V-0 rated, weight ≈4.10 g, mounting torque ≤0.92 N·m. Polarity marked on device body.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bridge rectifier applications.

Compared with TS6K80-T, GBU8K and GBU8J offer higher current ratings but require larger board area and lack UL recognition - making TS6K80-T preferred for space-constrained, safety-certified designs demanding 6A/800V performance with proven thermal and reliability data.

Availability

TS6K80-T is available at Aetrix Electronics and suitable for switching mode power supplies, LED lighting drivers, and industrial adapters requiring stable component supply with consistent TS4K footprint and UL-compliant construction.

Supply support for TS6K80-T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, serving global power and protection markets since 1979.

The TS6K series is designed specifically for high-reliability AC/DC bridge rectification in industrial, lighting, and consumer power supplies - emphasizing UL recognition, thermal robustness, and long-lifecycle stability.

FAQ

What is the maximum repetitive peak reverse voltage (V_RRM) for TS6K80-T?

The TS6K80-T has a V_RRM rating of 800 V, confirmed in the Absolute Maximum Ratings table for this exact part number. This value defines the highest sustained reverse voltage each internal diode can block without breakdown and is validated per JEDEC test conditions. The TS6K80-T is intended for applications where peak line voltage plus transients remain below this threshold - such as 230 V_AC mains with 2× safety margin. TS6K80-T must not be substituted with lower-voltage variants like TS6K60-T in 800V-design contexts.

Does TS6K80-T meet UL safety standards?

Yes, TS6K80-T is UL Recognized under File #E-326243, as explicitly stated in the FEATURES section of the official datasheet. This recognition applies to the TS4K package configuration and validates compliance with UL 60747-4 for discrete semiconductors. The UL mark supports end-product safety certifications without requiring additional component-level testing - a critical advantage for medical-adjacent or industrial equipment where regulatory timelines matter. TS6K80-T maintains this status across all production lots.

What is the forward voltage (V_F) specification for TS6K80-T at operating temperature?

Per Electrical Specifications, TS6K80-T exhibits V_F ≤ 1.0 V per diode at I_F = 3 A and T_J = 25°C, and ≤ 0.9 V at the same current and T_J = 125°C. These values are measured under pulsed conditions (PW = 0.3 ms) and reflect actual conduction loss behavior across its rated junction temperature range. Because TS6K80-T contains four diodes in bridge configuration, total forward drop in full-wave operation is twice the per-diode V_F, directly impacting system efficiency calculations.

Can TS6K80-T replace TS6K60-T or TS6K40-T in an existing design?

TS6K80-T is mechanically and electrically compatible with TS6K60-T and TS6K40-T - sharing identical TS4K package, pinout, and thermal characteristics. Its higher 800V V_RRM provides increased surge margin without layout changes. However, substitution should verify that the original design does not rely on lower reverse leakage or tighter V_F tolerances unique to lower-voltage variants. TS6K80-T remains a direct fit for any TS6Kx-T design targeting enhanced reliability in high-line-voltage environments.

What thermal resistance values apply to TS6K80-T under standard mounting conditions?

TS6K80-T specifies R_θJC = 5°C/W, R_θJL = 6°C/W, and R_θJA = 17°C/W - all measured with the device mounted on a 2" × 3" × 0.25" aluminum heatsink per Thermal Performance Note. These values are identical across the TS6K40-T to TS6K80-T family and enable accurate junction temperature estimation using P_cond = I_F × V_F. Lead-to-ambient resistance (R_θLA) is not specified, so heatsink attachment remains essential for sustained 6A operation above 70°C ambient.