Texas Instruments UCC21222QDQ1

Overview

UCC21222QDQ1 from Texas Instruments is an AEC-Q100 Grade 1 qualified, isolated dual-channel gate driver with programmable dead time, 4A peak source / 6A peak sink output drive strength, 3kVRMS reinforced isolation, and >125V/ns CMTI-designed for driving power MOSFETs, IGBTs, and GaN transistors in automotive high-voltage power stages.

For engineers reviewing the UCC21222QDQ1 datasheet, UCC21222QDQ1 pinout, UCC21222QDQ1 application, or UCC21222QDQ1 equivalent, key selection considerations include its dual-channel configuration flexibility (dual low-side, dual high-side, or half-bridge), resistor-programmable dead time (13–487 ns), 8V VDD UVLO threshold, and robust operation across –40°C to +150°C junction temperature.

Technical Context

The UCC21222QDQ1 integrates two independent isolated driver channels separated by a reinforced 3.0kVRMS galvanic barrier, each with dedicated VDDA/VSSA and VDDB/VSSB supplies supporting up to 25V output drive voltage. Its input side (VCCI/GND) operates at 3.0–5.5V and features TTL/CMOS-compatible inputs with internal pull-down on INA/INB and pull-up on DIS.

Dead time is configured via external resistor on the DT pin (0–100 kΩ), enabling precise system-level overlap control; propagation delay matching is ≤5 ns over full temperature range, allowing safe paralleling of outputs to double drive strength without shoot-through risk.

Key Specifications

Pinout & Package

UCC21222QDQ1 is housed in a 16-pin SOIC (D package) with 9.9 mm × 3.91 mm body size and gull-wing leads. The package provides reinforced insulation with ≥4 mm creepage/clearance and 17 µm minimum internal insulation thickness.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar isolated dual-channel gate driver applications.

Compared with UCC21222QDQ1, UCC21520QDWQ1 offers identical drive strength but sacrifices dead time flexibility, while Si823H4AB-IS trades automotive qualification and robustness for slightly higher isolation voltage-making UCC21222QDQ1 the optimal choice for ASIL-B OBC and inverter auxiliary supplies requiring field-tunable timing.

Availability

UCC21222QDQ1 is available at Aetrix Electronics and suitable for automotive on-board chargers, high-voltage DC-DC converters, and traction inverter auxiliary supplies requiring stable component supply across extended temperature and safety-critical lifecycles.

Supply support for UCC21222QDQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with deep expertise in automotive-grade reliability and functional safety.

The UCC21222QDQ1 belongs to TI's automotive isolated gate driver product line, engineered specifically for high-efficiency, high-reliability power conversion in electric vehicle traction systems and charging infrastructure.

FAQ

What is the maximum recommended VDD supply voltage for UCC21222QDQ1?

The absolute maximum VDDA and VDDB supply voltage for UCC21222QDQ1 is 30 V, but the recommended operating range is 9.2 V to 25 V. Operating above 25 V may increase power dissipation and reduce thermal margin, especially at high ambient temperatures. For most automotive applications, 12 V or 15 V is used to balance drive strength and efficiency-UCC21222QDQ1 maintains full 4A/6A drive capability within this range.

Does UCC21222QDQ1 support half-bridge configuration with bootstrap high-side supply?

No-UCC21222QDQ1 does not support bootstrap high-side supply. It requires fully isolated secondary-side supplies (VDDB/VSSB) for high-side operation. Each channel has independent VDD and VSS pins, enabling true galvanically isolated high-side drive without bootstrap diode/capacitor limitations. This architecture avoids shoot-through risks during low-duty-cycle operation and supports 100% duty cycle, making UCC21222QDQ1 suitable for active clamp and LLC topologies where bootstrap fails.

How is dead time programmed on UCC21222QDQ1, and what is the minimum achievable value?

Dead time on UCC21222QDQ1 is set by connecting an external resistor (R_DT) between the DT pin and GND. With R_DT = 0 Ω (shorted to GND), dead time is 0.2 ns (effectively disabled). Values from 1.7 kΩ to 100 kΩ yield 86–487 ns dead time per the formula DT(ns) = 8.6 × R_DT(kΩ) + 13. Floating DT or tying it to VCCI disables interlock, allowing output overlap determined solely by input timing-UCC21222QDQ1 retains full functionality in all modes.

What protection features does UCC21222QDQ1 include beyond UVLO?

UCC21222QDQ1 includes integrated deglitch filtering (5 ns pulse rejection), fast disable (49 ns response), negative voltage tolerance (–2 V for 200 ns on all pins), and output active pull-down (1.6–2.0 V at 200 mA) to ensure controlled gate discharge during fault conditions. All supplies-VCCI, VDDA, and VDDB-have independent UVLO with hysteresis. These protections collectively meet ASIL-B requirements for automotive power stages without external components.

Can the two outputs of UCC21222QDQ1 be paralleled, and what is required to do so safely?

Yes-the UCC21222QDQ1 supports safe output paralleling due to ≤5 ns propagation delay matching across temperature. To parallel OUTA and OUTB, short the DT pin to VCCI to disable dead time interlock, ensure identical PCB trace lengths and layout symmetry, and drive both inputs (INA and INB) with the same signal. This doubles peak drive strength to 8A source / 12A sink-UCC21222QDQ1's matched timing prevents internal shoot-through, enabling robust operation with heavy gate loads like 1700V SiC modules.