Texas Instruments UCC27200DR

Overview

UCC27200DR from Texas Instruments is a high-frequency, dual-channel N-channel MOSFET gate driver for half-bridge topologies, featuring independent high-side and low-side inputs, 3A source/sink output current, 22ns propagation delay, and integrated 120V-rated bootstrap diode with 0.65Ω dynamic resistance. It operates across –40°C to 150°C and supports solar microinverters and telecom power supplies.

For engineers reviewing the UCC27200DR datasheet, UCC27200DR pinout, UCC27200DR application, or UCC27200DR equivalent, this page delivers verified technical context, real-world timing performance (1ns delay matching), UVLO thresholds (7.1V VDD rising), package-specific thermal metrics (RθJA = 112.5°C/W for SOIC-8), and validated alternative options for high-reliability power stage design.

Technical Context

The UCC27200DR implements independent CMOS-input logic with 6V/5.6V HI/LI thresholds and 0.4V hysteresis, enabling robust noise immunity in noisy power-conversion environments. Its level-shift architecture references HO to HS (switch node), allowing direct control of high-side MOSFETs in floating configurations up to 120V boot voltage.

Undervoltage lockout operates separately on VDD (7.1V rising threshold, 0.5V hysteresis) and VHB–VHS (6.7V rising threshold, 0.4V hysteresis), forcing both outputs low during fault conditions. The on-chip bootstrap diode eliminates external discrete diodes while maintaining fast recovery (<20ns) and low forward drop (0.65V at 100μA).

Key Specifications

Pinout & Package

UCC27200DR is packaged in an 8-pin SOIC (D package), 3.9mm × 4.9mm body size, with exposed pad not present (non-PowerPAD variant). Thermal resistance is RθJA = 112.5°C/W, requiring moderate copper pour for 150°C junction operation at full load.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with UCC27200DR, UCC27211DR offers logic-level compatibility at identical performance and footprint, while IRS2004STRPBF trades timing accuracy and integration for higher voltage margin and lower unit cost - making UCC27200DR optimal for thermally demanding, high-frequency, and noise-immune power stages.

Availability

UCC27200DR is available at Aetrix Electronics and suitable for solar power optimizers, telecom power supplies, and online UPS systems requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for UCC27200DR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management ICs, with decades of expertise in high-reliability power conversion solutions.

The UCC27200DR belongs to TI's UCC2720x family of high-voltage, high-speed gate drivers designed specifically for efficiency-critical, high-temperature, and high-density half-bridge and full-bridge power stages in renewable energy and industrial infrastructure.

FAQ

What is the input voltage threshold type for UCC27200DR?

The UCC27200DR features CMOS-compatible input thresholds: 6.0V (rising) and 5.6V (falling) on both HI and LI pins, with 0.4V hysteresis. This design ensures robust noise immunity in electrically noisy power-conversion environments and supports direct interfacing with 12V analog controllers or level-shifted microcontroller outputs. Unlike the TTL-compatible UCC27201DR, the UCC27200DR does not require external pull-up resistors and maintains consistent thresholds across its full operating temperature range (–40°C to 150°C).

Does UCC27200DR include an integrated bootstrap diode?

Yes, UCC27200DR integrates a high-voltage bootstrap diode with 0.65V forward voltage at 100μA and 0.65Ω dynamic resistance. This eliminates the need for an external discrete diode in the bootstrap circuit, reducing component count, PCB area, and potential failure points. The diode supports up to 120V differential between HB and HS pins and exhibits fast recovery (<20ns), enabling reliable operation in high-frequency (>500kHz) half-bridge converters without compromising efficiency or thermal performance.

What is the maximum allowable voltage on the HS pin of UCC27200DR?

The UCC27200DR supports a maximum DC voltage of 120V on the HS pin relative to VSS, with short-duration (repetitive pulse <100ns) tolerance down to –5V. This –5V negative swing capability allows the device to withstand significant ringing and undershoot during hard-switching transitions without malfunction or latch-up. The absolute maximum rating ensures safe operation in high-dV/dt applications such as SiC-based converters or fast-turnoff IGBT circuits where switch-node transients exceed typical expectations.

How does the undervoltage lockout (UVLO) function in UCC27200DR?

UCC27200DR implements dual independent UVLO circuits: one monitors VDD (7.1V rising threshold, 0.5V hysteresis) and forces both HO and LO low if violated; the other monitors VHB–VHS (6.7V rising threshold, 0.4V hysteresis) and disables only HO. This separation prevents high-side misfiring during bootstrap capacitor discharge while maintaining low-side functionality for diagnostics or soft-start sequencing. Both UVLOs are fully specified over –40°C to 150°C and contribute to system safety in brownout or startup conditions.

What thermal performance can be expected from UCC27200DR in SOIC-8 package?

In its standard SOIC-8 (D) package, UCC27200DR has a junction-to-ambient thermal resistance (RθJA) of 112.5°C/W. Under typical 12V/3A operation with 50% duty cycle and moderate PCB copper (2 oz, 1-in² thermal pad), junction temperature rise remains within safe limits up to ~150°C ambient - validated by TI's thermal characterization data. For extended high-power operation, adding thermal vias under the package or increasing copper area significantly improves dissipation, but the SOIC-8 variant does not include a PowerPAD; the DDA and DRM variants do.