Taiwan Semiconductor Corporation TSSE3U45

Overview

TSSE3U45 from Taiwan Semiconductor is a 3A, 45V low-forward-voltage trench Schottky rectifier in SOD-123HE package, designed for high-efficiency DC/DC conversion and SMPS secondary-side rectification where low conduction loss and thermal stability are critical. It delivers VF = 0.40 V at 3A/25°C and 0.34 V at 3A/125°C, supports IFSM = 80A surge, and operates up to TJ = 150°C.

For engineers reviewing the TSSE3U45 datasheet, TSSE3U45 pinout, TSSE3U45 application, or TSSE3U45 equivalent, key selection criteria include forward voltage at rated current and temperature, repetitive peak reverse voltage (VRRM = 45 V), junction-to-lead thermal resistance (RθJL = 23 °C/W), and moisture sensitivity level (MSL 1).

Technical Context

This device implements a single-die trench Schottky architecture optimized for low VF and high-temperature forward conduction stability. Its RθJL of 23 °C/W enables efficient heat transfer to the PCB pad, while the SOD-123HE package's matte tin-plated leads ensure reliable solderability per J-STD-002.

The TSSE3U45 is rated for VRRM = 45 V and VR(RMS) = 32 V, with IR ≤ 1 mA at 25°C and ≤ 50 mA at 125°C. Its 80 A IFSM rating supports robust transient handling in switching power supplies without derating under typical 8.3 ms half-sine surges.

Key Specifications

Pinout & Package

SOD-123HE surface-mount package with cathode-indicating band; compact 2.7 mm × 1.6 mm footprint, 0.022 g weight, UL 94V-0 molding compound, and matte tin-plated leads compliant with JESD 201 Class 2 whisker testing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Schottky rectifier applications.

Compared with VS-3EYH04-M3/54 and SB340-T, the TSSE3U45 provides higher VRRM margin (45 V), lowest VF in its class, and superior thermal resistance in the smallest standard footprint-making it optimal for high-density, high-efficiency 3A rectification where voltage headroom and thermal headroom are both constrained.

Availability

TSSE3U45 is available at Aetrix Electronics and suitable for switching mode power supplies, laptop adapters, and industrial DC/DC converters requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for TSSE3U45 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Taiwan Semiconductor Corporation (TSC) is a vertically integrated analog and discrete semiconductor manufacturer headquartered in Hsinchu, Taiwan, specializing in power rectifiers, TVS devices, and MOSFETs for industrial and computing applications.

The TSSE3Uxx series was developed to deliver ultra-low VF trench Schottky performance in miniature SMD packages for next-generation high-frequency, high-efficiency power conversion systems.

FAQ

What is the maximum junction temperature rating for TSSE3U45?

The TSSE3U45 has a maximum junction temperature (TJ max) of +150 °C, verified per absolute maximum ratings in the official Taiwan Semiconductor datasheet. This allows uninterrupted operation in sealed industrial enclosures or automotive under-hood environments where ambient temperatures exceed 85 °C, provided thermal design maintains junction temperature below this limit. The TSSE3U45's RθJL of 23 °C/W supports this rating via efficient conduction to the PCB.

Does TSSE3U45 have a specified forward voltage at elevated temperature?

Yes, the TSSE3U45 specifies VF = 0.34 V (typical) and 0.44 V (max) at IF = 3 A and TJ = 125 °C. This data confirms improved conduction efficiency at high operating temperatures-a hallmark of trench Schottky architecture. Unlike conventional silicon diodes, the TSSE3U45's VF decreases with rising junction temperature, reducing thermal runaway risk in sustained-load applications.

Is TSSE3U45 compatible with lead-free reflow profiles?

Yes, TSSE3U45 features matte tin-plated leads qualified per J-STD-002 for solderability and is rated MSL Level 1 per J-STD-020-meaning it can be subjected to standard IPC/JEDEC lead-free reflow profiles (peak 260 °C) without baking or dry-pack requirements. Its UL 94V-0 molding compound also withstands multiple reflow cycles without delamination or cracking.

What is the marking code printed on the TSSE3U45 device body?

The TSSE3U45 is marked with "E3U45" on its top surface, as confirmed in the Absolute Maximum Ratings table of the Taiwan Semiconductor datasheet. This 5-character laser marking distinguishes it from the TSSE3U60 variant ("E3U60") and enables visual verification during incoming inspection or field failure analysis.

How does the thermal resistance of TSSE3U45 compare to standard SOD-123 devices?

The TSSE3U45 achieves RθJL = 23 °C/W, significantly lower than typical SOD-123 Schottky diodes (often >35 °C/W). This is enabled by optimized die attach and internal leadframe geometry in the SOD-123HE variant. As a result, the TSSE3U45 dissipates 1.2 W at 3A with only ~28 °C rise above PCB pad temperature-enabling smaller copper areas and eliminating need for thermal vias in many designs.