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Texas Instruments UCC21222QDRQ1
- Part No.:
- UCC21222QDRQ1
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
UCC21222QDRQ1.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 16SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:9,190
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Product details
Overview
UCC21222QDRQ1 from Texas Instruments is an AEC-Q100 Grade 1 qualified, 3kVRMS isolated dual-channel gate driver with programmable dead time, 4A peak source / 6A peak sink output drive strength, and >125V/ns CMTI - designed for driving power MOSFETs, IGBTs, and GaN transistors in automotive high-voltage power stages.
For engineers reviewing the UCC21222QDRQ1 datasheet, UCC21222QDRQ1 pinout, UCC21222QDRQ1 application, or UCC21222QDRQ1 equivalent, key selection considerations include its dual-channel isolation architecture, resistor-programmable dead time (13–487 ns), 8V VDD UVLO threshold, –40°C to +150°C junction temperature range, and SOIC-16 D-package layout compatibility with reinforced insulation requirements.
Technical Context
The UCC21222QDRQ1 implements a capacitive isolation barrier between input logic and dual independent output channels, enabling universal configuration as dual low-side, dual high-side, or half-bridge drivers. Its internal deglitch filter rejects transients <5 ns, and negative voltage tolerance (–2V for 200 ns) protects against gate-drive node ringing.
Dead time is set via external resistor on the DT pin (1.7 kΩ–100 kΩ), with linear scaling (DT ≈ 8.6×RDT + 13 ns). Propagation delay matching is ≤5 ns across temperature (–40°C to +150°C), enabling safe paralleling of outputs to double drive strength without shoot-through risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation rating | 3000 VRMS reinforced isolation per UL 1577; VIOWM = 850 VRMS AC / 1200 VDC working voltage |
| Output drive strength | 4A peak source / 6A peak sink - sufficient to rapidly charge/discharge 10-nF gate capacitance with <30 ns rise/fall times |
| Propagation delay | 33 ns typical (26–45 ns max) - enables >2 MHz switching in SiC/GaN-based converters |
| CMTI | >125 V/ns - ensures robust operation in noisy high-dV/dt motor inverter and DC-DC converter environments |
| VDD UVLO threshold | 8.5 V rising / 7.9 V falling (8V option) - prevents erratic gate drive during brown-out conditions |
| Operating temperature | –40°C to +150°C junction - supports under-hood automotive placement without derating |
| Dead time range | Programmable 13–487 ns via external RDT - allows system-level optimization of efficiency vs. shoot-through margin |
Pinout & Package
UCC21222QDRQ1 is housed in a 16-pin SOIC (D package) with 9.9 mm × 3.91 mm body size and reinforced creepage/clearance (>4 mm) for automotive isolation compliance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| INA, INB | Input logic signals | TTL/CMOS-compatible inputs with internal pull-down; enable independent channel control or half-bridge timing |
| DIS | Global disable | Active-high shutdown of both outputs; recommended RC filtering (0–100 Ω + 100–1000 pF) for MCU interface noise immunity |
| DT | Dead time programming | Resistor-to-GND sets inter-channel dead time; floating or tied to VCCI disables interlock for overlapping outputs |
| VCCI | Primary-side supply | 3.0–5.5 V input-side rail; powers logic, UVLO, and isolation transmitter - decoupled locally to GND |
| VDDA, VDDB | Secondary-side supplies | 9.2–25 V per channel; each powers one isolated driver stage with independent 8V UVLO protection |
| OUTA, OUTB | Gate drive outputs | High-current push-pull outputs capable of –2V transient tolerance for 200 ns - compatible with GaN FET gate thresholds |
| VSSA, VSSB | Secondary-side grounds | Independent return paths per channel - essential for maintaining isolation integrity in split-rail configurations |
| GND | Primary-side ground | Reference for all input-side signals; must be separated from secondary grounds by ≥4 mm creepage on PCB |
Key Features
| Feature | Design Value |
|---|---|
| Dual-channel isolation architecture | Capacitive 3kVRMS barrier separates input logic from two independent output stages - eliminates need for separate isolators in half-bridge designs |
| Programmable dead time | Resistor-set dead time (13–487 ns) enables precise tuning to match power device switching characteristics and prevent cross-conduction |
| Output paralleling capability | ≤5 ns propagation delay matching allows safe parallel connection of OUTA/OUTB - doubles drive strength to 8A source / 12A sink for high-Ciss devices |
| Automotive qualification | AEC-Q100 Grade 1 (–40°C to +125°C ambient), HBM ±2000 V / CDM ±1000 V - validated for HEV/EV traction inverters and on-board chargers |
| Robust transient protection | Integrated 5 ns deglitch filter + –2V/200 ns negative voltage tolerance on all pins - suppresses EMI-induced false triggering in noisy power systems |
Applications
| HEV/EV On-Board Charger | Isolated DC-DC Converter |
|---|---|
|
Use Scenario: Bidirectional CLLC resonant converter stage in 11 kW OBC, operating at 300–1000 kHz with SiC MOSFETs. IC Role / Device Role / Timing Role: Dual-channel isolated gate driver controlling high-side/low-side SiC switches with synchronized dead time to minimize conduction loss and prevent shoot-through. Use Value: 33 ns propagation delay and ≤5 ns channel matching ensure precise timing control at high frequency; 125 V/ns CMTI maintains signal integrity amid fast dV/dt switching transitions. |
Use Scenario: 1 kW isolated flyback or forward converter in automotive ADAS domain controller power supply. IC Role / Device Role / Timing Role: Half-bridge configured driver delivering isolated gate signals to primary-side MOSFETs with programmable dead time to optimize transformer utilization and reduce leakage inductance losses. Use Value: Resistor-programmable dead time (13–487 ns) allows fine-tuning for specific transformer parasitics; 8V VDD UVLO prevents erratic switching during input brown-out events. |
| Electric Power Steering Inverter | Traction Inverter Auxiliary Stage |
|
Use Scenario: Three-phase 48 V inverter driving BLDC motor in EPS module, requiring compact, thermally robust gate drive. IC Role / Device Role / Timing Role: Configured as dual high-side driver for phase-leg upper switches, with DIS pin controlled by MCU for fail-safe shutdown during torque fault detection. Use Value: –40°C to +150°C junction rating enables direct mounting near motor controller heatsink; active pull-down (1.6–2.0 V at 200 mA) ensures reliable turn-off even with floating VDD. |
Use Scenario: Auxiliary 12 V DC-DC stage powering gate drivers and sensors in main traction inverter housing. IC Role / Device Role / Timing Role: Dual low-side driver controlling synchronous rectifier MOSFETs in isolated buck converter, leveraging independent VDDA/VSSA and VDDB/VSSB rails for optimal layout separation. Use Value: Independent secondary supplies allow optimized gate drive voltage per channel (e.g., 12 V for SR FETs, 15 V for control FETs); 4A/6A drive strength supports fast switching of large paralleled MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar isolated dual-channel gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC21520QDRQ1 | Higher 4A/6A drive, identical SOIC-16 package, but fixed 50 ns dead time (non-programmable) | Lacks resistor-programmable dead time - less flexible for systems requiring dynamic dead time adjustment or wide input voltage ranges | Select when fixed dead time suffices and simplified BOM is prioritized over tuning flexibility |
| Si8239xISO-KIT | Si82392BD-IS (SOIC-16) offers 4A/4A drive, 5 kVRMS isolation, but no integrated dead time or DIS function | Requires external logic for dead time generation and independent disable circuitry - increases component count and layout complexity | Select when higher isolation rating is mandatory and external dead time control is acceptable |
Compared with UCC21222QDRQ1, UCC21520QDRQ1 trades programmability for identical drive strength and qualification, while Si8239xISO-KIT provides higher isolation voltage at the cost of added external circuitry - making UCC21222QDRQ1 optimal for automotive systems needing tunable dead time, integrated safety features, and SOIC-16 footprint compatibility.
Availability
UCC21222QDRQ1 is available at Aetrix Electronics and suitable for HEV/EV battery chargers, isolated DC-DC power supplies, and motor drives requiring stable component supply, automotive-grade reliability, and reinforced isolation compliance.
Supply support for UCC21222QDRQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with deep expertise in automotive-grade IC design and manufacturing.
The UCC21222QDRQ1 belongs to TI's automotive-qualified isolated gate driver product line, engineered specifically for high-reliability, high-efficiency power conversion in electric vehicle traction systems, on-board chargers, and ADAS power supplies.
FAQ
What is the maximum operating junction temperature for the UCC21222QDRQ1?
The UCC21222QDRQ1 has a specified junction temperature range of –40°C to +150°C. This Grade 1 AEC-Q100 rating enables deployment in under-hood automotive environments without thermal derating. The device incorporates thermal shutdown protection and is characterized for full performance across this range, including propagation delay stability and UVLO threshold consistency.
How is dead time programmed on the UCC21222QDRQ1?
Dead time on the UCC21222QDRQ1 is set by connecting an external resistor (RDT) between the DT pin and GND. For RDT = 10 kΩ, dead time is 86–112 ns; for 50 kΩ, it is 399–487 ns. Floating or tying DT to VCCI disables interlock, allowing output overlap. The relationship is DT (ns) ≈ 8.6 × RDT(kΩ) + 13, verified across temperature.
Does the UCC21222QDRQ1 support paralleling of its two output channels?
Yes, the UCC21222QDRQ1 supports safe paralleling of OUTA and OUTB due to ≤5 ns propagation delay matching across temperature (–40°C to +150°C). When paralleled, total drive strength reaches 8A peak source / 12A peak sink - ideal for driving high-Ciss SiC or GaN devices in high-power density applications.
What isolation standards does the UCC21222QDRQ1 meet?
The UCC21222QDRQ1 meets UL 1577 (3000 VRMS for 60 s), VDE EN IEC 60747-17 (reinforced isolation), and IEC 62368-1 surge requirements (6500 VPK). It achieves VIOWM = 850 VRMS AC / 1200 VDC working voltage, with >4 mm creepage/clearance and CTI >400 V - satisfying automotive functional safety and reinforced insulation mandates.
Can the UCC21222QDRQ1 drive GaN transistors?
Yes, the UCC21222QDRQ1 is explicitly designed for GaN transistors, with 4A/6A drive strength, <30 ns rise/fall times into 10 nF loads, –2V transient tolerance on OUTA/OUTB for 200 ns, and fast disable response (<80 ns). Its 8V VDD UVLO and 125 V/ns CMTI ensure robust operation in high-frequency GaN-based totem-pole PFC and LLC converters.
UCC21222QDRQ1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- IGBT, N-Channel MOSFET
- Voltage - Supply:
- 3V ~ 5.5V
- Logic Voltage - VIL, VIH:
- 1.25V, 1.6V
- Current - Peak Output (Source, Sink):
- 4A, 6A
- Input Type:
- CMOS/TTL
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 5ns, 6ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q100
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 16-SOIC
UCC21222QDRQ1 FAQ
1.How can I place an order for UCC21222QDRQ1 through Aetrix?
Please submit a Request for Quotation (RFQ) for UCC21222QDRQ1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UCC21222QDRQ1 reliable?
The price and inventory of UCC21222QDRQ1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UCC21222QDRQ1 is usually 5 days.
3.What payment methods are accepted for UCC21222QDRQ1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UCC21222QDRQ1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UCC21222QDRQ1?
UCC21222QDRQ1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UCC21222QDRQ1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UCC21222QDRQ1?
For technical support, including UCC21222QDRQ1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UCC21222QDRQ1 requirements.
6.How does Aetrix verify that UCC21222QDRQ1 is sourced from the original manufacturer or authorized distributors?
All UCC21222QDRQ1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UCC21222QDRQ1 meets industry standards.
7.What is the process for return or replacement of UCC21222QDRQ1?
All UCC21222QDRQ1 units undergo pre-shipment inspection (PSI). If there is an issue with UCC21222QDRQ1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UCC21222QDRQ1 part is unused and in its original packaging.
Return procedure for UCC21222QDRQ1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
UCC21222QDRQ1 Tags
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Diodes Incorporated
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1EDN7512BXTSA1
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UCC27517DBVR
Texas Instruments
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Littelfuse Inc.
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Littelfuse Inc.
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2EDN7524RXTMA1
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