Texas Instruments UCC27201AQDMKRQ1

Overview

UCC27201AQDMKRQ1 from Texas Instruments is an AEC-Q100 Grade 1 automotive half-bridge gate driver for N-channel MOSFETs, featuring independent HI/LI inputs, 120V max boot voltage, 3A source/sink output current, and 8V undervoltage lockout on both high-side and low-side drivers. It enables high-frequency switching in traction inverters and on-board chargers.

For engineers reviewing the UCC27201AQDMKRQ1 datasheet, UCC27201AQDMKRQ1 pinout, UCC27201AQDMKRQ1 application, or UCC27201AQDMKRQ1 equivalent, key selection criteria include HS negative voltage tolerance (–18V), 1ns delay matching, integrated bootstrap diode (0.65V VF, 0.65Ω RD), SOIC-8 PowerPad™ package thermal performance, and TTL-compatible input thresholds with 0.7V hysteresis.

Technical Context

The UCC27201AQDMKRQ1 implements a level-shift architecture to reference the high-side driver to the HS node, enabling robust operation up to 120V boot voltage while maintaining precise 1ns delay matching between HO and LO edges. Its dual UVLO circuitry independently monitors VDD (7.1V rising threshold, 0.5V hysteresis) and VHB–VHS differential (6.7V rising threshold, 0.4V hysteresis).

It integrates a monolithic bootstrap diode with 0.65V forward voltage at 100μA and 0.85V at 100mA, eliminating external diodes while supporting fast recovery (20ns turnoff). The 8-pin SOIC PowerPad™ package delivers RθJC(bot) = 8.4°C/W for high-power-density automotive motor control layouts.

Key Specifications

Pinout & Package

UCC27201AQDMKRQ1 uses an 8-pin PowerPad™ SOIC-8 (DDA) package measuring 4.9mm × 3.9mm with an exposed thermal pad electrically tied to VSS. The pad must be soldered to a large GND plane to achieve RθJB = 20°C/W and RθJC(bot) = 8.4°C/W.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar half-bridge gate driver applications.

Compared with UCC27211AQDRQ1 and LM5113QDGSRQ1, the UCC27201AQDMKRQ1 uniquely combines integrated bootstrap diode, –18V HS tolerance, and 1ns delay matching in a single AEC-Q100 Grade 1 package-making it optimal for space-constrained, noise-immune automotive traction and charging systems where reliability and BOM reduction are critical.

Availability

UCC27201AQDMKRQ1 is available at Aetrix Electronics and suitable for automotive on-board chargers, electric power steering systems, and 2-/3-wheeler traction inverters requiring stable component supply across extended temperature and high-reliability production cycles.

Supply support for UCC27201AQDMKRQ1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Texas Instruments is a global semiconductor company delivering analog and embedded processing solutions for automotive, industrial, personal electronics, and communications markets.

The UCC27201AQDMKRQ1 belongs to TI's automotive-grade gate driver product line, engineered specifically for high-voltage, high-reliability motor control and power conversion in electric vehicles and ADAS subsystems.

FAQ

What is the maximum allowable voltage on the HS pin of the UCC27201AQDMKRQ1?

The UCC27201AQDMKRQ1 specifies an absolute maximum HS pin voltage of –18V for repetitive pulses <100ns and +120V DC. This –18V rating enables robust operation in high-dV/dt environments such as traction inverters, where ringing on the switch node could otherwise cause false triggering or latch-up. The device maintains functional operation within recommended conditions of –1V to +105V on HS at TJ = –40°C to +150°C.

Does the UCC27201AQDMKRQ1 require an external bootstrap diode?

No, the UCC27201AQDMKRQ1 integrates a monolithic bootstrap diode with 0.65V forward voltage at 100μA and 0.65Ω dynamic resistance. This eliminates the need for an external diode, reducing BOM count and PCB area. An external bootstrap capacitor (0.022–0.1μF) is still required between HB and HS pins to sustain high-side gate drive during continuous conduction.

What is the purpose of the 1ns delay matching specification in the UCC27201AQDMKRQ1?

Delay matching of 1ns typical in the UCC27201AQDMKRQ1 ensures near-identical propagation delays between HI→HO and LI→LO paths. This minimizes timing skew during complementary switching, preventing shoot-through current in half-bridge configurations. At 100kHz switching, 1ns skew corresponds to just 0.01% duty-cycle error-critical for efficiency and MOSFET safety in automotive traction drives.

How does the UVLO protection work on the UCC27201AQDMKRQ1?

The UCC27201AQDMKRQ1 implements dual independent UVLO circuits: one monitors VDD (7.1V rising threshold, 0.5V hysteresis) and forces both outputs low if violated; the other monitors VHB–VHS differential (6.7V rising threshold, 0.4V hysteresis) and disables only the high-side driver. This ensures safe shutdown during battery sag or bootstrap capacitor discharge while preserving low-side control for diagnostics.

What thermal performance can be expected from the UCC27201AQDMKRQ1 in SOIC-8 PowerPad™ package?

With its exposed thermal pad soldered to a 1-in² copper area on the PCB, the UCC27201AQDMKRQ1 achieves RθJB = 20°C/W and RθJC(bot) = 8.4°C/W. At 3A output current and 12V VDD, typical power dissipation is ~0.4W; this yields a junction-to-board temperature rise of ~8°C-enabling full-rated operation at +125°C ambient without forced air or heatsink in automotive under-hood applications.