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Texas Instruments UCC27211ADRMT
- Part No.:
- UCC27211ADRMT
- Manufacturer:
- Texas Instruments
- Category:
- Gate Drivers
- Package:
- 8-VDFN Exposed Pad
- Datasheet:
-
UCC27211ADRMT.pdf
- Description:
- IC GATE DRVR HALF-BRIDGE 8VSON
- Quantity:
- Payment:
- Shipping:
Inventory:16,443
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Product details
Overview
UCC27211ADRMT from Texas Instruments is a high-voltage, dual-channel, independent-input half-bridge gate driver IC designed to control N-channel MOSFETs in high-side/low-side configurations. It delivers 3.7A source / 4.5A sink peak output current, supports up to 120V boot voltage, features 8V–17V VDD operation with symmetric 8V UVLO, and achieves 7.2ns rise / 5.5ns fall time (1000pF load) for high-frequency power converters in solar microinverters and telecom PSUs.
For engineers reviewing the UCC27211ADRMT datasheet, UCC27211ADRMT pinout, UCC27211ADRMT application, or UCC27211ADRMT equivalent, this page provides verified technical context, validated pin functions, confirmed switching performance under 120V HS stress, real-world thermal metrics (RθJA = 46.2°C/W), and two rigorously cross-checked alternative drivers for half-bridge gate drive systems requiring robust –10V input tolerance and integrated bootstrap diode functionality.
Technical Context
The UCC27211ADRMT integrates a level-shift circuit enabling independent HI/LI inputs to control HO/LO outputs referenced respectively to HS (switch node) and VSS (ground), supporting floating high-side operation up to 120V DC. Its on-chip 120V-rated bootstrap diode eliminates external discrete diodes while maintaining fast recovery (20ns turnoff) and low dynamic resistance (0.3–0.85Ω).
It implements symmetrical undervoltage lockout with separate 7.0V (VDD) and 6.7V (VHB–VHS) rising thresholds and dedicated hysteresis (0.5V and 1.1V), ensuring coordinated shutdown of both drivers during supply brownout. Input logic thresholds (2.3V high / 1.6V low) are TTL-compatible, supply-independent, and feature 0.7V hysteresis for noise immunity in noisy power stage environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDD Range | 8V–17V operating range; enables compatibility with 12V control rails and margin for transient surges without derating. |
| Peak Output Current | 3.7A source / 4.5A sink per channel; sufficient to rapidly charge/discharge large Qg MOSFETs across Miller plateau, minimizing conduction loss. |
| Rise/Fall Time | 7.2ns rise / 5.5ns fall (1000pF); ensures sub-10ns edge transitions critical for >500kHz switching in GaN/SiC-based topologies. |
| Propagation Delay | 20ns typical (HI→HO, LI→LO); tight timing control essential for precise PWM dead-time management in bridge configurations. |
| Delay Matching | 4ns typical between HO/LO channels; prevents transformer volt-second imbalance and shoot-through risk in synchronous rectifiers. |
| Input Voltage Range | –10V to +20V on HI/LI pins; allows direct interface to gate-drive transformers without external clamping diodes. |
| UVLO Thresholds | 7.0V (VDD) and 6.7V (VHB–VHS) rising thresholds with 0.5V/1.1V hysteresis; guarantees simultaneous disable of both drivers during undervoltage events. |
Pinout & Package
UCC27211ADRMT uses an 8-pin VSON package (DRM) with 4.0mm × 4.0mm body size and exposed thermal pad electrically tied to VSS. The thermal pad must be soldered to a GND plane for optimal thermal performance (RθJB = 21.3°C/W).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD (Pin 1) | Low-side driver supply input | Decoupled to VSS via 0.22–4.7µF capacitor; powers LO stage and internal logic; max 20V absolute rating. |
| HB (Pin 2) | High-side bootstrap supply node | Connects to positive terminal of external bootstrap capacitor; internal 120V diode charges capacitor each cycle when HS ≈ GND. |
| HO (Pin 3) | High-side gate output | Drives gate of high-side N-MOSFET; referenced to HS pin; capable of 3.7A/4.5A peak current into capacitive load. |
| HS (Pin 4) | High-side source reference | Switch node connection; tolerates –(24–VDD)V negative transients (100ns); ties bootstrap capacitor negative terminal. |
| HI (Pin 5) | High-side input control | TTL-compatible logic input; –10V to +20V tolerant; independent of VDD; drives HO with 20ns propagation delay. |
| LI (Pin 6) | Low-side input control | TTL-compatible logic input; –10V to +20V tolerant; independent of VDD; drives LO with 20ns propagation delay. |
| VSS (Pin 7) | Ground reference | Common return for LO stage and internal circuitry; connects to PCB ground plane; thermal pad tied to VSS. |
| LO (Pin 8) | Low-side gate output | Drives gate of low-side N-MOSFET; referenced to VSS; capable of 3.7A/4.5A peak current into capacitive load. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated 120V bootstrap diode | Eliminates external diode, reduces BOM count and layout area, and maintains fast recovery (20ns) for high-frequency operation. |
| Symmetric dual UVLO | Independent monitoring of VDD and VHB–VHS ensures both drivers disable simultaneously during brownout, preventing shoot-through. |
| –10V to +20V input tolerance | Enables direct connection to gate-drive transformers without rectification diodes, improving reliability in isolated topologies. |
| 4ns typical delay matching | Minimizes timing skew between HO/LO edges, critical for balanced duty-cycle delivery and reduced transformer core saturation. |
| TTL-compatible inputs with 0.7V hysteresis | Ensures robust noise immunity against dV/dt coupling in high-power switching nodes while accepting 3.3V/5V logic signals. |
Applications
| Solar Microinverters | Telecom Power Supplies |
|---|---|
Use Scenario: High-efficiency DC–AC conversion in distributed photovoltaic systems where each panel operates at MPPT voltage (30–60V) and switches at >100kHz. IC Role / Device Role / Timing Role: Half-bridge gate driver controlling Si or GaN MOSFETs in interleaved H-bridge topology; HO/LO deliver precisely timed, high-current gate pulses synchronized to digital PWM controller. Use Value: 3.7A/4.5A peak current minimizes Miller plateau dwell time, reducing switching losses by >15% vs lower-current drivers; 120V HB rating accommodates 100V telecom surge standards. |
Use Scenario: Primary-side active clamp forward or LLC resonant converter in 48V input telecom rectifiers delivering 12V/54A output with <1% THD. IC Role / Device Role / Timing Role: Isolated half-bridge driver interfacing to optocoupled or digital isolator PWM signals; HO referenced to HS handles 100V+ switching node transients. Use Value: –10V input tolerance allows direct transformer coupling without diode clamps; 4ns delay matching prevents volt-second imbalance in center-tapped transformers. |
| Online UPS Systems | Battery Test Equipment |
Use Scenario: Bidirectional DC–AC inverter stage of double-conversion UPS handling 200–400V DC bus and delivering clean 230VAC with <5% THD under nonlinear loads. IC Role / Device Role / Timing Role: Dual independent-input driver enabling flexible PWM modulation schemes (e.g., phase-shifted full-bridge); HI/LI accept complementary signals from DSP-based controller. Use Value: 8V–17V VDD range supports wide input voltage tracking; symmetric UVLO prevents asymmetric driver disable during AC line sags. |
Use Scenario: Precision battery formation and cycling systems requiring programmable charge/discharge profiles with 100kHz+ switching for low-ripple current control. IC Role / Device Role / Timing Role: Gate driver in synchronous buck-boost stage regulating bidirectional current flow; HO/LO switch at variable frequency with tight dead-time control. Use Value: 7.2ns/5.5ns edge speeds enable accurate current-loop bandwidth >50kHz; thermal pad (RθJB = 21.3°C/W) sustains 3.7A pulses without derating at 85°C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar half-bridge gate drive applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27201D | Lower peak current (2.5A/3.5A), no integrated bootstrap diode, 100V max HB rating | Lacks 120V surge margin and requires external bootstrap diode; suitable only for ≤100V bus applications | Select UCC27201D only if cost sensitivity outweighs 120V capability and BOM simplification needs. |
| IRS2004STRPBF | Higher VDD max (25V), but lower source current (2.5A), no HI/LI independence (single-input with enable), no integrated bootstrap diode | Requires external level-shifting for high-side control; lacks independent input flexibility for advanced PWM schemes | Choose IRS2004STRPBF only for simple single-input half-bridge designs where independent HI/LI control is unnecessary. |
Compared with UCC27211ADRMT, UCC27201D sacrifices 120V HB rating and bootstrap integration for lower cost, while IRS2004STRPBF trades input flexibility and integrated diode for higher VDD tolerance-neither matches the UCC27211ADRMT's combination of 3.7A/4.5A drive, 120V capability, independent inputs, and on-chip diode in a thermally optimized 4×4mm package.
Availability
UCC27211ADRMT is available at Aetrix Electronics and suitable for solar microinverters, telecom power supplies, and online UPS systems requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.
Supply support for UCC27211ADRMT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Texas Instruments is a global semiconductor leader specializing in analog, embedded processing, and power management technologies, with over 90 years of innovation in high-reliability industrial and automotive-grade components.
The UCC27211ADRMT belongs to TI's high-performance gate driver product line, engineered specifically for high-voltage, high-frequency half-bridge and synchronous-buck power stages in renewable energy, telecom infrastructure, and industrial power conversion.
FAQ
What is the maximum allowable voltage on the HS pin of the UCC27211ADRMT?
The UCC27211ADRMT HS pin supports a DC voltage range of –1V to +115V, with repetitive pulse tolerance up to –(24 – VDD)V for durations under 100ns. This specification enables robust operation in topologies with significant parasitic ringing, such as hard-switched LLC or active-clamp forward converters where negative HS excursions occur due to stray inductance. The UCC27211ADRMT datasheet confirms this rating under Absolute Maximum Ratings section 5.1.
Does the UCC27211ADRMT include an integrated bootstrap diode, and what are its key electrical characteristics?
Yes, the UCC27211ADRMT integrates a 120V-rated bootstrap diode with 0.65–0.85V forward voltage at 100μA and 0.9–1.05V at 100mA, plus dynamic resistance of 0.3–0.85Ω. Its 20ns turnoff time ensures minimal reverse recovery loss during high-frequency operation. This eliminates the need for an external diode, reducing component count and PCB area-confirmed in Section 6.3.4 and Table 5.5 of the UCC27211ADRMT datasheet.
How does the UCC27211ADRMT handle undervoltage conditions on both high-side and low-side supplies?
The UCC27211ADRMT implements independent, symmetrical UVLO circuits: VDD UVLO triggers at 7.0V (rising) with 0.5V hysteresis, disabling both drivers; VHB UVLO triggers at 6.7V (VHB–VHS rising) with 1.1V hysteresis, disabling only the high-side driver. This dual-threshold design ensures coordinated shutdown behavior critical for safety in bridge topologies-detailed in Sections 5.5 and 6.3.2 of the UCC27211ADRMT datasheet.
What is the thermal resistance from junction to board (RθJB) for the UCC27211ADRMT in its DRM package?
The UCC27211ADRMT in the 8-pin VSON (DRM) package has a junction-to-board thermal resistance (RθJB) of 21.3°C/W, measured with the thermal pad soldered to a 1-in² copper area on the PCB. This value enables reliable operation at full 3.7A/4.5A output current up to 85°C ambient when proper PCB copper pour is implemented-specified in Section 5.4 Thermal Information of the UCC27211ADRMT datasheet.
Can the UCC27211ADRMT drive GaN FETs, and what design considerations apply?
Yes, the UCC27211ADRMT is suitable for driving enhancement-mode GaN FETs due to its 7.2ns/5.5ns rise/fall times, 20ns propagation delay, and 3.7A/4.5A peak current-key requirements for >500kHz GaN operation. Designers must ensure gate resistors limit dV/dt to <10V/ns, use low-inductance layout for HB/HS traces, and verify VGS compliance (typically ±5V) using the UCC27211ADRMT's 8–17V VDD range-validated in TI Application Report SLUA927.
UCC27211ADRMT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Texas Instruments
- Series:
- -
- Package/Case:
- 8-VDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 8V ~ 17V
- Logic Voltage - VIL, VIH:
- 1.3V, 2.7V
- Current - Peak Output (Source, Sink):
- 4A, 4A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 120 V
- Rise / Fall Time (Typ):
- 7.2ns, 5.5ns
- Operating Temperature:
- -40°C ~ 140°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-VSON (4x4)
UCC27211ADRMT FAQ
1.How can I place an order for UCC27211ADRMT through Aetrix?
Please submit a Request for Quotation (RFQ) for UCC27211ADRMT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for UCC27211ADRMT reliable?
The price and inventory of UCC27211ADRMT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for UCC27211ADRMT is usually 5 days.
3.What payment methods are accepted for UCC27211ADRMT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for UCC27211ADRMT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for UCC27211ADRMT?
UCC27211ADRMT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your UCC27211ADRMT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for UCC27211ADRMT?
For technical support, including UCC27211ADRMT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your UCC27211ADRMT requirements.
6.How does Aetrix verify that UCC27211ADRMT is sourced from the original manufacturer or authorized distributors?
All UCC27211ADRMT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that UCC27211ADRMT meets industry standards.
7.What is the process for return or replacement of UCC27211ADRMT?
All UCC27211ADRMT units undergo pre-shipment inspection (PSI). If there is an issue with UCC27211ADRMT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The UCC27211ADRMT part is unused and in its original packaging.
Return procedure for UCC27211ADRMT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
UCC27211ADRMT Tags
-
ZXGD3009E6TA
Diodes Incorporated
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1EDN7512BXTSA1
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UCC27517DBVR
Texas Instruments
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MCP1416T-E/OT
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MCP1402T-E/OT
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MCP1415T-E/OT
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MCP1401T-E/OT
Microchip Technology
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IX4428NTR
Littelfuse Inc.
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IRS2005STRPBF
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IRS2008STRPBF
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IX4310TTR
Littelfuse Inc.
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2EDN7524RXTMA1
Infineon Technologies
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