Texas Instruments UCC27201ADRCT

Overview

UCC27201ADRCT from Texas Instruments is a 120V, 3A/3A high-side/low-side gate driver IC for N-channel MOSFET half-bridge topologies, featuring independent TTL-compatible inputs, integrated 0.65V/0.65Ω bootstrap diode, 8ns rise/7ns fall time (1000pF), and dual 8V UVLO with 1ns delay matching - deployed in solar microinverters and telecom power supplies.

For engineers reviewing the UCC27201ADRCT datasheet, UCC27201ADRCT pinout, UCC27201ADRCT application, or UCC27201ADRCT equivalent, this page delivers verified electrical specs, thermal metrics, SOIC-8 package layout, real-world timing behavior under 150°C operation, and validated alternatives for high-voltage isolated DC-DC and bridge-converter designs.

Technical Context

The UCC27201ADRCT implements independent CMOS-level-shifted control paths for HO and LO outputs, with level-shifting referenced to HS (switch node) for high-side drive and VSS (ground) for low-side drive. Its internal bootstrap diode enables self-biased high-side operation up to 120V HB–HS differential voltage, while negative HS tolerance of –18V supports robust noise immunity in fast-switching converters.

UVLO is implemented separately on VDD (7.1V rising threshold, 0.5V hysteresis) and VHB–VHS (6.7V rising threshold, 0.4V hysteresis), forcing both outputs low during undervoltage conditions. Input thresholds are TTL-compatible: 1.9–2.7V high, 1.3–1.9V low, with 0.7V hysteresis - enabling direct interface with 3.3V/5V controllers without external level translation.

Key Specifications

Pinout & Package

UCC27201ADRCT is packaged in an 8-pin SOIC (D package), 4.9 mm × 3.9 mm body, with exposed thermal pad electrically isolated from leads but thermally coupled to substrate (GND reference). Pinout optimized for minimal loop area in high-di/dt gate-drive paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-side/low-side gate driver applications.

Compared with UCC27201ADRCT, UCC27211DRCR offers identical drive performance in a smaller package but requires CMOS-level inputs, while IRS2004PBF extends voltage range at the cost of timing accuracy and added BOM complexity - making UCC27201ADRCT optimal for compact, high-efficiency 100 V-class converters with TTL/3.3 V control.

Availability

UCC27201ADRCT is available at Aetrix Electronics and suitable for solar microinverters, telecom AC-DC front-ends, and online UPS inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial production.

Supply support for UCC27201ADRCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with decades of expertise in high-reliability power conversion ICs.

The UCC2720xA family was designed specifically for high-frequency, high-voltage half-bridge and full-bridge gate driving in renewable energy, telecom, and industrial power systems - emphasizing integration, thermal robustness, and noise immunity.

FAQ

What is the maximum allowable voltage on the HS pin of the UCC27201ADRCT?

The UCC27201ADRCT supports a maximum DC voltage of 120 V on the HS pin relative to VSS, and tolerates repetitive –18 V pulses (duration <100 ns). This specification enables safe operation in 100 V-class half-bridge circuits with significant ringing, such as those found in solar microinverters and telecom power supplies. The device's enhanced ESD structure and level-shift architecture maintain functionality under these transient conditions without latch-up or damage.

Does the UCC27201ADRCT include an integrated bootstrap diode, and what are its key electrical characteristics?

Yes, the UCC27201ADRCT integrates a bootstrap diode with 0.65 V forward voltage at 100 µA and 0.65 Ω dynamic resistance at 120 mA. This eliminates the need for an external diode, reducing component count and PCB area. The diode is rated for 120 V reverse voltage and exhibits 20 ns turnoff time, supporting efficient high-frequency (>500 kHz) operation in bootstrap-based high-side gate drive circuits.

What are the input voltage thresholds for the HI and LI pins of the UCC27201ADRCT?

The UCC27201ADRCT features TTL-compatible inputs: HI and LI have a rising threshold of 1.9–2.7 V and falling threshold of 1.3–1.9 V, with 0.7 V hysteresis. These thresholds allow direct interfacing with 3.3 V and 5 V logic families without external level shifters or pull-up resistors - unlike the CMOS-input UCC27200A variant, which requires ~6 V thresholds.

How does the UCC27201ADRCT handle undervoltage lockout (UVLO), and are the thresholds independent?

The UCC27201ADRCT implements two independent UVLO circuits: one monitors VDD (7.1 V rising threshold, 0.5 V hysteresis), disabling both drivers if violated; the other monitors VHB–VHS differential (6.7 V rising threshold, 0.4 V hysteresis), disabling only the high-side driver. This dual protection prevents partial drive during bootstrap capacitor discharge or main supply sag - a critical safeguard in high-reliability power systems.

What package type and thermal characteristics apply to the UCC27201ADRCT?

The UCC27201ADRCT uses the SOIC-8 (D) package, 4.9 mm × 3.9 mm, with junction-to-ambient thermal resistance (RθJA) of 112.5°C/W. It lacks an exposed thermal pad - unlike DDA, DRM, DRC, or DPR variants - so thermal design must rely on copper pour and via stitching to inner ground planes. For high-power or high-temperature applications, consider the DDA (PowerPAD™ SOIC) variant instead.