Texas Instruments UCC27200ADRCR

Overview

UCC27200ADRCR from Texas Instruments is a high-frequency, dual-channel N-channel MOSFET half-bridge driver with independent high-side and low-side inputs, 120V maximum bootstrap voltage, 3A source/sink output current, and 8V undervoltage lockout (UVLO) on both channels - used in solar microinverters and telecom power supplies to drive synchronous rectifiers and bridge legs.

For engineers reviewing the UCC27200ADRCR datasheet, UCC27200ADRCR pinout, UCC27200ADRCR application, or UCC27200ADRCR equivalent, key selection criteria include its 22ns propagation delay, 1ns delay matching between HO/LO, –18V HS pin tolerance, integrated 0.65Ω bootstrap diode, and operation across –40°C to 150°C junction temperature.

Technical Context

The UCC27200ADRCR implements independent CMOS-input logic with 6V/5.6V HI/LI thresholds and 0.4V hysteresis, enabling compatibility with both microcontroller-level and analog PWM controllers. Its level-shift architecture references the high-side driver to the HS node (not ground), allowing direct control of floating N-MOSFETs in high-voltage half-bridge topologies.

Undervoltage lockout operates separately on VDD (7.1V rising threshold, 0.5V hysteresis) and HB–HS differential (6.7V rising, 0.4V hysteresis), forcing both outputs low during fault conditions. The on-chip bootstrap diode (0.65V VF at 100μA, 0.65Ω RD) eliminates external discrete diodes while supporting up to 120V boot rail swing.

Key Specifications

Pinout & Package

UCC27200ADRCR uses the DRC package: 9-pin VSON (3.0 mm × 3.0 mm) with exposed thermal pad electrically tied to VSS. This compact thermally enhanced layout supports high-power density designs in space-constrained power modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with UCC27200ADRCR, UCC27211DRCR offers identical form-factor and thermal performance but targets lower-voltage logic interfaces, while LM5113SD/NOPB trades integration and drive strength for lower unit cost and legacy SOIC compatibility.

Availability

UCC27200ADRCR is available at Aetrix Electronics and suitable for solar microinverters, telecom power supplies, and online UPS systems requiring stable component supply, extended temperature operation, and high-reliability gate drive performance.

Supply support for UCC27200ADRCR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with decades of expertise in high-reliability power conversion solutions.

The UCC27200A product line delivers high-voltage, high-speed gate drivers optimized for efficiency-critical half-bridge and full-bridge topologies in renewable energy, industrial power, and communications infrastructure.

FAQ

What is the input logic threshold type of UCC27200ADRCR?

The UCC27200ADRCR features CMOS-compatible input thresholds: 6.0 V (typical) high-level input voltage (VHIT) and 5.6 V (typical) low-level input voltage (VLIT), with 0.4 V hysteresis. These thresholds are supply-independent and enable reliable interfacing with both 12 V analog controllers and 3.3 V/5 V digital logic without external level shifters. This behavior is confirmed in Section 5.5 of the official TI datasheet SLUSAF9C.

Does UCC27200ADRCR include an integrated bootstrap diode?

Yes, UCC27200ADRCR integrates a bootstrap diode with 0.65 V forward voltage at 100 μA and 0.65 Ω dynamic resistance. The diode connects internally between VDD (anode) and HB (cathode), eliminating the need for an external discrete diode in most half-bridge designs. This integration reduces component count, PCB area, and parasitic inductance - directly improving reliability and EMI performance in high-frequency converters.

What is the maximum allowable voltage on the HS pin of UCC27200ADRCR?

The HS pin of UCC27200ADRCR supports –1 V to +120 V DC and –18 V to +120 V for repetitive pulses <100 ns. This –18 V negative rating allows the device to survive fast dV/dt-induced negative transients common in hard-switched topologies, such as those caused by stray inductance during low-side turn-on. The specification is verified per Absolute Maximum Ratings Table 5.1 in TI's SLUSAF9C datasheet.

Can UCC27200ADRCR drive SiC or GaN MOSFETs?

Yes, UCC27200ADRCR can drive SiC and GaN MOSFETs due to its 3 A peak source/sink current, 22 ns propagation delay, and 1 ns delay matching - all critical for fast-switching wide-bandgap devices. Its 8–17 V VDD range supports typical gate drive voltages (12–15 V) required for full enhancement, and its –40°C to 150°C rating aligns with wide-bandgap thermal requirements. Layout best practices (short gate loops, proper decoupling) remain essential for optimal performance.

What package does UCC27200ADRCR use and how is thermal performance achieved?

UCC27200ADRCR uses the DRC package: a 9-pin VSON (3.0 mm × 3.0 mm) with an exposed thermal pad electrically connected to VSS. Thermal resistance is rated at RθJB = 22.6 °C/W (junction-to-board), enabling efficient heat transfer to the PCB copper plane. TI recommends soldering the thermal pad to a large copper pour connected to VSS for optimal thermal performance - critical for sustained 3 A output operation at 150°C ambient.