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Texas Instruments UCC27200DRMT

Part No.:
UCC27200DRMT
Manufacturer:
Texas Instruments
Category:
Gate Drivers
Package:
8-VDFN Exposed Pad
Datasheet:
AetrixUCC27200DRMT.pdf
Description:
IC GATE DRVR HALF-BRIDGE 8VSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:490

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Product details

Overview

UCC27200DRMT from Texas Instruments is a high-frequency, dual-channel N-channel MOSFET gate driver for half-bridge topologies, featuring independent high-side and low-side inputs, 3A source/sink output current, 22ns propagation delay, and integrated 120V-rated bootstrap diode with 0.65Ω dynamic resistance. It operates across –40°C to 150°C and supports solar microinverters and telecom power supplies.

For engineers reviewing the UCC27200DRMT datasheet, UCC27200DRMT pinout, UCC27200DRMT application, or UCC27200DRMT equivalent, this page delivers verified technical context, package-specific pin functions, real-world switching performance metrics, thermal behavior under load, and validated alternative options for high-voltage half-bridge gate drive designs.

Technical Context

The UCC27200DRMT implements independent CMOS-input logic with 6V/5.6V thresholds and 0.4V hysteresis, enabling compatibility with both microcontroller-level and analog controller signals. Its level-shift architecture ensures 1ns delay matching between HO and LO outputs while referencing HO to the HS node (–5V to 105V) and LO to VSS.

Undervoltage lockout acts separately on VDD (7.1V rising threshold, 0.5V hysteresis) and HB–HS differential (6.7V rising threshold, 0.4V hysteresis), forcing both outputs low during fault conditions. The on-chip bootstrap diode eliminates external discrete diodes and supports up to 120V boot voltage with fast 20ns turnoff time.

Key Specifications

Parameter Value and Actual Design Meaning
VDD operating range 8–17 V - powers low-side driver and internal logic; decoupling capacitor 0.22–1 μF required at VDD-to-VSS.
HS voltage range –5 V to 105 V DC - enables high-side operation in 100 V-class half-bridges with negative transient tolerance.
Output current ±3 A peak - drives large gate capacitances (e.g., >2 nF) with sub-10 ns rise/fall times into 1000 pF loads.
Propagation delay 22 ns typical - ensures tight timing control in high-frequency converters (>200 kHz) without added latency.
Delay matching ≤1 ns typical - maintains precise dead-time integrity between high-side and low-side switching edges.
UVLO thresholds VDD: 7.1 V ±0.5 V; HB–HS: 6.7 V ±0.4 V - prevents erratic switching during brownout or bootstrap capacitor discharge.
Operating temperature –40°C to +150°C - qualified for under-hood automotive, industrial UPS, and energy storage system environments.

Pinout & Package

UCC27200DRMT uses the DRM (VSON-8) package: 4.0 mm × 4.0 mm body, exposed thermal pad electrically tied to VSS, rated RθJB = 21.3°C/W. Thermal pad must connect to PCB ground plane for reliable 150°C junction operation.

Pin/Terminal Circuit Role Design Meaning
VDD (Pin 1) Low-side supply input Provides power to low-side driver and logic; requires local 0.22–1 μF ceramic decoupling to VSS.
HB (Pin 2) High-side bootstrap supply Connects to positive terminal of bootstrap capacitor; internal diode anode ties to VDD, cathode to HB.
HO (Pin 3) High-side gate output Drives high-side MOSFET gate referenced to HS; capable of ±3 A into capacitive loads.
HS (Pin 4) High-side source reference Connects to source of high-side MOSFET; defines return path for HO and bootstrap capacitor negative terminal.
HI (Pin 5) High-side input CMOS-compatible input (6 V/5.6 V thresholds); controls HO independently of LI for flexible PWM or complementary drive.
LI (Pin 6) Low-side input CMOS-compatible input (6 V/5.6 V thresholds); controls LO independently of HI; pulldown resistance 100–350 kΩ.
VSS (Pin 7) Ground reference Common return for low-side driver, logic, and thermal pad; must be low-inductance connection to PCB ground plane.
LO (Pin 8) Low-side gate output Drives low-side MOSFET gate referenced to VSS; matched to HO within 1 ns for precise timing control.

Key Features

Feature Design Value
Integrated bootstrap diode 0.65 V forward drop at 100 µA, 0.65 Ω dynamic resistance - eliminates external diode, reduces BOM count and layout area.
Independent input control Separate HI and LI pins with CMOS thresholds - enables non-overlapping, phase-shifted, or synchronous rectification drive schemes.
Negative HS voltage tolerance –5 V on HS pin - accommodates shoot-through transients and improves robustness in hard-switching converters.
Matched propagation delays ≤1 ns HO/LO delay mismatch - preserves dead-time accuracy critical for preventing cross-conduction in half-bridge stages.
High-temperature operation Specified from –40°C to +150°C - supports placement near power switches in compact, thermally constrained designs.

Applications

Solar Microinverter Telecom Power Supply

Use Scenario: Half-bridge inverter stage converting DC from PV panel to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-side/low-side gate driver controlling two N-channel MOSFETs; provides precise edge alignment and fast 8 ns/7 ns rise/fall into 1 nF gate loads.

Use Value: Enables >98% efficiency at 200 kHz switching with minimal dead-time loss and no external bootstrap diode.

Use Scenario: Active clamp forward or LLC resonant converter in 48 V input telecom rectifier.

IC Role / Device Role / Timing Role: Isolated half-bridge driver receiving PWM via optocoupler or digital isolator; referenced to floating HS node.

Use Value: Supports 100 V HS swing and withstands –5 V transients during ZVS transitions, reducing EMI filter size.

Online UPS Inverter Battery Test Equipment

Use Scenario: Bidirectional DC–AC inverter in double-conversion UPS delivering clean 230 VAC output.

IC Role / Device Role / Timing Role: Gate driver for high-efficiency SiC MOSFET half-bridge; handles 105 V HS with 120 V max boot rating.

Use Value: Delivers 3 A peak current to charge/discharge SiC gate rapidly, minimizing conduction losses during battery backup mode.

Use Scenario: Programmable load circuit applying controlled charging/discharging pulses to Li-ion cells.

IC Role / Device Role / Timing Role: Fast-switching gate driver for N-channel MOSFET-based active load switch; driven by FPGA PWM.

Use Value: 22 ns propagation delay and 1 ns matching ensure accurate pulse-width fidelity for millisecond-level current profiling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
UCC27211DRMT Same DRM package and pinout; TTL-compatible inputs (2.3 V/1.6 V thresholds) instead of CMOS. Requires 3.3 V logic-level PWM sources; less suitable for 5 V or analog controller interfaces. Select when driving from microcontrollers with 3.3 V GPIO; verify input hysteresis margin against noise in noisy power environments.
LM5109BSDX/NOPB SOIC-8 package; 1 A source/1 A sink; no integrated bootstrap diode; 60 V max HS rating. Limited to ≤60 V half-bridges; requires external bootstrap diode and larger layout area. Choose for cost-sensitive, lower-voltage (<60 V) applications where thermal performance and integration are secondary.

Compared with UCC27200DRMT, UCC27211DRMT offers identical packaging and performance but targets 3.3 V logic systems, whereas LM5109BSDX/NOPB trades integration and voltage rating for lower cost and wider distributor availability in legacy SOIC footprints.

Availability

UCC27200DRMT is available at Aetrix Electronics and suitable for solar microinverters, telecom power supplies, and online UPS systems requiring stable component supply, long-term lifecycle support, and guaranteed traceability.

Supply support for UCC27200DRMT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company specializing in analog, embedded processing, and power management ICs, with over 50 years of leadership in high-reliability power conversion solutions.

The UCC27200DRMT belongs to TI's UCC2720x family of high-voltage half-bridge drivers, designed specifically for efficient, compact, and thermally robust gate drive in 100 V-class isolated and non-isolated DC–DC and DC–AC converters.

FAQ

What is the maximum allowable voltage on the HS pin of the UCC27200DRMT?

The UCC27200DRMT supports a maximum DC voltage of 105 V on the HS pin, with transient tolerance up to –5 V for <100 ns pulses. This rating enables use in 100 V nominal bus applications such as solar microinverters and telecom rectifiers. Exceeding 105 V DC risks permanent damage per Absolute Maximum Ratings. Always verify HS voltage swing-including ringing-against this limit in final layout.

Does the UCC27200DRMT require an external bootstrap diode?

No, the UCC27200DRMT integrates a bootstrap diode with 0.65 V forward voltage at 100 µA and 0.65 Ω dynamic resistance. This eliminates the need for an external diode, reducing component count and PCB area. However, an external bootstrap capacitor (0.022–0.1 µF) remains mandatory between HB and HS pins to sustain high-side bias during continuous conduction.

How does the UCC27200DRMT handle undervoltage conditions on the high-side supply?

The UCC27200DRMT monitors the VHB–HS differential voltage and triggers high-side UVLO if it falls below 6.7 V (rising threshold) with 0.4 V hysteresis. When activated, the HO output is forced low to prevent partial turn-on of the high-side MOSFET. This protects against shoot-through during bootstrap capacitor discharge or startup undershoot, ensuring safe operation in hard-switching topologies.

What is the thermal pad connection requirement for the UCC27200DRMT in the DRM package?

The exposed thermal pad of the UCC27200DRMT (DRM package) is electrically connected to VSS and must be soldered to a large copper pour or internal ground plane. TI specifies RθJB = 21.3°C/W only when the pad is properly connected; omitting this connection degrades thermal performance by >100°C/W and risks thermal shutdown above 100°C ambient. Use ≥4 thermal vias under the pad.

Can the UCC27200DRMT drive SiC or GaN MOSFETs?

Yes, the UCC27200DRMT is suitable for driving SiC and GaN MOSFETs due to its 3 A peak source/sink capability, 8 ns/7 ns rise/fall times into 1000 pF, and –5 V to 105 V HS rating. Its fast propagation delay (22 ns) and 1 ns delay matching help minimize switching losses in wide-bandgap devices. Ensure gate resistor selection balances EMI and dV/dt stress per device datasheet recommendations.

UCC27200DRMT Specifications

Product attributes
Attribute value
Manufacturer:
Texas Instruments
Series:
-
Package/Case:
8-VDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Driven Configuration:
Half-Bridge
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
N-Channel MOSFET
Voltage - Supply:
8V ~ 17V
Logic Voltage - VIL, VIH:
3V, 8V
Current - Peak Output (Source, Sink):
3A, 3A
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
120 V
Rise / Fall Time (Typ):
8ns, 7ns
Operating Temperature:
-40°C ~ 140°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-VSON (4x4)

UCC27200DRMT FAQ

1.How can I place an order for UCC27200DRMT through Aetrix?

Please submit a Request for Quotation (RFQ) for UCC27200DRMT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for UCC27200DRMT reliable?

The price and inventory of UCC27200DRMT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UCC27200DRMT is usually 5 days.

3.What payment methods are accepted for UCC27200DRMT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UCC27200DRMT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for UCC27200DRMT?

UCC27200DRMT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your UCC27200DRMT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for UCC27200DRMT?

For technical support, including UCC27200DRMT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UCC27200DRMT requirements.

6.How does Aetrix verify that UCC27200DRMT is sourced from the original manufacturer or authorized distributors?

All UCC27200DRMT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UCC27200DRMT meets industry standards.

7.What is the process for return or replacement of UCC27200DRMT?

All UCC27200DRMT units undergo pre-shipment inspection (PSI). If there is an issue with UCC27200DRMT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The UCC27200DRMT part is unused and in its original packaging.

Return procedure for UCC27200DRMT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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