Taiwan Semiconductor Corporation TS6P03G C2G

Overview

TS6P03G from Taiwan Semiconductor is a 6A, 200V repetitive peak reverse voltage (V_RRM) quad-configuration standard bridge rectifier in TS-6P package, featuring glass-passivated junctions, <0.1μA typical reverse leakage at 25°C, and 150A peak surge current capability; used in AC/DC front-end stages of industrial adapters and lighting power supplies.

For engineers reviewing the TS6P03G datasheet, TS6P03G pinout, TS6P03G application, or TS6P03G equivalent, key selection criteria include V_RRM = 200V, I_F = 6A continuous, thermal resistance R_θJC = 1.8°C/W, AEC-Q101 qualification availability (TS6P03GH), and TS-6P mechanical compatibility with PCB-mounting torque ≤0.92 N·m.

Technical Context

The TS6P03G integrates four silicon diodes in a single-phase full-wave bridge configuration with common-cathode and common-anode terminals externally accessible. Its glass-passivated junction ensures stable reverse characteristics across -55°C to +150°C operating range and supports high-reliability operation under repetitive surge conditions (I_FSM = 150A, 8.3ms half-sine).

Thermal performance is defined by R_θJC = 1.8°C/W, enabling efficient heat transfer to heatsink-mounted PCBs; forward voltage is specified at 1.0V max per diode at 3A/25°C and 1.1V max at 6A/25°C, with reverse current limited to 10μA max at rated V_R and 25°C.

Key Specifications

Pinout & Package

Package: TS-6P - molded plastic case with matte tin-plated leads, UL 94V-0 rated, weight ≈7.15g, mounting torque ≤0.92 N·m, polarity marked on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bridge rectifier applications.

Compared with TS6P03G, GBU6K offers higher V_RRM at the cost of larger size and reduced thermal efficiency, while GBJ602 matches voltage/current ratings but delivers inferior thermal performance-making TS6P03G optimal for space-constrained, thermally demanding 200V-class adapter designs.

Availability

TS6P03G is available at Aetrix Electronics and suitable for industrial adapters, LED lighting power supplies, and switching mode power supplies requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for TS6P03G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in rectifiers, TVS diodes, MOSFETs, and bipolar transistors.

The TS6P series was designed specifically for high-reliability AC/DC front-end rectification in industrial, lighting, and consumer power supplies-emphasizing surge robustness, thermal efficiency, and regulatory compliance (UL, AEC-Q101, RoHS).

FAQ

What is the maximum junction temperature rating for TS6P03G?

The TS6P03G has a maximum junction temperature (T_J) rating of +150°C, verified per absolute maximum ratings table in the official datasheet. This allows operation in high-ambient environments such as enclosed LED drivers or industrial enclosures. Derating curves confirm usable current capacity down to 0A at 150°C case temperature. The TS6P03G must be mounted with appropriate thermal interface to maintain T_J ≤150°C under full load.

Does TS6P03G have AEC-Q101 qualification?

The base TS6P03G is not AEC-Q101 qualified; however, the variant TS6P03GH is explicitly qualified per AEC-Q101 Rev D. This qualification covers temperature cycling, mechanical shock, and humidity testing required for automotive under-hood and cabin applications. TS6P03G itself remains suitable for industrial and commercial use where automotive reliability is not mandated.

What is the forward voltage drop of TS6P03G at 6A?

The TS6P03G exhibits a maximum forward voltage drop of 1.1 V per diode at I_F = 6A and T_J = 25°C, as specified in the Electrical Specifications table. This value increases with junction temperature and must be considered in thermal design. At 3A, V_F is ≤1.0 V under identical conditions. Pulse testing (0.3ms PW) ensures measurement accuracy under realistic conduction duty cycles.

How does the TS-6P package of TS6P03G compare to GBU-6 or GBJ-6 footprints?

The TS-6P package used by TS6P03G has a distinct 22.5 × 18.5 mm outline with 5.08 mm lead pitch and center-to-center distance between AC pins of 15.2 mm-different from both GBU-6 (27.5 × 20.5 mm) and GBJ-6 (22.5 × 18.5 mm but with 7.62 mm lead pitch). While GBJ-6 shares width/length, its pin spacing and internal leadframe differ, making direct PCB replacement impossible without layout revision.

What is the reverse leakage current specification for TS6P03G at 125°C?

At T_J = 125°C and rated reverse voltage (200V), the TS6P03G specifies a maximum reverse current (I_R) of 500 μA per diode, based on pulse test conditions (PW = 30 ms). This is significantly higher than the 10 μA max at 25°C, reflecting expected thermal dependence of leakage. Designers must account for this increase in high-temperature applications to avoid excessive standby power loss.